Patent application number | Description | Published |
20090078153 | CORROSION INHIBITING PIGMENT COMPRISING NANORESERVOIRS OF CORROSION INHIBITOR - A corrosion inhibiting pigment includes nanoscale reservoirs (nanoreservoirs) of corrosion inhibitor for active corrosion protection of metallic products and structures, wherein the nanoreservoirs include a polymer or polyelectrolyte shell which is sensitive to a specific trigger and capable of releasing the inhibitor after action of the trigger. An anti-corrosive coating with self-healing properties includes the pigment, methods for preparing the pigment, in particular by layer-by-layer deposition, as well as methods of use of the pigment. | 03-26-2009 |
20100206745 | CORROSION INHIBITING COATING FOR ACTIVE CORROSION PROTECTION OF METAL SURFACES COMPRISING A SANDWICH-LIKE INHIBITOR COMPLEX - A corrosion inhibiting coating for active corrosion protection of a metal substrate includes, deposited on the metal substrate, a sandwich-like complex including a first inner layer of organic species, a corrosion inhibitor layer and a second outer layer of organic species, which coating is sensitive to at least one specific stimulus and releases the corrosion inhibitor in response to the stimulus. | 08-19-2010 |
20110236596 | CORROSION INHIBITING COATINGS CONTROLLABLE BY ELECTROMAGNETIC IRRADIATION AND METHODS FOR CORROSION INHIBITION USING THE SAME - A corrosion inhibiting coating includes a primer layer having incorporated therein corrosion inhibitor-loaded containers which release a corrosion inhibitor in response to electromagnetic irradiation; and a container-free protective top layer which, when intact, prevents spontaneous opening of the containers in the primer layer induced by electromagnetic irradiation, wherein the coating-releases an inhibitor in response to electromagnetic irradiation if the protective top layer contains defective areas which enable direct exposure of the containers to the electromagnetic irradiation. | 09-29-2011 |
20130145957 | CORROSION INHIBITING PIGMENTS AND METHODS FOR PREPARING THE SAME - A pigment includes reservoirs of encapsulated corrosion inhibitors and/or biocides for active corrosion and/or antifouling protection of metallic and polymeric products and structures, wherein the reservoirs have average dimensions of 10-50000 nm and comprise a porous surface/interface, a porous or empty interior and stimuli-sensitive stoppers that release an encapsulated inhibitor or biocide outside the reservoir upon action of a stimulus selected from the group consisting of an external electromagnetic field, changes in local pH, ionic strength and ambient temperature, wherein the stimuli-sensitive stoppers result from a chemical or physical interaction between encapsulated corrosion inhibitor and/or biocide or encapsulated solvent/dispersing agent and an additional external compound and prevent release of an encapsulated inhibitor or biocide towards an exterior of the reservoir in the absence of the stimulus. | 06-13-2013 |
20130210969 | FEEDBACK ACTIVE COATINGS WITH SENSITIVE CONTAINERS BASED ON NANO-, MICRO-, MINI-, AND MACROEMULSIONS OF DIRECT OR REVERSED TYPE - Nano- or microsized containers include either a water immiscible or sparingly miscible core dispersible in aqueous dispersion medium or a water miscible core dispersible in non-aqueous dispersion medium and a core-soluble active agent selected from the group consisting of corrosion inhibitors, catalysts, accelerators of catalysts, adhesives, sealants, polymerizable compounds (monomers), surfactants, lubricants, antifouling agents, water repelling materials and their mixtures, and a stimulus-sensitive polymer/polyelectrolyte shell that encapsulates the core-soluble active agent and releases the encapsulated agent in response to an external stimulus selected from the group consisting of humidity, ionic strength, pH, temperature, mechanical stress, constant and alternating magnetic or electromagnetic fields, corrosion products, electric current, and electrochemical potential. | 08-15-2013 |
Patent application number | Description | Published |
20090041464 | Anti Stark Electrooptic Medium and Electrooptically Modulated Optoelectronic Device Based Thereupon - Semiconductor electrooptic medium shows behavior different from a medium based on quantum confined Stark Effect. A preferred embodiment has a type-II heterojunction, selected such, that, in zero electric field, an electron and a hole are localized on the opposite sides of the heterojunction having a negligible or very small overlap of the wave functions, and correspondingly, a zero or a very small exciton oscillator strength. Applying an electric field results in squeezing of the wave functions to the heterojunction which strongly increases the overlap of the electron and the hole wave functions, resulting in a strong increase of the exciton oscillator strength. Another embodiment of the novel electrooptic medium includes a heterojunction between a layer and a superlattice, wherein an electron and a hole in the zero electric field are localized on the opposite sides of the heterojunction, the latter being effectively a type-II heterojunction. Yet another embodiment has a heterojunction between two superlattices, wherein an electron and a hole in a zero electric field are localized on the opposite sides of the heterojunction, the latter operating effectively as a type-II heterojunction. A further embodiment has an ultrathin quantum well layer confined by barrier layers, having an essentially different barrier heights and a thick layer, wherein, in a zero electric field, a charged particle of one sign having a large effective mass is localized in this ultrathin layer, and a particle having a different sign of the charge, having a small effective mass is not localized in this ultrathin layer, but is localized mainly in the neighboring thick layer. Thus, the heterojunction between the two layers operates effectively as a type-II heterojunction. Applying an electric field to all types of the electrooptic medium of the present invention results in a dramatic increase of the exciton oscillator strength and, therefore, in a large positive refractive index change at the photon energies below the exciton absorption peak. A very strong increase in the optical transition photon energy can be achieved, when necessary. | 02-12-2009 |
