Patent application number | Description | Published |
20100204810 | PLASMA PROCESSING APPARATUS, AND MAINTENANCE METHOD AND ASSEMBLING METHOD OF THE SAME - A plasma processing apparatus includes a processing chamber that converts a processing gas introduced from a gas supply source into plasma and performs plasma processing on a target object, an exhaust chamber that communicates with the inside of the processing chamber to exhaust a gas converted into plasma from the processing chamber, and a blocking cover that is provided in the exhaust chamber to block communication between the inside of the processing chamber and the inside of the exhaust chamber. | 08-12-2010 |
20100213171 | FOCUS RING HEATING METHOD, PLASMA ETCHING APPARATUS, AND PLASMA ETCHING METHOD - There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber. | 08-26-2010 |
20110094995 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna. | 04-28-2011 |
20110094996 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation. | 04-28-2011 |
20110094997 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; | 04-28-2011 |
20110104902 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil. | 05-05-2011 |
20110303362 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles. | 12-15-2011 |
Patent application number | Description | Published |
20090027541 | Solid State Imaging Device - A solid-state imaging device provided with a light receiving surface, in which plural unit pixels, each having a photoelectric transducer to convert light signals into electric signals, are two-dimensionally arranged; a microlens to focus a light beam, the microlens being arranged in each unit pixel corresponding to the photoelectric transducer; an aperture section, to allow the light beam to enter the photoelectric transducer, the aperture section being arranged in each unit pixel corresponding to the photoelectric transducer; a wiring layer, which comprises plural layers, and is formed between the photoelectric transducer and the microlens, wherein the plural unit pixels are arranged such that each of the photoelectric transducer is located axisymmetrically with a symmetrical axis of a first centerline passing through an approximate center of the light receiving surface. | 01-29-2009 |
20090303361 | SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes: a pixel portion in which at least one pixel with a photo-electric conversion element is arranged; an analog/digital converter comprising: a delay circuit in which delay elements are connected in multiple stages, the delay elements having a delay amount in accordance with a difference between an output voltage that is output from the pixel portion for every pixel and a predetermined reference voltage; and a decoder portion that, after detecting a number of circulations, in the delay circuit, of a pulse propagating in the delay circuit and a number of stages, of the delay elements connected in multiple stages, through which the pulse has propagated, outputs a digital signal based on the detected number of circulations and stages for each of the pixels; and a control circuit which controls the analog/digital converter so as to modify a number of bits of the digital signal that is output from the analog/digital converter, in accordance with on a preset shooting mode, in which the control circuit modifies a period where the pulse propagates in the delay circuit. | 12-10-2009 |
20100177238 | Imaging Device - Provided is an imaging device which simplifies an assembling adjustment so as to reduce the manufacturing time and cost, wherein second lens L | 07-15-2010 |
20100208354 | Method for Producing Wafer Lens Assembly and Method for Producing Wafer Lens - There is provided a method for producing a wafer lens assembly capable of adhering a wafer lens and a spacer surely. The wafer lens assembly includes a first substrate including plural optical members formed of a curable resin on at least one surface, a second substrate joined to the first substrate, and a stop member arranged between the first and second substrates. The first and second substrates are adhered with an adhesive made of a photo-curable resin. The method includes an adhesive applying step of applying the adhesive made of a photo-curable resin on a joining area, a stop-member forming step, and a photo-curing step of irradiating and hardening the adhesive applied in the adhesive applying step with light after the stop-member forming step. The stop member is formed so as not to prevent the light irradiated in the photo-curing step from reaching the adhesive. | 08-19-2010 |
20100214458 | Method for Manufacturing Imaging Device, Imaging Device and Portable Terminal - Provided are a manufacturing method for obtaining a low-cost imaging device, and the low-cost imaging device manufactured by such method. The method for manufacturing the imaging device is provided with a step of integrally forming a plurality of imaging devices by using a plurality of imaging optical systems for guiding photographing object light and a plurality of imaging elements for photoelectrically converting the photographing object light, and a step of dividing the integrally formed imaging devices by cutting into individual imaging devices. In the step of integrally forming the imaging devices, a shape for positioning the integrally formed imaging devices is formed. | 08-26-2010 |
20100315546 | Imaging Device and Manufacturing method therefor - There is provided an imaging device capable of easily shielding an imaging element. The imaging device comprises a conductive mirror frame, an element unit including an imaging element equipped with a photoelectric converter, and an imaging lens attached within the mirror frame and imaging a subject image on the photoelectric converter of the imaging element. The element unit has an exposed conductive member contactable to the mirror frame. | 12-16-2010 |
20110042840 | Method for Producing Molded Body or Wafer Lens - The present invention aims to improve shape precision of a molded body when a plurality of molded bodies, which are projections or recesses made of a curable resin, are formed on both sides of a glass substrate. Disclosed is a method for producing a molded body, which comprises a step of preparing a first mold having a plurality of negative molding surfaces having shapes corresponding to a plurality of molding parts; a step of applying a curable resin onto a surface of the first mold on which the molding surfaces are formed; and a curing step of curing the applied curable resin. The curing step includes a photocuring step wherein curing of the curable resin is carried out by irradiating the resin with light, and a heat curing step wherein the curable resin partly cured by the photocuring step is further cured by being subjected to a heat treatment | 02-24-2011 |
