Peroni
Alessandro Peroni, Porto San Giorgio (ap) IT
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20090025257 | WATERPROOF FOOTWEAR APPLICATION - A waterproof article of footwear, comprising an upper consisted of one or more cut-shaped portions of a flexible waterproof material and a sole coupled to said upper, characterized in that said upper is assembled by stitches applied between peripheral edges of said cut-shaped waterproof material portions, said stitches being covered with a waterproof coating able to couple to said stitches and said upper according to a closeness relationship to each other; and a method of manufacture thereof. | 01-29-2009 |
Drew B. Peroni, Dover, PA US
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20080302424 | Self-Cleaning Valves for use in Vacuum Cleaners and other Self-Cleaning Valves - A self-cleaning valve assembly is provided, such as for use in a vacuum cleaner such as a particularly advantageous vacuum cleaner system that has at least two filters and self-cleans its filters via back-flushing, without needing to stop normal operation to self-clean. Also, a vacuum cleaner is provided that uses permanent, self-cleaning filters, and does not need disposable filters or filter bags, and advantageously can use inexpensive plastic bags. In another vacuum cleaner system, waste is collected in an ordinary plastic bag without any special preparation or modification of the bag being needed. Further, an inventive self-cleaning X-valve assembly cleans itself and is useable in the vacuum cleaner system. | 12-11-2008 |
John F. Peroni, Watkinsville, GA US
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20150320833 | OSSIFICATION-INDUCING COMPOSITIONS AND METHODS OF USE THEREOF - Mesenchymal stem cells (MSCs) and uses thereof are provided. MSCs for inducing ossification and enhancing bone and/qr cartilage repair in a patient in need thereof are also provided. The method and compositions combine MSCs, at least one bone regeneration protein, such as bone morphogenetic protein (e.g. BMP-2), optionally in combination with additional cell growth factors including the components of a cell growth medium, further in combination with a biomaterial for delivery of the cells to the repair site in the patient are also provided. | 11-12-2015 |
Marco Peroni, Roma IT
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20100102358 | SINGLE VOLTAGE SUPPLY PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT) POWER DEVICE AND PROCESS FOR MANUFACTURING THE SAME - Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device ( | 04-29-2010 |
20120001305 | Method of Manufacturing Vertical Pin Diodes - The invention concerns a method of manufacturing a vertical PIN diode comprising: providing an epitaxial wafer comprising a vertically stacked N-type layer, intrinsic layer and P-type layer; forming an anode contact of the vertical PIN diode by forming an anode metallization on a first portion of the P-type layer defining an anode region; forming an electrically insulating layer around the anode region such that a first portion of the intrinsic layer extends vertically between the N-type layer and the anode region and second portions of the intrinsic layer extend vertically between the N-type layer and the electrically insulating layer; forming a trench in the electrically insulating layer and in the second portions of the intrinsic layer so as to expose a portion of the N-type layer defining a cathode region and to define a sacrificial side-guard ring consisting of a portion of the electrically insulating layer that extends laterally between the trench and the anode region and laterally surrounds said anode region; and forming a cathode contact of the vertical PIN diode by forming a cathode metallization on the exposed portion of the N-type layer defining the cathode region. | 01-05-2012 |
20140061876 | METHOD OF MANUFACTURING VERTICAL PIN DIODES - Disclosed is a vertical PIN diode having: an N-type layer; a cathode contact formed on a first portion of the N-type layer defining a cathode region; an intrinsic layer formed on a second portion of the N-type layer; a portion of a P-type layer formed on a first portion of the intrinsic layer and defining an anode region; an anode contact formed on the portion of the P-type layer defining the anode region; and a protection structure formed on a second portion of the intrinsic layer to laterally protect the portion of the P-type layer defining the anode region from an etching intended to expose the first portion of the N-type layer defining the cathode region, wherein the protection structure is formed by implanting ions in a further portion of the P-type layer, which laterally surrounds the portion of the P-type layer defining the anode region. | 03-06-2014 |
Marco Peroni, Rome IT
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20130189817 | MANUFACTURING OF SCALABLE GATE LENGTH HIGH ELECTRON MOBILITY TRANSISTORS - A process of manufacturing a high electron mobility transistor, comprising: providing an epitaxial substrate comprising a semi-insulating substrate, a buffer layer and a barrier layer sequentially stacked; forming a first and second current conducting electrodes formed on, and in ohmic contact with, the barrier layer; and forming a control gate on, and in Schottky contact with, the barrier layer, between the first and second current conducting electrodes. The control gate is formed on the barrier layer by initially forming a lower portion of the control gate, then performing a thermal stabilization and annealing treatment to remove the damage to the crystal lattice of the surface of the semiconductor introduced by the preceding process steps and stabilize the metal-semiconductor interface of the Schottky junction, and finally forming an upper portion of the control gate on, and in electric contact with, the lower portion of the control gate. | 07-25-2013 |
20130193487 | HIGH ELECTRON MOBILITY TRANSISTORS WITH FIELD PLATE ELECTRODE - A high electron mobility transistor comprising: | 08-01-2013 |
Odile Peroni, Brookline, MA US
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20100009363 | RBP4 In Insulin sensitivity/resistance, diabetes, and obesity - Methods for screening molecules that modulate the activity of Retinol Binding Protein 4 (RBP4) and their use in treatment of insulin resistance are described. Also described are methods of diagnosing insulin resistance and related conditions by detecting modulation of RBP4 activity. | 01-14-2010 |
20120295950 | RBP4 IN INSULIN SENSITIVITY/RESISTANCE, DIABETES, AND OBESITY - Methods for screening molecules that modulate the activity of Retinol Binding Protein 4 (RBP4) and their use in treatment of insulin resistance are described. Also described are methods of diagnosing insulin resistance and related conditions by detecting modulation of RBP4 activity. | 11-22-2012 |
20140044737 | RBP4 IN INSULIN SENSITIVITY/RESISTANCE, DIABETES, AND OBESITY - Methods for screening molecules that modulate the activity of Retinol Binding Protein 4 (RBP4) and their use in treatment of insulin resistance are described. Also described are methods of diagnosing insulin resistance and related conditions by detecting modulation of RBP4 activity. | 02-13-2014 |