Ken-Ichi
Ken-Ichi Abe, Oura-Gun JP
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20090191319 | Method of manufacturing tea drink - This invention is related to a method of manufacturing a tea drink, which comprises the steps of subjecting tea leaves to extraction to obtain an tea extract and adjusting the pH of the tea extract to the range of 5.0-6.0, mixing nitrogen into the tea extract while applying a negative pressure of 0.01 MPa or more, stabilizing the tea extract in succession to the step of applying a negative pressure by maintaining the tea extract under a pressure of not higher than atmospheric pressure for a period of 30 seconds to 20 minutes, and adjusting the pH of the tea extract to the range of 5.5-6.5 during or subsequent to the step of stabilizing the tea extract. | 07-30-2009 |
Ken-Ichi Abe, Tokyo JP
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20100026647 | INFORMATION PROCESSING METHOD AND APPARATUS - An information processing apparatus comprising a touch screen which detects a touch input by a user detects the position and pressure of each of a plurality of pressed points corresponding to a plurality of touch inputs existing at the same time on a touch screen. Then, the front/rear overlap relationship of the plurality of objects displayed on the touch screen is changed based on the difference in pressure between the detected plurality of pressed points. | 02-04-2010 |
20120268407 | INFORMATION PROCESSING METHOD AND APPARATUS - An information processing apparatus comprising a touch screen which detects a touch input by a user detects the position and pressure of each of a plurality of pressed points corresponding to a plurality of touch inputs existing at the same time on a touch screen. Then, the front/rear overlap relationship of the plurality of objects displayed on the touch screen is changed based on the difference in pressure between the detected plurality of pressed points. | 10-25-2012 |
20130002594 | INFORMATION PROCESSING METHOD AND APPARATUS - An information processing apparatus comprising a touch screen which detects a touch input by a user detects the position and pressure of each of a plurality of pressed points corresponding to a plurality of touch inputs existing at the same time on a touch screen. Then, the front/rear overlap relationship of the plurality of objects displayed on the touch screen is changed based on the difference in pressure between the detected plurality of pressed points. | 01-03-2013 |
20130257806 | INFORMATION PROCESSING METHOD AND APPARATUS - An information processing apparatus comprising a touch screen which detects a touch input by a user detects the position and pressure of each of a plurality of pressed points corresponding to a plurality of touch inputs existing at the same time on a touch screen. Then, the front/rear overlap relationship of the plurality of objects displayed on the touch screen is changed based on the difference in pressure between the detected plurality of pressed points. | 10-03-2013 |
Ken-Ichi Amano, Shinjuku-Ku JP
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20110112071 | NOVEL HETEROCYCLIDENE ACETAMIDE DERIVATIVE - A compound represented by formula (I′): | 05-12-2011 |
Ken-Ichi Chiba, Tsukuba-Shi JP
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20090215795 | CYCLIC AMIDINE DERIVATIVES - A cyclic amidine derivative represented by the formula: | 08-27-2009 |
Ken-Ichi Fuhshuku, Yokohama-Shi JP
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20100062990 | NOVEL PSEUDOGLYCOLIPID AND USE THEREOF - The invention provides a pseudoglycolipid effective for cancer treatment and the like and a novel synthesis intermediate therefor, as well as a medicament containing the pseudoglycolipid and the like. The inventive compound is represented by the formula (1), or a salt thereof, | 03-11-2010 |
Ken-Ichi Fuhshuku, Kanagawa JP
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20090214596 | Nasal Vaccine - The present invention provides a nasal vaccine capable of intranasally inducing an effective immunity reaction. Specifically, the invention provides a nasal vaccine containing a compound having an NKT cell-activating action, particularly a compound represented by the formula (I): | 08-27-2009 |
20090215707 | COMPOUND HAVING CYCLIC STRUCTURE AND USE THEREOF - The present invention relates to a compound represented by the following formula (1′) | 08-27-2009 |
20090221516 | NOVEL GLYCOLIPID AND USE THEREOF - The present invention provide a compound represented by the following formula (1) | 09-03-2009 |
Ken-Ichi Goto, Hisn-Chu TW
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20150194485 | MOSFET STRUCTURE WITH T-SHAPED EPITAXIAL SILICON CHANNEL - A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized. | 07-09-2015 |
Ken-Ichi Goto, Hsinchu TW
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20130256796 | MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE - A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET) device on a substrate includes doping a channel region of the MOSFET device with dopants of a first type. A source and a drain are formed in the substrate with dopants of a second type. Selective dopant deactivation is performed in a region underneath a gate of the MOSFET device. | 10-03-2013 |
Ken-Ichi Goto, Hsin-Chu TW
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20090026553 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 01-29-2009 |
20100059737 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 03-11-2010 |
20100065925 | LOCAL CHARGE AND WORK FUNCTION ENGINEERING ON MOSFET - The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having a source region and a drain region, defining a first dimension from the source to drain; and a gate stack disposed on the semiconductor substrate and partially interposed between the source region and the drain region. The gate stack includes a high k dielectric layer disposed on the semiconductor substrate; a first metal feature disposed on the high k dielectric layer, the first metal gate feature having a first work function and defining a second dimension parallel with the first dimension; and a second metal feature having a second work function different from the first work function and defining a third dimension parallel with the first dimension, the third dimension being less than the second dimension. | 03-18-2010 |
20100327321 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 12-30-2010 |
20110027959 | Tunnel Field-Effect Transistors with Superlattice Channels - A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure. | 02-03-2011 |
20120003804 | Local Charge and Work Function Engineering on MOSFET - The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having a source region and a drain region, defining a first dimension from the source to drain; and a gate stack disposed on the semiconductor substrate and partially interposed between the source region and the drain region. The gate stack includes a high k dielectric layer disposed on the semiconductor substrate; a first metal feature disposed on the high k dielectric layer, the first metal gate feature having a first work function and defining a second dimension parallel with the first dimension; and a second metal feature having a second work function different from the first work function and defining a third dimension parallel with the first dimension, the third dimension being less than the second dimension. | 01-05-2012 |
20120187486 | NON-UNIFORM CHANNEL JUNCTION-LESS TRANSISTOR - The present disclosure discloses a method of forming a semiconductor layer on a substrate. The method includes patterning the semiconductor layer into a fin structure. The method includes forming a gate dielectric layer and a gate electrode layer over the fin structure. The method includes patterning the gate dielectric layer and the gate electrode layer to form a gate structure in a manner so that the gate structure wraps around a portion of the fin structure. The method includes performing a plurality of implantation processes to form source/drain regions in the fin structure. The plurality of implantation processes are carried out in a manner so that a doping profile across the fin structure is non-uniform, and a first region of the portion of the fin structure that is wrapped around by the gate structure has a lower doping concentration level than other regions of the fin structure. | 07-26-2012 |
20130056795 | FinFET Design Controlling Channel Thickness - System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate. | 03-07-2013 |
20130113041 | SEMICONDUCTOR TRANSISTOR DEVICE WITH OPTIMIZED DOPANT PROFILE - Provided is a transistor and a method for forming a transistor in a semiconductor device. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a very low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure so-formed includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile also includes the transistor channel having high dopant impurity concentration areas at opposed ends of the transistor channel. | 05-09-2013 |
