Patent application number | Description | Published |
20090288640 | FUEL INJECTION VALVE - The objective of the present invention is to realize the structure, of a fuel injection valve, in which bouncing of the needle can be suppressed and the armature position can be fixed while the valve is closed, without increasing the number of components and the number of processes. In a fuel injection valve including an armature that is repelled or attracted by a core, by de-energizing or energizing a coil, a needle that opens or closes a valve seat in accordance with a reciprocal travel of the armature, and a valve-closing spring that biases the needle so as to close the valve, when the coil is de-energized, the valve-closing spring is disposed on the armature, and the needle and the armature are fixed in such a way that the armature can travel in an axis direction by a predetermined amount with respect to the needle. | 11-26-2009 |
20090289131 | FUEL INJECTION VALVE - The objective of the present invention is to realize the structure, of a fuel injection valve, in which bouncing of the needle can be suppressed and the armature position can be fixed while the valve is closed, without increasing the number of components and the number of processes. In a fuel injection valve including an armature that is repelled or attracted by a core, by de-energizing or energizing a coil; a needle that opens or closes a valve seat in accordance with a reciprocal travel of the armature; and a valve-closing spring that biases the needle so as to close the valve, when the coil is de-energized, the needle and the armature are fixed in such a way that the armature can travel in an axis direction by a predetermined amount with respect to the needle, and the coil is preliminarily energized while the fuel injection valve is closed by the needle. | 11-26-2009 |
20150069152 | ELECTROMAGNETIC FUEL INJECTION VALVE - An object of the present invention is to prevent a short circuit and disconnection between coil wires | 03-12-2015 |
Patent application number | Description | Published |
20080222233 | INFORMATION SHARING SUPPORT SYSTEM, INFORMATION PROCESSING DEVICE, COMPUTER READABLE RECORDING MEDIUM, AND COMPUTER CONTROLLING METHOD - An information sharing support system includes: a first information processing device connected to a projector device for projecting an image on a projection area including an object therein, and to an image pick-up device for picking up an image of the projection area including the object; an inputting unit that inputs an event in a first layer, inputs a second annotation image as a part of a first annotation image associated with the event to a second layer, inputs a third annotation image as the remaining part of the first annotation image to a third layer, and inputs a document to a fourth layer; a transmitting unit that transmits the second annotation image to the projector device; a receiving unit that receives a picked-up image from the image pick-up device; and a second information processing device that allocates the picked-up image to the second layer, and includes a display that displays the third annotation image and the document in an overlapping fashion. | 09-11-2008 |
20080259184 | INFORMATION PROCESSING DEVICE AND COMPUTER READABLE RECORDING MEDIUM - An information processing device that is connected to a projecting device that projects an annotation image input from an external terminal a projection area including an object and a background, and is connected to an image capture device that captures an image of the projection area including the object and the background, includes: a detecting unit that detects movement of the object from an image captured by the image capture device; an extracting unit that extracts a changed region that is caused in the captured image by the movement of the object; and a processing unit that performs processing on at least one of the captured image and the annotation image, when the annotation image exists in the changed region. | 10-23-2008 |
20080297624 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING SYSTEM, COMPUTER READABLE MEDIUM, AND IMAGE PROCESSING METHOD - An image processing apparatus includes a memory that memorizes a plurality of pickup images in which an object has been picked up by varying an irradiation direction of a light; an extracting portion that extracts an area image of an area indicated by a user from each of the pickup images memorized in the memory; a calculating portion that calculates at least one illumination parameter for each area image by one of calculating an amount of edges from each extracted area image, executing a clustering process to brightness of each extracted area image, and executing a totaling process of totaling differences in brightness between the extracted area images; and a generating portion that generates at least one synthetic image by synthesizing the extracted area images with the at least one illumination parameter. | 12-04-2008 |
20090046060 | INDICATOR SYSTEM, COMPUTER READABLE RECORDING MEDIUM, AND INDICATING DEVICE - An indicator system includes: a controller that transmits, to a terminal, an image in an image capture region that is captured by an image capture unit and includes an object, projects an annotation image relating to the image in the image capture region onto a projecting unit, and switches on and off a power source of the projecting unit in accordance with an instruction with respect to drawing the annotation image. | 02-19-2009 |
