Patent application number | Description | Published |
20080311153 | ATTENUATED INFLUENZA VIRUS AND A LIVE VACCINE COMPRISING THE SAME - The present invention relates to an isolated attenuated influenza virus strain and a live vaccine comprising the same. The isolated attenuated influenza virus strain is prepared by cold-adaptation of a mother strain which carries 6 internal genomes of A/PR/8/34(H1N1) and two surface antigens HA and NA of A/Aichi/2/68(H3N2). The attenuated influenza virus strain and the live vaccine of the present invention are useful for prevention of seasonal influenza episodes and sudden outbreak of influenza pandemics of predicted or unknown identity, since they have safety, efficacy, high production yield, immediate protection against variety of influenza subtypes and prolonged protection against specific influenza subtype. | 12-18-2008 |
20120171243 | METHOD OF PREPARING LIVE VIRAL VACCINES BY GENETIC ENGINEERING OF VIRAL GENOME - Disclosed is an attenuation method of an influenza virus, that is, a reassortant virus and a preparation method thereof. The disclosed reassortant virus has, in a ratio of 6:2, genes encoding a recombinant non-toxic protein and a wild type non-toxic protein, and genes encoding toxic proteins, HA (hemagglutinin) and NA (neuraminidase), of an influenza virus, the recombinant non-toxic protein consisting of a substituted caspase recognition sequence without a change of a protein size within the wild type non-toxic protein of the influenza virus. The disclosed attenuated influenza virus shows a high attenuation without a reduction of productivity in a fertilized egg. Accordingly, the method can be used as an economically efficient live vaccine preparation method which has both safety and efficiency and can use a fertilized egg as a production system. Also, since a protein is not removed or modified during attenuation, the method can be used in combination with a conventional attenuated vaccine preparation technology such as cold-adaptation. | 07-05-2012 |
20130163873 | Detecting Separator Lines in a Web Page - A system and method of detecting separator lines in a web page may include determining coordinates of visible web elements on a web page, generating an edge image of the web page based on the coordinates of the web elements, filtering edges belonging to non-separator line elements within the edge image, detecting horizontal lines within the edge image, detecting vertical lines within the edge image, and filtering short lines within the edge image. A system for detecting separator lines in a web page may include a memory device, and a processor communicatively coupled to the memory, in which the processor determines coordinates of visible web elements on a web page, generates an edge image of the web page based on the coordinates of the web elements, filters edges belonging to non-separator line elements within the edge image, detects horizontal lines within the edge image, detects vertical lines within the edge image, and filters short lines within the edge image. | 06-27-2013 |
Patent application number | Description | Published |
20090309144 | CMOS Image sensor having a crosstalk prevention structure - In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P | 12-17-2009 |
20100055823 | Methods of manufacturing CMOS image sensors - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer. | 03-04-2010 |
20110163363 | COMS image sensors and methods of manufacturing the same - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer. | 07-07-2011 |
20110204468 | Image sensor and method of manufacturing the same - Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern. | 08-25-2011 |
20120164783 | CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME - In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P | 06-28-2012 |
Patent application number | Description | Published |
20130170248 | LIGHT GUIDE PLATE HAVING SAG CONTROL PATTERNS AND BACK LIGHT UNIT USING THE SAME - The present invention relates to a backlight unit with sag control patterns, comprising a light source formed in a side surface of a light guide plate; and a plurality of optical patterns formed on a lower surface of the light guide plate, sag of the plurality of optical patterns increasing as the optical patterns become more distant from the light source. By controlling sag of optical patterns formed in a light guide plate, efficiency of light emitted from a backlight unit can be improved and uniformity of the light can be maintained. Also, since sag of optical patterns can be controlled, by increasing the number of optical patterns (by improving fill factor), light efficiency and uniformity can be controlled easily. Also, compared with a conventional method for manufacturing white dot patterns, white dot patterns can be more efficiently manufactured in terms of development time and costs. | 07-04-2013 |
