Patent application number | Description | Published |
20080197439 | Semiconductor Device And Method For Manufacturing Same - A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an n | 08-21-2008 |
20090032897 | Semiconductor Device and Method for Its Manufacture - In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes. | 02-05-2009 |
20090206438 | Semiconductor component - A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current. | 08-20-2009 |
20100237456 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE - A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos. | 09-23-2010 |
20100301387 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS PRODUCTION - A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers. | 12-02-2010 |
20110212602 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same. | 09-01-2011 |
20120181652 | SEMICONDUCTOR SYSTEM AND METHOD FOR MANUFACTURING SAME - A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n | 07-19-2012 |
20120187498 | Field-Effect Transistor with Integrated TJBS Diode - A semiconductor component includes at least one MOS field-effect transistor and a trench junction barrier Schottky diode (TJBS) configured as a monolithically integrated structure. The breakdown voltages of the MOS field-effect transistor and of the trench junction barrier Schottky diode (TJBS) are selected such that the MOS field-effect transistor can be operated in breakdown mode. | 07-26-2012 |
20120187521 | SCHOTTKY DIODE HAVING A SUBSTRATE P-N DIODE - A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode being suited, e.g., as a Zener diode having a breakdown voltage of approximately 20 V, for use in motor-vehicle generator systems. In this context, the TJBS-Sub-PN is made up of a combination of a Schottky diode, an epitaxial p-n diode and a substrate p-n diode, and the breakdown voltage of the substrate p-n diode (BV_pn) is less than the breakdown voltage of the Schottky diode (BV_schottky) and the breakdown voltage of the epitaxial p-n diode (BV_epi). | 07-26-2012 |
20120241897 | SEMICONDUCTOR SYSTEM INCLUDING A SCHOTTKY DIODE - A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown. | 09-27-2012 |
20120256196 | SCHOTTKY DIODE - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation. | 10-11-2012 |
20120280353 | PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS - A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode. | 11-08-2012 |
20130161779 | SUPER TRENCH SCHOTTKY BARRIER SCHOTTKY DIODE - A Schottky diode includes an n | 06-27-2013 |
20130207222 | SUPER-JUNCTION SCHOTTKY OXIDE PIN DIODE HAVING THIN P-TYPE LAYERS UNDER THE SCHOTTKY CONTACT - A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n | 08-15-2013 |
20140001593 | Semiconductor Arrangement Having a Schottky Diode | 01-02-2014 |
20140021509 | SEMICONDUCTOR CONFIGURATION HAVING REDUCED ON-STATE RESISTANCE - A semiconductor configuration, which includes an epitaxial layer of the first conductivity type disposed on a highly doped substrate of first conductivity type; a layer of a second conductivity type introduced into the epitaxial layer; and a highly doped layer of the second conductivity type provided at the surface of the layer of the second conductivity type. Between the layer of the second conductivity type and the highly doped substrate of the first conductivity type, a plurality of Schottky contacts, which are in the floating state, are provided mutually in parallel in the area of the epitaxial layer. | 01-23-2014 |
20140035090 | TRENCH SCHOTTKY DIODE - A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations. | 02-06-2014 |
20140239435 | SUPER-JUNCTION SCHOTTKY PIN DIODE - A semiconductor chip has an n | 08-28-2014 |
20150028445 | HIGH-VOLTAGE TRENCH JUNCTION BARRIER SCHOTTKY DIODE - In a Schottky diode having an n | 01-29-2015 |
20150041830 | SCHOTTKY DIODE - A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation. | 02-12-2015 |
20150091125 | SEMICONDUCTOR ARRAY HAVING TEMPERATURE-COMPENSATED BREAKDOWN VOLTAGE - A semiconductor array is described whose breakdown voltage has only a very low temperature coefficient or none at all and therefore there is little or no temperature-dependent voltage rise. The voltage limitation is achieved by a punch-through effect. | 04-02-2015 |