Patent application number | Description | Published |
20100086975 | METHOD AND APPARATUS FOR AMPLIFICATION OF NUCLEIC ACID SEQUENCES USING IMMOBILIZED DNA POLYMERASE - The present invention generally relates to methods and apparatuses for amplifying nucleic acid sequences using immobilized DNA polymerase. More particularly, it relates to methods and apparatuses useful for amplifying target nucleic acid sequences by forming a plurality of reaction regions in which polymerase chain reaction (PCR) can occur, positioning immobilized DNA polymerase in a specific reaction region, and circulating DNA through the reaction regions. The present invention provides those methods and apparatuses that allow simple separation and recovery of the DNA polymerase after the amplification, that can be operated not only with thermostable DNA polymerases but also with non-thermostable DNA polymerases, and that are simpler in their designs and processes so that they can be readily integrated into complex devices such as Lab-on-a-chip. | 04-08-2010 |
20100285536 | METHOD AND APPARATUS FOR AMPLIFICATION OF NUCLEIC ACID SEQUENCES BY USING THERMAL CONVECTION - The present invention provides a nucleic acid sequence amplification method and apparatuses thereof that are simple in the design and easy to miniaturize and integrate into complex apparatuses, with capability of using DNA polymerases that are not thermostable. In the present invention, a plurality of heat sources are combined to supply or remove heat from specific regions of the sample such that a specific spatial temperature distribution is maintained inside the sample by locating a relatively high temperature region lower in height than a relatively low temperature region. | 11-11-2010 |
20120021463 | METHOD AND APPARATUS FOR AMPLIFICATION OF NUCLEIC ACID SEQUENCES BY USING THERMAL CONVECTION - The present invention provides a nucleic acid sequence amplification method and apparatuses thereof that are simple in the design and easy to miniaturize and integrate into complex apparatuses, with capability of using DNA polymerases that are not thermostable. In the present invention, a plurality of heat sources are combined to supply or remove heat from specific regions of the sample such that a specific spatial temperature distribution is maintained inside the sample by locating a relatively high temperature region lower in height than a relatively low temperature region. | 01-26-2012 |
20140170707 | METHOD AND APPARATUS FOR AMPLIFICATION OF NUCLEIC ACID SEQUENCES BY USING THERMAL CONVECTION - The present invention provides a nucleic acid sequence amplification method and apparatuses thereof that are simple in the design and easy to miniaturize and integrate into complex apparatuses, with capability of using DNA polymerases that are not thermostable. In the present invention, a plurality of heat sources are combined to supply or remove heat from specific regions of the sample such that a specific spatial temperature distribution is maintained inside the sample by locating a relatively high temperature region lower in height than a relatively low temperature region. | 06-19-2014 |
Patent application number | Description | Published |
20080237566 | Phase change memory device and method of fabricating the same - A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane | 10-02-2008 |
20090057644 | Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices - A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics. | 03-05-2009 |
20090243117 | CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME - A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern. | 10-01-2009 |
20100144135 | Method of manufacturing a phase changeable memory unit - A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer. | 06-10-2010 |
20100176365 | RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench | 07-15-2010 |
20110155985 | PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE - A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material. | 06-30-2011 |
20110300684 | METHOD FABRICATING PHASE-CHANGE SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole. | 12-08-2011 |
20110312126 | METHOD FABRICATING A PHASE-CHANGE SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a phase-change semiconductor memory device includes a plasma treatment of an electrode connected to a phase-change material pattern after a conductive layer used to form the electrode has been planarized in the presence of an oxidizing agent. The plasma is formed from a plasma gas having a molecular weight of 17 or less. | 12-22-2011 |
20120142141 | METHOD OF FORMING RESISTANCE VARIABLE MEMORY DEVICE - A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film. | 06-07-2012 |
20120149165 | METHOD OF MANUFACTURING VARIABLE RESISTANCE MEMORY DEVICE - An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern. | 06-14-2012 |
20130017663 | METHOD OF FORMING A PHASE CHANGE MATERIAL LAYER PATTERN AND METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICEAANM PARK; JEONG-HEEAACI HWASEONG-SIAACO KRAAGP PARK; JEONG-HEE HWASEONG-SI KRAANM PARK; SOON-OHAACI SUWON-SIAACO KRAAGP PARK; SOON-OH SUWON-SI KRAANM PARK; JUNG-HWANAACI SEOULAACO KRAAGP PARK; JUNG-HWAN SEOUL KRAANM OH; JIN-HOAACI SEONGNAM-SOAACO KRAAGP OH; JIN-HO SEONGNAM-SO KR - A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening. | 01-17-2013 |
20130143380 | METHODS OF FORMING A PHASE CHANGE LAYER AND METHODS OF FABRICATING A PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME - A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material. | 06-06-2013 |
