Patent application number | Description | Published |
20090029286 | Method for Fabricating Photoresist Pattern - Disclosed is a method for fabricating a photoresist pattern. The method includes coating photoresist on an etch target layer, forming an initial photoresist pattern through an exposure process using a mask, and growing the initial photoresist pattern to form a final photoresist pattern by using an application of a photoresist material including a reactive organic material. | 01-29-2009 |
20090114960 | Image Sensor and a Method for Manufacturing the Same - An image sensor and method for manufacturing the same are provided. According to an embodiment, the image sensor includes a photodiode on a semiconductor substrate according to unit pixels; an insulating layer arranged on the semiconductor substrate; and an inter metal dielectric (IMD) including metal wirings arranged on the insulating layer. A trench is provided through the IMD in a region corresponding to the photodiode for each unit pixel; and a color filter is arranged filling the trench. The color filter can function as a wave guide to improve the photosensitivity of the image sensor. | 05-07-2009 |
20090127599 | Image Sensor and Method of Manufacturing the Same - Provided is an image sensor. The image sensor includes a semiconductor substrate, an interlayer dielectric, metal interconnections, a first electrode, a lower electrode, a second electrode, and a photodiode. The semiconductor substrate has at least one transistor thereon. The interlayer dielectric is on the semiconductor substrate. The metal interconnections pass through the interlayer dielectric. The first electrode is in the interlayer dielectric between the metal interconnections. The lower electrode is on the interlayer dielectric to connect to the metal interconnection. The second electrode is on the interlayer dielectric at a position corresponding to the first electrode, and a gap region is between the second electrode and the lower electrode. The photodiode is on the interlayer dielectric with the lower electrode and the second electrode. | 05-21-2009 |
20090162757 | PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to a phase shift mask and a method for manufacturing the same. According to embodiments, a phase shift mask may include a substrate, a phase shift layer disposed on and/or over an area of the substrate corresponding to a pattern to be exposed, and a dummy phase shift layer disposed on and/or over an area of the substrate where a phase shift layer may not be formed. According to embodiments, a side lobe phenomenon may be minimized. | 06-25-2009 |
20100055900 | MASK AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes a first mask region having a dark tone for light shading, a second mask region having a half tone, being disposed within the first mask region to form the metal line, and a third mask region having a clear tone, being disposed within the second mask region to form the via contact. | 03-04-2010 |
20100166311 | DIGITAL IMAGE PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME - A digital image processing apparatus and a method of controlling the digital image processing apparatus are provided. The digital image processing apparatus, and associated method, may display on-screen display (OSD) regions which do not overlap a face zone display box after determining whether the face zone display box and the OSD regions overlap each other. | 07-01-2010 |
20100311241 | THREE-STATE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A three-state mask, which is used during exposure of a lithography process and formed in a regular pattern, includes a first transmission region to transmit substantially all incident light, second transmission regions to transmit a portion of incident light, and shield regions to block transmission of light. Therefore, the three-state mask shortens two lithography processes into one lithography process, eliminates misalignment between a via hole and a trench, prevents lowering of a sheet resistance (R | 12-09-2010 |
20130176472 | DIGITAL PHOTOGRAPHING APPARATUS AND METHOD OF CONTROLLING THE SAME - A digital photographing apparatus is provided that enlarges and displays one area of a subject to be photographed for a self-timer photographing standby time, as is a method of controlling the digital photographing apparatus. The method includes: receiving a self-timer photographing input signal; enlarging and displaying one area of a displayed input image for a self-timer photographing standby time; and capturing the displayed input image after the self-timer photographing standby time elapses. The area of the subject to be photographed is enlarged and displayed for the self-timer photographing standby time so that a photographing state of the subject to be photographed may be checked and a desired image may be captured. | 07-11-2013 |