Hikosaka, JP
Ariyoshi Hikosaka, Osaka JP
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20120155893 | Toner Calculation in an Image Forming Device - Provided is an image forming apparatus that consumes toner to form an image, including a first calculation portion, a second calculation portion, and a third calculation portion. The first calculation portion calculates a toner consumption by a first calculation method. The second calculation portion calculates the toner consumption by a second calculation method according to a predetermined calculation formula after a predetermined switching criterion is satisfied. The third calculation portion calculates a value of a parameter in the predetermined calculation formula of the second calculation method based on the toner consumption calculated by the first calculation method. | 06-21-2012 |
Ariyoshi Hikosaka, Nara JP
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20080219497 | IMAGE PROCESSING DEVICE, RECORDING MEDIUM, AND IMAGE PROCESSING METHOD - An image processing device for embedding digital watermarking data into image data of a manuscript includes a storage device that stores digital watermarking data, a margin area detecting device that detects a margin area that is different from an object on which printing is performed, a margin size calculating device that calculates the size of the margin area, a data amount calculating device that calculates the data amount of the digital watermarking data that is allowed to be embedded within the size of the margin area, an extracting device that extracts digital watermarking data from a plurality of sets of digital watermarking data stored in the storage device according to the extraction priority order based on the data amount calculated by the data amount calculating device, and an embedding device that embeds the digital watermarking extracted by the extracting device into the margin area. | 09-11-2008 |
Ariyoshi Hikosaka, Chuo-Ku JP
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20090059258 | Image forming apparatus - Test print images are created as focusing on one image quality mode among a plurality of image quality modes that are provided in advance according to the type of document and with high practical needs such as text mode, photo mode, text/photo mode containing both text and photographs, etc. The test print images thus created are image-formed on a sheet of recording paper and offered for the purpose of image quality selection in accordance with a user's preference. Consequently, an image forming apparatus capable of realizing a test printing function that is practical with a high level of user satisfaction can be provided. | 03-05-2009 |
Ariyoshi Hikosaka, Osaka-Shi JP
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20090109492 | IMAGE PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM STORING IMAGE PROCESSING PROGRAM - An image area detecting portion detects an area (image area) in a sheet subjected to printing where characters and images take up. A pattern creating portion creates a copy prevention pattern in such a manner that a latent image is embedded only to a detected image area with respect to a mask pattern into which a dot pattern is incorporated. A print image creating portion superimposes the generated copy prevention pattern and the document image to each other. When the printed object is read in a copying machine having a copy guard function, detection of the dot pattern can be performed without being interfered by a latent image since only a mask pattern is printed in an area corresponding to a reading start position. | 04-30-2009 |
20090268256 | IMAGE PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM STORING IMAGE PROCESSING PROGRAM - A special pattern determination section determines whether a special pattern is included in a document image read by a document reading section. If the special pattern determination section determines that the special pattern is included, the breaking pattern applying section applies a breaking pattern to the document image, and the print image generating section accumulates image data of the document image applied with the breaking pattern into a memory. On the other hand, if it is determined that the special pattern is not included, the print image generating section accumulates the image data of the document image directly into the memory. Then, if it is set by a user so as not to print the breaking pattern, the controller deletes image data of the document image accumulated in the memory and applied with the breaking pattern. | 10-29-2009 |
20100027047 | PRINTING CONTROL DEVICE, PRINTING SYSTEM AND PRINTING CONTROL METHOD - When a selection for canceling a security image is input at a client computer, then a password authentication unit causes a display unit to display a password reception screen, whereby an input password is compared with an authentication password stored in a password storage unit. When the passwords are matching, the print data generation unit of the client computer generates print data without adding a security image to the original data, and outputs the print data to a print server. A control unit of the print server transfers the print data to a printer, a print log acquisition unit acquires print log information from the printer, and the print log information and print data are stored in a print information storage unit. | 02-04-2010 |
20100110484 | IMAGE READING APPARATUS AND IMAGE FORMING APPARATUS - A user inputs an ID and password, using an operating panel. When a start key is pressed to instruct the start of copying of a document, a dot pattern detection unit detects, from image data, a dot pattern formed according to a predetermined period. When a dot pattern is detected, a display control unit causes an operating panel to display a message indicating that a dot pattern has been detected. When the continuation of a copying operation is instructed, then after the completion of reading of the document, the image log generation unit generates an image log and log information and image log transmit ion control unit transmits the image log and log information to a computer of an administrator. | 05-06-2010 |
20150381838 | IMAGE READING DEVICE - An image reading device includes a document conveyance section, a reading section, a determination section, an operation control section, a reading instruction request section, and a reading instruction reception section. The determination section determines whether a document sheet is an identifier sheet indicating identification information for identifying an information processing device that is a communication target. The reading instruction request section communicates with the information processing device identified by the identification information, thereby requesting the information processing device for an instruction pertaining to document reading. Upon the reading instruction reception section receiving the instruction, the operation control section causes the reading section to perform document reading in accordance with a reading setting indicated by the instruction in order to generate image data for document sheets from a document sheet directly after the identifier sheet through to a document sheet directly prior to a next identifier sheet. | 12-31-2015 |
Atsushi Hikosaka, Sagamihara JP
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20100047997 | METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween. | 02-25-2010 |
Hiroki Hikosaka, Chiyoda-Ku JP
