Chakrapani
Aravind Chakrapani, Bangalore IN
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20110038900 | NANOPARTICLES FOR USE IN PHARMACEUTICAL COMPOSITIONS - In various aspects of the present invention, nanoparticle compositions are provided which comprise (a) nanoparticles comprising at least one biodegradable polymer and (b) at least one pharmaceutical associated with the nanoparticles. In other aspects of the present invention, methods of forming nanoparticles compositions are provided, which comprise contacting a first liquid that comprises one or more biodegradable polymers dissolved in a first solvent with a second liquid that comprises a second solvent which is miscible with the first solvent while being a non-solvent for the one or more biodegradable polymers, such that nanoparticles are formed. | 02-17-2011 |
Harinath Chakrapani, Pune IN
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20140121211 | THIOL MEDIATED/ACTIVATED PRODRUGS OF SULFUR DIOXIDE (SO2) HAVING ANTI-BACTERIAL ACTIVITY - Disclosed herein are thiol mediated/activated prodrugs of SO | 05-01-2014 |
Harinath Chakrapani, Maharashtra IN
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20100184992 | STABLE NEUTRAL NITRIC OXIDE SOURCE - C-nitroso compound capable of releasing neutral nitric oxide is made stable by forming a Diels Alder adduct thereof which is functionalized at the Diels-Alder double bond to impart the stability. Treatment of the stabilized adduct with agent that removes functionalization and regenerates Diels Alder double bond triggers delivery of neutral nitric oxide via retro Diels-Alder reaction and homolytic scission. | 07-22-2010 |
Harinath Chakrapani, Pashan Pune IN
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20120238518 | DIAZENIUMDIOLATED COMPOUNDS, PHARMACEUTICAL COMPOSITIONS, AND METHOD OF TREATING CANCER - Disclosed is a method of treating cancer in a patient comprising administering to the patient an effective amount of a diazeniumdiolated (N | 09-20-2012 |
Jai Chakrapani, Sammamish, WA US
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20090112474 | View-Independent Tagging of Geospatial Entities in Images - In some aspects, locations of geospatial entities in a map image are identified. A record of entity model-to-tag mappings is accessed so that tag data corresponding to a geospatial entity in the map image can be identified. Both the tag data and an outline surrounding the location of the geospatial entity corresponding to the tag data is displayed on the map image. In other aspects, a user selection of a location on a map image is received. A record of entity models is accessed to identify an entity model corresponding to a geospatial entity at that location on the map image. An outline of the geospatial entity is displayed on the map image and tag data for the geospatial entity is identified. The tag data is also displayed on the map image, and a record mapping the tag data to the identified entity model is created. | 04-30-2009 |
Lakshminarasimhan B. Chakrapani, Houston, TX US
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20110321067 | COMPUTING DEVICE USING INEXACT COMPUTING ARCHITECTURE PROCESSOR - In general, in one aspect, the invention relates to a computer readable medium including software instructions which, when executed by a processor, perform a method, the method including receiving a first method call from an application, wherein the first method call is associated with a first application component; obtaining a first application component error tolerance (ACET) value associated with the first method call; determining, using the first ACET value and a first inexact amount value (IAV) of a first inexact computing architecture (ICA) Processor (ICA) processor, that the first ICA processor is available to execute the first method call; and processing the first method call using the first ICA processor. | 12-29-2011 |
Srinivasan Chakrapani, Bridgewater, NJ US
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20090042148 | Photoresist Composition for Deep UV and Process Thereof - The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist. | 02-12-2009 |
20090053652 | PHOTORESIST COMPOSITIONS - Photoresist compositions are disclosed. | 02-26-2009 |
20100136477 | Photosensitive Composition - The present invention relates to a novel photosensitive composition comprising a) an organic polymer, b) a photobase generator of structure (1), and c) optionally a photoacid generator, | 06-03-2010 |
20110076626 | Positive-Working Photoimageable Bottom Antireflective Coating - The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating. | 03-31-2011 |
20110086312 | Positive-Working Photoimageable Bottom Antireflective Coating - The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is | 04-14-2011 |
20120108067 | Edge Bead Remover For Coatings - The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge bead remover for an organic film. | 05-03-2012 |
20120122029 | Underlayer Developable Coating Compositions and Processes Thereof - The present invention relates to a photoimageable underlayer composition comprising a polymer, a crosslinker comprising a vinyl ether group, and a thermal acid generator comprising a salt of a mono or polycarboxylic acid and an amine, where the amine has a boiling point of at least 150° C. The invention also relates to a process for forming an image in the underlayer comprising the novel composition. | 05-17-2012 |
20120308939 | BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS AND PROCESSES THEREOF - The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, | 12-06-2012 |
20130157196 | COMPOSITION FOR FORMING A DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING - The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent. | 06-20-2013 |
20140193753 | COMPOSITION FOR FORMING A DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING - The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent. | 07-10-2014 |
Vidhya Chakrapani, Guilderland, NY US
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20140370717 | ETCH PROCESS FOR REDUCING DIRECTED SELF ASSEMBLY PATTERN DEFECTIVITY - Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature. | 12-18-2014 |
20140370718 | ETCH PROCESS FOR REDUCING DIRECTED SELF ASSEMBLY PATTERN DEFECTIVITY USING DIRECT CURRENT POSITIONING - A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a block copolymer layer overlying a first intermediate layer, said block copolymer layer comprising a first phase-separated polymer defining a first pattern and a second phase-separated polymer defining a second pattern in said block copolymer layer is provided. A first plasma etching process using plasma formed of a first process composition to remove said second phase-separated polymer while leaving behind said first pattern of said first phase-separated polymer is performed. A second plasma etching process to transfer said first pattern into said first intermediate layer using plasma formed of a second process composition is performed. In an embodiment, said first phase-separated polymer is exposed to an electron beam preceding, during, or following said first plasma etching process, or preceding or during said second plasma etching process. | 12-18-2014 |