Motohiro
Satoshi Motohiro, Yokohama JP
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20100232806 | OPTICAL TRANSMITTER DEVICE AND OPTICAL TRANSMITTER MODULE - Provided are an optical transmitter device and an optical transmitter module which are capable of reducing the optical transmitter module size while maintaining a state where an excellent optical transmission waveform quality is obtained over a wide range of frequencies. The optical transmission module ( | 09-16-2010 |
20110085796 | OPTICAL COMMUNICATION MODULE AND CONTROL METHOD FOR OPTICAL COMMUNICATION MODULE - An optical communication module includes a laser that emits laser light, and an electro-absorber that absorbs the laser light, which is emitted from the laser, according to a voltage modulated based on a modulating signal and a bias voltage. The optical communication module detects data that varies correlatively with the temperature of the electro-absorber, and sets the bias voltage, which is associated with the detected data, on the basis of relational data specifying at least the relationship between the bias voltage and the data. | 04-14-2011 |
Tomoyoshi Motohiro, Seto-Shi JP
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20100244656 | Antenna devices - An antenna device is provided with a first connecting electrode, a first tunnel diode, a first antenna member and a fixed electrode. The first connecting electrode is configured to be connected to a fixed potential via a load. The first tunnel diode has a pair of electrodes. One of the electrodes of the first tunnel diode is connected to the first connecting electrode, and the other electrode of the first tunnel diode is connected to the first antenna member. The first antenna member has a conductive property and includes a first portion and a second portion. The first portion of the first antenna member is connected to the other electrode of the first tunnel diode. The fixed electrode is connected to the second portion of the first antenna member. The fixed electrode is configured to be connected to the fixed potential. | 09-30-2010 |
20100258164 | PHOTOVOLTAIC FORCE DEVICE - The present invention provides a hot carrier type photovoltaic device capable of effectively improving conversion efficiency even when the residence time of carriers in a light absorbing layer is short. The photovoltaic device includes: a light absorbing layer that absorbs light and generates electrons and holes; an electron moving layer that is provided adjacent to one surface of the light absorbing layer; a hole moving layer that is provided adjacent to the other surface of the light absorbing layer; a negative electrode that is provided on the electron moving layer; and a positive electrode that is provided on the hole moving layer. The electron moving layer has a conduction band that has an energy gap narrower than that of a conduction band of the light absorbing layer and selectively transmits the electrons with a predetermined energy level. The hole moving layer has a valence band that has an energy gap narrower than that of a valence band of the light absorbing layer and selectively transmits the holes with a predetermined energy level. The light absorbing layer includes p-type impurities or n-type impurities. | 10-14-2010 |
20120307950 | NUCLEAR FUSION TARGET, NUCLEAR FUSION DEVICE, AND NUCLEAR FUSION METHOD - An object is to be capable of inducing a nuclear fusion reaction at a relatively high efficiency and downsize a device. A nuclear fusion device | 12-06-2012 |
Tomoyoshi Motohiro, Aichi JP
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20090011579 | Quantum Dot Array And Production Method Therefor, And Dot Array Element And Production Method Therefor - The present invention is a method of manufacturing a quantum dot array having a plurality of columnar parts including a quantum dot on a substrate, the method comprising the steps of obliquely vapor-depositing a material constituting a first barrier layer to become an energy barrier against the quantum dot onto a surface of the substrate, so as to form a plurality of first barrier layers; obliquely vapor-depositing a material constituting the quantum dot with respect to the surface of the substrate, so as to form the quantum dots on the first barrier layers; and obliquely vapor-depositing a material constituting a second barrier layer to become an energy barrier against the quantum dot with respect to the surface of the substrate, so as to form the second barrier layers on the quantum dots. | 01-08-2009 |
Tomoyoshi Motohiro, Seto Aichi JP
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20120222737 | HOT CARRIER ENERGY CONVERSION STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a hot carrier energy conversion structure, and a hot carrier energy conversion structure. The method comprises forming an energy selective contact ESC comprising a tunnelling layer; forming a carrier generation layer on the ESC; and forming a semiconductor contact without a tunnelling layer on the carrier generation layer. | 09-06-2012 |