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20120228268 | POWER SUPPLY DEVICE FOR ELECTRICAL DISCHARGE MACHINE AND CONTROL METHOD THEREFOR - The power supply device for electrical discharge machine is equipped with a capacitor that stores electric charge, a DC power supply V that charges the capacitor, a first switching element that generates a pulse-like discharge by applying the electric charge stored in the capacitor to an electrode gap, and a control unit that controls ON/OFF of the first switching element based on a voltage of the electrode gap. After controlling the first switching element to be ON so as to apply the electric charge stored in the capacitor to the electrode gap, the control unit changes an amount of time from a point when the voltage of the electrode gap is decreased to a predetermined value or lower to a point when the first switching element is controlled to be OFF, so as to control the magnitude of a discharge pulse generated in the electrode gap. | 09-13-2012 |
20130140276 | CONTROLLER OF ELECTRICAL DISCHARGE MACHINE - A controller of an electrical discharge machine comprises: a control unit that controls a machining condition set by the electrical discharge machine; an acquisition unit that acquires a parameter indicating an electrical discharge state between poles in a state where the machining condition is controlled by the control unit so that a normal electrical discharge occurs between the poles; an arithmetic unit that obtains a probability density distribution of the acquired parameter; a decision unit that decides a threshold that specifies a boundary between a normal electrical discharge and an abnormal electrical discharge between the poles based on the obtained probability density distribution; and a discrimination unit that discriminates whether the electrical discharge state between the poles is normal or abnormal by using the decided threshold, and wherein the control unit controls the machining condition based on a discrimination result of the discrimination unit. | 06-06-2013 |
20140027409 | ELECTRIC-DISCHARGE MACHINING DEVICE - An electric-discharge machining device including an electric-discharge-state determination unit that determines whether an electric discharging state between a machining electrode and a workpiece is either a state of normal electric discharge or of abnormal electric discharge, and a machining-condition switching unit that changes at least one machining condition, further includes a storage unit that stores therein an electric-discharge-state determination indicator, a standard-deviation calculation unit, and a boundary calculation unit that calculates a boundary to be applied to a determination in the electric-discharge-state determination unit based on the electric-discharge-state determination indicator, wherein the machining-condition switching unit changes the machining condition according to a comparison result between the standard deviation calculated by the standard-deviation calculation unit and a standard deviation reference set as a reference of the standard deviation. | 01-30-2014 |
Hiroki Hikosaka, Tokyo JP
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20150283635 | ELECTRICAL DISCHARGE MACHINING SYSTEM - An electric discharge machining system is provided which distinguishes an abnormal discharge caused by an immediate discharge and an abnormal discharge caused not by the immediate discharge to suitably control in each case. The electric discharge machining system according to the present invention that machines a workpiece by producing a discharge between an electrode and the workpiece, includes: a no-load-time detection means that detects no-load time of inter-electrode voltage between the electrode and the workpiece; an immediate-discharge determination means that compares the no-load time detected by the no-load-time detection means with predetermined time to determine whether or not the discharge is an immediate discharge; a voltage detection means that detects the inter-electrode voltage; an abnormal-discharge determination means that compares the voltage detected by the voltage detection means with a predetermined value to determine whether or not the discharge is a normal discharge; a discharge state assessment means that assesses a state of the discharge on the basis of the determination result of the immediate-discharge determination means and the determination result of the abnormal-discharge determination means; and a machining condition control means that controls a machining condition on the basis of the discharge state assessed by the discharge state assessment means. | 10-08-2015 |
Kenji Hikosaka, Yokohama-Shi JP
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20090242341 | Fluid pressure shock absorber - An object of the present invention is to improve productivity by making manufacturing of a piston easier. A piston | 10-01-2009 |
20090260938 | SHOCK ABSORBER - A shock absorber has a seat disk seated on a valve seat of a piston. A disk valve opens and closes a slot provided in the seat disk to extend in the circumferential direction thereof. In a low piston speed region, an orifice passage generates a damping force of orifice characteristics. In an intermediate piston speed region, the disk valve opens to generate a damping force of valve characteristics. In a high piston speed region, the seat disk opens to prevent an excessive increase in damping force. The disk valve partially opens the slot relative to the circumferential direction to gradually increase the flow path area, thereby preventing a sharp change in damping force in a transitional region from the low to intermediate piston speed region. | 10-22-2009 |
Kentaro Hikosaka, Kawaguchi-Shi JP
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20100265403 | PROJECTOR APPARATUS AND PROJECTION IMAGE CORRECTING PROGRAM PRODUCT - A projector apparatus includes: a projection unit that projects an image onto a projection surface; a reflectance distribution detection unit that detects a reflectance distribution at the projection surface; a density distribution detection unit that detects a density distribution of a base pattern on the projection surface; a smoothing unit that smooths the reflectance distribution and the density distribution; an input unit that inputs image data; a correction unit that corrects the input image data based upon the smoothed reflectance distribution and the smoothed density distribution; and a control circuit that controls the projection unit so as to project the image based upon the correction image data. | 10-21-2010 |
20110242352 | IMAGE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, IMAGE PROCESSING APPARATUS, AND IMAGING APPARATUS - Information of a flare component is extracted from a shot image without using shooting condition data such as wavelength spectrum data of a bright point and imaging characteristic data of a shooting optical system. To achieve this, an aspect of an image processing method of the present application includes an input step inputting a processing target image obtained by a shooting optical system, an estimating step estimating an ideal bright point image component included in an occurrence area of a flare in the processing target image, an extracting step extracting a real bright point image component including a flare component from the occurrence area, and a calculating step calculating a difference between the ideal bright point image component and the real bright point image component as an index of the flare component included in the occurrence area. | 10-06-2011 |
Kentaro Hikosaka, Tokyo JP
