Patent application number | Description | Published |
20120234800 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120234801 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120238111 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 09-20-2012 |
20120261395 | ANNEALING APPARATUS USING TWO WAVELENGTHS OF CONTINUOUS WAVE LASER RADIATION - A thermal processing apparatus and method in which a first laser source, for example, a CO | 10-18-2012 |
20130056054 | HIGH WORK FUNCTION LOW RESISTIVITY BACK CONTACT FOR THIN FILM SOLAR CELLS - Back contact materials and processes for use in the manufacturing of CdTe, CIGS, and CZTS TFPV superstrate solar cells are described. High conductivity, high work function materials of ReO | 03-07-2013 |
20130065355 | LASER ANNEALING FOR THIN FILM SOLAR CELLS - A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results. | 03-14-2013 |
20130081688 | BACK CONTACTS FOR THIN FILM SOLAR CELLS - Method for forming back contact stacks for CIGS and CZTS TFPV solar cells are described wherein some embodiments include adhesion promoter layers, bulk current transport layers, stress management/diffusion barrier layers, optical reflector layers, and ohmic contact layers. Other back contact stacks include adhesion promoter layers, bulk current transport layers, diffusion barrier layers, and ohmic contact layers. | 04-04-2013 |
20130109126 | BACK-CONTACT FOR THIN FILM SOLAR CELLS OPTIMIZED FOR LIGHT TRAPPING FOR ULTRATHIN ABSORBERS | 05-02-2013 |
20130109131 | METHOD OF FABRICATING CIGS BY SELENIZATION AT HIGH TEMPERATURE | 05-02-2013 |
20130122642 | Method of Fabricating CIGS By Selenization At High Temperature - A method for high temperature selenization of Cu—In—Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a Se-containing atmosphere. The Se-containing component of the atmosphere is removed through a rapid gas exchange process and the CIGS film is annealed to influence the Ga distribution throughout the depth of the film. | 05-16-2013 |
20130143355 | Back-Contact for Thin Film Solar Cells Optimized for Light Trapping for Ultrathin Absorbers - Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc. | 06-06-2013 |
20130157408 | ABSORBER LAYER FOR A THIN FILM PHOTOVOLTAIC DEVICE WITH A DOUBLE-GRADED BAND GAP - A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer. | 06-20-2013 |
20130164885 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for depositing a Cu-rich precursor layer followed by a Cu-poor precursor layer. Methods are described for depositing a Cu-poor precursor layer followed by a Cu-rich precursor layer. Methods are described for depositing a Cu-poor precursor layer followed by a Cu-poor precursor layer. Methods are described for depositing a Cu-rich precursor layer followed by removing excess Cu-chalcogenide using a wet etch, followed by a Cu-poor precursor layer. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. | 06-27-2013 |
20130164886 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber. | 06-27-2013 |
20130164916 | ABSORBERS FOR HIGH EFFICIENCY THIN-FILM PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer. | 06-27-2013 |
20130164917 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing metal chalcogenide layers to impact the band gap and the morphology of the absorber layer. | 06-27-2013 |
20130164918 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CZTS absorber layers in TFPV devices with graded compositions and graded bandgaps. Methods are described for utilizing at least one of Zn, Ge, or Ag to alter the bandgap within the absorber layer. Methods are described for utilizing Te, S, Se, O, Cd, Hg, or Sn to alter the bandgap within the absorber layer. Methods are described for utilizing either a 2-step process or a 4-step process to alter the bandgap within the absorber layer. | 06-27-2013 |
20130295748 | METHOD OF UNIFORM SELENIZATION AND SULFERIZATION IN A TUBE FURNACE - A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 350 C and about 450 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres. A partial selenization is performed at a temperature between about 350 C and about 450 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 450 C and about 550 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres, followed by an additional selenization step at a temperature between about 450 C and about 550 C in a Se-containing atmosphere. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas. | 11-07-2013 |
20130309804 | Method of Fabricating High Efficiency CIGS Solar Cells - A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency. | 11-21-2013 |
20130309805 | Method of Fabricating High Efficiency CIGS Solar Cells - A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency. | 11-21-2013 |
20130309850 | METHOD OF FABRICATING HIGH EFFICIENCY CIGS SOLAR CELLS - A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency. | 11-21-2013 |
20130344646 | Absorbers for High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer. | 12-26-2013 |
20140038345 | Method of chalcogenization to form high quality cigs for solar cell applications - A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a temperature between about 300 C and about 400 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 400 C and about 550 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas. | 02-06-2014 |
20140041722 | Method of Fabricating High Efficiency CIGS Solar Cells - A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency. | 02-13-2014 |
20140080250 | Method of Fabricating High Efficiency CIGS Solar Cells - A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber. | 03-20-2014 |
20140110813 | Absorbers for High Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer. | 04-24-2014 |
20140113403 | High efficiency CZTSe by a two-step approach - Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu—Zn—Sn—(S, Se) precursor film is formed by sputtering. The Cu—Zn—Sn—(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H | 04-24-2014 |
20140158190 | Absorbers for High Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber. | 06-12-2014 |
20140170422 | Low emissivity coating with optimal base layer material and layer stack - A method for making low emissivity panels, including forming a base layer to promote a seed layer for a conductive silver layer. The base layer can be an amorphous layer or a nanocrystalline layer, which can facilitate zinc oxide seed layer growth, together with smoother surface and improved thermal stability. The base layer can include doped tin oxide, for example, tin oxide doped with Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or any combination thereof. The doped tin oxide base layer can influence the growth of (002) crystallographic orientation in zinc oxide, which in turn serves as a seed layer template for silver (111). | 06-19-2014 |
