Bachir
Bachir Babale, Yokohama JP
Patent application number | Description | Published |
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20140160320 | VIRTUAL DECALS FOR PRECISION ALIGNMENT AND STABILIZATION OF MOTION GRAPHICS ON MOBILE VIDEO - The virtual decals for precision alignment of motion graphics of the present invention provides a method by which a person using a mobile video capturing device may apply a special effect or motion graphic to the video being captured using a virtual decal present on the screen of the mobile device, providing a reference to the user allowing the user to compensate for camera movement and properly frame the video to which the motion graphic will be applied using post-processing. The present invention further provides a method for measuring the optic flow of a given video scene and applying that data in a predictive manner so as to stabilize a motion graphic against the scene. Post processing places such a motion graphic within the processed video in such a way that it appears to be part of the original scene. | 06-12-2014 |
Bachir Berkane, Ottawa CA
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20150156284 | METHODS AND APPARATUSES FOR A UNIFIED COMPRESSION FRAMEWORK OF BASEBAND SIGNALS - A method and apparatus provides a parameter estimation processor configured to estimate parameters used to compress data for transmission over a serial data link. The parameter estimation processor includes a processor. The processor includes user programmable inputs. The user programmable inputs set an input data packet length, a target compression ratio, and a resampling factor and allow filter parameters to be set. Input data information is received from an input data buffer of a data sample compressor. The processor performs a function that: (a) adjusting a target compression ratio by a first compression ratio to determine a remaining compression ratio when the resampling operation is enabled; (b) estimating a set of compression parameters that are used to achieve the remaining compression ratio, the set of compression parameters includes an attenuation value, filter order, a type of encoding; and (c) sends the set of compression parameters to the data sample compressor. The data sample compressor applies the compression parameters to a packet of input data and outputs a plurality of compressed data words. | 06-04-2015 |
Bachir Dirahoui, Bedford Hills, NY US
Patent application number | Description | Published |
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20090256207 | FINFET DEVICES FROM BULK SEMICONDUCTOR AND METHODS FOR MANUFACTURING THE SAME - Disclosed herein is a transistor comprising a first fin having a first gate electrode disposed across the first fin; the gate electrode contacting opposing surfaces of the fin; and a planar oxide layer having a second gate electrode disposed across the planar oxide layer to form a planar metal oxide semiconductor field effect transistor; the first fin and the planar oxide layer being disposed upon a surface of a wafer. | 10-15-2009 |
20100006926 | METHODS FOR FORMING HIGH PERFORMANCE GATES AND STRUCTURES THEREOF - Methods for forming high performance gates in MOSFETs and structures thereof are disclosed. One embodiment includes a method including providing a substrate including a first short channel active region, a second short channel active region and a long channel active region, each active region separated from another by a shallow trench isolation (STI); and forming a field effect transistor (FET) with a polysilicon gate over the long channel active region, a first dual metal gate FET having a first work function adjusting material over the first short channel active region and a second dual metal gate FET having a second work function adjusting material over the second short channel active region, wherein the first and second work function adjusting materials are different. | 01-14-2010 |
20130175665 | THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES - A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %. | 07-11-2013 |
20150044853 | THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES - A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %. | 02-12-2015 |
Bachir Kaloun El, Roquettes FR
Patent application number | Description | Published |
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20090042876 | Pyrroloquinoline Derivatives And Their Use As Protein Kinases Inhibitors - The present invention relates to inhibitors of protein kinases of formula I: | 02-12-2009 |