20130272028 | LIGHT GUIDE PLATE FOR PLANE LIGHT SOURCE, METHOD FOR MANUFACTURING THE SAME, AND PLANE LIGHT SOURCE UNIT USING THE SAME - A light guide plate and a plane light source unit are provided. The light guide plate for a plane light source unit includes a plurality of unit pattern regions each having a plurality of optical patterns on surfaces thereof, wherein one or more unit pattern regions have different sag values (height:lens size) of the optical patterns constituting the unit pattern regions. Unit pattern regions are implemented with segmented optical patterns, which are equal in height, from the outside of the light guide plate to the central part thereof, by adjusting the density and size of microlenses, thereby improving the light uniformity and light efficiency and improving the efficiency of manufacturing processes. | 10-17-2013 |
20140016327 | LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a lighting device and a method of manufacturing the same, the lighting device includes a diffusion layer diffusing and emitting light incident from a light source; a bead layer adjacently formed to a light emitting surface of the diffusion layer, including a plurality of beads, and having a separation part formed in a region in which the plurality of beads are not present; and a condensing layer formed on the bead layer and condensing light transmitting the separation part to a predetermined portion. The exemplary embodiment of the present invention can form the separation part on the diffusion layer and the condensing layer by bonding beads to the diffusion layer and thus, can condense the light transmitting the diffusion layer to the condensing layer through the separation part, thereby easily reducing the UGR without disposing the separate barrier rib structure between the diffusion layer and the condensing layer. | 01-16-2014 |
20140133160 | Optical Plate and Illuminating Member Using the Same - Disclosed is an optical plate and an illuminating member, and particularly an optical plate for reducing UGR, which has a plurality of micro lens patterns formed on a base substrate, a fill factor of the micro lens patterns being in range of 0.5 to 1.0. | 05-15-2014 |
20140140068 | LIGHTING DEVICE - The present invention relates to an lighting device capable of reducing UGR (Unified Glare Rating) characterized by comprising the frame portion formed at the peripheral area in which the printed circuit board mounted with a light source and the light source are arranged, and the inserting portion into which the diffusing plate and the optical plate are inserted at the inside of the frame portion simultaneously. Particularly, an air gap can be formed on the closed adhered surface of the optical plate and the diffusing plate. | 05-22-2014 |
20140152917 | ELECTRODE MEMBER AND TOUCH PANEL INCLUDING THE SAME - Disclosed is a touch panel. The touch panel includes a substrate, and an electrode part formed in a mesh shape on the substrate. The electrode part includes a resin layer comprising first and second sub-patterns, and a transparent electrode on the first sub-pattern. A ratio of a width of the first sub-pattern to a width of the second sub-pattern is in a range of 1:0.01 to 1:0.5. | 06-05-2014 |
20140168993 | LIGHTING DEVICE - Disclosed is a light device comprising: a diffusion unit for diffusing and radiating light incident from a light source; and a condensing unit installed on a light radiating surface of the diffusion unit, including a micro lens array of lenses having sag determined depending on one of a light emitting area of the lighting device and total light flux of the lighting device. Thus, the lighting device can reduce a light flux emitted at the angle between 65 deg and 90 deg, thereby meeting UGR conditions. | 06-19-2014 |
20140192540 | ILLUMINATING MEMBER FOR REDUCING UNIFIED GLARE RATING AND LIGHTING DEVICE USING THE SAME - Disclosed is a lighting device capable of reducing UGR (Unified Glare Rating). in a illuminating member, reflection efficiency of light significantly scattering to the left and right among light applied to the air gap through the diffusion plate is increased using the adhesion material pattern layer of periphery surrounding an air gap, and simultaneously, the UGR may be reduced by removing the process disposing the pattern with a specific structure and increasing the process efficiency. | 07-10-2014 |
20140301086 | OPTICAL SHEET AND LIGHTING DEVICE INCLUDING THE SAME - Provided are an optical sheet used for a lighting device, and the lighting device, the optical sheet comprising: a base plate; and an optical plate including a plurality of micro pattern units formed on the base plate, wherein the respective micro pattern units have any one shape of a quadrangular pyramid shape, a conical shape, and a polypyramid shape, wherein an edge angle formed between the base plate and a side surface of the micro pattern units is determined within a range of 15 degrees to 45 degrees. | 10-09-2014 |
