Patent application number | Description | Published |
20130029473 | METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME - A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted. | 01-31-2013 |
20130093059 | Bonded Substrate And Method Of Manufacturing The Same - A bonded substrate, the surface roughness of which is reduced, and a method of manufacturing the same. The bonded substrate includes a base substrate and an intermediate layer disposed on the base substrate. The intermediate layer has a greater bubble diffusivity than the base substrate. A thin film layer is bonded onto the intermediate layer, and has a different chemical composition from the base substrate. | 04-18-2013 |
20130093063 | BONDED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A bonded substrate having a plurality of grooves and a method of manufacturing the same. The method includes the following steps of implanting ions into a first substrate, thereby forming an ion implantation layer, bonding the first substrate to a second substrate having a plurality of grooves in one surface thereof such that the first substrate is bonded to the one surface, and cleaving the first substrate along the ion implantation layer. | 04-18-2013 |
20130323906 | Method Of Manufacturing Thin-Film Bonded Substrate Used For Semiconductor Device - A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other. | 12-05-2013 |
Patent application number | Description | Published |
20090013302 | METHODS OF ARRANGING MASK PATTERNS RESPONSIVE TO ASSIST FEATURE CONTRIBUTION TO IMAGE INTENSITY AND ASSOCIATED APPARATUS - Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of an assist feature to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of an assist feature to image intensity on a main feature. Neighboring regions of the main feature are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values | 01-08-2009 |
20110119644 | METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS - Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values | 05-19-2011 |
20120094492 | METHOD OF FORMING PATTERN, RETICLE, AND COMPUTER READABLE MEDIUM FOR STORING PROGRAM FOR FORMING PATTERN - A method of forming a pattern includes forming a plurality of target patterns, forming a plurality of pitch violating patterns that make contact with the plurality of target patterns and are disposed between the plurality of target patterns, classifying the plurality of pitch violating patterns into a first region and a second region adjacent to the first region, and forming an initial pattern corresponding to one of the first region and the second region. | 04-19-2012 |
20120122286 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask. | 05-17-2012 |