Shinohara, Chiba
Hironao Shinohara, Chiba JP
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20090045434 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates. | 02-19-2009 |
20090078951 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. | 03-26-2009 |
20090152585 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material. | 06-18-2009 |
Koji Shinohara, Chiba JP
Patent application number | Description | Published |
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20090209771 | METHOD FOR PRODUCING PROPYLENE OXIDE - A method for continuously producing propylene oxide, which comprises supplying an organic peroxide and propylene to an epoxidation reactor in which a solid catalyst for epoxidation is packed, thereby subjecting them to an epoxidation reaction, the method having a propylene pre-treatment step described below: | 08-20-2009 |
20100145081 | PROCESS FOR PRODUCING PROPYLENE OXIDE - A process for producing propylene oxide, which comprises supplying an organic peroxide and propylene to an epoxidation reactor in which a solid catalyst is packed thereby continuously producing propylene oxide through epoxidation reaction, wherein said process comprises cooling at least a part of the propylene before supplying to separate and remove water contained in the propylene, and supplying the propylene in which water has been separated and removed to the epoxidation reactor. | 06-10-2010 |
Yasuhiro Shinohara, Chiba JP
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20090025835 | High Strength Steel Plate and High Strength Welded Pipe Excellent in Ductile Fracture Characteristic and Methods of Production of Same - The present invention provides high strength steel plate and high strength welded pipe excellent in ductile fracture characteristic and methods of production of the same, that is, high strength steel plate excellent in ductile fracture characteristic, and high strength welded pipe using that steel plate as a base material, having a tensile strength corresponding to the X100 class of the API standard, containing, by mass %, C: 0.01 to 0.5%, Si: 0.01 to 3%, Mn: 0.1 to 5%, P: 0.03% or less, and S: 0.03% or less and a balance of Fe and unavoidable impurities, having a microstructure comprised of, by area ratio, 1 to 60% of ferrite and the balance of bainite and martensite, having a maximum value of the {100} accumulation degree of the cross-section rotated 20 to 50° from the plate thickness cross-section about the rolling direction as an axis of 3 or less, and having plate thickness parallel cracks measured by ultrasonic flaw detection of less than 1 mm. | 01-29-2009 |
20090065102 | High Strength Seamless Steel Pipe for Machine Structure Use Superior in Toughness and Weldability, and Method of Production of The Same - A high strength seamless steel pipe for machine structure use superior in toughness and weldability characterized by containing, by mass %, C: 0.03 to less than 0.1%, Mn: 0.8 to 2.5%, Ti: 0.005 to 0.035%, Nb: 0.003 to 0.04%, and B: 0.0003 to 0.003%, limiting Si: 0.5% or less, Al: 0.05% or less, P: 0.015% or less, S: 0.008% or less, and N: 0.008% or less, further containing one or more of Ni: 0.1 to 1.5%, Cr: 0.1 to 1.5%, Cu: 0.1 to 1.0%, and Mo: 0.05 to 0.5%, and having a balance of Fe and unavoidable impurities, the metallurgical structure being a single phase structure of self-tempered martensite or a mixed phase structure of self-tempered martensite and lower bainite. | 03-12-2009 |
Yoko Shinohara, Chiba JP
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20140125497 | TERMINAL DEVICE, COMMUNICATION SYSTEM AND METHOD OF ACTIVATING TERMINAL DEVICE - To realize high-performance sensing and lower power consumption as well as to improve the entire operation of measurement. A terminal device according to the present invention includes a plurality of sensors for measurement measuring physical quantities of measurement targets, a storage unit storing information for determining activation manners of the plural sensors for measurement, a control unit switching all or part of the plural sensors for measurement from a non-activated state to an activated state based on the information when activated and an activation unit including a sensor for activation to be driven based on a change of environment and activating the control unit when a physical quantity having correlation with the physical quantity of the measurement target is satisfied as a given activation condition based on a detection result by the sensor for activation. | 05-08-2014 |
20140128118 | TERMINAL DEVICE, COMMUNICATION SYSTEM AND METHOD OF ACTIVATING TERMINAL DEVICE - To provide a terminal device realizing high-performance sensing and lower power consumption. A terminal device according to the present invention includes a sensor for measurement measuring a physical quantity of a measurement target, a control unit switching the sensor for measurement from a non-activated state to an activated state when activated and an activation unit driven in lower power consumption than the sensor for measurement and activating the control unit when a physical quantity having correlation with the physical quantity of the measurement target is satisfied as a given activation condition, thereby realizing high-performance sensing and lower power consumption. | 05-08-2014 |
Yoriko Shinohara, Chiba JP
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20090149452 | XANTHINE OXIDASE INHIBITOR - A compound represented by the following formula (I) is used as a xanthine oxidase inhibitor: in which R | 06-11-2009 |