Patent application number | Description | Published |
20080283778 | Apparatus for ion beam fabrication - The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis. | 11-20-2008 |
20090071605 | Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor - Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device. | 03-19-2009 |
20090121158 | APPARATUS AND METHOD FOR SPECIMEN FABRICATION - A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed. | 05-14-2009 |
20090152462 | Gas field ionization ion source, scanning charged particle microscope, optical axis adjustment method and specimen observation method - It is an object of the present invention to improve the stability of a gas field ionization ion source. | 06-18-2009 |
20090173888 | Gas field ion source, charged particle microscope, and apparatus - A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature. | 07-09-2009 |
20090230299 | ION SOURCE, ION BEAM PROCESSING/OBSERVATION APPARATUS, CHARGED PARTICLE BEAM APPARATUS, AND METHOD FOR OBSERVING CROSS SECTION OF SAMPLE - An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve. | 09-17-2009 |
20100176297 | ION BEAM PROCESSING APPARATUS - An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction. | 07-15-2010 |
20110114476 | Method and apparatus for specimen fabrication - A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage. | 05-19-2011 |
20110147609 | ION BEAM DEVICE - An ion beam device according to the present invention includes a gas field ion source ( | 06-23-2011 |
20110204225 | ION Beam System and Machining Method - An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction. | 08-25-2011 |
20110266465 | ION BEAM DEVICE - Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip ( | 11-03-2011 |
20120097863 | ION MICROSCOPE - Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth. | 04-26-2012 |
20120119086 | GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS - A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature. | 05-17-2012 |
20120217391 | CHARGED PARTICLE MICROSCOPE - The charged particle beam microscope is configured of: a gas field ionization ion source ( | 08-30-2012 |
20120319003 | ION BEAM DEVICE - Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip ( | 12-20-2012 |
20130087704 | GAS FIELD IONIZATION ION SOURCE, SCANNING CHARGED PARTICLE MICROSCOPE, OPTICAL AXIS ADJUSTMENT METHOD AND SPECIMEN OBSERVATION METHOD - A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS. | 04-11-2013 |
20130119252 | GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME - To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more. | 05-16-2013 |
20130126731 | Charged Particle Microscope and Ion Microscope - In order to provide a safe and environmentally-friendly charged gas particle microscope that exhibits a superior ionized gas-utilization efficiency and economic efficiency, the gas field ion source of a charged particle microscope is equipped with a vacuum chamber in which are provided a vacuum chamber evacuation mechanism, an acicular emitter tip, an extraction electrode disposed facing the emitter tip, and a mechanism for supplying a gas to the vicinity of the emitter tip, and is configured so that the gas in the region around the tip of acicular ion emitter is ionized and extracted as an ion beam. Therein, the evacuation mechanism and the gas supply mechanism are connected, and a material for adhering the gas to be ionized is disposed between the evacuation mechanism and the gas supply mechanism. | 05-23-2013 |
20130284593 | ION SOURCE, ION BEAM PROCESSING/OBSERVATION APPARATUS, CHARGED PARTICLE BEAM APPARATUS, AND METHOD FOR OBSERVING CROSS SECTION OF SAMPLE - An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve. | 10-31-2013 |
20130320209 | ION BEAM PROCESSING APPARATUS - An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction. | 12-05-2013 |
20140299768 | ION SOURCE AND ION BEAM DEVICE USING SAME - Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament. | 10-09-2014 |
20140319370 | ION BEAM DEVICE - An ion beam device according to the present invention includes a gas field ion source ( | 10-30-2014 |
20150083930 | CHARGED PARTICLE MICROSCOPE - The ionized gas supplied to the emitter tip of a gas field ionization ion source is cooled and purified to enable supplying a reliable and stable ion beam. Impurities contained in the ionized gas destabilize the field ionization ion source. The invention is configured to include a first heat exchanger thermally connected to a part of the field ionization ion source, a cryocooler capable of cooling a second gas line and a cold head, the second gas line being connected to the first heat exchanger and circulating a refrigerant, and a second heat exchanger that cools the first and second gas lines and is connected to the cold head. | 03-26-2015 |