Patent application number | Description | Published |
20100027235 | Distributed system with shielded sensors - A sensing unit comprising sensor means enclosed in a casing made of a ferromagnetic material, to achieve a ferromagnetic shield. The sensing unit may further include signal processing means, also enclosed in the ferromagnetic casing. | 02-04-2010 |
20100139372 | Method for detecting leakage from a pipe - A method for detecting leakage from a pipe uses multiple channels/inputs, wherein a low frequency range input measures seismic noises, and a high frequency range input measures cavitation noises. A leakage indication is issued if both the low frequency and high frequency noises are simultaneously detected. A Sophisticated algorithm for processing sensors data in a four dimensional space includes location and time, includes a method for detecting an intruder's path in a location and time space. A method for detecting unauthorized access to oil, gas or other pipes, by monitoring the protective cathodic voltage and detecting changes in the voltage which are indicative of a technical failure or a deliberate attack on the pipe. | 06-10-2010 |
20100141276 | Method for detecting unauthorized access - A method for detecting unauthorized access to oil, gas or other pipes, by monitoring the protective cathodic voltage and detecting changes in the voltage which are indicative of a technical failure or a deliberate attack on the pipe. A method for detecting leakage from a pipe using multiple channels/inputs, wherein a low frequency range input measures seismic noises, and a high frequency range input measures cavitation noises, and wherein a leakage indication is issued if both the low frequency and high frequency noises are simultaneously detected. A low power consumption Wireless communications protocol is used. | 06-10-2010 |
20100146374 | Wireless communications method - A Wireless communications protocol/method comprises: a. Sensors data size and structure are constant, and consist of several fields; b. The sensors message include one or more of the following: 1) a 8 to 16 bits long preamble of a start sequence, for example a binary 1010 . . . binary sequence 2) a sync sequence of for example 8 bits of a 11001100 sequence 3) a sensor's unique ID number of for example 8 to 16 bits 4) several bits of sensor's internal clock counter 5) several bits indicating the message type 6) data, for example 16 bits of data, and/or 7) CRC (for Cyclic Redundancy Check purposes), for example 8 to 16 bits. A method for detecting leakage from a pipe uses multiple channels/inputs, wherein a low frequency range input measures seismic noises, and a high frequency range input measures cavitation noises. | 06-10-2010 |
20100156637 | Method for detecting an intruder's path - A Sophisticated algorithm for processing sensors data in a four dimensional space including location and time, includes a method for detecting an intruder's path in a location and time space, comprising: a. Measuring signals from a plurality of sensors distributed in a protected location; b. storing the measured sensors data, together with a time stamp for each measurement; c. transmitting the sensors data to a processing center; d. processing the sensors data using the location and time relationships to detect movement of a source of the signals; and e. issuing an alarm if and when a movement of the source is detected. A method for detecting unauthorized access to oil, gas or other pipes, by monitoring the protective cathodic voltage and detecting changes in the voltage which are indicative of a technical failure or a deliberate attack on the pipe. | 06-24-2010 |
Patent application number | Description | Published |
20090014711 | Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them - Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping. | 01-15-2009 |
20090253250 | FORMATION OF NANOWHISKERS ON A SUBSTRATE OF DISSIMILAR MATERIAL - A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature. | 10-08-2009 |
20100035412 | PRECISELY POSITIONED NANOWHISKERS AND NANOWHISKER ARRAYS AND METHOD FOR PREPARING THEM - A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface. | 02-11-2010 |
20100151661 | NANOSTRUCTURES FORMED OF BRANCHED NANOWHISKERS AND METHODS OF PRODUCING THE SAME - A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material. A neural network may be formed by positioning the first nanowhiskers close together so that adjacent trees contact one another through nanowhiskers grown in a subsequent stage, and heterojunctions within the nanowhiskers create tunnel barriers to current flow. | 06-17-2010 |
20100221882 | Nanoelectronic structure and method of producing such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 09-02-2010 |
20100283064 | NANOSTRUCTURED LED ARRAY WITH COLLIMATING REFLECTORS - The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs. | 11-11-2010 |
20110193055 | NANOWHISKERS WITH PN JUNCTIONS, DOPED NANOWHISKERS, AND METHODS FOR PREPARING THEM - Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping. | 08-11-2011 |
20110215297 | Formation of Nanowhiskers on a Substrate of Dissimilar Material - A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface. A segment of an optically active material may be formed within the nanowhisker and bounded by heterojunctions so as to create a quantum well wherein the height of the quantum well is much greater than the thermal energy at room temperature, whereby the luminescence properties of the segment remain constant without quenching from cryogenic temperatures up to room temperature. | 09-08-2011 |
20110316019 | Nanoelectronic Structure and Method of Producing Such - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 12-29-2011 |
20120126200 | Nanowhiskers with PN Junctions, Doped Nanowhiskers, and Methods for Preparing Them - Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. | 05-24-2012 |
20120270345 | LED with Upstanding Nanowire Structure and Method of Producing Such - The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire. | 10-25-2012 |
20130146835 | NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME - A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. | 06-13-2013 |
20140175372 | Recessed Contact to Semiconductor Nanowires - A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. | 06-26-2014 |
20140179087 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 06-26-2014 |
20140312381 | NANOELECTRONIC STRUCTURE AND METHOD OF PRODUCING SUCH - The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact. | 10-23-2014 |
20150027523 | Nanostructures and Methods for Manufacturing the Same - A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. | 01-29-2015 |