Patent application number | Description | Published |
20130134444 | STRESSED TRANSISTOR WITH IMPROVED METASTABILITY - An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor material is preserved and implant and anneal based relaxation mechanisms are avoided since the implants and anneals are performed prior to forming the embedded, strained epitaxial semiconductor material. | 05-30-2013 |
20130161649 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE - A method and structure are disclosed for increasing strain in a device, specifically an n-type field effect transistor (NFET) complementary metal-oxide-semiconductor (CMOS) device. Embodiments of this invention include an n-type field effect transistor (NFET) complementary metal-oxide-semiconductor (CMOS) device having a source region and a drain region, the NFET CMOS including: an n-type doped layer in at least one of the source region and the drain region, wherein the n-type doped layer includes substitutional carbon and has a memorized tensile stress induced by a stress memorization technique (SMT). | 06-27-2013 |
20130295740 | FORMING CMOS WITH CLOSE PROXIMITY STRESSORS - A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses. | 11-07-2013 |
20140073144 | LOW COST FLOWABLE DIELECTRIC FILMS - A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N | 03-13-2014 |
20140099763 | FORMING SILICON-CARBON EMBEDDED SOURCE/DRAIN JUNCTIONS WITH HIGH SUBSTITUTIONAL CARBON LEVEL - Embodiment of the present invention provides a method of forming a semiconductor device. The method includes providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of the semiconductor substrate; amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with a stress liner; and subjecting the amorphized silicon-carbon layer to a solid phase epitaxy (SPE) process to form a highly substitutional silicon-carbon film. In one embodiment, the highly substitutional silicon-carbon film is formed to be embedded stressors in the source/drain regions of an nFET transistor, and provides tensile stress to a channel region of the nFET transistor for performance enhancement. | 04-10-2014 |
20140329027 | LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION - Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si—Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si—Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer. | 11-06-2014 |
Patent application number | Description | Published |
20090239308 | METHOD AND APPARATUS FOR DETERMINING COPY NUMBER VARIATION USING DIGITAL PCR - A method of estimating a concentration of DNA molecules in a biological sample includes storing a number of a plurality of reaction sites in a memory and distributing the biological sample among the plurality of reaction sites. The method also includes determining a number of the plurality of reaction sites characterized by a presence of one or more of the DNA molecules and computing a portion of the plurality of reaction sites characterized by the presence of the one or more of the DNA molecules. The method further includes estimating the concentration of the DNA molecules as a function of the portion of the plurality of reaction sites and computing a confidence interval for the estimated concentration of DNA molecules. | 09-24-2009 |
20100119154 | IMAGE PROCESSING METHOD AND SYSTEM FOR MICROFLUIDIC DEVICES - A method for processing an image of a microfluidic device. The method includes receiving a first image of a microfluidic device. The first image corresponds to a first state. Additionally, the method includes receiving a second image of the microfluidic device. The second image corresponds to a second state. Moreover, the method includes transforming the first image and the second image into a third coordinate space. Also, the method includes obtaining a third image based on at least information associated with the transformed first image and the transformed second image, and processing the third image to obtain information associated with the first state and the second state. | 05-13-2010 |
20100203538 | DETERMINATION OF COPY NUMBER DIFFERENCES BY AMPLIFICATION - The present invention provides for determining relative copy number difference for one or more target nucleic acid sequences between a test sample and a reference sample or reference value derived therefrom. The methods facilitate the detection of copy number differences less than 1.5-fold. | 08-12-2010 |