20130113042 | MULTI-GATE SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A multi-gate semiconductor device and method for forming the same. A multi-gate semiconductor device is formed including a first fin of a first transistor formed on a semiconductor substrate having a first dopant type. The first transistor has a doped channel region of the first dopant type. The device also includes a second fin of a second transistor formed on the first dopant type semiconductor substrate. The second transistor has a doped channel region of a second dopant type. The device further includes a gate electrode layer of the second dopant type formed over the channel region of the first fin and a gate electrode layer of the first dopant type formed over the channel region of the second fin. | 05-09-2013 |
20130113047 | MOSFET STRUCTURE WITH T-SHAPED EPITAXIAL SILICON CHANNEL - A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized. | 05-09-2013 |
20130126981 | MULTI-GATE SEMICONDUCTOR DEVICES - A multi-gate semiconductor device is formed including a semiconductor substrate. The multi-gate semiconductor device also includes a first transistor including a first fin portion extending above the semiconductor substrate. The first transistor has a first channel region formed therein. The first channel region includes a first channel region portion doped at a first concentration of a first dopant type and a second channel region portion doped at a second concentration of the first dopant type. The second concentration is higher than the first concentration. The first transistor further includes a first gate electrode layer formed over the first channel region. The first gate electrode layer may be of a second dopant type. The first dopant type may be N-type and the second dopant type may be P-type. The second channel region portion may be formed over the first channel region portion. | 05-23-2013 |
20130137236 | Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling - A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions. | 05-30-2013 |
20130277685 | SOI TRANSISTORS WITH IMPROVED SOURCE/DRAIN STRUCTURES WITH ENHANCED STRAIN - A transistor structure with improved device performance, and a method for forming the same is provided. The transistor structure is an SOI (silicon-on-insulator) transistor. In one embodiment, a silicon layer over the oxide layer is a relatively uniform film and in another embodiment, the silicon layer over the oxide layer is a silicon fin. The transistor devices include source/drain structures formed of a strain material that extends through the silicon layer, through the oxide layer and into the underlying substrate which may be silicon. The source/drain structures also include portions that extend above the upper surface of the silicon layer thereby providing an increased volume of the strain layer to provide added carrier mobility and higher performance. | 10-24-2013 |
20140024182 | Non-Uniform Channel Junction-Less Transistor - The present disclosure discloses a method of forming a semiconductor layer on a substrate. The method includes patterning the semiconductor layer into a fin structure. The method includes forming a gate dielectric layer and a gate electrode layer over the fin structure. The method includes patterning the gate dielectric layer and the gate electrode layer to form a gate structure in a manner so that the gate structure wraps around a portion of the fin structure. The method includes performing a plurality of implantation processes to form source/drain regions in the fin structure. The plurality of implantation processes are carried out in a manner so that a doping profile across the fin structure is non-uniform, and a first region of the portion of the fin structure that is wrapped around by the gate structure has a lower doping concentration level than other regions of the fin structure. | 01-23-2014 |
20140103438 | MULTI-GATE SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A multi-gate semiconductor device and method for forming the same. A multi-gate semiconductor device is formed including a first fin of a first transistor formed on a semiconductor substrate having a first dopant type. The first transistor has a doped channel region of the first dopant type. The device also includes a second fin of a second transistor formed on the first dopant type semiconductor substrate. The second transistor has a doped channel region of a second dopant type. The device further includes a gate electrode layer of the second dopant type formed over the channel region of the first fin and a gate electrode layer of the first dopant type formed over the channel region of the second fin. | 04-17-2014 |
20150079752 | FinFET Design Controlling Channel Thickness - System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate. | 03-19-2015 |
20150162334 | MULTI-GATE SEMICONDUCTOR DEVICES - A multi-gate semiconductor device is formed including a semiconductor substrate. The multi-gate semiconductor device also includes a first transistor including a first fin portion extending above the semiconductor substrate. The first transistor has a first channel region formed therein. The first channel region includes a first channel region portion doped at a first concentration of a first dopant type and a second channel region portion doped at a second concentration of the first dopant type. The second concentration is higher than the first concentration. The first transistor further includes a first gate electrode layer formed over the first channel region. The first gate electrode layer may be of a second dopant type. The first dopant type may be N-type and the second dopant type may be P-type. The second channel region portion may be formed over the first channel region portion. | 06-11-2015 |
20150200139 | EPITAXIAL CHANNEL WITH A COUNTER-HALO IMPLANT TO IMPROVE ANALOG GAIN - Some embodiments of the present disclosure relate to an implant that improves long-channel transistor performance with little to no impact on short-channel transistor performance. To mitigate DIBL, both long-channel and short-channel transistors on a substrate are subjected to a halo implant. While the halo implant improves short-channel transistor performance, it degrades long-channel transistor performance. Therefore, a counter-halo implant is performed on the long-channel transistors only to restore their performance. To achieve this, the counter-halo implant is performed at an angle that introduces dopant impurities near the source/drain regions of the long-channel transistors to counteract the effects of the halo implant, while the counter-halo implant is simultaneously shadowed from reaching the channel of the short-channel transistors. | 07-16-2015 |
20150200253 | TRANSISTOR DESIGN - Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel. In some embodiments, a counter-doped layer underlies the delta-doped layer configured to reduce leakage within the semiconductor substrate, and includes dopant impurities of a second impurity type, which is opposite the first impurity type. | 07-16-2015 |
20150200272 | TRANSISTOR HAVING REPLACEMENT GATE AND EPITAXIALLY GROWN REPLACEMENT CHANNEL REGION - The disclosure provides a method of forming a transistor. In this method, a dummy gate structure is formed over a semiconductor substrate. Source/drain regions are then formed in the semiconductor substrate such that a channel region, which is arranged under the dummy gate structure in the semiconductor substrate, separates the source/drains from one another. After the source/drain regions have been formed, the dummy gate structure is removed. After the dummy gate structure has been removed, a surface region of the channel region is removed to form a channel region recess. A replacement channel region is then epitaxially grown in the channel region recess. | 07-16-2015 |
20150200296 | PROCESS DESIGN TO IMPROVE TRANSISTOR VARIATIONS AND PERFORMANCE - The present disclosure relates to a method of forming a transistor device having a carbon implantation region that provides for a low variation of voltage threshold, and an associated apparatus. The method is performed by forming a well region within a semiconductor substrate. The semiconductor substrate is selectively etched to form a recess within the well region. After formation of the recess, a carbon implantation is selectively performed to form a carbon implantation region within the semiconductor substrate at a position underlying the recess. An epitaxial growth is then performed to form one or more epitaxial layers within the recess at a position overlying the carbon implantation region. Source and drain regions are subsequently formed within the semiconductor substrate such that a channel region, comprising the one or more epitaxial layers, separates the source/drains from one another. | 07-16-2015 |