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20110169854 | PROJECTOR APPARATUS AND PROJECTION IMAGE CORRECTING PROGRAM PRODUCT - A projector apparatus includes: a projection unit that projects an image onto a projection surface; a reflectance distribution detection unit that detects a reflectance distribution at the projection surface; a density distribution detection unit that detects a density distribution of a base pattern at the projection surface; a smoothing unit that smooths the reflectance distribution and the density distribution; an input unit that inputs image data; a correction unit that corrects the input image data based upon the smoothed reflectance distribution, the smoothed density distribution and input/output characteristics of the projection unit; and a control unit that controls the projection unit so as to project the image based upon the image data having been corrected. | 07-14-2011 |
Koji Hikosaka, Osaka JP
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20140263966 | SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A solid-state imaging device according to the present invention includes: a pixel block in which pixels are arranged in a matrix; vertical common signal lines each provided for a corresponding one of columns of the plurality of pixels, and reads signals of pixels in the corresponding column; and a column constant current source which supplies a current to the vertical common signal lines, wherein the column constant current source includes: load transistors each having a source terminal and a drain terminal one of which is connected to one of the vertical common signal lines and the other of which is grounded; a constant voltage supply unit which supplies a voltage to gate terminals of the load transistors; and a voltage holding circuit in which sample and hold circuits are connected in multiple stages, and which stabilizes the voltage which is supplied to the gate terminals of the load transistors. | 09-18-2014 |
Manami Hikosaka, Yokohama-Shi JP
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20140029833 | X-RAY IMAGING APPARATUS, METHOD OF CONTROLLING X-RAY IMAGING APPARATUS, AND STORAGE MEDIUM - An X-ray imaging apparatus comprises an examination information input unit configured to input examination information necessary for an examination; an examination dividing operation reception unit configured to receive an instruction to divide the examination into a first examination associated with the examination information and a second examination unassociated with the examination information, during an interval between a start of the examination and an end of the examination; and an image distribution instruction reception unit configured to receive an instruction to distribute images which have been captured in the examination in association with one of the first examination and the second examination. | 01-30-2014 |
20150272526 | X-RAY IMAGING APPARATUS AND CONTROL METHOD - A control apparatus for an X-ray imaging system obtains examination information including a plurality of imaging techniques and a plurality of imaging conditions corresponding to the plurality of imaging techniques. When the content of a condition item of the imaging condition selected from the plurality of imaging conditions is changed in accordance with an operation input from the operator, the control apparatus applies the change to an imaging condition other than the selected imaging condition of the plurality of imaging conditions. | 10-01-2015 |
Masahide Hikosaka, Toyohashi-Shi JP
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20110045345 | POWER SOURCE APPARATUS AND METHOD OF MANUFACTURING POWER SOURCE APPARATUS - A power source apparatus includes a case | 02-24-2011 |
20120264001 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 10-18-2012 |
20120264003 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 10-18-2012 |
20120264004 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 10-18-2012 |
20120264005 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 10-18-2012 |
20120264006 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 10-18-2012 |
Masahide Hikosaka, Aichi-Ken JP
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20100047686 | ELECTRODE STRUCTURE AND BATTERY DEVICE MANUFACTURING METHOD - An electrode is provided with a metal terminal extending from a battery module main body, a bolt which has an expanded section configuring a retaining section at a rear end portion and penetrates the metal terminal upward, and an insulating body which insulates the metal terminal and the battery module case one from the other. The insulating body is provided with a drop preventing section which abuts at least a lower surface of the expanded section of the bolt and prevents the bolt from dropping from the metal terminal. | 02-25-2010 |
20110092111 | ELECTRODE STRUCTURE - An electrode structure for connecting a battery module to a bus bar is provided. When a bolt is in advance passed through and temporarily fixed to a metal terminal to be connected to a bus bar, the metal terminal is fixed on a lid, and the lid is attached to a body of a battery module, there was a problem that metal powder generated by the friction between the metal terminal and the bolt intrudes into the battery. A solution to the problem is provided by an electrode structure including a metal terminal having a base and a tip end, the base fixed to a body of a battery module, the tip end spaced apart by a predetermined distance from the body of the battery module and connected to a bus bar, a nut arranged between the tip end of the metal terminal and the body of the battery module, a rotation stopper in abutment with the nut and preventing the nut from slipping when fastening the bus bar, and a screw shaft screwed into the nut and penetrating through the tip end of the metal terminal and the bus bar. | 04-21-2011 |
Masamichi Hikosaka, Hiroshima JP
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20090249883 | PROCESS FOR PRODUCING POLYMER ORIENTED CRYSTAL, POLYMER ORIENTED CRYSTAL PRODUCED BY SAID PRODUCTION PROCESS, AND METHOD FOR DETERMINING CRITICAL ELONGATION STRAIN RATE OF POLYMER MELT - A method and means for determining a critical elongation strain rate of a polymer melt, which make it possible to subject a polymer melt to elongation to prepare a bulk oriented melt, are established, and a process for producing bulk polymer oriented crystals and polymer oriented crystals are provided. In the critical elongation strain rate determination process or critical elongation strain rate determining method, a polymer melt ( | 10-08-2009 |
20100063235 | POLYMER CRYSTALLINE MATERIALS - One embodiment of the present invention provides polymer crystalline materials containing crystals of the polymer and satisfying the following requirements (I) and (II) or the following requirements (I) and (III): (I) the polymer crystalline materials a crystallinity of 70% or greater; (II) the crystals are 300 nm or less in size; and (III) the crystals have a number density of 40 μm | 03-11-2010 |
20110300364 | POLYMER SHEET AND METHOD FOR PRODUCING SAME - A polymer sheet according to at least one embodiment of the present invention is a polymer sheet whose main component is oriented nanocrystals of a polymer, and which satisfies the following conditions (I), (II), and (III): (I) having a crystallinity of not less than 70%; (II) having a tensile strength at break of not less than 100 MPa and a tensile modulus of not less than 3 GPa; and (III) having an average thickness of not less than 0.15 mm. According to at least one embodiment of the present invention, it is possible to provide a polymer sheet excelling in properties such as mechanical strength, heat tolerance, and transparency, particularly a polymer sheet having excellent properties such as mechanical strength, heat tolerance, and transparency in general-purpose plastics such as polypropylene. | 12-08-2011 |
