Patent application number | Description | Published |
20090161635 | RACH-RAMP-UP ACKNOWLEDGEMENT - A disclosed code-division-multiple-access (CDMA) system has a base station (BS) and remote stations (RSs). A BS-spread-spectrum transmitter broadcasts a common-synchronization channel having a chip-sequence signal common to the remote stations served by the BS, and a frame-timing signal. A RS-spread-spectrum receiver receives the broadcast common-synchronization channel, and determines frame timing from the frame-timing signal. A first RS-spread-spectrum transmitter transmits an access-burst signal, which has a plurality of segments. Each access burst signal segment has a plurality of power levels. A BS-spread-spectrum receiver receives the access-burst signal at a detected-power level. In response to receiving the access-burst signal, a BS-spread-spectrum transmitter transmits an acknowledgment signal to the RS-spread-spectrum receiver. The RS-spread-spectrum receiver receives the acknowledgment signal, and in, the RS-spread-spectrum transmitter transmits a spread-spectrum signal having data to the BS-spread-spectrum receiver. | 06-25-2009 |
20100004016 | Power control techniques - Embodiments provide techniques for power control. For instance, a method exchanges one or more transmissions with a remote device in accordance with a retransmission protocol. In addition, a power control message is exchanged with the remote device through at least one of the one or more transmissions. Thus, closed loop power control may be performed through retransmission protocol communications. | 01-07-2010 |
20130010835 | RACH RAMP-UP ACKNOWLEDGEMENT - A disclosed code-division-multiple-access (CDMA) system has a base station (BS) and remote stations (RSs). A BS-spread-spectrum transmitter broadcasts a common-synchronization channel having a chip-sequence signal common to the remote stations served by the BS, and a frame-timing signal. A RS-spread-spectrum receiver receives the broadcast common-synchronization channel, and determines frame timing from the frame-timing signal. A first RS-spread-spectrum transmitter transmits an access-burst signal, which has a plurality of segments. Each access burst signal segment has a plurality of power levels. A BS-spread-spectrum receiver receives the access-burst signal at a detected-power level. In response to receiving the access-burst signal, a BS-spread-spectrum transmitter transmits an acknowledgment signal to the RS-spread-spectrum receiver. The RS-spread-spectrum receiver receives the acknowledgment signal, and in, the RS-spread-spectrum transmitter transmits a spread-spectrum signal having data to the BS-spread-spectrum receiver. | 01-10-2013 |
Patent application number | Description | Published |
20160142295 | STATEFUL SERVICES ON STATELESS CLUSTERED EDGE - In order to enable dynamic scaling of network services at the edge, novel systems and methods are provided to enable addition of add new nodes or removal of existing nodes while retaining the affinity of the flows through the stateful services. The methods provide a cluster of network nodes that can be dynamically resized to handle and process network traffic that utilizes stateful network services. The existing traffic flows through the edge continue to function during and after the changes to membership of the cluster. All nodes in the cluster operate in active-active mode, i.e., they are receiving and processing traffic flows, thereby maximizing the utilization of the available processing power. | 05-19-2016 |
20160142296 | STATEFUL SERVICES ON STATELESS CLUSTERED EDGE - In order to enable dynamic scaling of network services at the edge, novel systems and methods are provided to enable addition of add new nodes or removal of existing nodes while retaining the affinity of the flows through the stateful services. The methods provide a cluster of network nodes that can be dynamically resized to handle and process network traffic that utilizes stateful network services. The existing traffic flows through the edge continue to function during and after the changes to membership of the cluster. All nodes in the cluster operate in active-active mode, i.e., they are receiving and processing traffic flows, thereby maximizing the utilization of the available processing power. | 05-19-2016 |
20160142297 | STATEFUL SERVICES ON STATELESS CLUSTERED EDGE - In order to enable dynamic scaling of network services at the edge, novel systems and methods are provided to enable addition of add new nodes or removal of existing nodes while retaining the affinity of the flows through the stateful services. The methods provide a cluster of network nodes that can be dynamically resized to handle and process network traffic that utilizes stateful network services. The existing traffic flows through the edge continue to function during and after the changes to membership of the cluster. All nodes in the cluster operate in active-active mode, i.e., they are receiving and processing traffic flows, thereby maximizing the utilization of the available processing power. | 05-19-2016 |
20160142314 | STATEFUL SERVICES ON STATELESS CLUSTERED EDGE - In order to enable dynamic scaling of network services at the edge, novel systems and methods are provided to enable addition of add new nodes or removal of existing nodes while retaining the affinity of the flows through the stateful services. The methods provide a cluster of network nodes that can be dynamically resized to handle and process network traffic that utilizes stateful network services. The existing traffic flows through the edge continue to function during and after the changes to membership of the cluster. All nodes in the cluster operate in active-active mode, i.e., they are receiving and processing traffic flows, thereby maximizing the utilization of the available processing power. | 05-19-2016 |
