Kujirai
Hiroshi Kujirai, Kunitachi JP
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20080237752 | METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented. | 10-02-2008 |
Hiroshi Kujirai, Tokyo JP
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20090075444 | Method of forming semiconductor device having three-dimensional channel structure - A method of forming a semiconductor device is provided. A hollowed portion is formed over an active region of a semiconductor substrate. The bottom of the hollowed portion is lowered in level than the surface of an isolation region of the substrate. A first mask is formed in the hollowed portion, except on a side region that is adjacent to the boundary between the active region and the isolation region. A trench is formed in the side region of the active region by using the first mask and the isolation region as a mask. | 03-19-2009 |
20090101971 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM - A bottom of a gate trench has a first bottom relatively far from an STI and a second bottom relatively near from the STI A portion, in an active region, configuring the second bottom of the gate trench configures a side-wall channel region, and has a thin-film SOI structure sandwiched between the gate electrode and the STI. On the other hand, a portion configuring the first bottom of the gate trench functions as a sub-channel region. A curvature radius of the second bottom is larger than a curvature radius of the first bottom. In an approximate center in a width direction of the gate trench, a bottom of a trench is approximately flat, and on the other hand, in ends of the width direction, a nearly whole bottom of the trench is curved. | 04-23-2009 |
20100022069 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An oxide film and a liner film are formed on an inner wall of a trench in a semiconductor substrate. After filling an SOD film in the trench, a heat treatment is carried out. Part of the liner film in contact with the SOD film is removed to expose part of the SOD film. A heat treatment is carried out on the SOD film. An isolating region is formed by filling an insulating film in the trench. | 01-28-2010 |
20100261328 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING FIN-FIELD EFFECT TRANSISTOR - A semiconductor device includes an element isolation region formed in a semiconductor substrate, an active region surrounded by the element isolation region, and a gate electrode formed in one direction to cross the active region. The semiconductor substrate includes two gate trenches formed in parallel to a major axis direction of the active region in the active region, and a fin-shaped part which is located between the two gate trenches. The gate electrode is buried in the two gate trenches and formed on the fin-shaped part. The fin-shaped part serves as a channel region. A fin field effect transistor in which a width of the channel region is smaller than a gate length is thereby obtained. | 10-14-2010 |
20110156120 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - There are provided: a silicon pillar that is formed almost perpendicularly to a main surface of a substrate; first and second impurity diffused layers that are arranged in a lower part and an upper part of the silicon pillar, respectively; a gate electrode that is arranged horizontally through the silicon pillar; and a gate insulating film that is arranged between the gate electrode and the silicon pillar. The silicon pillar consequently has a small volume, which makes it possible to reduce the leak current of the transistor or thyristor formed in the silicon pillar. | 06-30-2011 |
20110193159 | SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL TRANSISTOR AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a silicon pillar formed substantially perpendicular to a principal surface of a silicon substrate, a first impurity diffusion layer and a second impurity diffusion layer arranged below and above the silicon pillar, respectively, a gate electrode arranged to penetrate through the silicon pillar in a horizontal direction, a gate dielectric film arranged between the gate electrode and the silicon pillar, a back-gate electrode arranged adjacent to the silicon pillar, and a back-gate dielectric film arranged between the back-gate electrode and the silicon pillar. | 08-11-2011 |
20110272760 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes, on a semiconductor substrate, an active region surrounded by an STI region, a gate trench formed in one direction transverse to the active region, a gate insulating film formed on a side surface of the gate trench, an insulating film formed on a bottom of the gate trench and thicker than the gate insulating film, and a gate electrode having at least a part of the gate electrode formed in the gate trench. Portions of the semiconductor substrate present in the active region and located on both sides of the gate trench in an extension direction of the gate trench function as a source region and a drain region, respectively. A portion of the semiconductor substrate located between the side surface of the active region (the side of the STI region) and the side surface of the gate trench functions as a channel region. | 11-10-2011 |