20150248799 | FINGERPRINT IDENTIFICATION SYSTEM FOR VEHICLE AND VEHICLE SMART KEY INCLUDING THE SAME - A fingerprint identification system including a starting button unit including a starting touch panel to extract a fingerprint of a user, a door handle including a door touch panel to extract the fingerprint of the user; and a control unit to control starting of a vehicle by comparing the extracted fingerprint of the user with a fingerprint, which is previously stored, and to generate an alarm signal. The starting touch panel is provided on a starting button unit. | 09-03-2015 |
20160026844 | FINGERPRINT SENSOR AND TOUCH DEVICE INCLUDING THE SAME - A fingerprint sensor includes a first substrate, a second substrate on the first substrate, a first electrode and a first chip on the first substrate and a second electrode and a second chip on the second substrate. The first substrate includes a first area and a second area, the second substrate includes a third area and a fourth area, the first electrode is provided on the first area, the first chip is provided on the second area, the second electrode is provided on the third area, and the second chip is provided on the fourth area. | 01-28-2016 |
Patent application number | Description | Published |
20080284006 | Semiconductor devices including interlayer conductive contacts and methods of forming the same - In a semiconductor device and a method of forming the same, the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an upper portion of the first conductive pattern being of a first width, an upper surface of the first conductive pattern being recessed relative to the upper surface of the first insulating layer so that the upper surface of the first conductive pattern has a height relative to the underlying contact region that is less than a height of the upper surface of the first insulating layer relative to the underlying contact region; and a second conductive pattern contacting the upper surface of the first conductive pattern, a lower portion of the second conductive pattern being of a second width that is less than the first width. | 11-20-2008 |
20110097895 | SEMICONDUCTOR DEVICES INCLUDING INTERLAYER CONDUCTIVE CONTACTS AND METHODS OF FORMING THE SAME - In a semiconductor device and a method of forming the same, the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an upper portion of the first conductive pattern being of a first width, an upper surface of the first conductive pattern being recessed relative to the upper surface of the first insulating layer so that the upper surface of the first conductive pattern has a height relative to the underlying contact region that is less than a height of the upper surface of the first insulating layer relative to the underlying contact region; and a second conductive pattern contacting the upper surface of the first conductive pattern, a lower portion of the second conductive pattern being of a second width that is less than the first width. | 04-28-2011 |
20110215072 | PLASMA APPARATUS HAVING A CONTROLLER FOR CONTROLLING A PLASMA CHAMBER AND METHODS FOR CONTROLLING THE PLASMA APPARATUS - Provided is a method for controlling a plasma apparatus. The method includes measuring a plasma spectrum in a plasma chamber by an optical emission spectroscopy, setting a baseline of the measured plasma spectrum, normalizing the measured plasma spectrum by dividing a value of the measured plasma spectrum by a value of the baseline, and controlling the plasma chamber by setting parameters of a plasma process using the normalized plasma spectrum. A plasma apparatus is also provided. | 09-08-2011 |
20150162247 | SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE INCLUDING THE SAME AND MANUFACTURING METHODS THEREOF - The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed. | 06-11-2015 |
Patent application number | Description | Published |
20090011583 | Method of manufacturing a semiconductor device - A gate structure is formed on a substrate. An insulating interlayer is formed covering the gate structure. The substrate is heat treated while exposing a surface of the insulating interlayer to a hydrogen gas atmosphere. A silicon nitride layer is formed directly on the interlayer insulating layer after the heat treatment and a metal wiring is formed on the insulating interlayer. The metal wiring may include copper. Heat treating the substrate while exposing a surface of the interlayer insulating layer to a hydrogen gas atmosphere may be preceded by forming a plug through the first insulating interlayer that contacts the substrate, and the metal wiring may be electrically connected to the plug. The plug may include tungsten. | 01-08-2009 |
