Patent application number | Description | Published |
20100213415 | METAL OXIDE FINE PARTICLES, SILICONE RESIN COMPOSITION AND USE THEREOF - The present invention relates to metal oxide fine particles treated with a surface-treating agent containing a silicon compound having an alkenyl group having 2 to 20 carbon atoms, a silicone resin composition obtained by reacting the metal oxide fine particles with an organohydrogensiloxane, a photo semiconductor element-encapsulating material containing the silicone resin composition, and a photosemiconductor device including a photosemiconductor element encapsulated with the silicone resin composition or the photosemiconductor element-encapsulating material. | 08-26-2010 |
20110186893 | OPTICAL-SEMICONDUCTOR DEVICE - The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer, on an optical-semiconductor element-mounting substrate so that the encapsulating resin layer faces the optical-semiconductor element-mounting substrate; followed by compression-molding, in which the wavelength conversion layer is present on an upper part of a molded body in which the optical-semiconductor element is embedded therein, but is not present on a side surface of the molded body. | 08-04-2011 |
20120153345 | OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to an optical semiconductor device including: a substrate having mounted thereon an LED chip; an encapsulation resin layer embedding the LED chip; an inorganic high-heat conductive layer; and a wavelength conversion layer containing an inorganic phosphor powder, in which the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly. | 06-21-2012 |
20140057374 | OPTICAL-SEMICONDUCTOR DEVICE - The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer, on an optical-semiconductor element-mounting substrate so that the encapsulating resin layer faces the optical-semiconductor element-mounting substrate; followed by compression-molding, in which the wavelength conversion layer is present on an upper part of a molded body in which the optical-semiconductor element is embedded therein, but is not present on a side surface of the molded body. | 02-27-2014 |
Patent application number | Description | Published |
20090043163 | MEDICAL APPARATUS AND MEDICAL SYSTEM PROVIDED WITH THE SAME - In the present invention, an endoscope apparatus has an identification unit which identifies the classification on the basis of scope ID information of an endoscopic scope, a storage unit which stores information regarding processing to be executed according to the classification of the endoscopic scope (a first SOP), and a control unit which reads a second SOP corresponding to the classification from the first SOP stored in the storage section on the basis of the result of the identification by the identification unit and sets the second SOP, and which, in the case where the information corresponding to the classification does not exist, performs switching so that predetermined information (a third SOP) is read from the first SOP stored in the storage unit and sets the predetermined information. | 02-12-2009 |
20090188431 | Substrate processing apparatus and method for manufacturing a semiconductor device - A CVD device has a reaction furnace ( | 07-30-2009 |
20100201055 | Substrate treating apparatus and method for manufacturing semiconductor device - A support section ( | 08-12-2010 |
20110131804 | Substrate treating apparatus and method for manufacturing semiconductor device - A support section ( | 06-09-2011 |
20120006268 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A CVD device has a reaction furnace ( | 01-12-2012 |
20130215246 | MEDICAL SYSTEM AND COMMUNICATION METHOD FOR MEDICAL SYSTEM, MEDICAL IMAGE CAPTURING APPARATUS, AND SERVER - The present invention is to provide a medical system including a medical image capturing apparatus and a server that records a medical image, and the medical system includes: first and second examination status storage unit for storing an examination status of under examination or examination complete in the medical image capturing apparatus in each of the medical image capturing apparatus and the server; first control unit provided with a function of notifying the server of the examination status in the medical image capturing apparatus and a function of shifting the medical image capturing apparatus to a status of examination complete according to an instruction from the server; and second control unit for generating the instruction that changes from the server the examination status of the medical image capturing apparatus according to information of the examination status received from the medical image capturing apparatus and a status of the server. | 08-22-2013 |
Patent application number | Description | Published |
20090017638 | Substrate processing apparatus and method for manufacturing semiconductor device - It is intended to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of suppressing formation of a film inside a nozzle and extending a replacement or maintenance cycle of the nozzle, thereby realizing improvement in operation rate of the apparatus. A substrate processing apparatus comprising: a reaction container for performing a processing for generating a film containing a plurality of elements on a substrate; a heater for heating an inside of the reaction container; at least one nozzle that is provided inside the reaction container in such a fashion that at least a part thereof is opposed to the heater for supplying a first gas containing at least one of the plurality of elements forming the film and capable of depositing a film by itself into the reaction container; and a circulation pipe that is provided in such a fashion as to cover at least the part of the nozzle opposed to the heater for supplying a second gas containing at least one of the plurality of elements forming the film and not capable of depositing a film by itself into the reaction container after circulating the second gas thereinside. | 01-15-2009 |
20090087964 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber. | 04-02-2009 |
20090233452 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which is in proximity to the inner wall of the processing chamber and which corresponds to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber. | 09-17-2009 |
20090239387 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein the hydrogen-containing gas is supplied from a plurality of locations of a region corresponding to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber. | 09-24-2009 |
20120064730 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates ( | 03-15-2012 |
20130068159 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates. | 03-21-2013 |
20140315393 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber. | 10-23-2014 |
Patent application number | Description | Published |
20130100515 | SEMICONDUCTOR DEVICE - Provided is technique for a semiconductor device including a substrate and a tilting plate which is tiltable relatively to the substrate, the technique being capable of effectively suppressing warpage of the tilting plate. The semiconductor device of the present specification includes a substrate and a tilting plate which is tiltable relatively to the substrate. In the semiconductor device, a rib formed of wavelike portions where a plate thickness is substantially uniform is formed on the tilting plate. | 04-25-2013 |
20150277106 | MEMS DEVICE - The MEMS device includes MEMS units and a circuit board. Each MEMS unit includes a substrate, a movable part with a movable electrode, a driving electrode, a diagnosis electrode, a plurality of through electrodes, and a plurality of MEMS side electrical contacts. The circuit board includes a plurality of circuit side electrical contacts, a drive circuit that is connected electrically with the driving electrode and the movable electrode through the circuit side electrical contact, the MEMS side electrical contact, and the through electrode, and a diagnosis circuit that is connected electrically with the diagnosis electrode and the movable electrode through the circuit side electrical contact, the MEMS side electrical contact, and the through electrode. The diagnosis electrodes of at least two MEMS units are connected electrically with each other, and are connected to a same MEMS side electrical contact through a same through electrode. | 10-01-2015 |
20150325538 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - The method for producing a semiconductor device includes: forming an opening in an area of at least one of the complementary metal-oxide semiconductor wafer that includes a first part and the other semiconductor wafer that includes a second part, the opening terminating within the area and not penetrating through the area, the area including corresponding one of the first part and the second part and an outer peripheral part of the corresponding one of the first part and the second part; forming a conduction hole within the first part, the conduction hole communicating with a metallic material in the complementary metal-oxide semiconductor wafer; arranging a first joining material inside the conduction hole and on the first part, and a second joining material on the second part; and joining the arranged first joining material and the arranged second joining material. | 11-12-2015 |
20160043066 | APPARATUS AND METHOD OF MANUFACTURING THE SAME - Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer. | 02-11-2016 |