Patent application number | Description | Published |
20090045486 | Method of manufacturing nitride semiconductor device - A method of manufacturing a nitride semiconductor device includes the steps of: forming a mask of a pattern selectively covering a cutting line on a first major surface of a substrate; forming group III nitride semiconductor layers exposing the mask provided on the cutting line by selectively growing a group III nitride semiconductor from exposed portions of the first major surface of the substrate; forming a division guide groove on the substrate along the cutting line; and dividing the substrate along the division guide groove. The step of forming the division guide groove may be a step of forming the division guide groove by laser processing. | 02-19-2009 |
20090046754 | Nitride semiconductor device and method of manufacturing the same - A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semiconductor layer grown on a major surface thereof; removing deposits from the surface of the substrate by applying a laser beam having the wavelength to the surface of the substrate at energy density causing substantially no multiphoton absorption on the substrate; and dividing the substrate along the division guide groove. | 02-19-2009 |
20090101927 | Method of manufacturing light emitting device - A method of manufacturing a semiconductor light emitting device employs a substrate formed by successively stacking an n-type semiconductor layered portion including an AlGaN layer, a light emitting layer containing In and a p-type semiconductor layered portion on a group III nitride semiconductor substrate having a larger lattice constant than AlGaN. This method includes the steps of selectively etching the substrate from the side of the p-type semiconductor layered portion along a cutting line to expose the AlGaN layer along the cutting line, forming a division guide groove along the cutting line on the exposed AlGaN layer, and dividing the substrate along the division guide groove. | 04-23-2009 |
20090141765 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer. | 06-04-2009 |
20090148975 | Method of manufacturing nitride semiconductor device - A method of manufacturing a nitride semiconductor device includes: a working region forming step of forming a working region in a group III nitride semiconductor substrate by converging a laser beam having a wavelength of 500 nm to 700 nm in the group III nitride semiconductor substrate and by scanning a convergent point of the laser beam in a prescribed scanning direction in the interior of the group III nitride semiconductor substrate; and a dividing step of dividing the group III nitride semiconductor substrate by generating a crack from the working region without processing a surface of the group III nitride semiconductor substrate. | 06-11-2009 |
20090175305 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. | 07-09-2009 |
20090230514 | Method of manufacturing nitride semiconductor device - A method of manufacturing a nitride semiconductor device includes the steps of: growing a group III nitride semiconductor layer on a substrate; forming a processed region in the substrate with a laser beam; and reducing the thickness of the substrate thereby spontaneously dividing the substrate from the processed region by the internal stress of the substrate. The substrate may be a sapphire substrate or an SiC substrate. | 09-17-2009 |
20100008391 | Nitride based semiconductor device and fabrication method for the same - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 01-14-2010 |
20110085579 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. | 04-14-2011 |
20110096805 | NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device. | 04-28-2011 |
20110248241 | NITRIDE SEMICONDUCTOR ELEMENT - A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer layer, and a superlattice layer formed on and in contact with the second spacer layer. The first spacer layer is larger in lattice constant than the second spacer layer. The superlattice layer has first layers and second layers smaller in lattice constant than the first layers stacked alternately on top of one another. The average lattice constant of the superlattice layer is smaller than the lattice constant of the first spacer layer and larger than the lattice constant of the second spacer layer. | 10-13-2011 |
20120140785 | NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 06-07-2012 |
20120299060 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device includes: a silicon substrate; a buffer layer formed on the silicon substrate and comprised of a nitride semiconductor; and an active layer formed on the buffer layer and comprised of a nitride semiconductor. The buffer layer includes a first layer formed in contact with the silicon substrate, and a second layer formed in contact with the first layer and the active layer. The carbon concentration at an interface between the first layer and the second layer is in the range of 1×10 | 11-29-2012 |
20130240901 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a substrate, and a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, and a fourth nitride semiconductor layer sequentially formed on the substrate. A channel is formed in the third nitride semiconductor layer, and includes carriers accumulated near an interface between the third nitride semiconductor layer and the fourth nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger than that of the third nitride semiconductor layer. The first nitride semiconductor layer has a band gap equal to or larger than that of the second nitride semiconductor layer, and has a carbon concentration higher than that of the second nitride semiconductor layer. | 09-19-2013 |