20090176124 | Bonding pad structure and semiconductor device including the bonding pad structure - A bonding pad structure for a semiconductor device includes a first lower metal layer beneath a second upper metal layer in a bonding region of the device. The lower metal layer is formed such that the metal of the lower metal layer is absent from the bonding region. As a result, if damage occurs to the structure during procedures such as probing or bonding at the bonding region, the lower metal is not exposed to the environment. Oxidation of the lower metal layer by exposure to the environment is prevented, thus improving reliability of the device. | 07-09-2009 |
20110003455 | METHODS FOR FABRICATING IMPROVED GATE DIELECTRICS - Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide alternatives to conventional GPDX processes and provide the improved leakage resistance without incurring the degree of increased gate electrode resistance associated with GPDX processes. Each of the methods includes forming a first opening to expose an active area region, forming an oxidation control region on the exposed portion and then forming a second opening whereby a peripheral region free of the oxidation control region is exposed for formation of a gate dielectric layer. The resulting gate dielectric layers are characterized by a thinner central region surrounded or bounded by a thicker peripheral region. | 01-06-2011 |
20110295554 | Equipment For Manufacturing Semiconductor Device And Seasoning Process Method Of The Same - Disclosed is an apparatus for processing a semiconductor and a method for generating a seasoning process of a reaction chamber. The method may include generating plasma in the reaction chamber using a production process recipe, obtaining at least one reference measurement value related to a byproduct of the generated plasma, performing a plurality of seasoning tests on the chamber to obtain a plurality of test results, generating an empirical model by forming at least one relational expression correlating variables manipulated during the performing of the plurality of seasoning tests to the plurality of test results, and estimating a seasoning process by using the at least one relational expression to estimate at least one estimated calculation value. | 12-01-2011 |
20120055908 | ETCHING SYSTEM AND METHOD OF CONTROLLING ETCHING PROCESS CONDITION - Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result. | 03-08-2012 |
20150097251 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed. | 04-09-2015 |
20160064380 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed. | 03-03-2016 |
Patent application number | Description | Published |
20120061641 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 03-15-2012 |
20120068152 | GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed. | 03-22-2012 |
20120068153 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 03-22-2012 |
20130099199 | NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods. | 04-25-2013 |
20130112944 | NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode. | 05-09-2013 |
20130252363 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 09-26-2013 |
20130313514 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer. | 11-28-2013 |
20140203240 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 07-24-2014 |
20140206116 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures. | 07-24-2014 |
20140209859 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores. | 07-31-2014 |
20140217357 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer. | 08-07-2014 |
20140217361 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 08-07-2014 |
20150118777 | Nano-structure semiconductor light emitting device - A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer. | 04-30-2015 |
20150155432 | NANO STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND SYSTEM HAVING THE SAME - A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed. | 06-04-2015 |
20150194571 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions. | 07-09-2015 |
20150236202 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer. | 08-20-2015 |
20150303350 | NANO-STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer. | 10-22-2015 |
20150325745 | THREE-DIMENSIONAL LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core. | 11-12-2015 |
20150372186 | METHOD FOR MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. | 12-24-2015 |
20150372195 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 12-24-2015 |
20160099376 | METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity. | 04-07-2016 |
Patent application number | Description | Published |