20150249141 | SEMICONDUCTOR TRANSISTOR DEVICE WITH DOPANT PROFILE - A transistor and a method for forming the transistor are provided. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile has high dopant impurity concentration areas at opposed ends of the transistor channel. | 09-03-2015 |
20150263096 | EPITAXIAL CHANNEL - Some embodiments of the present disclosure relate to an epitaxially grown replacement channel region within a transistor, which mitigates the variations within the channel of the transistor due to fluctuations in the manufacturing processes. The replacement channel region is formed by recessing source/drain and channel regions of the semiconductor substrate, and epitaxially growing a replacement channel region within the recess, which comprises epitaxially growing a lower epitaxial channel region over a bottom surface of the recess, and epitaxially growing an upper epitaxial channel region over a bottom surface of the recess. The lower epitaxial channel region retards dopant back diffusion from the upper epitaxial channel region, resulting in a steep retrograde dopant profile within the replacement channel region. The upper epitaxial channel region increases carrier mobility within the channel. The replacement channel region provides improved drive current, thereby enabling better performance and higher yield. | 09-17-2015 |
20150263171 | RECESS AND EPITAXIAL LAYER TO IMPROVE TRANSISTOR PERFORMANCE - Some embodiments of the present disclosure relate to a semiconductor device configured to mitigate against parasitic coupling while maintaining threshold voltage control for comparatively narrow transistors. In some embodiments, a semiconductor device formed on a semiconductor substrate. The semiconductor device comprises a channel comprising an epitaxial layer that forms an outgrowth above the surface of the semiconductor substrate, and a gate material formed over the epitaxial layer. In some embodiments, a method of forming a semiconductor device is disclosed. The method comprises etching the surface of a semiconductor substrate to form a recess between first and second isolation structures, forming an epitaxial layer within the recess that forms an outgrowth above the surface of the semiconductor substrate, and forming a gate material over the epitaxial layer. Other embodiments are also disclosed. | 09-17-2015 |
20150295085 | Dislocation Stress Memorization Technique (DSMT) on Epitaxial Channel Devices - The present disclosure relates to a transistor device having epitaxial source and drain regions with dislocation stress memorization (DSM) regions that provide stress to an epitaxial channel region, and an associated method of formation. The transistor device has an epitaxial stack disposed over a semiconductor substrate, and a gate structure disposed over the epitaxial stack. A channel region extends below the gate structure between epitaxial source and drain regions located on opposing sides of the gate structure. First and second dislocation stress memorization (DSM) regions have a stressed lattice that generates stress within the channel region. The first and second DSM regions respectively extend from below the epitaxial source region to a first location within the epitaxial source region from below the epitaxial drain region to a second location within the epitaxial drain region. Using the first and second DSM regions to stress the channel region, improves device performance. | 10-15-2015 |
20150303302 | SEMICONDUCTOR DEVICE AND FORMATION THEREOF - A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a channel in a semiconductor composite. The active area includes a first active area layer having a first dopant concentration, a second active area layer having a second dopant concentration over the first active area layer, and a third active area layer having a third dopant concentration, over the second active area. The third dopant concentration is greater than the second dopant concentration, and the second dopant concentration is greater than the first dopant concentration. The channel includes a second channel layer comprising carbon over a first channel layer and a third channel layer over the second channel layer. The active area configuration improves drive current and reduces contact resistance, and the channel configuration increases short channel control, as compared to a semiconductor device without the active area and channel configuration. | 10-22-2015 |
Ken-Ichi Goto, Utsunomiya-Shi JP
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20080213607 | Antistatic multilayer sheet and production method thereof - The present invention provides a transparency antistatic multilayer sheet prepared by extrusion sheet molding that is favorable in appearance and retains its antistatic action consistently, and a production method of producing a thick antistatic multilayer sheet reliably by extrusion sheet molding, while preventing generation of contamination of the polishing roll surface and also damage of the sheet appearance. Specifically, it relates to an antistatic multilayer sheet, comprising coat layers constituted of a transparent resin A, said coat layers substantively do not contain a polymeric antistatic agent, and at least one antistatic layer constituted of a transparent resin B and a polymeric antistatic agent, wherein the antistatic layer is in contact with the inside of the coat layer and the coat layers are placed on the outermost faces of the multilayer sheet, wherein the multilayer sheet has a distinctness of image of 60% or higher and an initial electrostatic potential in electrostatic half-life measurement of 2.5 kV or lower, and a production method thereof. | 09-04-2008 |
Ken-Ichi Hattori, Kagawa JP
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20130310733 | ELECTRODE PAD USED FOR IONTOPHORESIS TREATMENT - The present invention verifies a method of reducing skin irritation (particularly, cumulative skin irritation) caused by transdermal administration of a local anesthetic using iontophoresis, and provides an electrode pad for relief from a puncture pain which is safe not only at single administration but also at repeated administrations. The electrode pad comprises a base sheet; an electrode placed on the base sheet; an adhesive sheet placed on the base sheet and having an opening, within which the electrode being exposed; and a medicament reservoir containing a local anesthetic and placed in the opening of the adhesive sheet while being in contact with the electrode. An inner peripheral surface of the opening of the adhesive sheet and an outer peripheral surface of the medicament reservoir are prevented from coming into contact with human skin while contacting with each other, and thereby skin irritation is reduced. | 11-21-2013 |
Ken-Ichi Hayashi, Nagoya JP
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20130249198 | PILLAR GARNISH - The pillar garnish has a main body, an extension part that is formed integrally with the main body, including a guide surface at an upper end of the extension part, the guide surface controlling a direction in which the air bag apparatus is unfolded so that the air bag apparatus is unfolded into the interior of the vehicle when the air bag apparatus is inflated, and a box portion that is formed integrally with the main body and the extension part, the box portion being positioned between the main body and the pillar. The box portion has a back wall portion and a pair of side wall portions that are adjacent to the back wall portion and the main body. The side wall portion has a thick portion and a thin portion, the thin portion being disposed closer to the main body than to the back wall portion. | 09-26-2013 |
Ken-Ichi Hongawa, Shiga JP
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20090311599 | Negative Electrode Active Material for Lithium Ion Rechargeable Battery and Negative Electrode Using the Same - There is provided a negative electrode for a lithium ion secondary battery high in discharge capacity per unit volume, small in capacity loss at the time of initial charge/discharge, and excellent in rapid charge/discharge characteristics. | 12-17-2009 |
Ken-Ichi Inoue, Musashino-Shi JP
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20130338842 | ENERGY MANAGEMENT METHOD AND SYSTEM THEREOF, AND GUI METHOD - Provided is an energy management method using estimate models which correspond to each of a plurality of targets of energy management and which estimate energy consumption and/or energy conversion as the respective targets of energy management are activated. The estimate models are subdivided to correspond to each of a plurality of statuses of the targets of energy management, transitioning upon a temporal axis as the targets of energy management are activated. | 12-19-2013 |
Ken-Ichi Inoue, Tokyo JP