20130196168 | METHOD FOR SECONDARY MOLDING OF POLYMER NANO ORIENTED CRYSTAL MATERIAL - A method for secondary-molding a polymer nano oriented crystal material in accordance with an embodiment of the present invention includes the steps of: heating the polymer nano oriented crystal material so that the polymer nano oriented crystal material changes into a mobile phase or a melt having a dense entanglement network structure; molding the polymer nano oriented crystal material which changed into the mobile phase or the melt including the dense entanglement network in the step; and cooling the polymer nano oriented crystal material, which has undergone the step, until the polymer nano oriented crystal material changes into an ordered phase. | 08-01-2013 |
Masamichi Hikosaka, Kawasaki-Shi JP
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20120018917 | PROCESS AND APPARATUS FOR PRODUCING CRYSTALLINE RESIN FILM OR SHEET - A process and apparatus for manufacturing a crystalline resin film or sheet. This manufacturing apparatus includes: an extruder that melts crystalline resin while supplying it; a gear pump that is provided on the downstream side of the extruder; a die which is provided on the downstream side of the gear pump, and which has a slit-shaped aperture; a cooling apparatus which cools film-shaped or sheet-shaped crystalline resin (A) discharged in a melted state from the die to a temperature which is not less than the crystallization temperature but not more than the melting point; and a pair of pinch rolls that press-roll between them the film-shaped or sheet-shaped crystalline resin (B) which has passed through the cooling apparatus ( | 01-26-2012 |
Masaru Hikosaka, Osaka JP
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20110192449 | PHOTOVOLTAIC MODULE - This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box. | 08-11-2011 |
Masaru Hikosaka, Izumisano JP
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20090014060 | SOLAR CELL MODULE - A drawing-out opening part and a first insertion slit formed in a back-surface-side sealing body in a direction almost orthogonal to the principal surface of the solar cell module are designed not to overlap each other on a projection plane in parallel to the principal surface of the solar cell module. | 01-15-2009 |
Masaru Hikosaka, Izumisano City JP
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20080230114 | SOLAR CELL MODULE - Disclosed is a solar cell module that reduces entering of moisture into a solar cell module from a side surface SF thereof, and has high moisture-resistant properties. The disclosed solar cell module is a solar cell module in which solar cells | 09-25-2008 |
20140106497 | SOLAR CELL MODULE WITH SEALING MEMBERS - Disclosed is a solar cell module that reduces entering of moisture into a solar cell module from a side surface SF thereof, and has high moisture-resistant properties. The disclosed solar cell module is a solar cell module in which solar cells | 04-17-2014 |
Masashi Hikosaka, Hyogo JP
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20130172189 | PLANT ACTIVATOR - A compound useful as a plant activator for activating an endogenous defense system of a plant to control disease damage is provided. A compound represented by the formula: (R | 07-04-2013 |
Masatoshi Hikosaka, Kariya JP
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20080198639 | OPERATION CONTROL CIRCUIT - It is an object of the present invention to provide an operation control circuit without using a photo-coupler. The operation control circuit controls the operation of an LED in a DC/AC inverter comprising a voltage conversion circuit, a DC/AC conversion circuit for converting output voltage of the voltage conversion circuit to two pieces of AC voltage each with an opposite phase, and an LED which is lit when AC voltage is outputted from the DC/AC conversion circuit. The operation control circuit comprising a rectifier circuit, capacitors connected between the input terminal of the rectifier circuit and the output terminal of the DC/AC conversion circuit, and a comparator circuit connected to the same ground level as the ground level connected to the LED for lighting the LED when voltage V | 08-21-2008 |
Michiharu Hikosaka, Komaki-Shi JP
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20080203764 | BOUND STOPPER, BOUND STOPPER ASSEMBLY, AND BOUND STOPPER MOUNTING STRUCTURE FOR VEHICLE BODY - A bound stopper provided with a drainage path for draining water that has passed through drainage holes formed in a bottom portion of a bracket. The drainage path is constituted by a recessed portion formed on at least one of a plurality of corresponding portions of a fixing metal fitting and the recessed portion opens outward in a direction perpendicular to an axial direction of the fitting. The corresponding portions are positioned so as to correspond to each of the plurality of the drainage holes, upon the fitting being in contact with the bracket. A locating projection is provided on an outer surface of the corresponding portion different from the corresponding portion having the recessed portion. Insertion of a locating projection into the drainage hole corresponding to the different corresponding portion allows the fitting to be circumferentially positioned such that the corresponding portions correspond to the drainage holes. | 08-28-2008 |
20120074630 | ANTI-VIBRATION BUSH - An anti-vibration bush has a pair of intermediate members harder than a main rubber elastic body, circumferentially extending for a predetermined length, and provided radially opposite to each other radially between an inner shaft member and an outer tubular member. The intermediate members are embedded in and attached to the main rubber elastic body. An axial size of an end surface on the inner shaft member side of each of the intermediate members is larger than an axial size of an end surface on the outer tubular member side of each of the intermediate members. | 03-29-2012 |
20150145190 | LIQUID SEALED-IN VIBRATION DAMPER - A liquid sealed-in vibration damper respectively connected with two members that perform a relative displacement includes an elastic member, which is provided therein with a liquid chamber in which a liquid is sealed. When a direction from a side of the liquid sealed-in vibration damper connected with one of the two members to a side of the liquid sealed-in vibration damper connected with the other of the two members is set to an extension direction of the elastic member, a recess is provided in a region between an end portion on a side of the elastic member connected with any one of the two members and the liquid chamber, the recess being recessed in a direction orthogonal to the extension direction up to a position where a position of the recess in the orthogonal direction is located at an inner side of the liquid chamber. | 05-28-2015 |
Mitiharu Hikosaka, Komaki-Shi JP
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20100327486 | Manufacturing Method of Cylindrical Member and Manufacturing Method of Vibration Damping Rubber Bushing Having the Cylindrical Member - A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections. | 12-30-2010 |
20100327499 | VIBRATION DAMPING RUBBER BUSHING - A vibration damping rubber bushing including: an inner cylindrical member; a main rubber elastic body bonded to an outer circumferential face of the inner cylindrical member; a plurality of anti-slip projections provided on at least one of axial end faces of the inner cylindrical member that project axially outward from the axial end face and extend with ribbed shape in a diametrical direction on the axial end face to produce a spokewise pattern overall; and an annular water barrier projection provided on a diametrical medial section of the at least one of the axial end faces of the inner cylindrical member, projecting axially outwardly and extending circumferentially, with the anti-slip projections being disposed to both radially inner side and radially outer side of the annular water barrier projection. | 12-30-2010 |