20120230855 | SCROLL COMPRESSOR - A scroll compressor includes a fixed scroll having a fixed wrap, and an orbiting scroll having an orbiting wrap engaged with the fixed wrap to define a first compression chamber between an inner surface of the fixed wrap and an outer surface of the orbiting wrap, and to define a second compression chamber between an inner surface of the orbiting wrap and an outer surface of the fixed wrap. A rotation shaft is provided with an eccentric portion at one end thereof to drive the orbiting scroll. A protruding portion protrudes inwardly from an inner end of the fixed wrap, and contacts the orbiting wrap. A distance between a center of the eccentric portion and a tangent line at a contact point between the protruding portion and the orbiting wrap at an end of the first compression chamber is smaller than a radius of the eccentric portion. | 09-13-2012 |
20120275946 | SCROLL COMPRESSOR - A scroll compressor is provided that may include a fixed scroll having a fixed wrap, an orbiting scroll engaged with the fixed wrap to define a compression chamber, a rotation shaft having a shaft portion eccentrically located with respect to the orbiting scroll, a pin portion located at an end of the shaft portion and having a diameter smaller than a diameter of the shaft portion, and a bearing located at an end of the pin portion, and a drive that drives the rotation shaft. The pin portion may be inserted through one of the fixed scroll or the orbiting scroll, and the orbiting scroll may be rotatably coupled to the bearing. | 11-01-2012 |
20130089449 | SCROLL COMPRESSOR WITH BYPASS HOLE - A scroll compressor is provided. The scroll compressor may include a fixed scroll having a fixed wrap with a thickness that varies along a compression path and a disk having a discharge and at least one bypass hole formed therein, and an orbiting scroll having an orbiting wrap with a thickness that varies along the compression path and that orbits with respect to the fixed scroll to define a compression space between the respective wraps. The compressor may also include a rotation shaft coupled to the orbiting scroll, and a driver that rotates the rotation shaft. A diameter of each bypass hole may be greater than one third of an effective diameter of the discharge hole. | 04-11-2013 |
20130089450 | SCROLL COMPRESSOR WITH OLDHAM RING - A scroll compressor is provided that may include a fixed scroll having a fixed wrap and a plurality of first key recesses, an orbiting scroll engaged with the fixed scroll to define compression chambers and having an orbiting wrap and a plurality of second key recesses, a drive having a rotation shaft coupled to the orbiting scroll such that one end portion thereof overlaps the orbiting wrap in a lateral direction, and an Oldham ring having a plurality of first and second keys coupled to the plurality of first and second key recesses, respectively. The plurality of second keys may at least temporarily protrude from the plurality of second key recesses in a radial direction during the orbiting motion. Further, the plurality of second key recesses and the plurality of second keys may be disposed to obtain maximum contact areas therebetween at a moment of start of discharging. | 04-11-2013 |
20130115123 | SCROLL COMPRESSOR - A scroll compressor may include a blocking portion provided in a fixed component thereof, and positioned adjacent to a discharge hole formed in an orbiting scroll of the compressor. The blocking portion may temporarily obscure the discharge hole upon initiation of a discharging operation, thereby preventing refrigerant discharged into a discharging space from flowing back into a compression chamber, without the use of a separate check valve. Such a blocking portion may prevent an increase in overall compressor noise due to noise typically generated by a check valve. Such a blocking portion may also prevent degradation in compressor reliability levels due to valve damage and increases in fabricating costs due to the addition of the valve. | 05-09-2013 |
Patent application number | Description | Published |
20100267684 | USE OF BIOLOGICAL SURFACTANT AS ANTI-INFLAMMATORY AGENT AND TISSUE PRESERVATIVE SOLUTION - The present invention relates to a use of a biological surfactant as an anti-inflammatory agent and a tissue preservative solution. More particularly, the present invention is directed to an anti-inflammatory agent and a tissue preservative solution comprising a biological surfactant which blocks a reaction of a proinflammatory factor with a receptor by emulsifying the proinflammatory factor. | 10-21-2010 |
