Patent application number | Description | Published |
20120140970 | DOCKING STATION HAVING STRUCTURE FOR SOUND AMPLIFICATION AND SOUND QUALITY ENHANCEMENT - A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power. | 06-07-2012 |
20120261542 | STAND DEVICE FOR MOBILE TERMINAL - A stand device for a mobile terminal is provided. The device includes a body and at least one slope unit. The body has a seat and a lower side. The seat seats the mobile terminal thereon. The lower side of the body is curved so that the body may be tilted. The at least one slope unit tilts the body in a relevant direction by moving a center of mass. | 10-18-2012 |
20130279731 | DOCKING STATION HAVING STRUCTURE FOR SOUND AMPLIFICATION AND SOUND QUALITY ENHANCEMENT - A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power. | 10-24-2013 |
Patent application number | Description | Published |
20090020804 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method for fabricating the same. The semiconductor device includes a gate pattern formed on a semiconductor substrate, a first impurity-doped region formed in the substrate on one side of the gate pattern and a second impurity-doped region formed in the substrate on the other side of the gate pattern, a salicide shielding film pattern partially covering either the first impurity-doped region or the second impurity-doped region, an insulating film formed on the semiconductor substrate, the insulating film including a first hole which exposes the salicide shielding film pattern, and a second hole which partially exposes the first impurity-doped region or the second impurity-doped region that is not covered by the salicide shielding film pattern, and a first line coming in contact with the salicide shielding film pattern through the first hole. | 01-22-2009 |
20090026624 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING METAL LINE THEREOF - A method for manufacturing a metal line of a semiconductor device includes forming an interlayer dielectric layer over the whole surface of a semiconductor substrate including a first metal line. A plurality of trenches are formed in trench areas each having a predetermined depth from a surface thereof by selectively removing portions of the interlayer dielectric layer. A first metal film is formed in the plurality of trenches. A first photoresist pattern is formed over the interlayer dielectric layer exposing contact areas and the first metal line. Via holes are formed in the contact areas by etching the interlayer dielectric layer using the first photoresist pattern and the first metal film as masks. A second metal film is formed in the via holes. Accordingly, misalignment of masks caused during formation of the metal line can be restrained, thereby minimizing the defect rate and improving yield. | 01-29-2009 |
20090044164 | Method for Placing Dummy Patterns in a Semiconductor Device Layout - Disclosed is a method for placing dummy patterns in a semiconductor device layout. More specifically, the method places the dummy patterns densely between main patterns in accordance with a sequence and configuration. The method includes placing vertical dummies having a greater length than width in a region other than main patterns to form a first layout, removing the vertical dummies within a first distance from the main patterns to form a second layout, placing horizontal dummies having a greater length than width in a vacant space of the second layout to form a third layout, and removing the horizontal dummies within a second distance from the main patterns in the third layout. The method prevents and/or inhibits pattern deformation. | 02-12-2009 |
20090057904 | COPPER METAL LINE IN SEMICONDCUTOR DEVICE AND METHOD OF FORMING SAME - A Cu line in a semiconductor device and method of forming same are disclosed. The method may include forming an insulating interlayer on a semiconductor substrate, forming a contact hole and a trench in the insulating interlayer in sequence, forming a short-circuit preventing layer on the insulating interlayer including the contact hole and the trench, forming a spacer on a sidewall of the trench by etching the short-circuit preventing layer, forming a Cu line layer over the semiconductor substrate including the contact hole and the trench, planarizing the Cu line layer by CMP, and forming a Cu-diffusion preventing capping layer over the semiconductor substrate including the Cu line layer. | 03-05-2009 |
20090294862 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF - Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same. The non-volatile semiconductor memory device includes a semiconductor substrate including a plurality of active regions, gate electrodes formed over the respective active regions of the semiconductor substrate, gate spacers formed over both sides of each of the gate electrodes, common source/drain regions formed on the surface of the semiconductor substrate at both sides of the gate electrode including the gate spacers, an interlayer dielectric formed over the whole surface of a resultant structure including the substrate, gate electrodes, gate spacers and common source/drain regions, and contact plugs penetrating the interlayer dielectric, and connecting the common source/drain regions to a data line, wherein the contact plugs are made from a material which becomes electrically conductive when in contact with light and becomes non-conductive when out of contact with light. | 12-03-2009 |