20090059015 | INFORMATION PROCESSING DEVICE AND REMOTE COMMUNICATING SYSTEM - An information processing device is connected to an overview image capturing device that captures an overview image of an object and an enlarged image capturing device that captures an enlarged image of the object, and is connected to a remote control device that remote-controls at least the enlarged image capturing device. The information processing device includes: an encoding unit that encodes the overview image and the enlarged image; a transmitting unit that transmits the images encoded by the encoding unit to the remote control device; and a switching unit that switches an encoding method to be utilized by the encoding unit and a transmission method to be utilized by the transmitting unit among a first mode, a second mode, and a third mode. When there is not a continuous change in the overview image captured by the overview image capturing device, the overview image is transmitted in the first mode. When there is a continuous change in the overview image, the overview image is transmitted in the second mode. The enlarged image captured by the enlarged image capturing device is transmitted in the third mode. | 03-05-2009 |
20110248995 | SYSTEM AND METHODS FOR CREATING INTERACTIVE VIRTUAL CONTENT BASED ON MACHINE ANALYSIS OF FREEFORM PHYSICAL MARKUP - Systems and methods are described for creating virtual models, primarily through actions taken in actual 3D physical space. For many applications, such systems are more natural to users and may provide a greater sense of reality than can be achieved by editing a virtual model at a computer display, which requires the use of manipulations of a 2D display to effect 3D changes. Actions are taken (markup is drawn or laid out, etc.) in a physical workspace. Such physical workspaces may in fact be identical to the space being modeled, small physical scale models of the space, or even a whiteboard or set of papers or objects which get mapped onto the space being modeled. | 10-13-2011 |
20110279697 | AR NAVIGATION FOR REPEAT PHOTOGRAPHY AND DIFFERENCE EXTRACTION - Systems and methods for repeat photography and difference extraction that help users take pictures from the same position and camera angle as earlier photos. The system automatically extracts differences between the photos. Camera poses are estimated and then indicators are rendered to show the desired camera angle, which guide the user to the same camera angle for repeat photography. Using 3D rendering techniques, photos are virtually projected onto a 3D model to adjust them and improve the match between the photos, and the difference between the two photos are detected and highlighted. Highlighting the detected differences helps users to notice the differences. | 11-17-2011 |
20110298703 | INFORMATION PROCESSING DEVICE AND COMPUTER READABLE RECORDING MEDIUM - An information processing device that is connected to a projecting device that projects an annotation image input from an external, terminal a projection area including an object and a background, and is connected to an image capture device that captures an image of the projection area including the object and the background, includes: a detecting unit that detects movement of the object from an image captured by the image capture device; an extracting unit that extracts a changed region that is caused in the captured image by the movement of the object; and a processing unit that performs processing on at least one of the captured image and the annotation image, when the annotation image exists in the changed region. | 12-08-2011 |
20110310122 | Remote instruction system, remote instruction method, and program product therefor - A remote instruction system includes an attention image outputting portion that projects an annotation image and an attention image from a projecting portion onto a captured area of an image capturing portion that captures an image of an object, the annotation image being created on the basis of the image captured, the attention image being provided for attracting attention to the annotation image. | 12-22-2011 |
20120008000 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING SYSTEM, COMPUTER READABLE MEDIUM, AND IMAGE PROCESSING METHOD - An image processing apparatus includes a memory that memorizes a plurality of pickup images in which an object has been picked up by varying an irradiation direction of a light; an extracting portion that extracts an area image of an area indicated by a user from each of the pickup images memorized in the memory; a calculating portion that calculates at least one illumination parameter for each area image by one of calculating an amount of edges from each extracted area image, executing a clustering process to brightness of each extracted area image, and executing a totaling process of totaling differences in brightness between the extracted area images; and a generating portion that generates at least one synthetic image by synthesizing the extracted area images with the at least one illumination parameter. | 01-12-2012 |
20120324330 | INFORMATION SHARING SUPPORT SYSTEM, INFORMATION PROCESSING DEVICE, COMPUTER READABLE RECORDING MEDIUM, AND COMPUTER CONTROLLING METHOD - An information sharing support system includes a first information processor connected to a projector that projects an image on a projection area including an object, and to an image pick-up device for picking up an image of the projection area; an inputting unit that inputs an event in a first layer, inputs a second annotation image as a part of a first annotation image associated with the event to a second layer, inputs a third annotation image to a third layer, and inputs a document to a fourth layer; a transmitter that transmits the second annotation image to the projector device; a receiving unit that receives a picked-up image; and a second information processing device that allocates the picked-up image to the second layer, and includes a display that displays the third annotation image and the document in an overlapping fashion. | 12-20-2012 |
