Cheol-Kyu
Cheol-Kyu Kim, Yongin-City KR
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20150226897 | MANUFACTURING METHOD OF REFLECTIVE POLARIZER PLATE AND DISPLAY DEVICE INCLUDING THE SAME - A display device includes a reflective polarizer plate including a first substrate defining an opening area and a non-opening area, and a wire grid polarizer which is disposed on a surface of the first substrate and includes a polarizing part including a plurality of nano wire patterns which is arranged in the opening area to be spaced apart from each other, and a reflecting part including a metal film provided in the non-opening area. | 08-13-2015 |
20160117027 | TOUCH SCREEN PANEL AND MANUFACTURING METHOD THEREOF - A touch screen panel and manufacturing method thereof are disclosed. In one aspect, the touch screen panel includes a substrate, a plurality of first sensing electrodes formed over the substrate in a first direction and a plurality of second sensing electrodes formed over the substrate in a second direction. The touch screen panel also includes at least one insulating layer formed at intersections between the first and second sensing electrodes. The insulating layer has a line shape that extends in one of the first direction or the second direction and crosses the first or second sensing electrodes. | 04-28-2016 |
Cheol-Kyu Kim, Yongin-Si KR
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20160139705 | TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME - A method of forming a touch screen panel including first sensing electrodes in an active region of a substrate and arranged along a first direction and second sensing electrodes arranged along a second direction intersecting the first direction, the method including forming the first sensing electrodes and first connection patterns, the first connection patterns connecting the first sensing electrodes along the first direction; forming an insulating pattern capping the first sensing electrodes and the first connection patterns so that the first sensing electrodes and the first connection patterns are not exposed; and forming the second sensing electrodes between the first sensing electrodes, and second connection patterns on the insulating pattern, the second connection patterns connecting the second sensing electrodes along the second direction. | 05-19-2016 |
Cheol-Kyu Lee, Yongin-Si KR
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20090026515 | Semiconductor memory device and method of forming the same - Example embodiments relate to a semiconductor memory device and a method of forming the semiconductor memory device. The semiconductor memory device may include a first interlayer insulating layer on a semiconductor substrate. A bit line may be arranged in a first direction on the first interlayer insulating layer. A bit line contact pad may be disposed in the first interlayer insulating layer and electrically connected to the bit line. A storage contact pad may be disposed in the first interlayer insulating layer. A top surface of the bit line contact pad may be lower than a top surface of the storage contact pad. | 01-29-2009 |
20090186471 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR REDUCING THERMAL BURDEN ON IMPURITY REGIONS OF PERIPHERAL CIRCUIT REGION - A method of fabricating a semiconductor device for reducing a thermal burden on impurity regions of a peripheral circuit region includes preparing a substrate including a cell active region in a cell array region and peripheral active regions in a peripheral circuit region. A cell gate pattern and peripheral gate patterns may be formed on the cell active region and the peripheral active regions. First cell impurity regions may be formed in the cell active region. A first insulating layer and a sacrificial insulating layer may be formed to surround the cell gate pattern and the peripheral gate patterns. Cell conductive pads may be formed in the first insulating layer to electrically connect the first cell impurity regions. The sacrificial insulating layer may be removed adjacent to the peripheral gate patterns. First and second peripheral impurity regions may be sequentially formed in the peripheral active regions adjacent to the peripheral gate patterns. | 07-23-2009 |
20090263970 | METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE USING SIGE LAYER AS SACRIFICIAL LAYER, AND METHOD OF FORMING SELF-ALIGNED CONTACTS USING THE SAME - There are provided a method of forming a fine pattern of a semiconductor device using a silicon germanium sacrificial layer, and a method of forming a self-aligned contact using the same. The method of forming a self-aligned contact of a semiconductor device includes forming a conductive line structure having a conductive material layer, a hard mask layer, and a sidewall spacer on a substrate, and forming a silicon germanium (Si | 10-22-2009 |
Cheol-Kyu Lee, Gyeonggi-Do KR
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20090042396 | METHODS OF FORMING SEMICONDUCTOR DEVICES USING SELECTIVE ETCHING OF AN ACTIVE REGION THROUGH A HARDMASK - A method of fabricating a semiconductor device is provided. The method can include forming a hard mask film including lower and upper hard mask films on a substrate in which an active region and an isolation region are defined and patterning the hard mask film to provide a hard mask pattern partially exposing the active region and the isolation region. An etchant can be applied to the active and isolation regions using the hard mask pattern as an etching mask to form a trench in the active region of the substrate while avoiding substantially etching the isolation region exposed to the etchant and a gate can be formed on the trench. | 02-12-2009 |
Cheol-Kyu Shin, Suwon-Si KR
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20150270918 | METHOD AND DEVICE FOR DECODING RECEPTION SIGNAL IN WIRELESS COMMUNICATION SYSTEM - A method of decoding a reception signal having an interference signal included therein by User Equipment (UE) in a wireless communication system is provided. The method includes receiving the reception signal having the interference signal included therein, identifying at least one of transmission parameters for the interference signal, identifying a modulation scheme of the interference signal and reception strength of the interference signal using the identified transmission parameter, removing the interference signal from the reception signal based on the identified modulation scheme and the identified reception strength of the interference signal, and decoding the reception signal from which the interference signal is removed. | 09-24-2015 |
20150282192 | METHOD AND APPARATUS FOR RECEIVING DOWNLINK DATA IN WIRELESS COMMUNICATION SYSTEM - A method for receiving downlink data by a User Equipment (UE) in a wireless communication system is provided. The method includes checking a transmission parameter related to data transmitted from an interfering cell, determining presence/absence of an interference signal based on the transmission parameter, determining whether to apply Network Assisted Interference Cancellation and Suppression (NAICS) technology based on at least one of the transmission parameter or the presence/absence of the interference signal, and decoding the downlink data depending on whether to apply the NAICS technology. | 10-01-2015 |
20150312082 | METHOD AND APPARATUS FOR GENERATING CONTROL INFORMATION IN WIRELESS COMMUNICATION SYSTEM - A method for generating control information by a terminal in a wireless communication system is provided. The method includes determining whether the terminal supports a high-order modulation scheme, and if the terminal supports the high-order modulation scheme, feeding back control information for supporting the high-order modulation scheme to a base station. The control information includes a first Channel Quality Indicator (CQI) table for supporting the high-order modulation scheme, and the first CQI table is generated by removing a plurality of CQI entries from a second CQI table including a low-order modulation scheme, and replacing a last CQI table index as the high-order modulation scheme. | 10-29-2015 |
Cheol-Kyu Yang, Suwon-Si KR
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20130167774 | BATCH TYPE APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed. | 07-04-2013 |
20140261174 | APPARATUS FOR PROCESSING WAFERS - A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess. | 09-18-2014 |