Patent application number | Description | Published |
20090045399 | FIELD EFFECT TRANSISTOR WITH GATE INSULATION LAYER FORMED BY USING AMORPHOUS OXIDE FILM - A field effect transistor includes a channel layer | 02-19-2009 |
20100044703 | AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND THIN FILM TRANSISTOR - An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of In | 02-25-2010 |
20100051936 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 03-04-2010 |
20100051937 | THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME - There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm. | 03-04-2010 |
20100051947 | AMORPHOUS INSULATOR FILM AND THIN-FILM TRANSISTOR - An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si. | 03-04-2010 |
20100065837 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS - A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode. | 03-18-2010 |
20100203673 | METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR - A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature. | 08-12-2010 |
20100283049 | OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME - Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×10 | 11-11-2010 |
20110042670 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode. | 02-24-2011 |
20110062441 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism. | 03-17-2011 |
20110168905 | X-RAY DETECTOR AND METHOD FOR MANUFACTURING THE SAME - An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide. | 07-14-2011 |
20110221302 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 09-15-2011 |
20110309356 | METHOD FOR FORMING SEMICONDUCTOR FILM, METHOD FOR FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment. | 12-22-2011 |
20120032173 | TOP GATE THIN FILM TRANSISTOR AND DISPLAY APPARATUS INCLUDING THE SAME - Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer. | 02-09-2012 |
20120037842 | ANTI-THERMALLY-EXPANSIVE RESIN AND ANTI-THERMALLY-EXPANSIVE METAL - Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi | 02-16-2012 |
20120040196 | THERMAL EXPANSION SUPPRESSING MEMBER AND ANTI-THERMALLY-EXPANSIVE MEMBER - Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi | 02-16-2012 |
20120146021 | AMORPHOUS OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND DISPLAY DEVICE - An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: | 06-14-2012 |
20120168750 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 07-05-2012 |
20130056671 | PIEZOELECTRIC CERAMICS, MANUFACTURING METHOD FOR PIEZOELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, ULTRASONIC MOTOR, OPTICAL APPARATUS, VIBRATION GENERATOR, DUST REMOVING DEVICE, IMAGING APPARATUS, AND ELECTRONIC APPARATUS - Provided is a piezoelectric ceramics that can achieve both high piezoelectric performance and a high Curie temperature. Also provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric ceramics. The piezoelectric ceramics include a perovskite-type metal oxide expressed by a general formula (1): xBaTiO | 03-07-2013 |
20130127298 | PIEZOELECTRIC MATERIAL AND DEVICES USING THE SAME - Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 05-23-2013 |
20130222482 | PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD AND LIQUID DISCHARGE APPARATUS - The piezoelectric element includes, on a substrate: a piezoelectric film; and a pair of electrodes provided in contact with the piezoelectric film; in which the piezoelectric film contains a perovskite-type metal oxide represented by the general formula (1) as a main component: | 08-29-2013 |
20130270965 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST REMOVING DEVICE - Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO | 10-17-2013 |
20130278681 | PIEZOELECTRIC CERAMIC, PIEZOELECTRIC ELEMENT, ULTRASONIC MOTOR, AND DUST REMOVING DEVICE - There is provided a lead-free piezoelectric ceramic having a high and stable piezoelectric constant and a high and stable mechanical quality factor in a wide operating temperature range. A method for manufacturing the lead-free piezoelectric ceramic is also provided. the general formula (1) | 10-24-2013 |
20140134038 | ANTI-THERMALLY-EXPANSIVE RESIN AND ANTI-THERMALLY-EXPANSIVE METAL - Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20° C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (Bi | 05-15-2014 |
20140178290 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 06-26-2014 |
20140234643 | THERMAL EXPANSION SUPPRESSING MEMBER AND ANTI-THERMALLY-EXPANSIVE MEMBER - Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20° C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (Bi | 08-21-2014 |
20140354738 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST REMOVING DEVICE - Provided is a piezoelectric material having high Curie temperature, high insulation property, and high piezoelectric performance, the piezoelectric material including a perovskite-type metal oxide represented by the general formula (1): xBaTiO | 12-04-2014 |
20150015121 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE - There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content α of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content β of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight | 01-15-2015 |
20150015642 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC DEVICE - There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content α of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ρ of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight | 01-15-2015 |
20150084048 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 03-26-2015 |