Patent application number | Description | Published |
20090014008 | Nasal Respiration Mask - According to the present invention, there is provided a nasal respiratory mask contacting with the face of a user for supplying respiratory positive-pressure gas to the nose of the user, comprising at least a part attached tightly to the face that is attached tightly to the face of the user; a frame-fitting part for fitting to a frame; and an elastic connecting part that connects elastically the part attached tightly to the face with the frame-fitting part, wherein a facial side of the elastic connecting part is kept apart from the frame-fitting part side thereof for a required distance even in the absence of applied respiratory positive pressure. | 01-15-2009 |
20090173343 | Nasal Respiratory Mask System and Connection/Disconnection Means Used Therein - The present invention relates to a nasal respiratory mask system comprising: a nasal mask that is tightly attached to the face of a user and serves as means for leading positive-pressure breathing gas to the nose of the user, a frame to keep the nasal mask at a predetermined position, and a headgear that is mounted on the head in order to attach the nasal mask tightly to the face; wherein, the headgear comprises, on the tip thereof, a headgear strap for adjusting the length of the headgear, the headgear strap comprises a headgear fastener that serves as means for connection/disconnection with the frame, the frame comprises a fastener catch that engages with the headgear fastener, and the fastener catch comprises an axisymmetric guide whose (rotation) axis is the insertion direction of the headgear fastener. The present invention provides a nasal respiratory mask system with which a headgear can be easily connected at the beginning of wearing, twisting of the headgear during wearing is prevented, and disassembly upon daily washing is easy. | 07-09-2009 |
20090250065 | HEADGEAR AND ITS MANUFACTURING METHOD - A headgear suitable for wearing a respiratory mask system wearing on the head of a user is provided, wherein it can be easily manufactured, the leakage of the positive pressure gas when pressurized is reduced, and a good wearing feel is achieved. The headgear is adapted to secure a respiratory mask, which contacts the face of the user to supply a positive pressure gas for respiration to the user, to the head of user. The headgear has a head mounted portion which is worn on the occipital of the user and a strap ( | 10-08-2009 |
20100043800 | Nasal respiratory mask system - A light weight nasal respiratory mask system securing airtightness of a mounting section between a nasal mask and a frame is provided. | 02-25-2010 |
Patent application number | Description | Published |
20130285158 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer. | 10-31-2013 |
20140094027 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure. | 04-03-2014 |
20140138708 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 05-22-2014 |