Patent application number | Description | Published |
20080210163 | Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems - A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source. | 09-04-2008 |
20090272719 | SYSTEM AND METHOD FOR PEDESTAL ADJUSTMENT - A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal. | 11-05-2009 |
20090276097 | NON-CONTACT SUBSTRATE SUPPORT POSITION SENSING SYSTEM AND CORRESPONDING ADJUSTMENTS - A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light. | 11-05-2009 |
20100075488 | CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM - An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones. | 03-25-2010 |
20100086784 | METHODS AND APPARATUS FOR IMPROVED AZIMUTHAL THERMAL UNIFORMITY OF A SUBSTRATE - Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate. | 04-08-2010 |
20100120259 | METHOD AND APPARATUS TO ENHANCE PROCESS GAS TEMPERATURE IN A CVD REACTOR - Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough. | 05-13-2010 |
20100124248 | PYROMETRY FOR SUBSTRATE PROCESSING - A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength. | 05-20-2010 |
20110259432 | INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS - A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber. | 10-27-2011 |
20120201267 | LOW TEMPERATURE MEASUREMENT AND CONTROL USING LOW TEMPERATURE PYROMETRY - Embodiments of the present invention generally relate to methods and apparatus for measuring, calibrating, and controlling substrate temperature during low temperature and high temperature processing. In one embodiment, the method includes epitaxially forming a layer stack on a substrate placed on a support plate, measuring a temperature of the substrate with a first pyrometer disposed over the substrate, measuring a temperature of the support plate with a second pyrometer disposed below the support plate, calibrating the first pyrometer at multiple temperature points based on actual temperature readings of the substrate to generate a first set of calibrated temperature readings associated with the substrate, calibrating the second pyrometer using the set of calibrated temperature readings as a reference to generate a second set of calibrated temperature readings associated with the support plate, and controlling a power supplied to a heat source configured to heat the substrate based on the second set of calibrated temperature readings. | 08-09-2012 |
20130152859 | SYSTEM AND METHOD FOR PEDESTAL ADJUSTMENT - A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal. | 06-20-2013 |
20140175054 | INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS - In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums. | 06-26-2014 |
20140199056 | QUARTZ UPPER AND LOWER DOMES - Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange. | 07-17-2014 |
20140345525 | COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER - Embodiments disclosed herein relate to coated liner assemblies for use in a semiconductor processing chamber. In one embodiment, a liner assembly for use in a semiconductor processing chamber includes a liner body having a cylindrical ring form and a coating layer coating the liner body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. In another embodiment, an apparatus for depositing a dielectric layer on a substrate includes a processing chamber having an interior volume defined in a chamber body of the processing chamber, a liner assembly disposed in the processing chamber, wherein the liner assembly further comprises a liner body having a cylindrical ring form, and a coating layer coating an outer wall of the liner body and facing the chamber body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. | 11-27-2014 |
20140345526 | COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER - Embodiments disclosed herein relate to coated liner assemblies for use in a semiconductor processing chamber. In one embodiment, a liner assembly for use in a semiconductor processing chamber includes a liner body having a cylindrical ring form and a coating layer coating the liner body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. In another embodiment, an apparatus for depositing a dielectric layer on a substrate includes a processing chamber having an interior volume defined in a chamber body of the processing chamber, a liner assembly disposed in the processing chamber, wherein the liner assembly further comprises a liner body having a cylindrical ring form, and a coating layer coating an outer wall of the liner body and facing the chamber body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. | 11-27-2014 |
20140376898 | ABSORBING REFLECTOR FOR SEMICONDUCTOR PROCESSING CHAMBER - Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support. | 12-25-2014 |
20150023385 | MODEL BASED LAMP BACKGROUND FILTRATION OF STRAY RADIATION FOR PYROMETRY - The embodiments described herein generally relate to methods of noise compensation for proper temperature detection in thermal processing chambers and devices for achieving the same. Methods can include determining noise produced by a lamp zone and extrapolating the noise from the detected photocurrent. Devices can include a processing chamber, a substrate support disposed in the processing chamber, the substrate support having a high thermal mass, a pyrometer below the substrate support and oriented to view radiation emitted by the substrate and a controller configured to subtract a time invariant noise component and a time variant noise component from the pyrometer signal. | 01-22-2015 |