20120245888 | METHODS AND SYSTEMS FOR IMAGE PROCESSING OF MICROFLUIDIC DEVICES - A method of processing data associated with fluorescent emissions from a microfluidic device. The method includes performing an auto-focus process associated with a first image of the microfluidic device and performing an auto-exposure process associated with the first image of the microfluidic device. The method also includes capturing a plurality of images of the microfluidic device. The plurality of images are associated with a plurality of thermal cycles. The method further includes performing image analysis of the plurality of captured images to determine a series of optical intensities and performing data analysis of the series of optical intensities to provide a series of change in threshold values. | 09-27-2012 |
20120322058 | Analysis of nucleic acids - Provided herein are improved methods, compositions, and kits for analysis of nucleic acids. The improved methods, compositions, and kits can enable copy number estimation of a nucleic acid in a sample. Also provided herein are methods, compositions, and kits for determining the linkage of two or more copies of a target nucleic acid in a sample (e.g., whether the two or more copies are on the same chromosome or different chromosomes) or for phasing alleles. | 12-20-2012 |
20140133732 | METHODS AND SYSTEMS FOR IMAGE PROCESSING OF MICROFLUIDIC DEVICES - A method of processing data associated with fluorescent emissions from a microfluidic device. The method includes performing an auto-focus process associated with a first image of the microfluidic device and performing an auto-exposure process associated with the first image of the microfluidic device. The method also includes capturing a plurality of images of the microfluidic device. The plurality of images are associated with a plurality of thermal cycles. The method further includes performing image analysis of the plurality of captured images to determine a series of optical intensities and performing data analysis of the series of optical intensities to provide a series of change in threshold values. | 05-15-2014 |
20140154679 | DETERMINATION OF COPY NUMBER DIFFERENCES BY AMPLIFICATION - The present invention provides for determining relative copy number difference for one or more target nucleic acid sequences between a test sample and a reference sample or reference value derived therefrom. The methods facilitate the detection of copy number differences less than 1.5-fold. | 06-05-2014 |
Patent application number | Description | Published |
20100179214 | DOXEPIN TRANS ISOMERS AND ISOMERIC MIXTURES AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - The invention relates to use of the trans-(E) isomer or isomeric mixtures containing specified ratios of the trans-(E) and cis-(Z) isomers of doxepin, metabolites of doxepin, pharmaceutically-acceptable salts of doxepin and prodrugs of the same; compositions containing the same, for the treatment of sleep disorders | 07-15-2010 |
20100179215 | DOXEPIN ISOMERS AND ISOMERIC MIXTURES AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - The invention relates to use of the cis-(Z) isomer or isomeric mixtures containing specified ratios of the cis-(Z) and trans-(E) isomers of doxepin, metabolites of doxepin, pharmaceutically-acceptable salts of doxepin and prodrugs of the same; compositions containing the same, for the treatment of sleep disorders | 07-15-2010 |
20100227916 | N-DESMETHYL-DOXEPIN AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - The invention relates to desmethyldoxepin, isomers of desmethyldoxepin, and pharmaceutically acceptable salts and prodrugs of desmethyldoxepin; compositions containing the same, and the use of any of the aforementioned for the treatment of sleep disorders. | 09-09-2010 |
20130096188 | DOXEPIN TRANS ISOMERS AND ISOMERIC MIXTURES AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - The invention relates to use of the trans-(E) isomer or isomeric mixtures containing specified ratios of the trans-(E) and cis-(Z) isomers of doxepin, metabolites of doxepin, pharmaceutically-acceptable salts of doxepin and prodrugs of the same; compositions containing the same, for the treatment of sleep disorders | 04-18-2013 |
20130102658 | DOXEPIN ISOMERS AND ISOMERIC MIXTURES AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - The invention relates to use of the cis-(Z) isomer or isomeric mixtures containing specified ratios of the cis-(Z) and trans-(E) isomers of doxepin, metabolites of doxepin, pharmaceutically-acceptable salts of doxepin and prodrugs of the same; compositions containing the same, for the treatment of sleep disorders | 04-25-2013 |
20130296413 | N-DESMETHYL-DOXEPIN AND METHODS OF USING THE SAME TO TREAT SLEEP DISORDERS - Desmethyldoxepin, isomers of desmethyldoxepin, and pharmaceutically acceptable salts and prodrugs of desmethyldoxepin; compositions containing the same, and the use of any of the aforementioned for the treatment of sleep disorders. | 11-07-2013 |