Patent application number | Description | Published |
20090042062 | INTERLAYER DESIGN FOR MAGNETIC MEDIA - A magnetic recording medium having a substrate, an interlayer and a magnetic layer, the interlayer having at least a first intermediary layer, a second intermediary layer and a third intermediary layer, wherein the first intermediary layer or the third intermediary layer is non-magnetic or magnetic and the second intermediary layer has a hexagonal close pack crystal structure and a property of providing RKKY coupling between the first intermediary layer and the third intermediary layer when the first intermediary layer and the second intermediary layer are magnetic layers is disclosed. | 02-12-2009 |
20090235983 | Interlayer Design for Epitaxial Growth of Semiconductor Layers - An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells. | 09-24-2009 |
20100124671 | LOW COUPLING OXIDE MEDIA (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm | 05-20-2010 |
20100165508 | MAGNETIC LAYERING FOR BIT-PATTERNED MEDIA - A perpendicular magnetic recording layer of a magnetic recording medium includes a plurality of bit-patterned magnetic islands, wherein each of the plurality of islands overlay a soft magnetic under-layer. Each of the magnetic islands includes a first magnetic sub-layer adjacent a second magnetic sub-layer, wherein the first sub-layer has a relatively high magnetic anisotropy that is greater than a magnetic anisotropy of the second sub-layer. The magnetic recording layer further includes a third sub-layer, which extends to connect each of the plurality of islands. The third sub-layer may have a magnetic anisotropy that is less than that of the second sub-layer of each of the magnetic islands and/or may serve as an interlayer, extending between the first sub-layer and the soft magnetic under-layer of the recording medium, and having a structure to help to produce the greater anisotropy first magnetic sub-layer. | 07-01-2010 |
20110076515 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 03-31-2011 |
20130045394 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 02-21-2013 |
20130133727 | SEMICONDUCTOR GRAIN MICROSTRUCTURES FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy. | 05-30-2013 |
20130228217 | SEMICONDUCTOR GRAIN AND OXIDE LAYER FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. | 09-05-2013 |
Patent application number | Description | Published |
20100081012 | PERPENDICULAR MEDIA WITH Cr-DOPED Fe-ALLOY-CONTAINING SOFT UNDERLAYER (SUL) FOR IMPROVED CORROSION PERFORMANCE - A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed. | 04-01-2010 |
20110011460 | Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same - In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te). | 01-20-2011 |
20110124150 | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. | 05-26-2011 |
20110290643 | Low Melting Point Sputter Targets for Chalcogenide Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu | 12-01-2011 |
20120192936 | Thin-Film Photovoltaic Structures Including Semiconductor Grain and Oxide Layers - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. | 08-02-2012 |
20120238053 | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding | 09-20-2012 |
20140069502 | CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. | 03-13-2014 |
Patent application number | Description | Published |
20090011283 | Hcp soft underlayer - A perpendicular magnetic recording medium of the embodiments of the invention comprises a substrate, a hcp soft underlayer (SUL), and a magnetic layer, wherein the hcp SUL is adapted to create a [0002] growth orientation in the magnetic layer and to enhance a magnetic head field during writing of data to the magnetic layer; further wherein the perpendicular magnetic recording medium does not contain an interlayer (IL) that is different from the hcp SUL and provides a [0002] growth orientation in the magnetic layer. | 01-08-2009 |
20090280357 | PERPENDICULAR MAGNECTIC RECORDING MEDIA WITH IMPROVED FCC AU-CONTAINING INTERPLAYERS - A perpendicular magnetic recording medium, comprising a non-magnetic interlayer structure selected from the group consisting of:
| 11-12-2009 |
20100209739 | MAGNETIC STORAGE MEDIA WITH Ag, Au-CONTAINING MAGNETIC LAYERS - A magnetic recording medium having a Au, Ag-containing magnetic layer having Co, Cr, Ag and Au; the magnetic recording layer having Co-containing magnetic grains surrounded by substantially nonmagnetic Cr-containing grain boundaries; wherein said Ag and said Au are substantially immiscible in the Co-containing magnetic grains is disclosed. | 08-19-2010 |
20100266755 | FERROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction. | 10-21-2010 |
20130045396 | FERROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction. | 02-21-2013 |
20140287268 | CoPtCr-BASED BIT PATTERNED MAGNETIC DEVICE - Provided herein is an apparatus, including a plurality of spaced apart perpendicular magnetic elements. Each of the magnetic elements includes a respective discrete magnetic domain and each of the magnetic elements includes a magnetic recording layer comprising a Co | 09-25-2014 |
20140356649 | FEROMAGNETICALLY COUPLED MAGNETIC RECORDING MEDIA - A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high M | 12-04-2014 |