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20150212975 | ENERGY EFFICIENCY EVALUATION SUPPORT DEVICE, NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM STORING COMPUTER PROGRAM, AND METHOD FOR SUPPORTING ENERGY EFFICIENCY EVALUATION - An energy efficiency evaluation support device according to one aspect of the present invention includes a data collector configured to collect actual values of an energy consumption index to be evaluated and actual values of at least one relevant variable and an evaluation display image generator configured to generate a display image for evaluating energy efficiency. The display image includes one axis for the actual values of the energy consumption index and the other axis for model calculated values of the energy consumption index. The model calculated values are calculated from the actual values of the at least one relevant variable using a model representing a correlation between the energy consumption index and the at least one relevant variable. | 07-30-2015 |
Ken-Ichi Ito, Nagano JP
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20080274960 | Fibrosis Inhibitor for Implanted Organ - A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy. | 11-06-2008 |
Ken-Ichi Ito, Matsumoto-Shi JP
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20100137217 | FIBROSIS INHIBITOR FOR IMPLANTED ORGAN - A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy. | 06-03-2010 |
20120149642 | FIBROSIS INHIBITOR FOR IMPLANTED ORGAN - A pharmaceutical preparation comprising a hepatocyte growth factor or a DNA molecule encoding the same and the like according to the present invention can suppress the fibrosis of a transplanted organ after organ transplantation. The present invention is useful in the fields of organ transplantation and regeneration therapy. | 06-14-2012 |
Ken-Ichi Itoh, Yamato JP
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20080220290 | Magnetic recording medium and manufacturing method for the same - To provide a magnetic recording medium manufacturing method capable of transferring a pattern that can serve as a source for forming anodized alumina-nanoholes with high precision and realizing high productivity, and a large-capacity magnetic recording medium capable of achieving high density recording. The method includes forming a metallic layer on a concavo-convex pattern formed on a surface of a mold; bonding a substrate using an adhesive to a surface of the metallic layer on the side opposite to the mold; separating the mold from the metallic layer; forming, through nanohole formation treatment, a porous layer in which a plurality of nanoholes are formed to orient in a direction substantially perpendicular to a substrate plane by using as a nanohole source a concavo-convex pattern which has been formed by transferring the concavo-convex pattern in the mold to the metallic layer; and charging a magnetic material inside the nanoholes. | 09-11-2008 |
20080292805 | METHOD FOR MANUFACTURING STAMPER, METHOD FOR MANUFACTURING NANOHOLE STRUCTURE, AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - According to an aspect of an embodiment, a method for manufacturing a stamper for duplicating a pit pattern on a substrate includes forming on another substrate, a layer of a material insoluble to a liquid of a suspension of particles in a pattern having a plurality of land portions and a plurality of groove portions between the land portions, and dipping the another substrate having the layer of the material having the pattern in the liquid of the suspension of the particles so that the particles are adhered to the groove portions. The-method further includes forming a mold having a plurality of pits corresponding to the particles by transferring the shapes of the particles on the another substrate to the mold, and forming a stamper having a plurality of protrusions corresponding to the pits by transferring the shapes of the pits of the molds to the stamper. | 11-27-2008 |
20090045550 | TRANSCRIPTION MOLD FIXATION APPARATUS AND SUBSTRATE REMOVING METHOD - According to an aspect of an embodiment, a transcription mold fixation apparatus includes a support base, a magnet, a pin, and a regulating mechanism. The support base receives, on a surface thereof, a transcription mold having a center hole formed therein and containing a magnetic material, and the support base has a through hole aligned to the center hole. The magnet is incorporated in the support base, and fixes the transcription mold to the surface of the support base. The pin extends through the through hole. The regulating mechanism causes the magnet to be spaced apart from the magnetic material. | 02-19-2009 |
20090127224 | METHOD OF PRODUCING A NANO-STRUCTURE AND METHOD OF PRODUCING A MAGNETIC RECORDING MEDIUM - According to an aspect of an embodiment, a manufacturing method for a nano-structure comprises the steps of: arranging nano-particles on a substrate having a surface provided with a projecting pattern and a recessing pattern; forming cavities under the nano-particles; and polishing the surfaces in which the cavities are formed. | 05-21-2009 |
20090147405 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE SAME, AND MAGNETIC RECORDING APPARATUS INCORPORATING THE MAGNETIC RECORDING MEDIUM - A method for manufacturing a magnetic recording medium which has a substrate and a magnetic layer formed on the substrate, the method including: forming the magnetic layer over a convexo-concave pattern provided on a surface of a mold, and releasing the mold from the magnetic layer formed on the substrate. | 06-11-2009 |
20090218718 | MANUFACTURING METHOD FOR A MOLD - According to an aspect of an embodiment, a manufacturing method for a mold includes a step of forming a protection film having fluidity on a front surface of a base material on which concave/convex patterns are partitioned, and a step of punching a mold from the base material by causing a male mold to come into a female mold while overlapping a punching surface of the male mold on a back surface of the base material. | 09-03-2009 |
Ken-Ichi Kawada, Kyoto JP
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20090093575 | Resin compositions, method of producing the same and molded article obtained therefrom - Provided are: a first resin composition, which is a polylactic acid-based resin composition containing a polylactic acid resin composition prepared by mixing a polylactic acid resin and a (meth)acrylic acid ester compound in the presence of a peroxide, and a high-strength fiber; and a second resin composition, which contains 70 to 99 parts by mass of a crosslinked biodegradable polyester resin and 1 to 30 parts by mass of an aramid fiber and/or an LCP fiber. In a preferred case, the second resin composition contains 0.01 to 10 parts by mass of a carbodiimide compound with respect to 100 parts by mass of the sum of the crosslinked biodegradable polyester resin and the aramid fiber and/or the LCP fiber. | 04-09-2009 |
20100130651 | CRYSTALLINE POLYLACTIC ACID RESIN COMPOSITION AND PRODUCT MOLDED/FORMED THEREFROM - There is provided a crystalline polylactic acid resin composition comprising 95 to 99.97 parts by mass of a polylactic acid resin (A) having a D-isomer content of not greater than 0.6 mol % or not less than 99.4 mol %, and 0.03 to 5 parts by mass of a crystal nucleus agent (B). There is also provided a crystalline polylactic acid resin composition prepared by melt-kneading 100 parts by mass of a polylactic acid resin (A) having a D-isomer content of not greater than 0.6 mol % or not less than 99.4 mol %, 0.01 to 20 parts by mass of a (meth)acrylate compound (C), and 0.02 to 20 parts by mass of a peroxide (D). | 05-27-2010 |
Ken-Ichi Kawaguchi, Tsukuba-Shi JP
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20100137584 | FUSED HETEROARYL DERIVATIVES - The present invention provides a pharmaceutical composition which is useful as a phosphatidylinositol 3 kinase (PI3K) inhibitor and an antitumor agent, and it provides a novel bicyclic or tricyclic fused heteroaryl derivative or a salt thereof which possesses an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity. | 06-03-2010 |
20100137585 | FUSED HETEROARYL DERIVATIVES - The present invention provides a pharmaceutical composition which is useful as a phosphatidylinositol 3 kinase (PI3K) inhibitor and an antitumor agent, and it provides a novel bicyclic or tricyclic fused heteroaryl derivative or a salt thereof which possesses an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity. | 06-03-2010 |
Ken-Ichi Kawano, Shizuoka-Ken JP
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20100130475 | PREVENTIVE OR THERAPEUTIC AGENT FOR INFLAMMATORY BOWEL DISEASES - The present invention relates to a pharmaceutical composition for preventing or treating inflammatory bowel diseases, which comprises 7,8-dimethoxy-4(5H),10-dioxo-1H-1,2,3-triazolo[4,5-c][1]benzoazepine, a prodrug thereof, preferably 2-(1-isopropoxycarbonyloxy-2-methylpropyl)-7,8-dimethoxy-4(5H),10-dioxo-2H-1,2,3-triazolo[4,5-c][1]benzoazepine as a prodrug, or a pharmaceutically acceptable salt thereof. The pharmaceutical composition according to the present invention is effective in the prophylaxis and therapy of the inflammatory bowel diseases and has few side effects. Particularly, the pharmaceutical composition according to the present invention may exhibit strong prophylactic and therapeutic effects even on severe cases having resistance to the conventional therapeutics. | 05-27-2010 |
