Patent application number | Description | Published |
20100059785 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flip-chip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process. | 03-11-2010 |
20100090239 | CERAMIC PACKAGE STRUCTURE OF HIGH POWER LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A ceramic package structure of a high power light emitting diode comprises a light emitting diode die, a ceramic substrate, at least two conductive rods, and an electrical conductive film. The ceramic substrate comprises a first surface and a second surface opposite the first surface. A reflecting cup is disposed on the first surface. At least two through holes are disposed on the bottom of the reflecting cup. The electrical conductive film comprises a first electrode and a second electrode, and is fixed to the second surface. The at least two conductive rods are respectively filled in the at least two through holes, and are respectively connected to the first electrode and the second electrode. The LED diode is mounted on one or at least two of the conductive rods, and is electrically connected to the at least two conductive rods. | 04-15-2010 |
20110062474 | LIGHT-EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF - A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the light-emitting diode die, and configured to direct light from the light-emitting die in a predetermined direction. The lens is directly molded within the reflector, covering the fluorescent layer. | 03-17-2011 |
20110089464 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer electrode includes an end surface section and a side surface section. The end surface sections are disposed, corresponding to the inner electrodes, on the second surface. Each side surface section extends onto the side surface of the electrode portion. The conductive pillar penetrates between the inner electrode and the outer electrode. The light emitting diode die is on the first surface, electrically connecting the inner electrode. The cap layer covers the light emitting diode die. | 04-21-2011 |
20120021541 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flipchip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process. | 01-26-2012 |
Patent application number | Description | Published |
20090022198 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin conductive film with a pattern, a die, at least one metal wire or metal bump and a transparent encapsulation material. The die is mounted on the first surface of the thin conductive film, and is electrically connected to the thin conductive film through the metal wire or the metal bump. The transparent encapsulation material is overlaid on the first surface of the conductive film and the die. A second surface of the conductive film is not covered by the transparent encapsulation material, and is opposite the first surface. | 01-22-2009 |
20090206358 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film. | 08-20-2009 |
20100304535 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film. | 12-02-2010 |