Patent application number | Description | Published |
20100307576 | Photovoltaic device and method for manufacturing the same - The present invention relates to a photovoltaic device and a method for manufacturing the same. The photovoltaic device includes: a first semiconductor layer; a second semiconductor layer, disposed on the first semiconductor layer; a first electrode layer, connected to the first semiconductor layer; a second electrode layer, connected to the second semiconductor layer, in which the second electrode layer has an open area to expose the second semiconductor layer; and a low reflective conductive film, disposed in the open area and connected to the second electrode layer and the second semiconductor layer, in which the resistivity of the low reflective conductive film is less than or equal to that of the second semiconductor layer. Accordingly, the photovoltaic device provided by the present invention exhibits effectively reduced parasitic series resistance effect and thereby improved photoelectric conversion efficiency. | 12-09-2010 |
20120055542 | Photovoltaic cell - A structure of photovoltaic cell for improving conversion efficiency has been disclosed, including a first bandgap layer, a second bandgap layer, a third bandgap layer, a back electrode and a finger electrode, wherein the first bandgap layer is a wafer while the second bandgap layer is a semiconductor film with a thickness of 1˜100 Å and a greater bandgap than one of the first bandgap layer, and the third bandgap layer comprises wide bandgap materials and a greater bandgap than one of the second bandgap layer. Thereby, the lattice mismatch of heterostructures between the first bandgap layer and the third bandgap layer may be solved by the second bandgap layer. Also, the carrier recombination within devices may be decreased and the output photocurrent may thus be enhanced to improve energy conversion efficiency. | 03-08-2012 |
Patent application number | Description | Published |
20090137104 | Method of fabricating polycrystalline semiconductor - Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the amorphous silicon layer or the substrate, and applying RTA (Rapid Thermal Annealing) for light illuminating process, then the light converted into heat by the metal plate will further be conducted to the amorphous silicon layer to realize rapid thermal crystallization. Thus the poly-Si layer of the present invention is obtained. | 05-28-2009 |
20090283138 | HIGH PERFORMANCE OPTOELECTRONIC DEVICE - An optoelectronic device is provided. The optoelectronic device includes a P-type semiconductor substrate, an N-type transparent amorphous oxide semiconductor (TAOS) layer located on a surface of the P-type semiconductor substrate, and a rear electrode on another surface of the P-type semiconductor substrate. The N-type TAOS layer constructs a portion of a P-N diode, and serves as a window layer and a front electrode layer. | 11-19-2009 |
20110168250 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell including a photovoltaic layer, a first electrode layer, a second electrode layer, an insulating layer and a light-transparent conductive layer is provided. The photovoltaic layer has a first surface and a second surface. The first electrode layer having at least one gap is disposed on the first surface, wherein the at least one gap exposes a portion of the photovoltaic layer. The second electrode layer is disposed on the second surface. The insulating layer having a plurality of pores is located on the photovoltaic layer exposed by the at least one gap, wherein the holes expose a portion of the photovoltaic layer. The light-transparent conductive layer covers the insulating layer and is connected with the first electrode layer. The transparent electrode is connected with the photovoltaic layer through at least a part of the pores. A method of fabricating a solar cell is also provided. | 07-14-2011 |
20120258568 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A method for manufacturing a solar cell including a photovoltaic layer, a first electrode layer, a second electrode layer, an insulating layer and a light-transparent conductive layer is provided. The photovoltaic layer has a first surface and a second surface. The first electrode layer having at least one gap is disposed on the first surface, wherein the at least one gap exposes a portion of the photovoltaic layer. The second electrode layer is disposed on the second surface. The insulating layer having a plurality of pores is located on the photovoltaic layer exposed by the at least one gap, wherein the holes expose a portion of the photovoltaic layer. The light-transparent conductive layer covers the insulating layer and is connected with the first electrode layer. The transparent electrode is connected with the photovoltaic layer through at least a part of the pores. | 10-11-2012 |
20140159187 | ANTIREFLECTION SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of antireflection substrate structure includes: providing a silicon wafer having a first rough surface; forming an antireflection optical film on the silicon wafer, wherein the antireflection optical film conformally overlays the first rough surface; performing a surface treatment on the antireflection optical film so that the antireflection optical film has a hydrophilic surface, and the hydrophilic surface is relatively far away from the silicon wafer; dropping a colloidal solution on the hydrophilic surface of the antireflection optical film, wherein the colloidal solution includes a solution and multiple nano-balls and the nano-balls are adhered onto the hydrophilic surface; and performing an etching process on the hydrophilic surface of the antireflection optical film by taking the nano-balls as an etching mask so as to form a second rough surface, wherein the roughness of the second rough surface is different from the roughness of the first rough surface. | 06-12-2014 |
20160079449 | ANTIREFLECTION SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of antireflection substrate structure includes: providing a silicon wafer having a first rough surface; forming an antireflection optical film on the silicon wafer, wherein the antireflection optical film conformally overlays the first rough surface; performing a surface treatment on the antireflection optical film so that the antireflection optical film has a hydrophilic surface, and the hydrophilic surface is relatively far away from the silicon wafer; dropping a colloidal solution on the hydrophilic surface of the antireflection optical film, wherein the colloidal solution includes a solution and multiple nano-balls and the nano-balls are adhered onto the hydrophilic surface; and performing an etching process on the hydrophilic surface of the antireflection optical film by taking the nano-balls as an etching mask so as to form a second rough surface, wherein the roughness of the second rough surface is different from the roughness of the first rough surface. | 03-17-2016 |