Patent application number | Description | Published |
20080224243 | Image Sensor and Method of Manufacturing the Same - An image sensor is provided. The image sensor can include a semiconductor substrate including a circuit region, an interlayer electric including a metal interconnection on the semiconductor substrate, a lower electrode on the metal interconnection, and a light receiving portion on the lower electrode. The light receiving portion can be a PIN diode formed to have a convex shape. | 09-18-2008 |
20090014830 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including at least one of the following steps: Forming an insulating film having at least one trench on and/or over a semiconductor substrate. Forming a metal film on and/or over a surface of an insulating film, including inside the trench. Forming a metal seed layer on and/or over the metal film inside the trench. Forming a metal plating layer on and/or over the metal seed layer to fill the trench. | 01-15-2009 |
20090014888 | SEMICONDUCTOR CHIP, METHOD OF FABRICATING THE SAME AND STACK PACKAGE HAVING THE SAME - A semiconductor chip may include a wafer, a semiconductor device formed on the wafer, a first dielectric layer formed on the wafer and the semiconductor device, a first metal interconnection formed on the first dielectric layer, a second dielectric layer formed on the first dielectric layer and the lower interconnection, and a third dielectric layer formed on the second dielectric layer. A second metal interconnection may be formed in the third dielectric layer, a first nitride layer formed on the third dielectric layer and the first metal interconnection, a via hole extending through the wafer, the first dielectric layer, the second dielectric layer, the third dielectric layer and the first nitride layer, a via formed in the via hole and a third metal interconnection formed on the first oxide layer, an exposed upper end of the via and the second metal interconnection. | 01-15-2009 |
20090020794 | Image Sensor and Method of Manufacturing the Same - Provided are an image sensor and a method of manufacturing the same. The image sensor can be vertically arranged image sensor where the photodiode is provided above the circuitry on the substrate. The photodiode can be formed on a lower electrode provided electrically connected to a CMOS circuit on a substrate. The photodiode can have a PIN or PI photodiode structure including an intrinsic layer on the lower electrode and a conductive type layer on the intrinsic layer. A salicide layer can be disposed on the intrinsic layer, and the conductive type conduction layer can be disposed on the salicide layer. The intrinsic layer can be formed to create a light condensing portion, providing a convex-shaped upper surface. | 01-22-2009 |
20090160051 | Semiconductor Chip, Method of Fabricating the Same and Semiconductor Chip Stack Package - Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection. | 06-25-2009 |
20100072629 | Wiring Structure, Semiconductor Device Having the Wiring Structure, and Method for Manufacturing the Semiconductor Device - A wiring structure, a semiconductor device having the structure, and a method for manufacturing the semiconductor device are disclosed. The wiring structure includes a first metal layer, a second metal layer on the first metal layer, an insulating layer between the first metal layer and the second metal layer, and a metal via pattern formed in the insulating layer to electrically connect the first and second metal layers to each other. The metal via pattern includes a plurality of metal vias spaced apart from one another, and each of the metal vias includes a vertical via line extending in a vertical direction and a horizontal via line extending in a horizontal direction to cross the vertical via line. The wiring structure may achieve minimized chip defects, fewer cracks in the insulating layer, effective use of the occupation area of a semiconductor chip, and reduced chip size and manufacturing costs. | 03-25-2010 |
20100164033 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method of manufacturing an image sensor. An image sensor may include a semiconductor substrate which may include a readout circuitry. An image sensor may include an interlayer dielectric over a semiconductor substrate, and/or a first metal pattern over an interlayer dielectric. An interconnection may penetrate an interlayer dielectric and/or may be connected to a readout circuitry. A first metal pattern may be formed over an interlayer dielectric, and/or may be connected to an interconnection. A second metal pattern may be formed over a first metal pattern. A photodiode pattern may be formed over a second metal pattern. | 07-01-2010 |
Patent application number | Description | Published |
20080224246 | Image Sensor and Method for Fabricating the Same - An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel. | 09-18-2008 |
20080265903 | Plasma Diagnostic Apparatus And Method - Provided is a plasma diagnostic apparatus includes a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus includes: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input. | 10-30-2008 |
20080286962 | METHOD FOR FABRICATING METAL PAD - A method for fabricating a metal pad is disclosed. The fabrication method includes the step of selectively etching a wire insulation film formed on a semiconductor substrate to form a pattern, such as a dual damascene pattern, having plural vias in one trench. A metal film is deposited to fill the pattern and an insulation film is formed on the metal film. Further, the method includes removing the insulation film and the metal film to expose a surface of the wire insulation film to thereby form a metal pad and via contacts. | 11-20-2008 |
Patent application number | Description | Published |
20120196191 | LITHIUM SECONDARY BATTERY - Disclosed is a lithium secondary battery. The lithium secondary battery includes a cathode, an anode, a separator and a non-aqueous electrolyte solution. The separator includes a porous substrate, and a coating layer coated on at least one surface of the porous substrate and including a mixture of inorganic particles and a binder polymer. The non-aqueous electrolyte solution contains an ionizable lithium salt, an organic solvent, and a dinitrile compound having a specific structure. The lithium secondary battery is very safe without side reactions of the electrolyte solution. Therefore, the lithium secondary battery exhibits excellent cycle life and output performance characteristics. | 08-02-2012 |
20120202124 | LITHIUM SECONDARY BATTERY - Disclosed is a lithium secondary battery. The lithium secondary battery includes a cathode, an anode, a separator and a non-aqueous electrolyte solution. Either the cathode or the anode or both include metal oxide coating layers on electrode active material particles forming the electrode or a metal oxide coating layer on the surface of an electrode layer formed on a current collector. The non-aqueous electrolyte solution contains an ionizable lithium salt, an organic solvent, and a dinitrile compound having a specific structure. In the lithium secondary battery, degradation of the electrode is prevented and side reactions of the electrolyte solution are inhibited. Therefore, the lithium secondary battery exhibits excellent cycle life and output performance characteristics. | 08-09-2012 |
20130230781 | NON-AQUEOUS ELECTROLYTE AND LITHIUM SECONDARY BATTERY USING THE SAME - The present invention provides a non-aqueous electrolyte solution for a lithium secondary battery, comprising an ester-based compound having a branched-chain alkyl group; and a lithium secondary battery using the same. | 09-05-2013 |