20150325787 | METHOD OF FILLING AN OPENING AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME - Example methods of filling an opening and of manufacturing a phase change memory device are disclosed. In an example method, an insulation layer having an opening is formed on a substrate. A material layer is formed on the insulation layer. The material layer fills the opening, and has a void. A first laser beam is irradiated onto the material layer, thereby removing the void or reducing a size of the void. The first laser beam is generated from a solid state laser medium. | 11-12-2015 |
20150364678 | METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE - In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns. | 12-17-2015 |
20160102396 | PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF DEPOSITING PHASE-CHANGE MATERIALS USING THE SAME - A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate. | 04-14-2016 |
Patent application number | Description | Published |
20110114990 | LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS FOR CURRENT SPREADING - An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts. | 05-19-2011 |
20110140160 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 06-16-2011 |
20110156086 | LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS - An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension. | 06-30-2011 |
20130134867 | LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer. | 05-30-2013 |
20140209963 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section. | 07-31-2014 |
20140299905 | LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY - A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses. | 10-09-2014 |
20150179879 | LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer. | 06-25-2015 |
Patent application number | Description | Published |
20090062949 | AUDIO DATA PLAYER AND METHOD OF CREATING PLAYBACK LIST THEREOF - An audio data player may include a storage unit for storing one of more sound source files containing tag information, and an extraction unit for extracting one piece of information among the tag information (e.g., information on artist, album, title, year, genre, and user preference) of the stored sound source files. A control unit may provide the tag information of each sound source file extracted by the extraction unit in the form of a list, receiving one element of the provided list, and create a playback list. | 03-05-2009 |
20090085874 | TOUCH SCREEN DEVICE AND CHARACTER INPUT METHOD THEREIN - A device, computer program product and method of inputting a character in a touch screen device, in which a touch area is partitioned into a plurality of array positions, and one or more letters are assigned to each of the partitioned array positions. The method comprises the steps of: partitioning a touch area of the touch panel into a plurality of array positions and assigning one or more characters to each of the partitioned array positions; sensing an expansion event of selecting one among the array positions; dividing the touch area into a plurality of selection positions and assigning the characters assigned to the array position selected by the expansion event to the respective selection positions; sensing a selection event of selecting one among the selection positions; and recognizing the character assigned to the selection position selected by the selection event as an input character. | 04-02-2009 |
20150074587 | TOUCH SCREEN DEVICE AND CHARACTER INPUT METHOD THEREOF - A method of controlling a mobile terminal, and which includes displaying a touch keypad on a touch screen of the mobile terminal, the touch keypad including character input regions, at least one specific character input region including a first character symbol and a second character symbol; displaying an output window above the touch keypad, the output window displaying character symbols touched on the character input regions; receiving a touch selection signal indicating a touch selection of the specific character input region; as long as the received touch selection signal is received, displaying the keypad and a new character input region with the second character symbol being displayed larger than the second character symbol displayed in the specific character input region; and displaying the second character symbol in the output window when the touch selection is released from the new character input region. | 03-12-2015 |
Patent application number | Description | Published |
20090031520 | Upright vacuum cleaner - A vacuum cleaner including a sterilizing unit is provided. The sterilizing unit includes a hot air circulating duct and an air passage switching part. The hot air circulating duct is disposed between a motor chamber and an air inflow part of the dust separating unit to guide air from the motor chamber to the air inflow part of the dust separating unit. The air passage switching part is disposed at a place where the air inflow part, the suction hose and the hot air circulating duct intersect. The air passage switching part is movable between a cleaning position and a sterilizing position to switch a flow of air, the cleaning position being a position that blocks off between the air inflow part and the hot air circulating duct and the sterilizing position being a position that blocks off between the air inflow part and the suction hose. | 02-05-2009 |
20090044371 | Vacuum cleaner for use in both upright form and canister form - A vacuum cleaner for use in both an upright form and a canister form, which can mount and dismount a cleaner body to and from a suction nozzle assembly is disclosed. The vacuum cleaner includes a suction nozzle assembly to draw in dust or dirt along with air while moving along a surface to be cleaned; a cleaner body having a dust separating unit to separate and collect the dust or dirt from the air drawn in from the surface to be cleaned; a supporting unit hingedly joined to the suction nozzle assembly to support a lower part of the cleaner body to communicate with the suction nozzle assembly; and a locking unit to detachably lock the lower part of the cleaner body to the supporting unit. | 02-19-2009 |
