Patent application number | Description | Published |
20090021974 | SEMICONDUCTOR DEVICE - A semiconductor device where multiple chips of identical design can be stacked, and the spacer and interposer eliminated, to improve three-dimensional coupling information transmission capability. A first semiconductor circuit including a three-dimensional coupling circuit (three-dimensional coupling transmission terminal group and three-dimensional coupling receiver terminal group); and a second semiconductor integrated circuit including a three-dimensional coupling circuit and feed-through electrode (power supply via hole and ground via hole); and a third semiconductor integrated circuit including a three-dimensional coupling circuit and feed-through electrode are stacked on the package substrate. | 01-22-2009 |
20090031053 | SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE WITH THE SAME - An interconnect configuration technology of making an access from an IP mounted on a semiconductor chip to an IP mounted on another semiconductor chip by transmitting and receiving a packet transferred through an interconnect built in a semiconductor chip among the chips using the 3D coupling technology. The device according to the technology has an initiator for transmitting an access request, a target for receiving the access request and transmitting an access response, a router for relaying the access request and the access response, and a 3D coupling circuit (three-dimensional transceiver) for performing communication with the outside, wherein the 3D coupling circuit is disposed adjacent to the router. | 01-29-2009 |
20090089786 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR REAL-TIME PROCESSING - A technology capable of efficiently performing the processes by using limited resources in an LSI where a plurality of real-time applications are parallelly processed is provided. To provide such a technology, a mechanism is provided in which a plurality of processes to be executed on a plurality of processing units in an LSI are managed throughout the LSI in a unified manner. For each process to be managed, a priority is calculated based on the state of progress of the process, and the execution of the process is controlled according to the priority. A resource management unit IRM or program that collects information such as a process state from each of the processing units executing the processes and calculates a priority for each process is provided. Also, a programmable interconnect unit and storage means for controlling a process execution sequence according to the priority are provided. | 04-02-2009 |
20090157252 | VEHICLE ELECTRONIC SYSTEM AND VEHICLE - In a vehicle electronic system including a plurality of LSI boards, LSIS which cannot control a user interface such as image or audio directly issue a command for notifying a vehicle occupant of its own information via networks and an information control LSI receives the request to output a message. A mechanism for setting priority of processings regarding LSI status information notification to be lower than that of an apparatus control processing is provided in each of LSIs and networks so that real-time property of the apparatus control processing is maintained. In order to reduce network load regarding the LSI status information notification, a message content itself is stored in a memory in a vehicle information processing unit previously so that only an ID for identifying the message content is transmitted. | 06-18-2009 |
20090245445 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor device including a pair of stacked semiconductor ICs capable of communicating with each other by wireless. Each IC has: a transmitter circuit operable to send, by wireless, transmit data together with a clock signal deciding a transmission timing, and arranged so that the wireless transmission timing is adjustable; a receiver circuit operable to receive data in synchronization with a clock signal received by wireless, and arranged so that its wireless reception timing is adjustable; and a control circuit operable to perform timing adjustments of the transmitter and receiver circuits based on a result of authentication of data returned by the other IC in response to data transmitted through the transmitter circuit, and received by the receiver circuit. This arrangement for near field communication between stacked semiconductor ICs enables: reduction of the scale of a circuit for communication timing adjustment; and highly accurate adjustment of the communication timing. | 10-01-2009 |
20090262574 | SEMICONDUCTOR DEVICE - A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit. | 10-22-2009 |
20100008058 | SEMICONDUCTOR DEVICE - Traffic between logic LSIs and memory is increasing year by year and there is demand for increase of capacity of communication between them and reduction of power consumption in the communication. Communication distances between LSIs can be reduced by stacking the LSIs. However, in a simple stack of logic LSIs and memory LSIs, it is difficult to ensure heat dissipation to cope with increasing heat densities and ensure transmission characteristics for fast communication with the outside of the stacked package. Also required is a connection topology that improves the performance of communication among the stacked LSIs while ensuring the versatility of the LSIs. An external-communication LSI, a memory LSI, and a logic LSI are stacked in this order in a semiconductor package and are interconnected by through silicon vias. Output terminals of multiple stacked LSIs are connected to an input terminal of a through silicon via of the stacked memory LSI and input terminals of multiple stacked LSIs are connected to an output terminal of a through silicon via of the stacked memory LSI, thereby directly connecting both of the external-communication LSI and the logic LSI to a wiring line of the memory LSI. | 01-14-2010 |
