Patent application number | Description | Published |
20080284481 | Cross-point latch and method of operating the same - Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines. | 11-20-2008 |
20090020399 | Electromechanical switch and method of manufacturing the same - Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene. | 01-22-2009 |
20090032795 | Schottky diode and memory device including the same - A Schottky diode and a memory device including the same are provided. The Schottky diode includes a first metal layer and an Nb-oxide layer formed on the first metal layer. | 02-05-2009 |
20090251267 | Inductors and methods of operating inductors - An inductor may include a conductive line including a material in which an electrical resistance varies depending on an electric field applied to the material and/or first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. A method of operating an inductor may include applying current to a conductive line of the inductor. The conductive line may include a material in which an electrical resistance may vary depending on an electric field applied to the material. The current may be applied to the conductive line via first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. | 10-08-2009 |
20090294759 | Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure - Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer. | 12-03-2009 |
20100090759 | Quantum interference transistors and methods of manufacturing and operating the same - A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed. | 04-15-2010 |
20100157408 | Display devices - A display device may include a substrate, a thin film layer formed on the substrate and/or having a light absorptance that varies according to an electric field applied to the thin film layer, and/or electrodes disposed to apply the electric field to the thin film layer and/or configured to change the electric field applied to the thin film layer. | 06-24-2010 |
20110089995 | Graphene device and method of manufacturing the same - Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel. | 04-21-2011 |
20110092054 | Methods for fixing graphene defects using a laser beam and methods of manufacturing an electronic device - Methods of fixing graphene using a laser beam and methods of manufacturing an electronic device are provided, the method of fixing graphene includes fixing a defect of a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon. | 04-21-2011 |
20110108521 | Methods of manufacturing and transferring larger-sized graphene - Example embodiments relate to methods of manufacturing and transferring a larger-sized graphene layer. A method of transferring a larger-sized graphene layer may include forming a graphene layer, a protection layer, and an adhesive layer on a substrate and removing the substrate. The graphene layer may be disposed on a transferring substrate by sliding the graphene layer onto the transferring substrate. | 05-12-2011 |
20110108609 | Methods of fabricating graphene using alloy catalyst - Methods of fabricating graphene using an alloy catalyst may include forming an alloy catalyst layer including nickel on a substrate and forming a graphene layer by supplying hydrocarbon gas onto the alloy catalyst layer. The alloy catalyst layer may include nickel and at least one selected from the group consisting of copper, platinum, iron and gold. When the graphene is fabricated, a catalyst metal that reduces solubility of carbon in Ni may be used together with Ni in the alloy catalyst layer. An amount of carbon that is dissolved may be adjusted and a uniform graphene monolayer may be fabricated. | 05-12-2011 |
20110149670 | Spin valve device including graphene, method of manufacturing the same, and magnetic device including the spin valve device - Provided are a spin valve device including graphene, a method of manufacturing the spin valve device, and a magnetic device including the spin valve device. The spin valve device may include at least one of a graphene sheet or a hexagonal boron nitride (h-BN) sheet between a lower magnetic layer and an upper magnetic layer. The graphene sheet may have a single layer structure or a multilayer structure. The spin valve device may further include a spacer between the lower magnetic layer and the graphene sheet. The spin valve device may further include a spacer between the graphene sheet and the upper magnetic layer. | 06-23-2011 |
20110210314 | Graphene electronic device and method of fabricating the same - A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode. | 09-01-2011 |
20110313194 | Graphene substituted with boron and nitrogen , method of fabricating the same, and transistor having the same - Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B—N) precursor. | 12-22-2011 |
20120075008 | GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME - The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel. | 03-29-2012 |
20120080658 | Graphene electronic device and method of fabricating the same - A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer. | 04-05-2012 |
20120112250 | Semiconductor Device Including Graphene And Method Of Manufacturing The Semiconductor Device - In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer. | 05-10-2012 |
20120132893 | Graphene Electronic Devices - A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer. | 05-31-2012 |
20120138903 | Graphene Substrates And Methods Of Fabricating The Same - The graphene substrate may include a metal oxide film on a substrate, and a graphene layer on the metal oxide film. The concentration of oxygen in the metal oxide film may be gradually reduced from the substrate towards the graphene layer, and the graphene layer may be formed directly on the metal oxide film. | 06-07-2012 |
20120168722 | Graphene Electronic Device Including A Plurality Of Graphene Channel Layers - Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers. | 07-05-2012 |
20120175595 | Graphene Electronic Device And Method Of Fabricating The Same - A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode. | 07-12-2012 |
20120256167 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer. | 10-11-2012 |
20130048948 | INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER - Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer. | 02-28-2013 |
20130048951 | GRAPHENE SWITCHING DEVICE HAVING TUNABLE BARRIER - According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer. | 02-28-2013 |
20130065022 | METHOD OF TRANSFERRING GRAPHENE USING TRENCH AND SUBSTRATE FOR RECEIVING GRAPHENE - A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate. | 03-14-2013 |
20130075700 | Electrode Structure Including Graphene And Field Effect Transistor Having The Same - According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure. | 03-28-2013 |
20130101247 | OPTICAL MODULATOR INCLUDING GRAPHENE - An optical modulator includes a first graphene and a second graphene on an upper surface of a semiconductor layer, a first electrode on the first graphene, and a second electrode on the second graphene. Respective side surfaces of the first graphene and the second graphene are separated from each other. A first ridge portion of the semiconductor layer and a second ridge portion on the second graphene constitute an optical waveguide, and the first and second graphenes are on a center portion of the optical waveguide in a vertical direction to the semiconductor. | 04-25-2013 |
20130119349 | GRAPHENE TRANSISTOR HAVING AIR GAP, HYBRID TRANSISTOR HAVING THE SAME, AND METHODS OF FABRICATING THE SAME - A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode. | 05-16-2013 |
20130175506 | THREE-DIMENSIONAL GRAPHENE SWITCHING DEVICE - A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate. | 07-11-2013 |
20130203222 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode. | 08-08-2013 |
20130313512 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer. | 11-28-2013 |
20140014905 | FIELD EFFECT TRANSISTOR USING GRAPHENE - According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode. | 01-16-2014 |
20140021445 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer. | 01-23-2014 |
20140097403 | TUNNELING FIELD-EFFECT TRANSISTOR INCLUDING GRAPHENE CHANNEL - According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate. | 04-10-2014 |
20140097404 | MEMORY DEVICES INCLUDING GRAPHENE SWITCHING DEVICES - A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element. | 04-10-2014 |
20140117313 | GRAPHENE SWITCHING DEVICE HAVING TUNABLE BARRIER - According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode. | 05-01-2014 |
20140131626 | GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME - Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor. | 05-15-2014 |
20140141600 | METHODS OF PREPARING GRAPHENE AND DEVICE INCLUDING GRAPHENE - A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film. | 05-22-2014 |
20140158989 | ELECTRONIC DEVICE INCLUDING GRAPHENE - According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 10 | 06-12-2014 |
20140231752 | GRAPHENE DEVICE AND ELECTRONIC APPARATUS - A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor. | 08-21-2014 |
20140231820 | MEMORY DEVICE USING GRAPHENE AS CHARGE-TRAP LAYER AND METHOD OF OPERATING THE SAME - A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges. | 08-21-2014 |
20140299944 | GRAPHENE DEVICES AND METHODS OF FABRICATING THE SAME - A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the first electrode, the graphene layer, and the semiconductor substrate. | 10-09-2014 |
20150056758 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer. | 02-26-2015 |