Patent application number | Description | Published |
20080197452 | Group III nitride semiconductor substrate - A Group III nitride semiconductor substrate is formed of a Group III nitride single crystal, and has a diameter of not less than 25.4 mm and a thickness of not less than 150 μm. The substrate satisfies that a ratio of Δα/α is not more than 0.1, where α is a thermal expansion coefficient calculated from a temperature change in outside dimension of the substrate, and Δα is a difference (α−αL) between the thermal expansion coefficient α and a thermal expansion coefficient αL calculated from a temperature change in lattice constant of the substrate. | 08-21-2008 |
20080315245 | Nitride-based semiconductor substrate and semiconductor device - A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2×10 | 12-25-2008 |
20100133657 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal. | 06-03-2010 |
20100200955 | Group III-V nitride based semiconductor substrate and method of making same - A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm | 08-12-2010 |
20100233870 | Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate - A method of fabricating a group III nitride semiconductor single crystal includes preparing a seed substrate which includes group III nitride semiconductor and has a crystal growth face of single index plane, and epitaxially growing the group III nitride semiconductor single crystal on the crystal growth face, wherein the group III nitride semiconductor single crystal is epitaxially grown while being surrounded by a plurality of crystal surfaces including low-index planes spontaneously formed, and the low-index planes have a structure that each of plane indices showing a crystal plane is not more than 3. | 09-16-2010 |
20100300423 | Compound semiconductor substrate production method - A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9 μm. | 12-02-2010 |
20110248281 | Nitride semiconductor substrate, production method therefor and nitride semiconductor device - A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface. | 10-13-2011 |
20120104557 | Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template - A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor. | 05-03-2012 |
20130069075 | NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD, NITRIDE SEMICONDUCTOR EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE - A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal. | 03-21-2013 |
20140196660 | NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD - A nitride semiconductor crystal producing method, includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal. | 07-17-2014 |
Patent application number | Description | Published |
20090326053 | DIAGNOSTIC USES OF FOLLISTATIN-LIKE 1 - The present invention generally relates to methods, systems and computer readable media for the diagnosis and/or prognosis of a cardiac stress and/or skeletal muscle stress in a subject. In particular, in one embodiment, the methods, systems and computer readable media detect a level of Fstl expression, such as Fstl1 polypeptide or mRNA expression in a biological sample obtained from a subject, where a high level relative to a reference Fstl expression level is indicative of a subject having, or is at risk of cardiac stress and/or skeletal muscle stress. In such embodiments, the method futher comprises administering or undertaking an appropriate therapy in a subject identified to have or be at risk of cardiac stress and/or skeletal muscle stress. Another aspect of the present invention relates to the methods, systems and computer readable media detect a level of Fstl expression, such as Fstl1 polypeptide or mRNA expression in a biological sample obtained from a subject where a low level relative to a reference Fstl expression level is indicative of a subject having, or is at risk of diabetes and/or metabolic dysfunction. In such embodiments, the method futher comprises administering or undertaking an appropriate therapy in a subject identified to have or be at risk of diabetes and/or metabolic dysfunction. | 12-31-2009 |
20100227817 | METABOLIC AND CARDIOPROTECTION BY THE MYOKINE FOLLISTATIN-LIKE 1 POLYPEPTIDE - Described herein are methods and compositions related to the discovery that the Follistatin-like 1 protein (Fstl-1) has metabolic and cardioprotective effects in vivo. Fstl-1 and portions and derivatives or variants thereof can be used to treat or prevent metabolic diseases or disorders and to treat or prevent cardiac damage caused by interrupted cardiac muscle blood supply. | 09-09-2010 |
20130035282 | METABOLIC AND CARDIOPROTECTION BY THE MYOKINE FOLLISTATIN-LIKE 1 POLYPEPTIDE - Described herein are methods and compositions related to the discovery that the Follistatin-like 1 protein (Fstl-1) has metabolic and cardioprotective effects in vivo. Fstl-1 and portions and derivatives or variants thereof can be used to treat or prevent metabolic diseases or disorders and to treat or prevent cardiac damage caused by interrupted cardiac muscle blood supply. | 02-07-2013 |
Patent application number | Description | Published |
20100028605 | SUBSTRATE FOR EPITAXIAL GROWTH - A chamfering part is partially formed on the backside, opposite to the front side of a substrate on which epitaxial growth is performed. When a size of the substrate is set at x (mm), preferably length of the chamfering part applied to the backside of the substrate is set at 2 mm or more and 0.15x (mm) or less. In addition, when the substrate is placed on a flat surface, with the front side turned up, preferably height and depth of a gap formed between the substrate and the flat surface are set at 0.2 mm or more. | 02-04-2010 |
20110147759 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - A Group III nitride semiconductor substrate is provided, with diameter of 25 mm or more and thickness of 250 μm or more, wherein in at least an outer edge side part of an outer edge part within 5 mm from an outer edge of the group III nitride semiconductor substrate, stress within a main surface of the group III nitride semiconductor substrate works as a tensile stress, with the tensile stress becoming relatively greater compared to that of a center side part from the outer edge side part of the group III nitride semiconductor substrate. | 06-23-2011 |
20110168082 | MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - A manufacturing method of a group III nitride semiconductor crystal is provided, comprising: the step of preparing a seed crystal; and the convex surface growing step of growing the group III nitride semiconductor crystal, with a growth surface of the group III nitride semiconductor crystal constituted only by a plurality of surfaces not vertical to a growth direction, and the growth surface constituted of the plurality of surfaces formed into a convex shape as a whole. | 07-14-2011 |