Mitsuyoshi Hikosaka, Shinshiro-Shi JP
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20100212210 | DLC-COATED FISHING LURE - A DLC-coated fishing lure includes a fishing lure base material made of metal and having a predetermined shape; an intermediate layer made of one selected from a first group, a second group and a third group, the first group consisting of at least one kind of metal selected from the IIIb group, the IVa group, the Va group and the VIa group in the periodic table of elements, the second group consisting of at least one of a carbide, a nitride and a carbonitride of the at least one kind of metal, and the third group consisting of a mutual solid solution made of at least one selected from the first group and the second group, the intermediate layer being formed on a surface of the fishing lure base material; and a DLC layer having a thickness ranging from about 0.05 μm to about 0.55 μm and formed on the intermediate layer, the DLC layer presenting an appearance of a interference color. | 08-26-2010 |
Naotaka Hikosaka, Tokyo JP
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20110115898 | IMAGING APPARATUS, IMAGING PROCESSING METHOD AND RECORDING MEDIUM - An imaging apparatus, including, an imaging section, a gain adjustment section to adjust gain values of an R component or a B component, an information obtaining section to obtain information about a first photographing environment of the image after an adjustment, a first judgment section to judge whether the first photographing environment in the obtained information and a second photographing environment to which the gain adjustment section is to adjust the gain values of the R component or the B component, are different from each other, a gain re-adjustment section to re-adjust at least one of the gain values of the R component and the B component to be suppressed when judged that the first photographing environment and the second photographing environment are different from each other, and an image recording section to record an image obtained by performing a color adjustment by using a re-adjusted gain value. | 05-19-2011 |
Shinichi Hikosaka, Tokyo-To JP
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20080254394 | STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF - A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure. | 10-16-2008 |
20090233243 | STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF - A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure. | 09-17-2009 |
20100112311 | STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF - A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure. | 05-06-2010 |
Shogo Hikosaka, Kariya-City JP
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20150153422 | VOLTAGE DETECTION DEVICE - A first part circuit and an operational amplifier form a level shift circuit, which selects either one of battery cells forming an assembled battery and extracts and holds a voltage representing an inter-terminal voltage of a selected battery cell. A second part circuit and the operational amplifier form a residual voltage generation circuit, which generates a residual voltage by amplifying a differential voltage between a conversion subject voltage and an analog voltage corresponding to a conversion result of an A/D conversion circuit and applies the residual voltage to the A/D conversion circuit as a conversion subject voltage. A switchover circuit operates the operational amplifier as either one of the level shift circuit and the residual voltage generation circuit and switches over a connection-state to apply a voltage held by the level shift circuit to the A/D conversion circuit and the residual voltage generation circuit as a conversion subject voltage. | 06-04-2015 |
Shuhei Hikosaka, Yokohama-Shi JP
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20120062412 | MOVABLE INFORMATION COLLECTION APPARATUS - An object of the present invention is to provide a movable information collection apparatus capable of grasping the current situation in a timely fashion. Also, an object of the present invention is to provide a geographical monitoring system capable of utilizing the movable information collection apparatus. The movable information collection apparatus includes an observation data collection antenna system that receives observation data obtained by observing an observation target area from the air, a geographic information database that stores previously acquired geographic information in the observation target area, an evaluation calculation unit that calculates and outputs a difference between the observation data and the previously acquired geographic information, the observation data collection antenna system, the geographic information database, and the evaluation calculation unit being mounted on a movable pedestal. | 03-15-2012 |
Takaaki Hikosaka, Chiba JP
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20090081569 | ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY - Provided is an electrophotographic photosensitive body having a photosensitive layer on a conductive base, in which at least the outermost layer thereof contains particles having a double structure composed of a core member and a shell member having a lager rubber hardness than the core member. The electrophotographic photosensitive body has excellent mechanical strength such as wear resistance, abrasion resistance, and scratch resistance as well as excellent electrophotographic characteristics such as cleaning property for a long time period. | 03-26-2009 |
20090326184 | POLYCARBONATE COPOLYMER, METHOD FOR PRODUCING THE SAME, MOLDED BODY, OPTICAL MATERIAL, AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY - A polycarbonate copolymer contains: 0.1 to 50 mol % of a monomer unit represented by the following formula (1); and a monomer unit represented by the following formula (2). In the polycarbonate copolymer, the content of biphenols having a structure represented by the following formula (3) is 90 mass ppm or less. | 12-31-2009 |
20100233603 | POLYCARBONATE POLYMER, COATING LIQUID, AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY - A polycarbonate polymer includes: a monomer unit represented by a formula (1A) below; and a monomer unit represented by a formula (2). A haze of a solution that is obtained by dissolving the polycarbonate polymer in THF (tetrahydrofuran) at a concentration of 10 mass % is 5% or less (according to JIS K7105, optical path length of 10 mm). | 09-16-2010 |
20100324209 | POLYCARBONATE COPOLYMER, METHOD FOR PRODUCING THE SAME, MOLDED BODY, OPTICAL MATERIAL, AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY - A polycarbonate copolymer contains: 0.1 to 50 mol % of a monomer unit represented by the following formula (1); and a monomer unit represented by the following formula (2). In the polycarbonate copolymer, the content of biphenols having a structure represented by the following formula (3) is 90 mass ppm or less. | 12-23-2010 |
20120100474 | POLYCARBONATE COPOLYMER, COATING LIQUID USING SAME, AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY - A polycarbonate copolymer includes a repeating unit represented by a formula (1) below and a molar copolymer composition represented by Ar | 04-26-2012 |
20120101292 | METHOD FOR PRODUCING BISCHLOROFORMATE COMPOUND, POLYCARBONATE OLIGOMER HAVING SMALL NUMBER OF MONOMERS AND SOLUTION CONTAINING BISCHLOROFMATE COMPOUND - A dihydric phenol compound represented by the following formula (2), a phosgene compound, and an aliphatic tertiary amine are mixed together using a hydrophobic organic solvent to produce bischloroformate that is represented by the following formula (1) and has an average number of repeating units (n) of 1.99 or less. | 04-26-2012 |
20140011128 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR AND RESIN COMPOSITION - An electrophotographic photoreceptor that satisfies excellent transparency, abrasion resistance, and electrophotographic properties (including sensitivity and residual potential after light irradiation) all together is provided. Specifically, an electrophotographic photoreceptor and a resin composition that include therein (1) a polycarbonate resin (A) having a structural unit represented by the following formula (I) and (2) at least one selected from a polycarbonate resin (B) synthesized from a source material that includes therein a bisphenol represented by the following formula (II) and a polyester resin (B′) synthesized from a source material that includes therein a bisphenol represented by the following formula (II). In formulas (I) and (II), each of R | 01-09-2014 |
Takaaki Hikosaka, Sodegaura-Shi JP
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20130066037 | METHOD FOR PRODUCING BISCHLOROFORMATE COMPOUND, POLYCARBONATE OLIGOMER HAVING SMALL NUMBER OF MONOMERS AND SOLUTION CONTAINING BISCHLOROFORMATE COMPOUND - A dihydric phenol compound represented by the following formula (2), a phosgene compound, and an aliphatic tertiary amine are mixed together using a hydrophobic organic solvent to produce bischloroformate that is represented by the following formula (1) and has an average number of repeating units (n) of 1.99 or less. | 03-14-2013 |
20130337373 | POLYCARBONATE COPOLYMER, COATING FLUID USING SAME, ELECTROPHOTOGRAPHIC PHOTORECEPTOR, AND METHOD FOR PRODUCING POLYCARBONATE COPOLYMER - This invention relates to a polycarbonate copolymer having a structure formed of a repeating unit represented by the following formula (100): | 12-19-2013 |
Takashi Hikosaka, Obu-City JP
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20090116142 | Disk device - In a disk device, an arm for supporting a head includes upper and lower plates that are located parallel to a surface of a magnetic disk. The lower plate has a linear expansion coefficient greater than that of the upper plate. The upper and lower plates are provided with an electrically-heated wire. When a present altitude of the disk device exceeds a threshold altitude, an electric current is supplied to the heated wire so that the upper and lower plates are expanded. Due to a difference in the linear expansion coefficients between the upper and lower plates, the arm is warped in a direction away from the magnetic disk so that a distance between the head and the surface of the magnetic disk is increased. | 05-07-2009 |
Tomohiro Hikosaka, Gotemba-Shi JP
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20110026884 | RELAY OPTICAL CONNECTOR - In a relay optical connector | 02-03-2011 |
Tomohiro Hikosaka, Susono-Shi, Shizuoka JP
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20150378111 | OPTICAL CONNECTOR AND METHOD FOR ASSEMBLING OPTICAL CONNECTOR - An optical sub harness ( | 12-31-2015 |
Tomohiro Hikosaka, Shizuoka JP
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20130266270 | OPTICAL CONNECTOR - An optical connector | 10-10-2013 |
20150177464 | OPTICAL CONNECTOR - A protector is fixed to a housing in a state where a ferrule on which the protector is mounted is accommodated in a ferrule accommodation space of the housing, and thus a release of a locking state by a locking window and a fixing hook is regulated. | 06-25-2015 |
20150241642 | OPTICAL CONNECTOR - An optical connector includes: an optical fiber cable in which an optical fiber core wire and a tensile strength material are covered by a sheathing; a ferrule; a housing which holds the ferrule; a crimping sleeve which includes: a tubular portion; a tensile strength material holding projection which is formed on an outer circumference of the tubular portion; and a sheathing holding projection which is formed on the outer circumference so as to lie further rearwards than the tensile strength material holding projection; and a crimping ring which is crimped on to the tubular portion not only to thereby hold the tensile strength material between the tensile strength material holding projection and the crimping ring but also to thereby hold the tensile strength material and the sheathing between the sheathing holding projection and the crimping ring. | 08-27-2015 |
20150277063 | DUST CAP AND CONNECTOR ENGAGEMENT BODY - A connector engagement body ( | 10-01-2015 |
20150355423 | OPTICAL CONNECTOR - An optical connector includes an optical transceiver having an optical element, a case that covers the optical element, and a plurality of terminals that are externally protruded from a terminal projecting surface of the case, and a connector housing having a housing chamber that houses the optical transceiver. The terminal projecting surface of the case is formed as a flat reference plane. A surface which forms the housing chamber and to which the terminal projecting surface of the case abuts is formed as a flat position-correction surface. A pair of projections are formed on a surface which forms the housing chamber and which is opposite to the position-correction surface. | 12-10-2015 |
Tomohiro Hikosaka, Susono-Shi JP
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20130101258 | OPTICAL CONNECTOR - Disclosed is an optical connector which is connected to an end portion of an optical fiber cable that is obtained by covering an optical fiber strand with a covering part that has a tensile strength fiber. The optical connector comprises: a ferrule that is affixed to an end portion of the optical fiber strand exposed from the covering part; a crimping sleeve through which the optical fiber strand passes and to which the covering part is affixed; and a housing in which the ferrule and the crimping sleeve are held. The housing has a recessed container part that is provided with an opening in a lateral surface, and the crimping sleeve has a flange portion which can be contained in the recessed container part by being slid thereinto from the lateral side of the housing. | 04-25-2013 |
20140037252 | OPTICAL CONNECTOR - An optical connector includes a housing that receives a ferrule connected to a distal end of an optical fiber of an optical fiber cable, a crimping sleeve that includes a tubular portion adapted to allow the optical fiber to be inserted and also adapted to be inserted through a sleeve through-hole formed in a rear wall of the housing, and a sandwiching flange portion continued from the tubular portion and facing an rear wall inner surface of the housing, a crimping ring that fixes a sheath of the optical fiber cable sheathed on an outer circumference of the tubular portion, and a boot that includes a protective portion for covering outer circumferences of the optical fiber cable and the crimping ring and a locking flange portion continued from the protective portion and sandwiched between the sandwiching flange portion and the rear wall inner surface. | 02-06-2014 |
20140044397 | OPTICAL CONNECTOR AND METHOD OF ASSEMBLING THE OPTICAL CONNECTOR - An optical connector includes a ferrule connected to an optical fiber cable, a housing for containing the ferrule, a ferrule holding member attached in the housing, and a spring member that urges the ferrule toward the housing. The ferrule holding member includes a support portion which restricts movement of the ferrule toward the tip side of the housing, a fiber insertion groove formed on the ferrule holding member for containing the optical fiber, a crimped portion which is provided on a rear portion of the ferrule holding member. A crimping member is attached to the crimped portion for fixing at least one of a high-tensile-strength wire and an outer sheath of the optical fiber cable. The spring member is attached to the ferrule holding member. | 02-13-2014 |
