Kunii, Tokyo
Atsushi Kunii, Tokyo JP
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20100274920 | Adjustment of Transmission Data Rate Based on Data Errors and/or Latency - Aspects of the present disclosure are directed to providing flexible and efficient communication by dynamically adjusting a transmit data rate in response to data status feedback. Such feedback may include information regarding data errors and/or latency. A first communication node communicates with a second communication node and sends data at an initial data rate. The transmit data rate is then selectively adjusted based on data status feedback received from the second communication node or other destination. | 10-28-2010 |
Hisatomo Kunii, Tokyo JP
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20090111983 | Cycloalkylcarbonylamino Acid Derivative and Process For Producing The Same - Cycloalkylcarbonylamino acid derivatives, which are raw material intermediates of a novel cycloalkane carboxamide derivative that selectively inhibits cathepsin K, and a production process thereof, are provided. | 04-30-2009 |
20090131661 | Oxazolone Derivatives - Novel raw material compounds are provided that are useful for producing novel cycloalkane carboxamide derivatives having cathepsin K inhibitory action. | 05-21-2009 |
20090137799 | Cycloalkylcarbonylamino Acid Ester Derivative and Process for Producing The Same - Cycloalkylcarbonylamino acid ester derivatives, which are raw material intermediates for a novel cycloalkane carboxamide derivative having an action that selectively inhibits cathepsin K, and a production process thereof, are provided. | 05-28-2009 |
20090156805 | Cycloalkane Carboxamide Derivatives and Production Process of Same - Novel cycloalkane carboxamide derivatives having an action that selectively inhibits cathepsin K, and a production process thereof, are provided. | 06-18-2009 |
Kazuo Kunii, Tokyo JP
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20090025511 | METHOD AND APPARATUS FOR MAKING METALLIC IRON - A method of making metallic iron in which a compact, containing iron oxide such as iron ore or the like and a carbonaceous reductant such as coal or the like, is used as material, and the iron oxide is reduced through the application of heat, thereby making metallic iron. In the course of this reduction, a shell composed of metallic iron is generated and grown on the surface of the compact, and slag aggregates inside the shell. This reduction continues until substantially no iron oxide is present within the metallic iron shell. Subsequently, heating is further performed to melt the metallic iron and slag. Molten metallic iron and molten slag are separated one from the other, thereby obtaining metallic iron with a relatively high metallization ratio. Through the employment of an apparatus for making metallic iron of the present invention, the above-described method is efficiently carried out, and metallic iron having a high iron purity can be made continuously as well as productively not only from iron oxide having a high iron content but also from iron oxide having a relatively low iron content. | 01-29-2009 |
Masashi Kunii, Tokyo JP
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20150074666 | SUPPORT SYSTEM FOR CREATING OPERATION TASK PROCESS OF COMPUTER SYSTEM AND FIRST MANAGEMENT COMPUTER FOR SUPPORTING CREATION OF OPERATION TASK PROCESS - A second management computer (a management server) acquires either all or a portion of a plurality of task components from a first management computer (a content management server), creates an operation task process based on the acquired plurality of task components, and executes an operation task of the computer system in accordance with the created operation task process. The second management computer manages the execution result of the operation task process, and supplies the execution result to the first management computer. The first management computer acquires, from the second management computer, the configuration information and the execution result of the operation task process, retrieves a task component candidate on the basis of a request from the second management computer, presents the task component candidate to the second management computer, and provides a selected task component to the second management computer. | 03-12-2015 |
Tetsuo Kunii, Tokyo JP
Patent application number | Description | Published |
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20110006351 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region. | 01-13-2011 |
20140014969 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit. | 01-16-2014 |
20140353674 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing a two-dimensional electron gas in the channel layer, a gate electrode, a drain electrode, and a source electrode. Recovery time of a drain current of the semiconductor device is no more than 5 seconds, where the recovery time is defined as the period of time after the semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of the semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds after the stopping of the semiconductor device. | 12-04-2014 |
Yasuo Kunii, Tokyo JP
Patent application number | Description | Published |
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20080251014 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080251015 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |