Owatari
Akira Owatari, Tokyo JP
Patent application number | Description | Published |
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20100075498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND PROCESSING LIQUID - A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects. | 03-25-2010 |
20100105154 | METHOD AND APPARATUS FOR PROCESSING SUBSTRATE - A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate. | 04-29-2010 |
Akira Owatari, Sacramento, CA US
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20140299476 | ELECTROPLATING METHOD - An electroplating method is disclosed. The method includes preparing a substrate having via holes in a surface thereof, performing a pretreatment of the substrate surface by immersing the substrate in a pretreatment liquid containing a plating suppressor to adsorb the plating suppressor onto the substrate surface, immersing the pretreated substrate in a plating solution containing a plating suppressor and a plating accelerator to replace the pretreatment liquid, attached to the substrate surface including interior surfaces of the via holes, with the plating solution, and then electroplating the substrate surface to fill the via holes with metal. | 10-09-2014 |
Masakazu Owatari, Aichi-Ken JP
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20090271081 | CONTROL DEVICE FOR AUTOMATIC TRANSMISSION - A control device for an automatic transmission is disclosed wherein a shift point depending on a variation in vehicle acceleration is modified on a real time basis in accordance with not only a corrected result on a shift point depending on piece-to-piece variations of automatic transmissions, but also actual acceleration for shortening a time required for learning with high precision with no need to be matched. Shift point real-time modifying means is provided for modifying the altered shift point based on a value of a ratio between a value of actual engine-rotation acceleration at an upshift-determining timing during a power-on running and a value of reference engine-rotation acceleration obtained by substituting a value of actual engine-rotation acceleration to a value for a reference running state having no impact on acceleration of a vehicle, and a target maximum engine rotation speed. | 10-29-2009 |
Masakazu Owatari, Toyota-Shi JP
Patent application number | Description | Published |
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20090018757 | Control device for vehicle - The present invention relates to a control device for a vehicle, having an engine | 01-15-2009 |
Masakazu Owatari, Aichi-Gun JP
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20130233111 | CONTROL APPARATUS FOR AUTOMATIC TRANSMISSION - A control apparatus for an automatic transmission including three frictional engagement elements is configured to set engagement pressures of first and second frictional engagement elements at the time when a predetermined shift speed is established such that a torque capacity of a third frictional engagement element becomes smaller than torque capacities of the first and second frictional engagement elements in the case where an engagement pressure is generated in the third frictional engagement element at the time when the predetermined shift speed is established. | 09-12-2013 |
Masakazu Owatari, Nagakute-Shi JP
Patent application number | Description | Published |
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20130110360 | SHIFT CONTROL SYSTEM AND SHIFT CONTROL METHOD | 05-02-2013 |