20140341512 | OPTICAL CONNECTOR - An optical connector includes: a housing which houses a ferrule connected to an optical fiber cable; a crimping sleeve housed in the housing and including a tubular portion in which the optical fiber is passed through and which is led out from an opening of the housing; a crimping member fixing a sheath, covering the tubular portion, of the optical fiber cable; and a boot including a protecting portion covering the optical fiber cable and the crimping member, and including a flange portion being continuous to the protecting portion and covering the opening of the housing. A neck portion of a T-shaped protrusion, protruded from the flange portion toward an interior of the housing, is inserted into a boot engagement notch, which is formed in an outer portion of the crimping sleeve and an open end of which is closed by an inner surface of the housing. | 11-20-2014 |
20150338581 | Optical Connector - An optical connector includes a ferrule, a ferrule retaining member having, at its rear end portion, a fastening portion into which an optical fiber is inserted and onto which a tightening ring configured to hold a tensile strength wire and a jacket in place is tightly fastened, a housing, and a fiber insertion passage formed through the fastening portion and having an expansion space that ensures an interference avoidance gap with an outer circumference of the optical fiber inserted inside the fastening portion. | 11-26-2015 |
Tomoyuki Hikosaka, Chiba JP
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20090134338 | Electron Beam Irradiation Method, Electron Beam Irradiation Apparatus, and Electron Beam Irradiation Apparatus for Open-Mouthed Container - There are provided an electron beam application method and an electron beam application device capable of uniformly applying electron beams to an object even if the electron beams have a low energy. For this, electron beams (EB) are applied to a beverage container ( | 05-28-2009 |
Tomoyuki Hikosaka, Ichihara JP
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20110062347 | ELECTRON BEAM IRRADIATION APPARATUS FOR STERILIZING SHEET MATERIAL - At a conveying path | 03-17-2011 |
20110062351 | ELECTRON BEAM IRRADIATING APPARATUS WITH MONITORING DEVICE - The electron beam irradiating apparatus with the monitoring device has an electron beam irradiating means for irradiating materials in an irradiation chamber. The monitoring device has a photographing means for imaging a lights emitted by irradiating an electron beam to the materials; a storage means that stores state of electron beam irradiation in advance; and a calculating means that processes an image, which is captured by the photographing means, to decide a state of electron beam irradiation. The storage means has stored at least three state of electron beam irradiation and also has stored image luminance associated with those states of electron beam irradiation. The calculating means loads the image, which is captured by the photographing means, to compare the loaded image with the image luminance stored in the storage means, thereby deciding a state of electron beam irradiation. | 03-17-2011 |
20110084221 | ELECTRON BEAM IRRADIATION APPARATUS FOR OPEN-MOUTHED CONTAINERS - The apparatus has a rotating body | 04-14-2011 |
Toru Hikosaka, Osaka JP
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20090014008 | Nasal Respiration Mask - According to the present invention, there is provided a nasal respiratory mask contacting with the face of a user for supplying respiratory positive-pressure gas to the nose of the user, comprising at least a part attached tightly to the face that is attached tightly to the face of the user; a frame-fitting part for fitting to a frame; and an elastic connecting part that connects elastically the part attached tightly to the face with the frame-fitting part, wherein a facial side of the elastic connecting part is kept apart from the frame-fitting part side thereof for a required distance even in the absence of applied respiratory positive pressure. | 01-15-2009 |
20090250065 | HEADGEAR AND ITS MANUFACTURING METHOD - A headgear suitable for wearing a respiratory mask system wearing on the head of a user is provided, wherein it can be easily manufactured, the leakage of the positive pressure gas when pressurized is reduced, and a good wearing feel is achieved. The headgear is adapted to secure a respiratory mask, which contacts the face of the user to supply a positive pressure gas for respiration to the user, to the head of user. The headgear has a head mounted portion which is worn on the occipital of the user and a strap ( | 10-08-2009 |
Toshifumi Hikosaka, Kanonji-Shi JP
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20140014284 | MANUFACTURING METHOD FOR NONWOVEN FABRIC - There is provided a method for producing a nonwoven fabric that can produce a nonwoven fabric having high strength, high bulk and softness. The method for producing a nonwoven fabric according to the invention comprises a step of supplying a water-containing paper-making material onto a support to form a paper layer | 01-16-2014 |
Toshihiro Hikosaka, Kosai-Shi JP
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20150224898 | SEAT RECLINING APPARATUS FOR VEHICLE SEAT - A seat reclining apparatus including a base member, a rotatable cover member with an internal tooth gear, three tooth plates with external tooth gears, a pivotable cam member on an inner peripheral side of the tooth plates, a biasing member biasing each of the tooth plates, three guide projections projecting from the tooth plates toward the cover member, an annular grooved portion in the cover member, and three guide surfaces whose one or two being formed on an inner peripheral wall surface of the annular grooved portion, the remainder of the three guide surfaces being formed on the outer peripheral wall surface thereof, wherein the three guide surfaces serve to restrain displacement of the three tooth plates toward the lock position when the respective guide projections are allowed to run upon the corresponding guide surfaces. | 08-13-2015 |
Toshiki Hikosaka, Tokyo JP
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20100224887 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor multilayer structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer of the semiconductor multilayer structure; a second electrode provided on the second semiconductor layer of the semiconductor multilayer structure; and a third electrode connected to the second electrode. The second electrode is provided between the first electrode and the third electrode as viewed in a direction perpendicular to a major surface of the semiconductor multilayer structure, and includes: a first region having at least one notch extending toward a route connecting between the first electrode and the third electrode; a second region provided around the first electrode and having no notch; and a third region provided around the third electrode and having no notch. | 09-09-2010 |
20110143463 | VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS - According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet. | 06-16-2011 |
20110147775 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights. | 06-23-2011 |
20110147776 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light. | 06-23-2011 |