20140170802 | Absorber Layer for a Thin Film Photovoltaic Device With a Double-Graded Band Gap - A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer. | 06-19-2014 |
20140170803 | CIGS Absorber Formed By Co-Sputtered Indium - In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport. | 06-19-2014 |
20140182665 | Optical Absorbers - Optical absorbers, solar cells comprising the optical absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a layer comprising a semiconductor having a bandgap of between about 1.0 eV and about 1.6 eV on a substrate. The thickness of the layer is from about 1 to about 10 microns. The semiconductor comprises Fe, at least one Group IVA element, and at least one Group VIA element. The Group VIA element can be S, Se or Te. The Group IVA element can be Si or Ge. Typical compositions are Fe | 07-03-2014 |
20140186995 | Method of fabricating cigs solar cells with high band gap by sequential processing - A method for forming TFPV absorber layer. A first layer including In is formed on a substrate. The first layer is partially or fully selenized to form a layer that includes In | 07-03-2014 |
20140264320 | Compositional Graded IGZO Thin Film Transistor - A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like. | 09-18-2014 |
20140264321 | Method of Fabricating IGZO by Sputtering in Oxidizing Gas - In some embodiments, oxidants such as ozone (O | 09-18-2014 |
20140264708 | Optical Absorbers - Optical absorbers, solar cells comprising the absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a semiconductor layer having a bandgap of between about 1.0 eV and about 1.6 eV disposed on a substrate, wherein the semiconductor comprises two or more earth abundant elements. The bandgap of the optical absorber is graded through the thickness of the layer by partial substitution of at least one grading element from the same group in the periodic table as the at least one of the two or more earth abundant elements. | 09-18-2014 |
20140273311 | Optical Absorbers - Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In | 09-18-2014 |
20140273333 | Methods for fabricating ZnOSe alloys - Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium. | 09-18-2014 |
20140273407 | Formulations And Methods For Surface Cleaning And Passivation of CdTe Substrates - Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used. | 09-18-2014 |
20140370646 | ABSORBER LAYER FOR A THIN FILM PHOTOVOLTAIC DEVICE WITH A DOUBLE-GRADED BAND GAP - A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer. | 12-18-2014 |
20150179839 | CONTACT LAYERS FOR PHOTOVOLTAIC DEVICES - Solar cells and methods for forming a back contact layer for a solar cell are disclosed. The methods comprise depositing a first layer comprising a conductor on a substrate, depositing a second layer on the first layer, the second layer comprising between about 1 nm and about 25 nm of a metal chalcogenide, and forming a third layer operable as an absorber layer on the second layer. The absorber layer can comprise a photoactive semiconductor layer. In some embodiments, the absorber layer comprises a chalcogenide of copper-indium-gallium. In some embodiments, the absorber layer comprises a chalcogenide of copper-zinc-tin. In some embodiments, the absorber layer comprises CdTe. In some embodiments, the metal comprises Mo, W or Ta. In some embodiments, the metal comprises Mo. In some embodiments, the chalcogenide comprises S or Se or a combination thereof. | 06-25-2015 |
Patent application number | Description | Published |
20090277587 | FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES - Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel. | 11-12-2009 |
20090280650 | FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES - Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer. | 11-12-2009 |
20100098882 | PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS - Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box. | 04-22-2010 |
20110011338 | FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures. | 01-20-2011 |
20110045676 | REMOTE PLASMA SOURCE SEASONING - Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition. | 02-24-2011 |
20120073501 | PROCESS CHAMBER FOR DIELECTRIC GAPFILL - A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber. | 03-29-2012 |
20120180954 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 07-19-2012 |
20130034666 | INDUCTIVE PLASMA SOURCES FOR WAFER PROCESSING AND CHAMBER CLEANING - Methods and systems for depositing material on a substrate are described. One method may include providing a processing chamber partitioned into a first plasma region and a second plasma region. The method may further include delivering the substrate to the processing chamber, where the substrate may occupy a portion of the second plasma region. The method may additionally include forming a first plasma in the first plasma region, where the first plasma may not directly contact the substrate, and the first plasma may be formed by activation of at least one shaped radio frequency (“RF”) coil above the first plasma region. The method may moreover include depositing the material on the substrate to form a layer, where one or more reactants excited by the first plasma may be used in deposition of the material. | 02-07-2013 |
20130082197 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 04-04-2013 |
20130153148 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 06-20-2013 |
20140083362 | PROCESS CHAMBER FOR DIELECTRIC GAPFILL - A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber. | 03-27-2014 |
20140097270 | CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT - Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. | 04-10-2014 |
20140261168 | MULTIPLE CHAMBER MODULE AND PLATFORM IN SEMICONDUCTOR PROCESS EQUIPMENT - Embodiments of the present invention generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool having four to six process chambers connected to a transfer chamber and each process chamber may simultaneously process two or three substrates. | 09-18-2014 |
20150013793 | FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures. | 01-15-2015 |
20150047786 | SEALING GROOVE METHODS FOR SEMICONDUCTOR EQUIPMENT - In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile. | 02-19-2015 |