Bolotnikov
Aleksey Bolotnikov, South Setauket, NY US
Patent application number | Description | Published |
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20110286576 | Compact Endocavity Diagnostic Probes for Nuclear Radiation Detection - This invention relates to the field of radiation imaging. In particular, the invention relates to an apparatus and a method for imaging tissue or an inanimate object using a novel probe that has an integrated solid-state semiconductor detector and complete readout electronics circuitry. | 11-24-2011 |
20140217297 | Array of Virtual Frisch-Grid Detectors with Common Cathode and Reduced Length of Shielding Electrodes - A radiation detector system is disclosed that effectively solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration. | 08-07-2014 |
20140231657 | RADIATION DETECTOR DEVICE FOR REJECTING AND EXCLUDING INCOMPLETE CHARGE COLLECTION EVENTS - A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events. | 08-21-2014 |
Aleksey E. Bolotnikov, South Setauket, NY US
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20090026371 | High-Energy Detector - The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein. | 01-29-2009 |
20100012851 | Multi-Anode Ionization Chamber - The present invention includes a high-energy detector having a cathode chamber, a support member, and anode segments. The cathode chamber extends along a longitudinal axis. The support member is fixed within the cathode chamber and extends from the first end of the cathode chamber to the second end of the cathode chamber. The anode segments are supported by the support member and are spaced along the longitudinal surface of the support member. The anode segments are configured to generate at least a first electrical signal in response to electrons impinging thereon. | 01-21-2010 |
20110272589 | Hybrid Anode for Semiconductor Radiation Detectors - The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s). | 11-10-2011 |
20130126746 | ARRAY OF VIRTUAL FRISCH-GRID DETECTORS WITH COMMON CATHODE AND REDUCED LENGTH OF SHIELDING ELECTRODES - A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration. | 05-23-2013 |
20140117513 | Production and Distribution of Dilute Species in Semiconducting Materials - Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone. | 05-01-2014 |
Alexander Bolotnikov, Niskayuna, NY US
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20100289032 | DIFFUSED JUNCTION TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME - An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×10 | 11-18-2010 |
20140097450 | Diffused Junction Termination Structures for Silicon Carbide Devices - An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×10 | 04-10-2014 |
Alexander Viktorovich Bolotnikov, Niskayuna, NY US
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20140070231 | SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented. | 03-13-2014 |
20140159141 | INSULATING GATE FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR PROVIDING THE SAME - An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide. | 06-12-2014 |
20150115284 | SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION - A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×10 | 04-30-2015 |
Alexander Viktorovich Bolotnikov, Brooklyn, NY US
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20150155355 | SYSTEMS AND METHODS FOR SEMICONDUCTOR DEVICES - The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.). A semiconductor device includes a well region extending a first depth into a surface of an epitaxial semiconductor layer positioned above a drift region. The device includes a junction field-effect transistor (JFET) region positioned adjacent to the well region in the epitaxial semiconductor layer. The device also includes a trench extending a second depth into the JFET region, wherein the trench comprises a bottom and a sidewall that extends down to the bottom at an angle relative to the surface of the epitaxial semiconductor layer. | 06-04-2015 |
Andrey A. Bolotnikov, Pacific Grove, CA US
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20090304176 | CONFIGURATION FOR ANTIMICROBIAL MULTI-HANDEST TELEPHONE SYSTEM - A multi-handset telephone system has a first telephone handset having an antimicrobial agent situated thereon, a first amplifier that provides built in hearing impaired support, and a first integrated volume control actuator. Further, the multi-handset telephone system has a second telephone handset having the antimicrobial agent situated thereon, a second amplifier that provides built in hearing impaired support, and a second integrated control actuator. The second telephone handset is operably connected to the first handset through a handset cord such that a first user speaks on the first handset and the second user speaks on the second handset to have a face-to face conversation with each other at the same time as having a conversation with a third party remotely. | 12-10-2009 |