Ken-Ichi Kobayashi, Shinjuku JP
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20090212660 | ULTRASONIC MOTOR AND METHOD FOR MANUFACTURING ULTRASONIC MOTOR - [Purpose] The present invention relates to an ultrasonic motor having a stator which includes a piezoelectric element for moving a rotor in a prescribed direction by applying a predetermined ultrasonic voltage thereto, and the rotor which is fixed to the stator by a frictional force, and a method for manufacturing an ultrasonic motor, and it has for its purpose to attain decrease of dust appearance by enhancement of a wear resistance, a different hardness, or the like in such a way that a contact part of at least either of a stator and a rotor which constitute the ultrasonic motor is irradiated with ions. | 08-27-2009 |
Ken-Ichi Kobayashi, Tokyo JP
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20100006756 | CHARGED PARTICLE BEAM APPARATUS AND METHOD FOR GENERATING CHARGED PARTICLE BEAM IMAGE - When the surface of a semiconductor wafer, a photomask or the like sample is charged by irradiation with a charged particle beam, the charging is liable to hamper image observation, inspection and handling. Therefore, the sample and the surface or vicinity of the sample being charged by an electron beam or the like is held in an atmosphere or a reduced pressure atmosphere or in a predetermined gaseous atmosphere within a preliminary evacuation chamber, a sample chamber or the like, containing a soft X-ray generator which irradiates the sample or the vicinity thereof with soft X-rays which are controlled to generate positive ions and negative ions and remove charges on the surface of the sample. | 01-14-2010 |
Ken-Ichi Kosuna, Hokkaido JP
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20090004247 | Novel substance derived from basidiomycetes culture, method for producing it and its use - A novel substance that has the physiological activity of the aglycone of isoflavones and the physiological activity of the culture of the basidiomycetes with the physiological activities being synergistically enhanced, obtained by cultivating a basidiomycetes having a β-glucosidase activity in a medium containing an isoflavone, a method for producing it, and food, feedstuff and medicine containing it. | 01-01-2009 |
Ken-Ichi Kosuna, Sapporo JP
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20110213020 | IMMUNOSTIMULANT COMPOSITIONS COMPRISING A NUCLEOBASE AND A POLYSACCHARIDE OBTAINABLE FROM FUNGI, YEAST OR BACTERIA - The present invention relates to compositions comprising nucleobases and/or sources of nucleobases and polysaccharides from extracts of fungi, yeasts or bacteria. Preferably, the compositions include Nucleoforce® or Nucleoforce® Dogs and AHCC®. Said compositions are useful in the treatment and prevention of immunosuppression, of the toxicity derived from chemotherapy or radiotherapy treatment, of diseases of the immune system, of cancer or an infection; and are also useful to stimulate the immune function in a mammal, including a human. | 09-01-2011 |
Ken-Ichi Miyamoto, Kanazawa JP
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20090238814 | COMPOSITIONS AND METHODS FOR TREATING HYPOPHOSPHATASIA - The present invention provides compositions and methods for use in enzyme replacement therapy. The inventors disclose a method of producing membrane bound enzymes in an active soluble form by eliminating the glycosylphosphatidylinositol (GPI) membrane anchor. In particular the inventors disclose a soluble active form of the membrane bound enzyme TNSALP which they produced by deleting the GPI anchor single peptide sequence. They have further shown that this composition is useful for treatment of hypophosphatasia. The inventors also disclose oligo acid amino acid variants thereof which specifically target bone tissue. | 09-24-2009 |
20110250187 | COMPOSITIONS AND METHODS FOR TREATING HYPOPHOSPHATASIA - The present invention provides compositions and methods for use in enzyme replacement therapy. The inventors disclose a method of producing membrane bound enzymes in an active soluble form by eliminating the glycosylphosphatidylinositol (GPI) membrane anchor. In particular the inventors disclose a soluble active form of the membrane bound enzyme TNSALP which they produced by deleting the GPI anchor single peptide sequence. They have further shown that this composition is useful for treatment of hypophosphatasia. The inventors also disclose oligo acid amino acid variants thereof which specifically target bone tissue. | 10-13-2011 |
Ken-Ichi Murata, Kitakyushu-Shi JP
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20130057004 | ROBOT HAND AND ROBOT DEVICE - This disclosure discloses a robot hand of underactuated mechanism. The robot hand includes a plurality of actuators, a plurality of joints where the number of the joints is more than the number of the actuators, a palm portion, three finger portions each including a plurality of links having bases coupled to the palm portion and coupled being capable of flexion, and a shape-fitting mechanism which is provided in at the finger portion, and which enables to grasp an object to be grasped in an enclosing manner with the finger portions by performing providing torsional displacement to the links. | 03-07-2013 |
Ken-Ichi Murata, Fukuoka JP
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20080309272 | Motor Controller and Control Method Thereof - The present invention provides a motor controller and a motor control method in which displacement does not arise even when an external force is present during the identification of inertia. | 12-18-2008 |
Ken-Ichi Nakagawa, Sakai-Shi JP
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20110011309 | EXOERGIC FILLER COMPOSITION, RESIN COMPOSITION, EXOERGIC GREASE AND EXOERGIC COATING COMPOSITION - The present disclosure provides an exoergic filler composition which is able to exert superior exoergic property, and a resin composition, a grease, and a coating composition which having superior exoergic property, respectively, by using the above-mentioned exoergic filler composition. The exoergic filler composition contains 1 to 50 volume % of a needle-shaped zinc oxide having an average long diameter of 0.1 to 10 μm, an average short diameter of 0.025 to 2.5 μm, aspect ratio defined by (average long diameter)/(average short diameter) of 4 or more and specific surface area according to BET method of 50 m | 01-20-2011 |
20120308824 | SILICA PARTICLES, PROCESS FOR PRODUCTION OF SAME, AND RESIN COMPOSITION CONTAINING SAME - The object of the present disclosure is to obtain silica particles having the sharp particle size distribution and low water-absorbing rate and being used suitably as a filler of a sealing resin composition, a method for producing it, and a resin composition containing the silica particles and a resin. | 12-06-2012 |
Ken-Ichi Nakayama, Yamagata JP
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20120056166 | Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor - An organic semiconductor material is represented by the following formula (F): | 03-08-2012 |
Ken-Ichi Nakayama, Yonezawa-Shi JP
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20120146011 | Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device - A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed. | 06-14-2012 |
Ken-Ichi Nakayama, Numazu-Shi JP
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20090130583 | TONER - Provided is a toner including toner particles each containing at least a binder resin, a colorant, and a wax component, and an inorganic fine powder, the toner being wherein: in a microscopic compression test on the toner, a recovery ratio Z(25) and the gradient of a load-displacement curve R(25) each satisfy a specific range; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) in a specific range and a temperature (P1) of the highest endothermic peak measured with the DSC in a specific range, and the temperature (P1) of the highest endothermic peak and the glass transition temperature (TgA) satisfy a specific relationship. | 05-21-2009 |
20100035171 | YELLOW TONER - Provided is a yellow toner having toner particles each containing at least a binder resin, a colorant, and a polar resin, the yellow toner being characterized in that: the colorant is a coloring compound having a specific structure; in a microscopic compression test at a measurement temperature of 25° C., the toner has a recovery ratio Z(25) of 40 to 80%; and the toner has a glass transition temperature (TgA) measured with a differential scanning calorimeter (DSC) of 40° C. to 60° C. and a temperature (P1) of the highest endothermic peak measured with the DSC of 70° C. to 90° C., and the temperature (P1) of the highest endothermic peak and the glass transition temperature (TgA) satisfy the relationship of 15° C.≦P1−TgA≦50° C. | 02-11-2010 |