20120219504 | COMPLEX OF A PROTEIN COMPRISING ZINC OXIDE-BINDING PEPTIDES AND ZINC OXIDE NANOPARTICLES, AND USE THEREOF - The present invention relates to a complex of a protein comprising zinc oxide-binding peptides and zinc oxide nanoparticles, to the use thereof as a drug delivery carrier for manufacturing medicines, and to a vaccine composition and a contrast agent comprising the composite. The protein comprising zinc oxide-binding peptides significantly improves the in vivo availability of zinc oxide-binding peptides, and therefore the complex of the present invention can be used not only as a drug delivery carrier for in vivo drug delivery or intracellular drug delivery, but also for in vivo imaging or cell imaging. The complex can be used for producing separating agents for effectively separating biological materials, therapeutic agents for hyperthermia, etc., contrast agents for MRI, and beads applicable to biosensors. | 08-30-2012 |
20150290219 | Composition Comprising GPCR19 Agonist as an Active Ingredient for Preventing or Treating Allergic Dermatitis - The present invention is about a pharmaceutical composition, an oral preparation, and an injection preparation containing a G protein-coupled Receptor19 (GPCR19) agonist, specifically sodium taurodeoxycholate (HY2191) and its derivative, as an active ingredient for preventing or treating allergic skin diseases. The present invention is also about an external preparation and a cosmetic composition containing said pharmaceutical composition for preventing and improving allergic skin diseases. The said pharmaceutical composition shows an excellent efficacy in treating and improving allergic dermatitis compared with the steroid ointments or immunosuppressive ointments currently used. The said pharmaceutical composition reduces the level of serum IgE, which is a major factor causing allergic dermatitis, increases TH1 cytokine alleviating allergic dermatitis and reduces TH2 cytokine that exacerbates allergic dermatitis. The said pharmaceutical composition also reduces infiltration of a mast cell, eosinophil, and neutrophil in dermis and ameliorates clinical symptoms such as erythema, hemorrhage, edema, excoriation, erosion, scaling and dryness. Thus, the said pharmaceutical composition can be used to prevent and treat allergic skin diseases. | 10-15-2015 |
Patent application number | Description | Published |
20100053451 | Apparatus and method for frame interpolation based on accurate motion estimation - An apparatus and a method for frame interpolation based on precision motion estimation are provided. The apparatus for frame interpolation may generate an interpolation frame to restore images based on a motion vector which is determined after a motion vector is determined based on a rotation element in addition to forward motion and backward motion between frames. | 03-04-2010 |
20150036907 | APPARATUS AND METHOD FOR RECONSTRUCTING IMAGES BY SELECTING IMAGE RECONSTRUCTION MODE - Provided are a medical imaging apparatus and a method of reconstructing an image capable of selecting an image reconstruction mode. The method of reconstructing an image using a medical imaging apparatus may include displaying a user interface indicating at least one of a first mode for reducing time required for reconstruction of the image and a second mode for acquiring the image with high resolution, receiving an input selecting one of the first mode and the second mode as a selected mode, displaying at least one reconstruction option corresponding to the selected mode, receiving another input selecting at least one reconstruction option among the at least one displayed reconstruction option, and reconstructing the image according to the at least one selected reconstruction option and selected mode. | 02-05-2015 |
20150108977 | MAGNETIC RESONANCE IMAGING APPARATUS AND METHOD - The MRI apparatus includes a data processor, which time-serially performs undersampling on MR signals respectively received by coil channels included in a radio frequency (RF) multi-coil to acquire undersampled K-t space data, and an image processor that acquires a time-space correlation coefficient, based on noise information of the coil channels, and restores pieces of unacquired line data from the undersampled K-t space data by using the time-space correlation coefficient to acquire restored K-t space data, thereby increasing an accuracy of the time-space correlation coefficient to improve a quality of an image. | 04-23-2015 |
20150108979 | MAGNETIC RESONANCE IMAGING APPARATUS AND METHOD - A magnetic resonance imaging (MRI) apparatus and method are provided. The MRI apparatus includes a first interpolator configured to generate a plurality of first interpolation data by performing calibration on a plurality of undersampled K-space data obtained from a plurality of channel coils in a radio frequency (RF) multi-coil, respectively, and a second interpolator configured to generate a plurality of second interpolation data by performing calibration on a plurality of filtered data obtained by filtering the first interpolation data using a plurality of high-pass filters. | 04-23-2015 |