20110194003 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND IMAGE PROCESSING DEVICE - An image processing device comprising: first A/D converters that receive output signals of respective columns of a plurality of pixels arranged in a matrix form, convert the output signals into first digital signals, and output the first digital signals; a second A/D converter that receives a correction signal, converts the correction signal into a second digital signal, and outputs the second digital signal; a first correction calculation unit that produces a first correction formula; a second correction calculation unit that produces a second correction formula based on the second digital signal; a determination unit that compares a coefficient of the second correction formula and a coefficient of a second correction formula produced before the second correction formula, and determines whether or not to produce the first correction formula based on the comparison result; and a signal output unit that outputs an update signal when it is determined to produce the first correction formula. | 08-11-2011 |
20120175500 | SOLID STATE IMAGE PICKUP DEVICE - A solid state image pickup device may include a pixel unit that includes a photoelectric conversion element, the pixel unit including a plurality of pixels that are arranged in a form of a two-dimensional matrix in the pixel unit, each of the plurality of pixels outputting a reset signal and a pixel signal, an analog signal processing unit that includes a first capacitor and a second capacitor, a delay circuit that includes a plurality of delay elements that are connected in a ring form, an A/D converter that detects the number of stages in which the pulse signal has propagated through the delay elements in the delay circuit during a sampling time period and generates a digital signal based on the detected number of stages, and a switching circuit that switches a connection of the first capacitor. | 07-12-2012 |
20120212829 | Method for Producing Wafer Lens Assembly and Method for Producing Wafer Lens - There is provided a method for producing a wafer lens assembly capable of adhering a wafer lens and a spacer surely. The wafer lens assembly includes a first substrate including plural optical members formed of a curable resin on at least one surface, a second substrate joined to the first substrate, and a stop member arranged between the first and second substrates. The first and second substrates are adhered with an adhesive made of a photo-curable resin. The method includes an adhesive applying step of applying the adhesive made of a photo-curable resin on a joining area, a stop-member forming step, and a photo-curing step of irradiating and hardening the adhesive applied in the adhesive applying step with light after the stop-member forming step. The stop member is formed so as not to prevent the light irradiated in the photo-curing step from reaching the adhesive. | 08-23-2012 |
20130250152 | IMAGING DEVICE - An imaging device includes a plurality of first pixels, each of which outputs a first pixel signal, a plurality of second pixels, each of which outputs a second pixel signal, a ramp wave generator that outputs a ramp signal that monotonously increases or monotonously decreases over time, a phase shift pulse generator that outputs first to n-th phase shift pulse signals, a first pixel latch group that latches the first to n-th phase shift pulse signals when the first pixel signal and the ramp signal have a predetermined relationship, a second pixel latch group that latches the first to n-th phase shift pulse signals when the second pixel signal and the ramp signal have the predetermined relationship, first to n-th power source lines to supply a power source and first to n-th phase shift pulse supply lines to supply the phase shift pulses. | 09-26-2013 |
Patent application number | Description | Published |
20090241992 | CLEANING SUBSTRATE AND CLEANING METHOD - A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber. | 10-01-2009 |
20100126668 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 05-27-2010 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20120145324 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 06-14-2012 |
20120204904 | CLEANING SUBSTRATE AND CLEANING METHOD - A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber. | 08-16-2012 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
20140326409 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 11-06-2014 |
Patent application number | Description | Published |
20080300102 | Machine and Electricity Integration Type Shift Controller - A controller for switching the driving status of a car comprising a motor for driving a shift rail of a transfer case, a gear mechanism for transferring the rotation of the motor to the shift rail, a magnet rotating together with the shift rail, and a magnetic sensor element for proving output according to the rotational angle of the magnet, wherein the distance between the magnet and the magnetic sensor element is longer than the position variance of the magnetic sensor. | 12-04-2008 |
20090132127 | CONTROL MODULE FOR SEAT BELT RETRACTOR AND SEAT BELT RETRACTOR - A control module for seat belt retractor capable of controlling a winding torque of a seat belt within a predetermined range, and such a seat belt retractor are provided. The seat belt retractor includes a spool | 05-21-2009 |
20110128066 | MOTOR DRIVING APPARATUS - If a power supply is provided to a circuit necessary to control a switch for switching a path after wakeup, or if a buckle switch is switched while a microcomputer is asleep, an electrical current necessary for reliable operation of the buckle switch cannot be supplied during sleep, so that the buckle switch will not operate normally. This creates the possibility that wakeup cannot be performed. To permit the electrical current necessary for reliable operation of the buckle switch to be secured if the buckle switch is switched while the microcomputer is asleep, an FET capable of being kept ON or OFF by a power supply acting during sleep, a resistor connected with the FET, and a resistor of large resistance for blocking excessive dark current if the buckle switch is connected are arranged in parallel. The combined resistance of the parallel combination of these elements is used as a pull-up resistance at the input of a control unit. | 06-02-2011 |
Patent application number | Description | Published |
20130299455 | FOCUS RING HEATING METHOD, PLASMA ETCHING APPARATUS, AND PLASMA ETCHING METHOD - There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber. | 11-14-2013 |
20140216345 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation. | 08-07-2014 |
20140216346 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation. | 08-07-2014 |