Patent application number | Description | Published |
20150380895 | OPTOELECTRONIC PACKAGE - A optoelectronic package includes an inner package with a dielectric substrate having at least a first dielectric level with a photodetector (PD) die on a die attach area, first routing connecting a first contact to a first external bond pad (FEBP), and second routing connecting a second contact to a second external bond pad (SEBP). An outer package (OP) includes a ceramic substrate including a light source die on a base portion in direct line of sight with the PD including a first electrode and second electrode. A first wire bond connects the FEBP to a first terminal, a second wire bond connects the SEBP to a second terminal, a third wire bond connects the first electrode to a third terminal, and a fourth wire bond connects the second electrode to a fourth terminal. | 12-31-2015 |
20160093575 | OPTOELECTRONIC PACKAGES HAVING MAGNETIC FIELD CANCELATION - A stacked optoelectronic packaged device includes a bottom die having a top surface including bottom electrical traces and a light source die coupled to ≧1 bottom electrical traces. A first cavity die is on the bottom die. An optics die is on the first cavity die and a second cavity die on the optics die. A mounting substrate is on the second cavity die including top electrical traces. A photodetector die is optically coupled to receive light from the light source. The bottom and top electrical traces are both positioned substantially symmetrically on sides of a mirror plane so that when conducting equal and opposite currents a first magnetic field emanating from the first side and a second magnetic field emanating from the second side cancel one another to provide a reduction in magnetic flux density by more than 50% at one or more die locations on the optics die. | 03-31-2016 |
20160093595 | OPTICALLY PUMPED SENSORS OR REFERENCES WITH DIE-TO-PACKAGE CAVITIES - An optoelectronic packaged device includes stacked components within a package including a package substrate providing side and a bottom wall. The stacked components includes a comb structure on the bottom wall formed from a material having a thermal resistance >a substrate material for the bottom die providing spaced apart teeth separated by gaps. The bottom die has a top surface including electrical trace(s) and a light source die for emitting light coupled to the electrical trace and a bottom surface on the comb structure. A first cavity die is on the top surface of the bottom die or on legs of the package which extend above the bottom wall. An optics die is on the first cavity die, a second cavity die is on a sealing die which is on the optics die, and a photodetector (PD) die is optically coupled to receive light from the light source die. | 03-31-2016 |
20160093761 | OPTOELECTRONIC PACKAGES HAVING THROUGH-CHANNELS FOR ROUTING AND VACUUM - A stacked optoelectronic packaged device includes a plurality of stacked components within a package material having a package body providing side walls and a bottom wall for the package, and a lid which seals a top of the package. The stacked components include a first cavity die having a top surface and a bottom surface including at least one through-channel formed in the bottom surface. A bottom die has a top surface including at least one electrical trace and a light source die thereon. At least one of the through-channels of the first cavity die are aligned to the electrical trace, and the first cavity die is bonded to the bottom die with the electrical trace being within the through-channel and not contacting the first cavity die to provide a vacuum sealing structure. A photodetector (PD) is optically coupled to receive the light originating from the light source. | 03-31-2016 |
Patent application number | Description | Published |
20090296493 | MID-SIZE NVM CELL AND ARRAY UTILIZING GATED DIODE FOR LOW CURRENT PROGRAMMING - A method of operating a non-volatile memory (NVM) cell structure that utilizes gated diode is provided. The cell architecture, utilizing about 4-10 um2 per bit, includes gated diodes that are used to program the cells while consuming low programming current. The cell architecture also allows a large number of cells to be programmed at the same time, thereby reducing the effective programming time per bit. Erase and read mode bias conditions are also provided. | 12-03-2009 |
20110007570 | METHOD OF READING AN NVM CELL THAT UTILIZES A GATED DIODE - A method of reading an NVM cell structure formed on a deep well of N-type semiconductor material, wherein the NVM cell structure includes a PMOS transistor formed in an N-type well, the PMOS transistor including spaced-apart p-type source and drain region defining an n-type cannel region therebetween, an NMOS transistor formed in a P-type well that is adjacent to the N-type well, the NMOS transistor including spaced-apart n-type source and drain regions defining a p-type channel region therebetween, a conductive floating gate that includes a first section that extends over the n-type channel region of the PMOS transistor and is separated therefrom by intervening dielectric material and a second section that extends over the p-type channel region and is separated therefrom by intervening dielectric material, and a conductive control gate formed over at least a portion of the second section of the floating gate and is separated therefrom by intervening dielectric material, the method comprising: biasing the deep N-type well at a preselected read voltage; holding the source region of the PMOS transistor at the read voltage; holding the drain of the PMOS transistor at ground; and holding the control gate at ground for a preselected read time. | 01-13-2011 |