20130251334 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM STORING INFORMATION PROCESSING PROGRAM - An information processing apparatus includes a sound recognition unit that recognizes a sound of a moving image including a captured document, a detecting unit that detects a word which appears in both a recognition result of the sound recognition unit and a word extracted from the captured document in the moving image, an extracting unit that extracts an occurrence time of the word detected by the detecting unit in the moving image and a position of the word in the document, a display unit that displays the word extracted by the extracting unit on the document in a different manner from that in which another word is displayed, a designating unit that designates the word displayed by the display unit on the basis of an operation of an operator, and a reproducing unit that reproduces the moving image from the occurrence time of the word designated by the designating unit. | 09-26-2013 |
Patent application number | Description | Published |
20110241101 | SEMICONDUCTOR MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO | 10-06-2011 |
20130234222 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a substrate, a structure body, a semiconductor layer, and a memory film. The memory film is provided between the semiconductor layer and the plurality of electrode films. The memory film includes a charge storage film, a block film, and a tunnel film. The block film is provided between the charge storage film and the plurality of electrode films. The tunnel film is provided between the charge storage film and the semiconductor layer. The tunnel film includes a first film containing silicon oxide, a second film containing silicon oxide, and a third film provided between the first film and the second film and containing silicon oxynitride. When a composition of the silicon oxynitride contained in the third film is expressed by a ratio x of silicon oxide and a ratio (1−x) of silicon nitride, 0.5≦x<1 holdes. | 09-12-2013 |
20150069489 | NON-VOLATILE STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body. | 03-12-2015 |
Patent application number | Description | Published |
20130134372 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers. | 05-30-2013 |
20130200450 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a fin structure stacked in order of a first oxide layer, a semiconductor layer and a second oxide layer in a first direction perpendicular to a surface of the semiconductor substrate, the fin structure extending in a second direction parallel to the surface of the semiconductor substrate, and a gate structure stacked in order of a gate oxide layer, a charge storage layer, a block insulating layer and a control gate electrode in a third direction perpendicular to the first and second directions from a surface of the semiconductor layer in the third direction. | 08-08-2013 |
20150200307 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films. | 07-16-2015 |
20150255482 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than | 09-10-2015 |
Patent application number | Description | Published |
20150263034 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor memory device includes a stacked body having a plurality of electrode layers containing boron and silicon, and a plurality of insulating layers each provided between the electrode layers; a channel body penetrating through the stacked body; and a memory film provided between the channel body and each of the electrode layer. The memory film includes a tunnel film, a charge storage film, and a block film, provided in order from the channel body side. The block film includes a silicon nitride film, and a first silicon oxide film provided between the silicon nitride film and the electrode layer and being in contact with the electrode layer. | 09-17-2015 |
20150263126 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a plurality of electrode films, a semiconductor pillar, a tunnel insulating film, a charge storage film, and a block insulating film. The plurality of electrode films are arranged to be separated each other along a first direction. The block insulating film includes a silicon oxide layer, and a high dielectric constant layer made of high dielectric constant material having a dielectric constant higher than a dielectric constant of silicon oxide. The high dielectric constant layer has a first portion and a second portion. The first portion is disposed between the semiconductor pillar and a space between the electrode films. The second portion is disposed between the semiconductor pillar and the electrode films. In a direction perpendicular to the first direction, a thickness of the first portion is thinner than a thickness of the second portion. | 09-17-2015 |
20160064408 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to an embodiment, a nonvolatile semiconductor memory device comprises: a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer; a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting a side surface of the tunnel insulating layer; and a block insulating layer contacting a side surface of the charge accumulation layer. The inter-layer insulating layer comprises: a first silicon oxide layer; a first metal oxide layer; and a first silicon nitride layer. The first metal oxide layer is formed on a first surface facing the conductive layer, of the first silicon oxide layer. The first silicon nitride layer is formed on the first surface via the first metal oxide layer. | 03-03-2016 |