20090116525 | OPTOELECTRONIC SYSTEMS PROVIDING HIGH-POWER HIGH-BRIGHTNESS LASER LIGHT BASED ON FIELD COUPLED ARRAYS, BARS AND STACKS OF SEMICONDUTOR DIODE LASERS - A semiconductor diode laser having a broad vertical waveguide and a broad lateral waveguide is disclosed emitting laser-light in a single vertical mode and a single lateral mode narrow beam. The vertical waveguide comprises a coupled cavity structure, wherein light, generated in the active medium placed in the first cavity leaks into the second cavity and returns back. Phase matching conditions govern the selection of a single vertical mode. A multi-stripe lateral waveguide comprises preferably a lateral photonic band crystal with a lateral optical defect created by selected pumping of multistripes. This approach allows the selection of a single lateral mode having a higher optical confinement factor and/or a lower absorption loss and/or a lower leakage loss compared to the rest lateral optical modes. This enables a single lateral mode lasing from a broad area field coupled laser array. A laser system comprised of multiple field coupled laser arrays on a single wafer and a set of external mirrors enables an ultra-broad field coupled laser bar emitting a coherent laser light in a single vertical optical mode and a single lateral optical mode. A laser system comprised of multiple ultra-broad field coupled laser bars on different wafers and a set of external mirrors enables an ultra-broad field coupled laser stack emitting coherent laser light in a single vertical optical mode and a single lateral optical mode. This allows realization of ultrahigh power ultrahigh brightness laser systems based on semiconductor diode lasers. | 05-07-2009 |
20090296754 | Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector - A device contains at least one wavelength-tunable multilayer interference reflector controlled by an applied voltage and at least one cavity. The stopband edge wavelength of the wavelength-tunable multilayer interference reflector is preferably electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode (or a composite cavity mode), resulting in a modulated transmittance of the multilayer interference reflector. A light-emitting medium is preferably introduced in the cavity or in one of the cavities permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply forward or reverse bias and may operate as a vertical cavity surface-emitting light emitter or modulator or as an edge-emitting light emitter or modulator. Using a multilayer interference reflector containing tunable section allows also obtaining a wavelength-tunable laser or a wavelength-tunable resonant cavity photodetector in the case where the optical field profile in the active cavity or cavities is affected by the stopband wavelength shift. Adding additional modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers. | 12-03-2009 |
20100135348 | METHOD FOR IMPROVEMENT OF BEAM QUALITY AND WAVELENGTH STABILIZED OPERATION OF A SEMICONDUCTOR DIODE LASER WITH AN EXTENDED WAVEGUIDE - A method is disclosed for improving the functionality of a semiconductor diode laser with an extended vertical waveguide, wherein the active medium is located close to the top cladding layer of the waveguide, and the laser aims to emit light in a narrow beam with high brightness and/or to operate in the wavelength-stabilized regime. The goal is to suppress parasitic optical modes localized close to the top cladding layer of the waveguide. Unpumped sections and groves perpendicular to the stripe serve to suppress these parasitic modes. Deep (preferably a few tens of micrometers) groves parallel to the stripe suppress parasitic emission of light and the feedback in the closed lateral modes. In a tilted wave laser the longitudinal resonator can be preferably configured to have a selected length to ensure closed loops formed in the longitudinal direction by the tilted wave. | 06-03-2010 |
20100278201 | WAVELENGTH DIVISION MULTIPLEXING SYSTEM - A wavelength division multiplexing system has an array of wavelength-tunable lasers with at least two wavelength-tunable lasers emitting laser light at mutually different wavelengths, a first diffraction grating, an optical fiber, a second diffraction grating, and an array of photodetectors. The laser light emitted by the different wavelength-tunable lasers wavelengths impinges upon the first diffraction grating where it is reflected so as to impinge on an input end of the optical fiber. The light then propagates in the optical fiber and comes out from an output end of the optical fiber. Then the laser light having at least two different wavelengths further impinges on a second diffraction grating, whereupon it is reflected such that laser light having a first wavelength impinges on a first photodetector, and laser light having a second wavelength impinges on a second photodetector, which is different from the first photodetector. | 11-04-2010 |
20110076026 | Method for encoding and decoding of optical signals - The present invention refers to a method for robust multi-level encoding of optical signals. The method uses a transmitter that transforms electric signals into optical signals and a receiver capable to transform optical signals into electric signals. The transmitter is capable to generate optical pulses having at least two different durations. The amplitudes of the pulses are preferably close to each other. The transmitter is fast, and the receiver is slow such that the response time of the receiver exceeds at least the shortest of the durations of the optical pulses. Then the receiver effectively integrates the optical signal and generates the electric signal having a larger amplitude when the optical signal has a larger duration. Thus, the method converts the modulation in pulse duration into the modulation in signal amplitude. In different embodiments of the present invention, the transmitter can be realized by a light-emitting diode, superluminescent light-emitting diode, or a diode laser. The receiver can be realized by a p-i-n diode, by a resonant cavity photodetector, or by an avalanche photodiode. | 03-31-2011 |
20110165707 | METHOD FOR ATTACHING OPTICAL COMPONENTS ONTO SILICON-BASED INTEGRATED CIRCUITS - Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A specific sacrificial or removable separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. It is possible to place and interconnect VCSELs directly within the physical structure of the integrated circuit, thus greatly reducing the power requirements, the distance of interconnecting lines, and the resultant operational speed. A variation allows the selective placement of groups of physically-connected VCSELs, and the collection and placement of large numbers of fabricated VCSELs onto foreign substrates using a vacuum plating tool. | 07-07-2011 |
20130092896 | Optoelectronic Device with a Wide Bandgap and Method of Making Same - A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of Al | 04-18-2013 |
20130122617 | METHOD OF FABRICATING OPTOELECTRONIC DEVICES DIRECTLY ATTACHED TO SILICON-BASED INTEGRATED CIRCUITS - Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. | 05-16-2013 |