Kommera
Swaroop Kommera, Milpitas, CA US
Patent application number | Description | Published |
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20140158193 | STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS - Fabrication methods and structures relating to back contact solar cells having patterned emitter and non-nested base regions are provided. | 06-12-2014 |
20150068592 | SOLAR CELL METALLIZATION - An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar. | 03-12-2015 |
Swaroop Kommera, San Jose, CA US
Patent application number | Description | Published |
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20140147944 | RESISTANCE COMPONENT EXTRACTION FOR BACK CONTACT BACK JUNCTION SOLAR CELLS - Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided. | 05-29-2014 |
Swaroop K. Kommera, Corvallis, OR US
Patent application number | Description | Published |
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20090020511 | Ablation - Embodiments of a method of ablation are disclosed. | 01-22-2009 |
20090053898 | Formation of a slot in a silicon substrate - A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate ( | 02-26-2009 |
20090096845 | PRINT HEAD DIE SLOT RIBS - Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot. The ribs are recessed from one or both sides of the die. | 04-16-2009 |
20110069120 | PRINT HEAD SLOT RIBS - A print head die ( | 03-24-2011 |