20110008726 | PROCESS FOR PRODUCING TONER - Provided is a process for producing a toner comprising steps of: dispersing a polymerizable monomer composition containing a polymerizable monomer, a polar resin, a colorant, and a wax component in a aqueous dispersion medium to granulate the polymerizable monomer composition; and polymerizing the polymerizable monomer, wherein | 01-13-2011 |
Ken-Ichi Nishikawa, Tokyo JP
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20150155083 | R-T-B BASED SINTERED MAGNET - The present invention provides an R-T-B based sintered magnet including R | 06-04-2015 |
20150235750 | R-T-B BASED SINTERED MAGNET - The present invention provides an R-T-B based sintered magnet including R | 08-20-2015 |
Ken-Ichi Noda, Nagoya-City JP
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20110139007 | HYDROGEN SEPARATOR AND PROCESS FOR PRODUCTION THEREOF - A hydrogen separator comprising a porous substrate composed mainly of a ceramic having a large number of pores connecting from one surface of the substrate to other surface, and a hydrogen-separating layer made of a hydrogen permselective metal formed on the porous substrate via an intermediate layer made of an electron-conductive ceramic. The hydrogen separator hardly generates defects such as peeling, cracks or the like in the hydrogen-separating layer and is suitable for use even when the hydrogen separator is exposed to a heat cycle, used under high temperature conditions or/and used for long-term. | 06-16-2011 |
Ken-Ichi Nonaka, Wako-Shi JP
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20090004790 | METHOD FOR MANUFACTURING JUNCTION SEMICONDUCTOR DEVICE - A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region. | 01-01-2009 |
20100001290 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor crystal includes a recombination-inhibiting semiconductor layer ( | 01-07-2010 |
20100159653 | METHOD FOR MANUFACTURING ION IMPLANTATION MASK, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region. | 06-24-2010 |
20130240910 | BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor crystal having a recombination-inhibiting semiconductor layer of a second conductive type that is disposed in the vicinity of the surface between a base contact region and emitter regions and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current. Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced. | 09-19-2013 |
Ken-Ichi Ogawa, Numazu-Shi JP
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20080273904 | IMAGE HEATING APPARATUS AND ROTATABLE HEATING MEMBER USED FOR THE SAME - Disclosed is an image heating apparatus. The image heating apparatus includes a rotatable heating member for heating an image on a recording material in a nip portion, and a heating unit for heating the heating member from the outside thereof. With this structure, a warm-up time period or a first print-out time period can be reduced, and low power consumption can be accomplished. Further, satisfactory image quality can be realized with no heating (fixing) irregularity. The heating member has a low thermal conductive elastic layer, and a heat storage layer outside the low thermal conductive elastic layer to have a volume heat capacity larger than the low thermal conductive elastic layer. A heat capacity of the heat storage layer per unit surface area of a fixing member is in a range of 100 J/m | 11-06-2008 |
Ken-Ichi Ohta, Kawasaki-Shi JP
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20090097046 | IMAGE PROCESSING APPARATUS AND METHOD CONTROLLING THE AMOUNT OF TRANSPARENT INK FOR RECORDING - An image processing apparatus includes a calculation unit configured to calculate an amount of a first coloring material (at least one of cyan, magenta, yellow and black) in an area including a plurality of pixels; a determination unit configured to determine an allowable amount of a second coloring material, being substantially colorless and transparent, in the area on the basis of the amount of the first coloring material, calculated by the calculation unit, and a limit of the amount of the coloring material; and a control unit configured to control an amount of the second coloring material in the area so as not to exceed the allowable amount of the second coloring material. | 04-16-2009 |
20110090521 | IMAGE PROCESSING APPARATUS AND METHOD CONTROLLING THE AMOUNT OF TRANSPARENT INK FOR RECORDING - An image processing apparatus includes a calculation unit configured to calculate an amount of a first coloring material in an area including a plurality of pixels; a determination unit configured to determine an allowable amount of a second coloring material in the area on the basis of the amount of the first coloring material, calculated by the calculation unit, and a limit of the amount of the coloring material; and a control unit configured to control an amount of the second coloring material in the area so as not to exceed the allowable amount of the second coloring material. | 04-21-2011 |
Ken-Ichi Okada, Higashiomi-Shi JP
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20120125397 | SOLAR CELL ELEMENT AND SOLAR CELL MODULE - A semiconductor substrates comprises a semiconductor region of one conductivity type and a layer of another conductivity type with first, second and side surfaces. Over surfaces on the first surface side, the side surface side and an outer peripheral portion on the second surface side of the semiconductor region, the layer is formed. An electrode of the one conductivity type is located on the second surface adjacent to the layer. The semiconductor substrate includes a trench located between the outer periphery of the second surface and an end of the electrode with a spacing from the electrode and configured to isolate the layer along the outer periphery of the second surface. When viewed from the second surface side, a shortest distance between the end of the electrode and the trench is smaller than a shortest distance between a junction of the layer of the side surface side and the trench. | 05-24-2012 |
Ken-Ichi Okazaki, Aichi JP
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20090306394 | Method for Producing Nanoparticles - The present invention provides a method for producing nanoparticles by attaching atoms or molecules constituting a nanoparticle precursor to an ionic liquid. According to this method, it is possible to produce nanoparticles that do not aggregate easily in a liquid without its surface modification. Furthermore, it is possible to produce nanoparticles without the need for a complicated operation or the formation of a by-product because of the direct production of the nanoparticles from the nanoparticle precursor. | 12-10-2009 |
Ken-Ichi Saito, Tokyo JP
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20150310506 | AUTOMATED APPRAISAL SYSTEM FOR CARDS - To automatically identify, assess, and evaluate a trading card to shorten the classification process and compile a database so that cards are precisely assessed or authenticated or the prices of cards are determined based on the conditions thereof in the used-card market. | 10-29-2015 |
Ken-Ichi Sakina, Tokyo JP
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20150199545 | Two-Dimensional Code Authenticating Device, Two-Dimensional Code Generating Device, Two-Dimensional Code Authenticating Method, and Program - A two-dimensional code authenticating device reads a self-authentication two-dimensional code to obtain an RS bit string, and detects a bit string c′ as an error using the RS bit string. Next, an exclusive OR between a bit string l included in the RS bit string and the bit string c′ detected as an error is calculated to obtain a bit string c′, and a bit string md is obtained by decrypting the bit string c′ through a scheme corresponding to the encryption. Subsequently, it is determined whether or not the decrypted bit string md matches the bit string m included in the RS bit string, thereby authenticating the self-authentication two-dimensional code. | 07-16-2015 |
Ken-Ichi Sakurai, Nagaoka-Shi JP
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20080276686 | Method for analyzing gas components, apparatus for separating gas components and method for identifying the same - The present invention provides a method for analyzing gas components, an apparatus for separating the gas components, and a method for identifying the gas components that can provide more accurate information in distribution and consumption by classifying and identifying products that have been subjected to carbon monoxide treatment. The present invention provides a method for quantitatively analyzing gas components contained in a specimen, wherein an untreated specimen having an unchanged solid state and a prescribed weight is placed in an airtight container in which a solution is accommodated; the specimen is homogenized in the airtight container; and the gas components contained the specimen are quantitatively analyzed. | 11-13-2008 |
Ken-Ichi Sasaki, Yokkaichi JP