20110197808 | CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR - Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing In | 08-18-2011 |
20110198561 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 08-18-2011 |
20110198583 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains In | 08-18-2011 |
20110198633 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In | 08-18-2011 |
20110204394 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes Al | 08-25-2011 |
20110204411 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga | 08-25-2011 |
20110215351 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t | 09-08-2011 |
20120056157 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-08-2012 |
20120061713 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode. | 03-15-2012 |
20130069098 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights. | 03-21-2013 |
20130146924 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light. | 06-13-2013 |
20130200390 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t | 08-08-2013 |
20130292644 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 11-07-2013 |
20140077159 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-20-2014 |
20140109831 | VAPOR DEPOSITION METHOD AND VAPOR DEPOSITION APPARATUS - According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet. | 04-24-2014 |
20140110667 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 04-24-2014 |
20140117309 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga | 05-01-2014 |
20140124735 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In | 05-08-2014 |
20140209013 | CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR HAVING A MULTIQUANTUM WELL STRUCTURE - A crystal growth method for nitride semiconductors, including the steps of growing a first semiconductor layer containing In | 07-31-2014 |
20140339500 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 11-20-2014 |
Toshiki Hikosaka, Kanagawa-Ken JP
Patent application number | Description | Published |
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20120012814 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 01-19-2012 |
20120032209 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer. | 02-09-2012 |
20120132943 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×10 | 05-31-2012 |
20120138889 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-07-2012 |
20120138890 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer. | 06-07-2012 |
20120138985 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face. | 06-07-2012 |
20120295377 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate. | 11-22-2012 |
20120298952 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations. | 11-29-2012 |
20120299014 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 11-29-2012 |
20120299015 | NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE - According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees. | 11-29-2012 |
20130087760 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10 | 04-11-2013 |
20130203192 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face. | 08-08-2013 |
20130234106 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer. | 09-12-2013 |
20130234151 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Al | 09-12-2013 |
20130237036 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface. | 09-12-2013 |
20130309796 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 11-21-2013 |
20140048819 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer. | 02-20-2014 |
20140061693 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008. | 03-06-2014 |
20140077239 | SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness. | 03-20-2014 |
20140084296 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER - A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit. | 03-27-2014 |
20140084338 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al composition layer, a low Al composition layer, an intermediate unit and a second high Ga composition layer. The first layer is provided on the foundation layer. The high Al composition layer is provided on the first layer. The low Al composition layer is provided on the high Al composition layer. The intermediate unit is provided on the low Al composition layer. The second layer is provided on the intermediate unit. The first layer has a first tensile strain and the second layer has a second tensile strain larger than the first tensile strain. Alternatively, the first layer has a first compressive strain and the second layer has a second compressive strain smaller than the first compressive strain. | 03-27-2014 |
20140124790 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Al | 05-08-2014 |
20140138699 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al | 05-22-2014 |
20140153602 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-05-2014 |
20140167094 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion. | 06-19-2014 |
20140319460 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 10-30-2014 |
20140346439 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part. | 11-27-2014 |
20150221728 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al | 08-06-2015 |
20150236200 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 08-20-2015 |
20150270445 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 09-24-2015 |
20150287589 | SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness. | 10-08-2015 |
Toshiki Hikosaka, Kanagawa JP
Patent application number | Description | Published |
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20120056224 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element. | 03-08-2012 |
20120056526 | LIGHT EMITTING DEVICE - A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element. | 03-08-2012 |
Toshiki Hikosaka, Fuchu-Shi JP
Patent application number | Description | Published |
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20110037049 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of In | 02-17-2011 |
Toshiki Hikosaka, Kawasaki JP
Patent application number | Description | Published |
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20150200255 | NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a nitride semiconductor element includes a functional layer and a stacked body. The stacked body includes a GaN intermediate layer, a low Al composition layer, a high Al composition layer, and a first Si-containing layer. The low Al composition layer includes a nitride semiconductor having a first Al composition ratio. The low Al composition layer is provided between the GaN intermediate layer and the functional layer. The high Al composition layer includes a nitride semiconductor having a second Al composition ratio. The high Al composition layer is provided between the GaN intermediate layer and the low Al composition layer. The second Al composition ratio is higher than the first Al composition ratio. The first Si-containing layer is provided between the GaN intermediate layer and the high Al composition layer. | 07-16-2015 |
20150380495 | NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor layer spreading along a first surface is provided. The nitride semiconductor layer includes a first region and a second region. A length of the first region in a first direction parallel to the first surface is longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction. The second region is arranged with the first region in the second direction. A length of the second region in the first direction is longer than a length of the second region in the second direction. A c-axis being is tilted with respect to the second direction for the first region and the second region. The c-axis intersects a third direction perpendicular to the first surface. | 12-31-2015 |