20100078635 | SEMICONDUCTOR DEVICE - As the transfer between a processor LSI and a memory has been increasing year by year, there is a demand for increasing the traffic amount and reducing the power required for communication. With this being the condition, a method of stacking LSIs thereby reducing the communication distance is being contemplated. However, the inventors have found that the reduction of cost in the stacking process and the increase in the degree of freedom of selecting the memory LSI to be stacked are required for a simple stacking of processor LSIs and memory LSIs as so far practiced. An external communication LSI including a circuit for performing the communication with the outside of the stacked LSI at a high rate of more than 1 GHz; a processor LSI including a general purpose CPU etc.; and a memory LSI including a DRAM etc. are stacked in this order and those LSIs are connected with one another with a through silicon via to enable a high speed and high volume communication at a shortest path. Further, an interposer for facilitating the connection with the processor LSI is connected to the input terminal of the memory LSI to be stacked thereby increasing the degree of freedom in selecting memories. | 04-01-2010 |
20100078790 | SEMICONDUCTOR DEVICE - In a semiconductor device in which a plurality of memory LSIs and a plurality of processor LSIs are stacked, as the number of stacked layers increase, the communication distance of data between a memory LSI and a processor LSI will increase. Therefore, the parasitic capacitance and parasitic resistance of the wiring used for the communication increase and, as a result of which, the power and speed performance of the entire system will be degraded. At least two or more of the combinations of a processor LSI | 04-01-2010 |
20100083011 | INFORMATION PROCESSING DEVICE - In a configuration provided with, for example, sixty four pieces of processor cores, an on-chip-memory, a bus commonly connected thereto, and others, the processor cores are operated by a power supply with low voltage and a clock with low frequency, and the bus is operated by a power supply with high voltage and a clock with high frequency. Each of the processor cores is provided with a bus interface and a frequency divider in order to absorb a power supply voltage difference and a frequency difference between the bus and each of them. The frequency divider generates the clock with low frequency from the clock with high frequency, and the bus interface is provided with a level shifting function, a data width converting function, a hand shaking function between the bus and the bus interface, and the like. | 04-01-2010 |
20100109096 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device capable of achieving improvement of I/O processing performance, reduction of power consumption, and reduction of cost is provided. Provided is a semiconductor integrated circuit device including, for example, a plurality of semiconductor chips stacked and mounted, the chips having data transceiving terminals bus-connected via through-vias, and data transmission and reception are performed via the bus with using the lowest source voltage among source voltages of internal core circuits of the chips. In accordance with that, a source voltage terminal of an n-th chip to be at the lowest source voltage is connected with source voltage terminals for data transceiving circuits of the other semiconductor chips via through-vias. | 05-06-2010 |
20100117697 | SEMICONDUCTOR INTEGRATED CIRCUIT AND CONTROL METHOD FOR CLOCK SIGNAL SYNCHRONIZATION - There is a need to ensure operation performance of a circuit region under DVFS control at low costs and highly precisely while a power-supply voltage change is made to the region. A first circuit (FVA) uses a first power-supply voltage (VDDA) for operation. A second circuit (NFVA) uses a second power-supply voltage (VDDB) for operation. A clock delay may be adjusted between paths for transmitting a clock to these circuits. When VDDA equals VDDB, a clock is distributed to FVA through a path that does not contain a delay device for phase adjustment. When the power-supply voltage for the FVA region is reduced, a clock is distributed to the FVA region based on a phase equivalent to one or two cycles of the clock displaced. Synchronization control is provided to synchronize clocks (CKAF and CKBF) and ensures operation so that a phase of two clocks to be compared fits in a range of design values while the power-supply voltage for the first circuit is changed. | 05-13-2010 |
20100155921 | SEMICONDUCTOR APPARATUS - The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR | 06-24-2010 |
