Patent application number | Description | Published |
20080207917 | POLYMER HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE - A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage. | 08-28-2008 |
20080226896 | NANOPARTICLES WITH COVALENTLY BONDED STABILIZER - An apparatus composed of: (a) a substrate; and (b) a deposited composition comprising a liquid and a plurality of metal nanoparticles with a covalently bonded stabilizer. | 09-18-2008 |
20080277724 | ELECTRONIC DEVICE HAVING A DIELECTRIC LAYER - An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties. | 11-13-2008 |
20080286907 | SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTORS - A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio. | 11-20-2008 |
20090039344 | POLY[BIS(ETHYNYL)HETEROACENE]S AND ELECTRONIC DEVICES GENERATED THEREFROM - An electronic device comprising a polymer of Formula or Structure (I) | 02-12-2009 |
20090065766 | DIKETOPYRROLOPYRROLE-BASED POLYMERS - A polymer has a structure represented by: | 03-12-2009 |
20090065878 | DIKETOPYRROLOPYRROLE-BASED DERIVATIVES FOR THIN FILM TRANSISTORS - A thin film transistor device includes a semiconductor layer. The semiconductor layer includes a compound comprising a chemical structure represented by: | 03-12-2009 |
20090127552 | THIN FILM TRANSISTOR - A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio. | 05-21-2009 |
20090140236 | THIN FILM TRANSISTORS - A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility. | 06-04-2009 |
20090140237 | THIN FILM TRANSISTORS - A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility. | 06-04-2009 |
20090140336 | SILVER NANOPARTICLE COMPOSITIONS - A silver nanoparticle composition is formed by the process comprising:
| 06-04-2009 |
20090142482 | Methods of Printing Conductive Silver Features - A method of forming a conductive ink silver features on a substrate by printing a silver compound solution and a hydrazine compound reducing agent solution on the surface of a substrate with a printhead. The silver compound solution and the hydrazine compound reducing agent solution are mixed just before, during, or following the printing of both solutions on the surface of the substrate, and the silver compound is then reduced to form conductive silver ink features on the substrate. | 06-04-2009 |
20090148600 | Metal Nanoparticles Stabilized With a Carboxylic Acid-Organoamine Complex - Metal nanoparticles with a stabilizer complex of a carboxylic acid-amine on a surface thereof is formed by reducing a metal carboxylate in the presence of an organoamine and a reducing agent compound. The metal carboxylate may include a carboxyl group having at least four carbon atoms, and the amine may include an organo group having from 1 to about 20 carbon atoms. | 06-11-2009 |
20090181183 | Stabilized Metal Nanoparticles and Methods for Depositing Conductive Features Using Stabilized Metal Nanoparticles - A metal nanoparticle composition includes a thermally decomposable or UV decomposable stabilizer. A method of forming conductive features on a substrate, includes providing a solution containing metal nanoparticles with a stabilizer; and liquid depositing the solution onto the substrate, wherein during the deposition or following the deposition of the solution onto the substrate, decomposing and removing the stabilizer, by thermal treatment or by UV treatment, at a temperature below about 180° C. to form conductive features on the substrate. | 07-16-2009 |
20090214764 | METAL NANOPARTICLES STABILIZED WITH A BIDENT AMINE - A metal nanoparticle composition includes a bident amine stabilizer associated with an external surface of the metal nanoparticle. A method of forming conductive features on a substrate, providing a solution of dispersed bident amine-stabilized metal nanoparticles, depositing the bident amine-stabilized metal nanoparticle dispersion onto a substrate, and heating the printed substrate to form conductive features on the surface of the substrate. | 08-27-2009 |
20090256138 | ORGANIC THIN FILM TRANSISTOR - Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): | 10-15-2009 |
20090256139 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 10-15-2009 |
20100009071 | BIMODAL METAL NANOPARTICLE INK AND APPLICATIONS THEREFOR - A bimodal metal nanoparticle composition includes first metal nanoparticles having an average diameter of from about 50 nm to about 1000 nm, and second stabilized metal nanoparticles having an average diameter of from about 0.5 nm to about 20 nm, the second stabilized metal nanoparticles including metal cores having a stabilizer attached to the surfaces thereof, wherein the stabilizer is a substituted dithiocarbonate. | 01-14-2010 |
20100032308 | METALLIZATION PROCESS FOR MAKING FUSER MEMBERS - The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member. | 02-11-2010 |
20100034693 | SILVER NANOPARTICLE PROCESS - A process comprising: (a) preparing a reaction mixture comprising a silver salt, the reducing agent comprising a hydrazine compound, a thermally removable stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles, wherein the reaction mixture generates an acid; and (b) removing the acid to produce the silver-containing nanoparticles substantially free of acid. | 02-11-2010 |
20100037731 | SILVER NANOPARTICLES AND PROCESS FOR PRODUCING SAME - Processes for producing silver nanoparticles are disclosed. A reaction mixture comprising a silver compound, a carboxylic acid, an amine compound, and an optional solvent is optionally heated. A hydrazine compound is then added and the mixture is further reacted to produce the silver nanoparticles. | 02-18-2010 |
20100038631 | ELECTRONIC DEVICE COMPRISING SEMICONDUCTING POLYMERS - An electronic device comprises a semiconducting polymer of Formula (I): | 02-18-2010 |
20100038714 | DEVICE AND PROCESS INVOLVING PINHOLE UNDERCUT AREA - An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit. | 02-18-2010 |
20100040863 | METHODS FOR PRODUCING CARBOXYLIC ACID STABILIZED SILVER NANOPARTICLES - Processes for producing carboxylic acid-stabilized silver nanoparticles are disclosed. A reaction mixture comprising a silver salt, a carboxylic acid, and a tertiary amine is heated to form carboxylic acid-stabilized silver nanoparticles. | 02-18-2010 |
20100041861 | SEMICONDUCTING POLYMERS - A semiconducting polymer of Formula (I): | 02-18-2010 |
20100041862 | ELECTRONIC DEVICE COMPRISING SEMICONDUCTING POLYMERS - An electronic device comprises a semiconducting polymer selected from the group consisting of Formulas (I) and (II): | 02-18-2010 |
20100041863 | SEMICONDUCTING POLYMERS - A semiconducting polymer is selected from the group consisting of Formulas (I) and (II): | 02-18-2010 |
20100230670 | DEVICE CONTAINING COMPOUND HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE - An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage. | 09-16-2010 |
20110034668 | ELECTRONIC DEVICES - An electronic device, such as a thin film transistor containing a semiconductor of the Formula: | 02-10-2011 |
20120034736 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 02-09-2012 |
20130101326 | METALLIZATION PROCESS FOR MAKING FUSER MEMBERS - The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member. | 04-25-2013 |