20150160319 | MAGNETIC RESONANCE IMAGING APPARATUS AND CONTROL METHOD THEREOF - An MRI apparatus includes: a receive coil assembly including channels, and configured to receive an MR signal from an object; a data generator configured to generate undersampled image data on a k-space based on the MR signal; and a reconstructed image generator configured to generate a first reconstructed image from the undersampled image data using a parallel imaging method, and a second reconstructed image from the undersampled image data using compressed sensing. According to the MRI apparatus, since image reconstruction is performed using random undersampled image data, a parallel imaging method, and compressed sensing, it is possible to increase a speed of image acquisition and, at the same time, to improve the quality of images. | 06-11-2015 |
Patent application number | Description | Published |
20140356843 | PORTABLE APPARATUS AND SCREEN DISPLAYING METHOD THEREOF - A screen displaying method in a portable apparatus includes displaying a personal screen of an application executed by the portable apparatus in response to input user identification information; detecting a touch on the personal screen; and controlling the personal screen in response to the touch to display a second screen, wherein the second screen includes at least a portion of a common screen which is a screen of an external device connectable through a network. | 12-04-2014 |
20150067540 | DISPLAY APPARATUS, PORTABLE DEVICE AND SCREEN DISPLAY METHODS THEREOF - A portable device and screen display methods of a display apparatus connectable to a portable device are provided. The method includes displaying a collaborative screen including a plurality of operation areas on the display apparatus; allocating at least one of the operation areas to the portable device; displaying the collaborative screen with the allocated operation area being distinguishable; and giving notification so that the allocated operation area is displayed on a corresponding portable device. | 03-05-2015 |
20150084894 | SYSTEM AND METHOD OF SHARING OBJECT BASED ON KNOCKING INPUT - A system and method of sharing an object based on a knocking input are provided. The method includes detecting a knocking input on sharing device, determining at least one object displayed on a screen of the sharing device based on the knocking input, and determining at least one counterpart device to share at least one object with, and sharing the at least one object with the at least one counterpart device, wherein the at least one object displayed on the screen of the sharing device is also displayed on a screen of the at least one counterpart device after being synchronized. | 03-26-2015 |
20150095798 | METHOD AND DEVICE FOR SHARING CONTENT - A content sharing method is provided. The content sharing method is performed by a display device connected to at least one user terminal. The content sharing method includes displaying content on the display device, receiving information included in a transparent layer of a first user terminal among the at least one user terminal from the first user terminal, and overlapping the transparent layer, including the information received from the first user terminal, on the displayed content. | 04-02-2015 |
20150177962 | DISPLAY APPARATUS AND METHOD OF DISPLAYING IMAGE BY DISPLAY APPARATUS - A display apparatus and a method of displaying an image by the display apparatus are provided. The display apparatus and the method include displaying a first content image on the display apparatus, detecting a first touch from a bezel of the display apparatus, displaying a folding area on a first edge of the first content image in response to a location of the first touch, and moving the first content image to the folding area from an adjacent folding area of the first content image, which contacts the folding area, in response to holding time of the first touch. | 06-25-2015 |
20160034151 | METHOD AND DEVICE FOR PROVIDING CONTENT - A method and a device for providing content are provided. The device includes a display configured to display content, and an interface configured to receive a first input that selects a part of the displayed content, and a second input that requests to change a size of the displayed content. The device further includes a controller configured to control the display to display the selected part of the displayed content and an unselected part of the displayed content by changing a size of the selected part and a size of the unselected part to be different from each other, in response to the interface receiving the second input. | 02-04-2016 |