20100182046 | SEMICONDUCTOR DEVICE - The performance of a whole system is improved by synchronizing communication and computations between stacked computing LSIs. Each of stacked an external communication LSI and a computing LSI has a PLL which multiplies a crystal oscillator clock signal, a clock pulse generator which distributes the clock signal, and flip-flop circuits. The computing LSI has a DLL circuit composed of a clock phase comparator, a delay controller, and a delay chain. In order to synchronize the communication and computations of the external communication LSI and the computing LSI, a synchronization reference clock signal is transmitted from the external communication LSI to the computing LSI via a through-electrode. An internal clock signal of the computing LSI is synchronized with the synchronization reference clock signal from the external communication LSI by the DLL circuit. | 07-22-2010 |
20100200998 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a through-via-hole path of semiconductor chips stacked in N stages, repeater circuits are provided in the respective semiconductor chips. For example, a signal transmitted from an output buffer circuit of the semiconductor chip is transmitted to an input buffer circuit of the semiconductor chip via the repeater circuits of the respective semiconductor chips. The respective repeater circuits can isolate impedances on input sides and output sides, and therefore, a deterioration of a waveform quality accompanied by a parasitic capacitance parasitic on the through-via-hole path of the respective semiconductor chips can be reduced and a high speed signal can be transmitted. | 08-12-2010 |
20110042825 | SEMICONDUCTOR DEVICE - In a semiconductor device in which a plurality of memory LSIs and a plurality of processor LSIs are stacked, as the number of stacked layers increase, the communication distance of data between a memory LSI and a processor LSI will increase. Therefore, the parasitic capacitance and parasitic resistance of the wiring used for the communication increase and, as a result of which, the power and speed performance of the entire system will be degraded. At least two or more of the combinations of a processor LSI | 02-24-2011 |
20110292722 | SEMICONDUCTOR DEVICE - A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogcnidc material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit. | 12-01-2011 |
20110309359 | SEMICONDUCTOR DEVICE - In a test method of stacked LSIs connected by Through Silicon Vias, it is difficult to perform a failure diagnosis by using a conventional device test method to only one side of a silicon wafer, there is a possibility of yield degradation at a stacking time of LSIs, and a plurality of LSIs is connected to one Through Silicon Via so that it is necessary to select and remedy a defective Through Silicon Via taking into account all the device states. These problems cannot be solved by conventional test methods. Therefore, for a device test of a Through Silicon Via through a plurality of chips, a circuit that generates a time-series test pattern having both 0 and 1 values for a delay fault test is added to a circuit portion that transmits data to a Through Silicon Via in the stacked LSIs, and a circuit that receives the test pattern and compares the pattern received with a fixed pattern for a match to detect a defect of a Through Silicon Via is added to a circuit portion that receives data from a Through Silicon Via in the stacked LSIs. | 12-22-2011 |
20120135548 | SEMICONDUCTOR DEVICE - A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit. | 05-31-2012 |
20120187993 | Semiconductor Integrated Circuit and Control Method for Clock Signal Synchronization - There is a need to ensure operation performance of a circuit region under DVFS control at low costs and highly precisely while a power-supply voltage change is made to the region. A first circuit (FVA) uses a first power-supply voltage (VDDA) for operation. A second circuit (NFVA) uses a second power-supply voltage (VDDB) for operation. A clock delay may be adjusted between paths for transmitting a clock to these circuits. When VDDA equals VDDB, a clock is distributed to FVA through a path that does not contain a delay device for phase adjustment. When the power-supply voltage for the FVA region is reduced, a clock is distributed to the FVA region based on a phase equivalent to one or two cycles of the clock displaced. Synchronization control is provided to synchronize clocks (CKAF and CKBF) and ensures operation so that a phase of two clocks to be compared fits in a range of design values while the power-supply voltage for the first circuit is changed. | 07-26-2012 |
20120217620 | SEMICONDUCTOR APPARATUS - The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR | 08-30-2012 |
20120280231 | SEMICONDUCTOR DEVICE, AND TEST METHOD FOR SAME - It has been difficult to carry out a test and an analysis with respect to combinational logic circuits mounted across plural chips, and therefore, there is provided a flip-flop ( | 11-08-2012 |
20130079905 | Human-Operated Working Machine System - In a human-operated working machine system made up of a working machine including an actuator and an operating device, various operations for target objects having various hardnesses and shapes are achieved at a speed not giving stress to an operator. To this end, the working machine has a control structure in which a control program corresponding to an action content is executed with both of displacement information with respect to the working machine inputted from the operating device and information from a sensor of the working machine being taken as inputs. Furthermore, the operating device has a simulator that predicts an action of the working machine so as to quickly provide image information and tactile information regarding the action of the working machine to the operator. | 03-28-2013 |