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20080257834 | Harmful material remediating agent and method for remediating harmful material using the same - The present invention relates to a harmful material remediating agent comprising a metal oxide and a reducing material, and it can remediate environmental. pollutants such as harmful organic compounds and nitrate or nitrite nitrogen-containing compounds efficiently and at low cost. | 10-23-2008 |
Ken-Ichi Sato, Nagoya-Shi JP
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20100215366 | ROUTING METHOD OF OPTICAL COMMUNICATION NETWORK NODE APPARATUS AND OPTICAL COMMUNICATION NETWORK NODE APPARATUS - An optical communication network node apparatus is provided that considerably reduces the node apparatus in scale, especially, a switch device in scale relative to increase in the number of wavelength multiplexes. With a routing operation on the basis of a wavelength at an intra-ring traffic step, light output from a plurality of demultiplexers is subjected to add/drop and routing processes and is directly or indirectly distributed to a plurality of multiplexers, and at an inter-ring traffic step (including a routing operation on the basis of a wavelength group), among lights output from a plurality of demultiplexers, light of another wavelength preliminarily set for inter-ring transmission and different from the light of the wavelength preliminarily set for the intra-ring transmission is subjected to the routing process, and, therefore, the node apparatus is considerably reduced to a smaller scale as compared to a node apparatus that achieves concatenation in a manner capable of routing lights of all the wavelengths to arbitrary optical rings. | 08-26-2010 |
20140029942 | OPTICAL TERMINATING APPARATUS FOR OPTICAL PATH NETWORK - An optical signal terminating apparatus for an optical path network includes: a variable filter selecting an optical signal of a predetermined wavelength path making up any one of a plurality of wavebands included in one wavelength division multiplexing light selected from a plurality of wavelength division multiplexing lights respectively transmitted in parallel via a plurality of optical fibers to a relay node in the optical path network, the variable filter dropping the optical signal to an electric layer, the variable filter including a waveband separator separating the wavelength division multiplexing light into a plurality of wavebands, a waveband selector selecting one waveband from a plurality of wavebands separated by the waveband separator, a wavelength separator separating one waveband selected by the waveband selector into wavelengths, and a drop wavelength selector. | 01-30-2014 |
20140029944 | OPTICAL CROSS-CONNECT APPARATUS - An optical cross-connect apparatus includes: a plurality of optical cross-connect portions each having an inter-node connection input port and an inter-node connection output port respectively connected to each of the plurality of the inter-node connection optical fibers, an internal connection input port, and an internal connection output port, wherein for each of the plurality of the optical cross-connect portions, the internal connection output port of a predetermined optical cross-connect portion is directly connected to the internal connection input port of another optical cross-connect portion, or the internal connection output port of a predetermined optical cross-connect portion is directly connected to the internal connection input port of another optical cross-connect portion and is indirectly connected via the another optical cross-connect portion to the internal connection input port of yet another optical cross-connect portion. | 01-30-2014 |
20140178068 | SPACE SWITCH DEVICE - Disclosed is a spatial switching apparatus having a plurality of input terminals, an input optical signal of a single wavelength being input to each of the plurality of the input terminals, and a plurality of output terminals an output optical signal of a single wavelength being output from each of the plurality of the output terminals. The apparatus includes a signal wavelength converting portion having an electric signal converting element converting the input optical signal into an electric signal and a variable wavelength laser, the signal wavelength converting portion using the variable wavelength laser to convert an electric signal converted by the electric signal converting element into an optical signal of an arbitrary wavelength; and a spatial switching portion having a plurality of first cyclic AWGs performing output from a plurality of output ports corresponding to wavelengths of a plurality of input signals input from the variable wavelength laser. | 06-26-2014 |
Ken-Ichi Setsukinai, Tokyo JP
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20090263910 | METHOD FOR MEASURING HYPOCHLORITE ION - A method for measuring hypochlorite ion, which comprises the steps of: | 10-22-2009 |
20110033944 | METHOD FOR MEASURING HYPOCHLORITE ION - A method for measuring hypochlorite ion, which comprises the steps of: | 02-10-2011 |
Ken-Ichi Shibuya, Toride-Shi JP
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20090162086 | IMAGE FORMING APPARATUS - There is provided an image forming apparatus, including: a image bearing member; a charging member; a developing device; a transfer member that forms a transfer portion, thereby transferring a toner image on the image bearing member, to a transfer material; a first toner charging member disposed on the lower stream side of the transfer portion and on the upper stream side of the charging member in a rotating direction of the image bearing member, thereby charging the toner on the image bearing member by applying voltage; wherein the developing device develops the electrostatic latent image and recovers the toner charged by the first toner charging member, the image forming apparatus further including: a first current detecting portion that detects a current value flowing through the first toner charging member; and a changing portion that changes a transfer condition according to the detected current value. | 06-25-2009 |
Ken-Ichi Shinotani, Osaka JP
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20100137506 | PROCESS FOR PRODUCING MULTI-LAYERED INFORMATION RECORDING MEDIUM, SIGNAL TRANSFER SUBSTRATE, AND PROCESS FOR PRODUCING THE SIGNAL TRANSFER SUBSTRATE - In a process for producing a multilayered information recording medium of the present invention, a process for forming a second signal substrate ( | 06-03-2010 |
20110251357 | ULTRAVIOLET TRANSMISSIVE POLYHEDRAL SILSESQUIOXANE POLYMERS - Inorganic/organic hybrid polymers containing silsesquioxane cages are robust and exhibit desirable physical properties such as strength, hardness, and optical transparency at infrared and ultraviolet wavelengths. The polymers are prepared by polymerizing functionalized polyhedral silsesquioxane monomers such as polyhedral silsesquioxanes bearing two complementarily reactive functional groups bonded to cage silicon atoms by means of spacer moieties. The spacer moieties allow for steric mobility and more complete cure than polyhedral silsesquioxanes bearing reactive functional groups bound directly to cage silicon atoms. | 10-13-2011 |
Ken-Ichi Suzuki, Tokyo JP
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20090054352 | BENZENE DERIVATIVE OR SALT THEREOF - Problem: To provide compounds which have an anticoagulation effect based on their ability to inhibit the activated blood coagulation factor X and are useful as coagulation inhibitors or agents for prevention or treatment for diseases caused by thrombi or emboli. | 02-26-2009 |
20100041668 | Compositions and methods for treating thrombocytopenia - The present invention in certain embodiments is directed to a pharmaceutical dosage form comprising a therapeutically effective amount of a first agent that agonizes a human TPO receptor by binding to the rhTPO binding site of the human TPO receptor; and a therapeutically effective amount of a second agent that agonizes the human TPO receptor by binding to a binding site of the human TPO receptor distinct from the rhTPO binding site. | 02-18-2010 |
20100222329 | 2-ACYLAMINOTHIAZOLE DERIVATIVE OR SALT THEREOF - A 2-acylaminothiazole derivative or a pharmaceutically acceptable salt thereof having an excellent effect of proliferating human c-mpl-Ba/F3 cells and an activity of increasing platelets based on the effect of promoting the formation of megakaryocytic colonies. A compound or a pharmaceutically acceptable salt thereof useful in treating thrombocytopenia. | 09-02-2010 |
20100222361 | 2-ACYLAMINOTHIAZOLE DERIVATIVE OR SALT THEREOF - A 2-acylaminothiazole derivative or a pharmaceutically acceptable salt thereof having an excellent effect of proliferating human c-mpl-Ba/F3 cells and an activity of increasing platelets based on the effect of promoting the formation of megakaryocytic colonies. A compound or a pharmaceutically acceptable salt thereof useful in treating thrombocytopenia. | 09-02-2010 |