20160079269 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer. In addition, the nonvolatile semiconductor memory device comprises: a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting a side surface of the tunnel insulating layer; and a block insulating layer contacting a portion facing the conductive layer, of a side surface of the charge accumulation layer. Moreover, the portion facing the conductive layer, of the charge accumulation layer is thinner compared to a portion facing the inter-layer insulating layer, of the charge accumulation layer. | 03-17-2016 |
Patent application number | Description | Published |
20090242963 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - In a semiconductor device, the side walls are made of SiO | 10-01-2009 |
20100034023 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 02-11-2010 |
20100078704 | SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film. | 04-01-2010 |
20120025294 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device in which degradation of reliability originating in the interface between an upper insulating layer and an element isolation insulating layer is suppressed. The semiconductor device includes: a semiconductor region; a plurality of stacked structures each of which is disposed on the semiconductor region and has a tunnel insulating film, a charge storage layer, an upper insulating layer, and a control electrode stacked sequentially; an element isolation insulating layer disposed on side faces of the plurality of stacked structures; and a source-drain region disposed on the semiconductor region and among the plurality of stacked structures. The element isolation insulating layer includes at least one of SiO | 02-02-2012 |
20120025297 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a source region and a drain region provided on a surface area of a semiconductor region, a tunnel insulating film provided on a channel between the source region and the drain region, a charge storage layer provided on the tunnel insulating film, a first dielectric film provided on the charge storage layer and containing lanthanum aluminum silicon oxide or oxynitride, a second dielectric film provided on the first dielectric film and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and a rare earth metal, and a control gate electrode provided on the second dielectric film. | 02-02-2012 |
20120032248 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 02-09-2012 |
20120068250 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film. | 03-22-2012 |
20130010535 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 01-10-2013 |
20130343122 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 12-26-2013 |
20140001536 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT | 01-02-2014 |
20140021528 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor region; a plurality of stacked structures each of which is disposed on the semiconductor region and has a tunnel insulating film, a charge storage layer, an upper insulating layer, and a control electrode stacked sequentially; an element isolation insulating layer disposed on side faces of the plurality of stacked structures; and a source-drain region disposed on the semiconductor region and among the plurality of stacked structures. The element isolation insulating layer includes at least one of SiO | 01-23-2014 |
20150187792 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 07-02-2015 |
20150194520 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 07-09-2015 |
20160104802 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY, AND METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film. | 04-14-2016 |
Patent application number | Description | Published |
20080230835 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide an element structure of a semiconductor device for having a sufficient contact area between an electrode in contact with a source region or a drain region and the source region or the drain region, and a method for manufacturing the semiconductor device with the element structure. An upper electrode is formed over a high-concentration impurity region (the source region or the drain region). A contact hole passing through an interlayer insulating film is formed overlapping with a region where the upper electrode and the high-concentration impurity region are stacked. | 09-25-2008 |
20090029514 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region). | 01-29-2009 |
20090096024 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween. | 04-16-2009 |
20090098739 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate. | 04-16-2009 |
20100062583 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device in which, even when the semiconductor device is formed over an SOI substrate which uses a glass substrate, an insulating film and a semiconductor film over the glass substrate are not peeled by stress applied by a conductive film in formation of the conductive film for forming a gate electrode. A semiconductor device is manufactured by the steps of forming a first insulating film over a bond substrate, forming an embrittlement layer by adding ions from a surface of the bond substrate, bonding the bond substrate to a glass substrate with the first insulating film interposed therebetween, separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the first insulating film interposed therebetween, removing a peripheral region of the first insulating film and the semiconductor film to expose part of the glass substrate, forming a gate insulating film over and in contact with the semiconductor film and the glass substrate, and forming a stacked conductive film over and in contact with the gate insulating film, in which the stacked conductive film includes a conductive film having a tensile stress and a conductive film having a compressive stress. | 03-11-2010 |
20100075470 | METHOD OF MANUFACTURING SOI SUBSTRATE - After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment. | 03-25-2010 |