Patent application number | Description | Published |
20090029490 | Method of fabricating an electronic device - It has been found that for silicon integrated circuits having capacitor structures or other p-n junctions structure at a technology node of 32 nm or smaller, photovoltaic induced corrosion of copper in the metallization stack is a significant issue. Thus processing conditions or device configurations are employed that preclude such corrosion. In one embodiment photovoltaic induced corrosion is monitored to prevent completion of devices with corrosion defects. | 01-29-2009 |
20090059684 | Method and Apparatus for Storing Data in a Write-Once Non-Volatile Memory - An apparatus and method for forming a write-once non-volatile memory cell. A memory cell comprises a first and a second MOSFET, wherein the first MOSFET undergoes a process to modify the threshold voltage such that a modified threshold voltage represents a first stored logic value. By determining which one of the first and the second MOSFETS has an altered threshold voltage, the stored logic value is determinable. The threshold voltage of the first MOSFET is altered by supplying current through a MOSFET gate, causing a gate heating effect that results in a threshold voltage shift. | 03-05-2009 |
20090273012 | High Voltage Tolerant Metal-Oxide-Semiconductor Device - A method for increasing a voltage tolerance of a MOS device having a first capacitance value associated therewith is provided. The method includes the steps of: connecting at least a first capacitor in series with the MOS device, the first capacitor having a first capacitance value associated therewith, the first capacitor having a first terminal coupled to a gate of the MOS device and a second terminal adapted to receive a first signal; and adjusting a ratio of the first capacitance value and a second capacitance value associated with the MOS device such that a second signal present at the gate of the MOS device will be an attenuated version of the first signal. An amount of attenuation of the first signal is a function of the ratio of the first and second capacitance values. | 11-05-2009 |
20100061036 | INTERDIGITATED CAPACITORS - The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide optimum matching. According to the invention, the capacitor pairs are interdigitated in a manner that ensures that the plates of each pair occupy common area on the substrate. Structural anomalies due to process conditions are compensated in that a given anomaly affects both capacitors in the same way. Two of the capacitor plates, one in each pair, are formed of comb structures, with the fingers of the combs interdigitated. The other plates are formed using one or more plates interleaved between the interdigitated plates. | 03-11-2010 |
20100221893 | METHOD FOR SEPARATING A SEMICONDUCTOR WAFER INTO INDIVIDUAL SEMICONDUCTOR DIES USING AN IMPLANTED IMPURITY - Provided is a method for separating a semiconductor wafer into individual semiconductor dies. The method for separating the semiconductor wafer, among other steps, may include implanting an impurity into regions of a semiconductor wafer proximate junctions where semiconductor dies join one another, the impurity configured to disrupt bonds in the semiconductor wafer proximate the junctions and lead to weakened regions. The method for separating the semiconductor wafer may further include separating the semiconductor wafer having the impurity into individual semiconductor dies along the weakened regions. | 09-02-2010 |
20100270684 | CHIP IDENTIFICATION USING TOP METAL LAYER - An integrated circuit (IC) structure includes a semiconductor substrate having a plurality of memory bits including IC identification information and a plurality of alternating metal and via layers thereabove. The IC structure includes a bond pad layer formed over a top one of the metal layers. The bond pad layer includes a plurality of pins connected to respective ones of the plurality of memory bits through the metal and via layers, at least one first pad connected to a higher voltage power supply rail and at least one second pad is connected to a lower voltage power supply rail. The bond pad layer has a plurality of circuit segments therein that each connects a respective one of the plurality of pins to either the at least one first pad or the at least one second pad for programming the IC identification information into the memory bit corresponding to that pin. | 10-28-2010 |
20110022648 | Secure Random Number Generator - A random number generator circuit includes a first memory having multiple storage elements. Each of the storage elements has an initial state corresponding thereto when powered up by a voltage supply source applied to the first memory. The first memory is operative to generate a first signal including multiple bits indicative of the respective initial states of the storage elements. The random number generator circuit further includes an error correction circuit coupled to the first memory. The error correction circuit is operative to receive the first signal and to correct at least one bit in the first signal that is not repeatable upon successive applications of power to the first memory to thereby generate a second signal. The second signal is a random number that is repeatable upon successive applications of power to the first memory. | 01-27-2011 |
20110230032 | High Voltage Tolerant Metal-Oxide-Semiconductor Device - A method for increasing a voltage tolerance of a MOS device having a first capacitance value associated therewith is provided. The method includes the steps of: connecting at least a first capacitor in series with the MOS device, the first capacitor having a first capacitance value associated therewith, the first capacitor having a first terminal coupled to a gate of the MOS device and a second terminal adapted to receive a first signal; and adjusting a ratio of the first capacitance value and a second capacitance value associated with the MOS device such that a second signal present at the gate of the MOS device will be an attenuated version of the first signal. An amount of attenuation of the first signal is a function of the ratio of the first and second capacitance values. | 09-22-2011 |