20130079351 | 2-ACYLAMINOTHIAZOLE DERIVATIVE OR SALT THEREOF - A 2-acylaminothiazole derivative or a pharmaceutically acceptable salt thereof having an excellent effect of proliferating human c-mpl-Ba/F3 cells and an activity of increasing platelets based on the effect of promoting the formation of megakaryocytic colonies. A compound or a pharmaceutically acceptable salt thereof useful in treating thrombocytopenia. | 03-28-2013 |
Ken-Ichi Suzuki, Yokkaichi-Shi JP
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20130189512 | RESIN COMPOSITION FOR INJECTION MOLDING, INJECTION MOLDED FOAM ARTICLE, AND METHOD FOR PRODUCING INJECTION MOLDED FOAM ARTICLE - A resin composition for injection molding comprising (I) 70-90 wt. parts of a propylene polymer resin having a MFR of at least 30 g/10 min. but smaller than 200 g/10 min. as measured at 230° C. according to ASTM D-1238, (II) 5-25 wt. parts of an ethylene-α-olefin copolymer having a melt strength (MS | 07-25-2013 |
Ken-Ichi Tada, Fujisawa-Shi JP
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20100010248 | IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME - Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M | 01-14-2010 |
20100105936 | METAL-CONTAINING COMPOUND, ITS PRODUCTION METHOD, METAL-CONTAINING THIN FILM, AND ITS FORMATION METHOD - A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M | 04-29-2010 |
20110087039 | IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME - Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M | 04-14-2011 |
Ken-Ichi Takahashi, Ogaki-Shi JP
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20080254583 | Method of fabricating semiconductor device - A method of fabricating a semiconductor device includes steps of forming a gate electrode on the surface of a region of a semiconductor substrate provided with a first element, forming an insulating film to cover the surface of the gate electrode and another region of the semiconductor substrate provided with a second element and forming a sidewall insulating film covering the side surface of the gate electrode while leaving the insulating film on the region of the semiconductor substrate provided with the second element by a prescribed thickness by etching the insulating film up to an intermediate portion from the surface thereof. | 10-16-2008 |
Ken-Ichi Tamura, Toride-Shi JP
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20080237979 | SHEET CONVEYING APPARATUS, IMAGE FORMING APPARATUS, AND IMAGE READING APPARATUS - The present invention provides a sheet conveying apparatus, an image forming apparatus, and an image reading apparatus capable of stably correcting the delay or the advance of a sheet even if sheet conveying rollers such as a skew feeding correction roller and the like are decentered. The delay amount or the advance amount of the sheet being conveyed is detected by a deviation amount detection unit | 10-02-2008 |
20090088308 | SHEET PROCESSING APPARATUS, SHEET PROCESSING METHOD AND IMAGE FORMING APPARATUS - The present invention provides a sheet processing apparatus and an image forming apparatus, in which sheet information can be easily and surely be concealed without damaging a sheet S. After a wrapping portion | 04-02-2009 |
Ken-Ichi Tomita, Mishima-Shi JP
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20080205951 | IMAGE FORMING APPARATUS - An image forming apparatus includes a photosensitive drum, an optical unit provided below the photosensitive drum and including a cover glass for transmitting light emitted toward the photosensitive drum, and a cleaning member configured to clean a surface of the cover glass. The cleaning member includes a cleaning sheet configured to move foreign substances on the surface, and a wiping member configured to wipe foreign substances from the surface. The cleaning sheet and the wiping member move in contact with the surface of the cover glass when the cleaning member cleans the surface. The wiping member moves in contact with a portion of the surface of the cover glass after the cleaning sheet moves in contact with the portion. Accordingly, the cover glass can be reliably cleaned even when an unexpectedly large number of foreign substances that vary in particle size and shape adhere to the cover glass. | 08-28-2008 |
20090269102 | IMAGE FORMING APPARATUS HAVING A CLEANING MEMBER CONFIGURED TO CLEAN A TRANSPARENT MEMBER OF AN OPTICAL DEVICE - An image forming apparatus including a laser scanner configured to irradiate a photoconductive drum with light and having a cover glass transmitting the light, a laser shutter movable between a closed position, where the laser shutter blocks an optical path of the light emitted from the laser scanner through the cover glass toward the photoconductive drum, and an open position, where the laser shutter opens the optical path, and a cleaning member with which the cover glass is cleaned, the cleaning member being supported by the laser shutter in such a manner as to be movable along the laser shutter. | 10-29-2009 |
20110286761 | IMAGE FORMING APPARATUS - An image forming apparatus includes a photosensitive drum, an optical unit provided below the photosensitive drum and including a cover glass for transmitting light emitted toward the photosensitive drum, and a cleaning member configured to clean a surface of the cover glass. The cleaning member includes a cleaning sheet configured to move foreign substances on the surface, and a wiping member configured to wipe foreign substances from the surface. The cleaning sheet and the wiping member move in contact with the surface of the cover glass when the cleaning member cleans the surface. The wiping member moves in contact with a portion of the surface of the cover glass after the cleaning sheet moves in contact with the portion. Accordingly, the cover glass can be reliably cleaned even when an unexpectedly large number of foreign substances that vary in particle size and shape adhere to the cover glass. | 11-24-2011 |
Ken-Ichi Uruga, Kohtoh-Ku JP
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20100252843 | LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE, LIGHT-EMITTING ELEMENT PACKAGE, DISPLAY DEVICE, AND ILLUMINATION DEVICE - A light emitting element mounting substrate that enables a high quality light emitting element package to be readily manufactured with minimal variations in the chromaticity when manufacturing a white LED, a light emitting element package that employs the substrate, and a display device and illumination device that employs this package, are provided. In the light emitting element mounting substrate, at least a light emitting element mounting portion of a surface of a core metal is coated with a fluorescent enamel layer that consists of a fluorescent material-containing glass. In the light emitting element package, a light emitting element is mounted on the light emitting element mounting substrate, and the light emitting element is sealed with a transparent sealing resin. | 10-07-2010 |
Ken-Ichi Uruga, Tokyo JP
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20090122554 | LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE AND MANUFACTURING METHOD THEREOF, LIGHT-EMITTING ELEMENT MODULE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, LIGHTING DEVICE, AND TRAFFIC LIGHT - The present invention provides a light-emitting element mounting substrate which includes: a core metal provided with a reflective cup which reflects light emitted from a mounted light-emitting element in a prescribed direction, and an enamel layer having a thickness within a range of 50 μm to 200 μm, and provided on a surface of the core metal. The present invention also provides a light-emitting element module in which a light-emitting element is provided on this light-emitting element mounting substrate, and in which the light-emitting element is sealed with a transparent sealing resin. | 05-14-2009 |
20090168432 | LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE, LIGHT SOURCE, LIGHTING DEVICE, DISPLAY DEVICE, TRAFFIC SIGNAL, AND METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE - A light-emitting element mounting substrate ( | 07-02-2009 |
Ken-Ichi Yoshida, Musashino-Shi JP
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20140118958 | INPUT/OUTPUT MODULE - An input/output module is configured to achieve at least one of a function of acquiring a measurement signal from a measurement target and a function of outputting data. The input/output module includes a casing, a rotational connector disposed on the casing, the rotational connector including an arc-shaped notch, the rotational connector being configured to interlock with a connection mechanism of a base to serve as a rotation point so that the input/output module is rotatable to get connected to the base and a latch-shaped fixer configured to fit into a groove formed in at least one of an upper inner surface and a lower inner surface when the input/output module is pushed into a slot having the upper inner surface and the lower inner surface to get connected. | 05-01-2014 |