Kazuhiro Kujirai, Ageo-Shi JP
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20150276505 | FUEL TEMPERATURE ESTIMATION DEVICE - A fuel temperature estimation device that can improve the estimation accuracy of a fuel temperature in each part of a fuel channel, is provided. In the invention, the fuel temperature estimation device estimates the fuel temperature of each part of the fuel channel in a vehicle (for example, an injection nozzle, a pressure accumulator, a high-pressure pump), and includes a flow rate measuring device that measures a fuel flow rate of a fuel return system of the fuel channel and a controller. The controller includes a fuel temperature correction unit that corrects an estimated fuel temperature in a fuel injection system based on the fuel flow rate of the fuel return system, and has a function of estimating the fuel temperature using the fuel flow rate of the fuel return system as a parameter. | 10-01-2015 |
Osamu Kujirai, Tokyo JP
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20150173871 | MAGNETIC ATTACHMENT FOR DENTAL PROSTHESIS - Provided is a magnetic attachment for dental prosthesis, in which a material used for an outer shell which covers a permanent magnet does not become magnetized at an unintended portion to reduce magnetic attraction, and which can be easily manufactured. The magnetic attachment for dental prosthesis includes a permanent magnet structure to be fixed to a denture base, on a side where is to have contact with a residual ridge, wherein the permanent magnet is arranged inside the outer shell, and a keeper including a soft magnetic metal material to be fixed on an upper side of a residual ridge in an oral cavity, in a manner to face the permanent magnet structure, wherein a spacer made of a nonmagnetic metal material forming a part of the outer shell which covers the permanent magnet is fixated to another member which forms the outer shell by means of an adhesive agent. | 06-25-2015 |
Takashi Kujirai, Osaka JP
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20090025511 | METHOD AND APPARATUS FOR MAKING METALLIC IRON - A method of making metallic iron in which a compact, containing iron oxide such as iron ore or the like and a carbonaceous reductant such as coal or the like, is used as material, and the iron oxide is reduced through the application of heat, thereby making metallic iron. In the course of this reduction, a shell composed of metallic iron is generated and grown on the surface of the compact, and slag aggregates inside the shell. This reduction continues until substantially no iron oxide is present within the metallic iron shell. Subsequently, heating is further performed to melt the metallic iron and slag. Molten metallic iron and molten slag are separated one from the other, thereby obtaining metallic iron with a relatively high metallization ratio. Through the employment of an apparatus for making metallic iron of the present invention, the above-described method is efficiently carried out, and metallic iron having a high iron purity can be made continuously as well as productively not only from iron oxide having a high iron content but also from iron oxide having a relatively low iron content. | 01-29-2009 |
Toshihiro Kujirai, Kodaira JP
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20120209512 | OPTIMAL PATH SEARCH SYSTEM AND OPTIMAL PATH SEARCH METHOD - An optimal path search system, which optimizes a travel path of a moving object, comprising: a path information database; and a path search unit that searches for an optimal path that exhibits a minimum travel cost borne by the moving object, from among travel paths of the moving object, wherein: the path search unit is configured to: determine destination points on the path network; search for at least one nearest node to each of destination points, search for a second travel path along which the moving object travels by passing through the at least one nearest node and all of the at least one destination point, determine the second travel path for which a travel cost is minimum; and search for the travel paths followed by using each of a plurality of moving means, respectively, in a case where the moving object travels along the optimal path. | 08-16-2012 |
20130013204 | ROUTE GENERATION SYSTEM, ROUTE GENERATION METHOD, AND PROGRAM - Provided is a route generation device capable of generating an appropriate route. A route generation system of one embodiment of the present invention includes: analysis sections that analyze aerial image data to identify the land state of an area included in an aerial image; a storage section that stores traffic cost information associating a traffic-cost coefficient indicating traffic difficulty with the land state; a route searching section that calculates traffic costs of a plurality of routes from a start point to an end point by referring to the analysis results of the analysis sections and the traffic cost information and that determines a route candidate to be used from the start point to the end point based on the calculation results. | 01-10-2013 |
Toshisada Kujirai, Saitama JP
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20100180613 | EXPANSION VALVE - An expansion valve having a tubular member ( | 07-22-2010 |