20100071152 | Vacuum cleaner - A vacuum cleaner is provided that includes a cleaner body; a dust separating apparatus fixed to the cleaner body; a first dust receptacle detachably attached to the cleaner body on a bottom portion of the dust separating apparatus to collect large particle dust; a second dust receptacle detachably attached to the cleaner body on a bottom portion of the first dust receptacle to collect fine particle dust; and a locking device having a first position in which the dust separating apparatus is closely contacted to the first and second dust receptacles, and a second position in which the dust separating apparatus is spaced apart from the first and second dust receptacles at a predetermined interval. The second dust receptacle is detached from the first dust receptacle at the second position, and is detached from the cleaner body after the first dust receptacle is disengaged from the cleaner body. | 03-25-2010 |
20100281648 | VACUUM CLEANER HAVING DUAL LOCKING STRUCTURE - A vacuum cleaner having a dual locking structure is provided. The vacuum cleaner includes a brush assembly, a main body connected to the brush assembly, a dust bin arranged on the main body, a fastening unit to move the dust bin to a fastened or unfastened state, and a filter casing. The dust bin includes one or more first locking holes and the main body includes one or dust bin locking members to be engaged with the first locking holes so that the dust bin, in an unfastened state, is removably retained in the main body. The filter casing includes one or more filter casing locking portions and the main body includes one or more filter casing locking members to be engaged with the filter casing locking portions so that the filter casing in the unfastened state is removably retained in the main body. | 11-11-2010 |
20100313378 | UPRIGHT-TYPE VACUUM CLEANER - An upright-type vacuum cleaner is provided. The upright-type vacuum cleaner includes a cleaner body comprising a motor chamber in which a suction motor is mounted, a brush assembly connected to the cleaner body, a discharge filter unit mounted on a first surface of the cleaner body, to filter out impurities from an air stream discharged from the suction motor, and a cord reel assembly mounted on a second surface of the cleaner body and having a power cord. The discharge filter unit includes a filter member mountable and demountable to and from the cleaner body by a user outside the vacuum cleaner, and at least a part of an air stream filtered by the filter member shifts a direction to pass through the cord reel assembly. | 12-16-2010 |
Patent application number | Description | Published |
20100148660 | Plasma display panel - A plasma display panel that includes a first substrate and a second substrate facing each other, a plurality of address electrodes disposed on the first substrate, a plurality of display electrodes disposed on one side of the second substrate facing the first substrate in a direction crossing the address electrodes, and red, green, and blue phosphor layers disposed in a discharge space between the first and second substrates. The green phosphor layer includes a green phosphor and an inorganic pigment absorbing a wavelength of about 580 nm to about 640 nm. The plasma display panel includes a green phosphor layer having a reduced decay time and good color purity characteristics, as well as excellent luminance, discharge, and life-span characteristics. | 06-17-2010 |
20140158982 | LIGHT-EMITTING DEVICE, BACKLIGHT UNIT, DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - A light emitting device may include: a light emitting unit; a wavelength conversion unit disposed in a path of light emitted from the light emitting unit and converting a wavelength of light emitted from the light emitting unit; and a light transmission unit formed on at least one side of the wavelength conversion unit. The wavelength conversion unit may include a first quantum dot converting a wavelength of light into red light and a second quantum dot converting a wavelength of light into green light, and the patterns of first quantum dot and second quantum dot are alternately disposed repeatedly at least one or more times. | 06-12-2014 |
Patent application number | Description | Published |
20090035514 | Phase change memory device and method of fabricating the same - A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening. | 02-05-2009 |
20110031461 | PHASE CHANGE MEMORY DEVICE - A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening. | 02-10-2011 |
Patent application number | Description | Published |
20090004773 | METHODS OF FABRICATING MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES - A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed. | 01-01-2009 |
20090250682 | PHASE CHANGE MEMORY DEVICE - Provided is a phase change memory device. The phase change memory device includes a first electrode and a second electrode. A phase change material pattern is interposed between the first and second electrodes. A phase change auxiliary pattern is in contact with at least one side of the phase change material pattern. The phase change auxiliary pattern includes a compound having a chemical formula expressed as D | 10-08-2009 |
20100019216 | MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES - A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed. | 01-28-2010 |
20120068136 | Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof - Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other. | 03-22-2012 |