20110007574 | METHOD OF ERASING AN NVM CELL THAT UTILIZES A GATED DIODE - A method of erasing an NVM cell structure formed on a deep well of N-type semiconductor material, wherein the NVM cell structure includes a PMOS transistor formed in an N-type well, the PMOS transistor including spaced-apart p-type source and drain regions defining an n-type channel region therebetween, an NMOS transistor formed in a P-type well that is adjacent to the N-type well, the NMOS transistor including spaced-apart n-type source and rain regions defining a p-type channel region therebetween, a conductive floating gate that includes a first section that extends over the n-type channel region of the PMOS transistor and is separated therefrom by intervening dielectric material and a second section that extends over the p-type channel region and is separated therefrom by intervening dielectric material, and a conductive control gate formed over at least a portion of the second section of the floating gate and separated therefrom by intervening dielectric material, the erasing method comprising: biasing the deep N-type well at a selected erase voltage; holding the source and drain regions of the PMOS transistor at the erase voltage or floating; and holding the control gate at ground for a preselected erase time. | 01-13-2011 |
20130015850 | Die-Sized Atomic Magnetometer and Method of Forming the MagnetometerAANM Lindorfer; PhilippAACI San JoseAAST CAAACO USAAGP Lindorfer; Philipp San Jose CA USAANM Hopper; Peter J.AACI San JoseAAST CAAACO USAAGP Hopper; Peter J. San Jose CA USAANM French; WilliamAACI San JoseAAST CAAACO USAAGP French; William San Jose CA USAANM Mawson; PaulAACI Los GatosAAST CAAACO USAAGP Mawson; Paul Los Gatos CA USAANM Hunt; StevenAACI San JoseAAST CAAACO USAAGP Hunt; Steven San Jose CA USAANM Parsa; RoozbehAACI San JoseAAST CAAACO USAAGP Parsa; Roozbeh San Jose CA US - The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics. | 01-17-2013 |
20130147472 | Micro-Fabricated Atomic Magnetometer and Method of Forming the Magnetometer - The cost and size of an atomic magnetometer are reduced by attaching a vapor cell structure that has a vapor cell cavity to a base die that has a laser light source that outputs light to the vapor cell cavity, and attaching a photo detection die that has a photodiode to the vapor cell structure to detect light from the laser light source that passes through the vapor cell cavity. | 06-13-2013 |
20130176703 | Thermally-Insulated Micro-Fabricated Atomic Clock Structure and Method of Forming the Atomic Clock Structure - A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to −40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell. | 07-11-2013 |
20150027908 | MULTIPLE-CAVITY VAPOR CELL STRUCTURE FOR MICRO-FABRICATED ATOMIC CLOCKS, MAGNETOMETERS, AND OTHER DEVICES - An apparatus includes a vapor cell having multiple cavities fluidly connected by one or more channels. At least one of the cavities is configured to receive a first material able to dissociate into one or more gases that are contained within the vapor cell. At least one of the cavities is configured to receive a second material able to absorb at least a portion of the one or more gases. The vapor cell could include a first cavity configured to receive the first material and a second cavity fluidly connected to the first cavity by at least one first channel, where the second cavity is configured to receive the gas(es). The vapor cell could also include a third cavity fluidly connected to at least one of the first and second cavities by at least one second channel, where the third cavity is configured to receive the second material. | 01-29-2015 |
20150028866 | VAPOR CELL STRUCTURE HAVING CAVITIES CONNECTED BY CHANNELS FOR MICRO-FABRICATED ATOMIC CLOCKS, MAGNETOMETERS, AND OTHER DEVICES - A first apparatus includes a vapor cell having first and second cavities fluidly connected by multiple channels. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity. A second apparatus includes a vapor cell having a first wafer with first and second cavities and a second wafer with one or more channels fluidly connecting the cavities. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity. | 01-29-2015 |
20150311355 | THERMALLY-INSULATED MICRO-FABRICATED ATOMIC CLOCK STRUCTURE AND METHOD OF FORMING THE ATOMIC CLOCK STRUCTURE - A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to −40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell. | 10-29-2015 |
20150370222 | MANUFACTUREABLE LONG CELL WITH ENHANCED SENSITIVITY AND GOOD MECHANICAL STRENGTH - A method of providing a manufactureable long vapor cell with enhanced sensitivity and good mechanical strength, wherein the method provides a structure that increases the overall length of the vapor cell. | 12-24-2015 |
20150372686 | MICROFABRICATED ATOMIC CLOCKS (MFAC) & MAGNETOMETERS (MFAM):SELF-CONDENSING SILICON VAPOR CELL CAVITY STRUCTURE - A microfabricated atomic clock (mfac) or magnetometer (mfam) vapor cell utilizing a method of forming a self-condensing silicon vapor cell cavity structure for the atomic clock or magnetometer. | 12-24-2015 |
20150378316 | MICROFABRICATED ATOMIC CLOCKS (MFAC) & MAGNETOMETERS (MFAM): HIGHSENSITIVITY VAPOR CELL STRUCTURE WITH INTERNAL CONDENSATION SITE - A microfabricated atomic clock (mfac) or magnetometer (mfam) vapor cell utilizing a method of forming a self-condensing silicon vapor cell cavity structure for the atomic clock or magnetometer. | 12-31-2015 |
20160054398 | DIE-SIZED ATOMIC MAGNETOMETER AND METHOD OF FORMING THE MAGNETOMETER - The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics. | 02-25-2016 |