Patent application number | Description | Published |
20110052749 | MOVABLE PLATEN SUPPORT MECHANISM - An injection molding machine is provided with a linear guide block configured to be guided on a linear guide rail and a guide mounting block which is secured to the linear guide block and supports the movable platen. Two mounting bolts and two adjust bolts are disposed individually at two positions, spanning between the movable platen and the guide mounting block. The size of a gap between the movable platen and the guide mounting block is adjusted by independently tightening the adjust bolts, whereby the horizontal tilt of the movable platen is adjusted. | 03-03-2011 |
20110151043 | MECHANICAL SAFETY DEVICE FOR INJECTION MOLDING MACHINE - A mechanical safety device for an injection molding machine is provided with a laterally openable safety door on the flank of a mold opening/closing portion between a movable platen and a stationary platen. A rod is secured to the stationary platen or a base, and a rail, which ascends and descends as the safety door is closed and opened, is assembled to the rod. The rod is formed with a plurality of engaging step portions and tapered surfaces arranged alternately. On the other hand, a ratchet is rotatably supported on the movable platen. The rail ascends or descends to push up or down the ratchet, thereby locating the ratchet in a position where it engages with the engaging step portions of the rod or a position where it is disengaged from the engaging step portions. | 06-23-2011 |
20120288584 | TOGGLE TYPE MOLD CLAMPING DEVICE - In a toggle type mold clamping device including a plurality of link units, a coupling portion of a first link coupled with a toggle driving link is provided on an outer side of an area between a coupling portion of the toggle driving link coupled with a crosshead and a center line of the first link. Furthermore, the first link has a structure in which two members arranged in parallel are coupled and integrated with each other and a space through which the toggle driving link passes is formed between the two coupled members. | 11-15-2012 |
20130259972 | MOLD CLAMPING MECHANISM FOR INJECTION MOLDING MACHINE - In a mold clamping mechanism for an injection molding machine, a mold platen stiffness adjusting plate is attached to a mold platen (a movable platen, a fixed platen) at the mold attachment surface thereof. The mold platen stiffness adjusting plate is provided, at the mold attachment surface thereof, with elements for mold attachment that have the same shapes and are arranged on the same places as those provided on the mold platen at the mold attachment surface thereof. Accordingly, the same mold can be attached to the mold platen stiffness adjusting plate attached to the mold platen, and can also be attached to the mold platen from which the mold platen stiffness adjusting plate is detached. | 10-03-2013 |
20140120193 | INJECTION MOLDING MACHINE HAVING TIE-BAR BALANCE ADJUSTMENT FUNCTION - An injection molding machine has a die-height adjustment system. External screws formed individually on four tie-bars and die-height adjusting nuts threadedly engaged therewith are configured to be rotated independently with one another. In processes prior to mold clamping, the die-height adjusting nuts are rotated so that movable and stationary platen surfaces maintain a desired parallelism. During mold clamping, the die-height adjusting nuts are rotated so that clamping forces produced by the tie-bars are in a desired balance. | 05-01-2014 |
Patent application number | Description | Published |
20100232091 | SOLID ELECTROLYTIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME - Provided are a solid electrolytic capacitor capable of reducing leakage current and a method of manufacturing the same. An aspect of the invention provides a solid electrolytic capacitor that comprises: an anode including any one of niobium and a niobium alloy; a dielectric layer formed on the anode; a cathode layer formed on the dielectric layer, the cathode layer having a work function of 5 eV or larger; and a cathode lead layer formed on the cathode layer. | 09-16-2010 |
20100254071 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor includes an anode | 10-07-2010 |
20100302711 | SOLID ELECTROLYTIC CAPACITOR, ELECTRONIC DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A solid electrolytic capacitor, an electronic device using the same, and a method for manufacturing the same are disclosed. An aspect of the invention provides a solid electrolytic capacitor including: an anode including any one of niobium or a niobium alloy; a dielectric layer formed on the anode, wherein the dielectric layer contains niobium oxide; and a cathode layer formed on the dielectric layer, wherein the cathode layer contains copper. | 12-02-2010 |
20110205690 | SOLID ELECTROLYTE CAPACITOR - An aspect of the invention provides a solid electrolyte capacitor that comprises: an anode body; a dielectric layer formed on the surface of the anode body; a first polymer film formed on the dielectric layer and containing a first polymer; a second polymer film formed on the first polymer film and containing a second polymer that is different from the first polymer; a conducting polymer layer formed on the second polymer film and containing a conducting polymer that is different from the second polymer; and a cathode layer formed on the conducting polymer layer, wherein the first polymer film has a larger work function than that of the conducting polymer layer. | 08-25-2011 |
20110205691 | SOLID ELECTROLYTIC CAPACITOR AND A METHOD FOR MANUFACTURING THE SAME - An aspect of the invention provides a solid electrolytic capacitor having an anode body, a dielectric layer formed on the anode body, and a conductive polymer layer formed on the dielectric layer, wherein the anode body including a porous body has a first surface and a second surface facing each other, and a through-hole from the first surface to the second surface, wherein the through-hole has a first outer circumference at the first surface and a second outer circumference at a cross-section that is parallel to the first surface, and the position of the second outer circumference viewed from a normal direction to the first surface differs from the position of the first outer circumference. | 08-25-2011 |
20120218682 | SOLID ELECTROLYTIC CAPACITOR AND MANUFACTURING METHOD THEREOF - A solid electrolytic capacitor including an anode, a dielectric layer formed on the anode, a polyvinyl alcohol film formed on the dielectric layer, and a conductive polymer layer formed on the polyvinyl alcohol film, wherein the polyvinyl alcohol film has a cross-linked structure. | 08-30-2012 |
Patent application number | Description | Published |
20090010080 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells. | 01-08-2009 |
20090016142 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells. | 01-15-2009 |
20100302879 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells. | 12-02-2010 |
Patent application number | Description | Published |
20080263961 | SAFETY DOOR DEVICE OF INJECTION MOLDING MACHINE - A safer safety door, provided at low cost and imposing little burden on an operator. A primary safety door with a top and a secondary safety door are provided on a clamping unit. The primary safety door and the secondary safety door abut each other at abutting portions provided on each safety door. The secondary safety door has an engaging member that swings along a guide member. The engaging member has a hinge bent in one direction. When both safety doors are closed, the primary safety door can be freely opened and closed independently. When the secondary safety door is opened, both safety doors are linked together and move as a single body. In the state where the primary and secondary safety doors are opened separately, when the primary safety door is moved to be closed, the hinge member bends and both safety doors are linked together as a unit. | 10-30-2008 |
20090011073 | STATIONARY PLATEN OF INJECTION MOLDING MACHINE - A stationary platen of an injection molding machine is composed of a mold mounting plate, a tie-bar connecting member, and a mold clamping force transmission plate. The mold mounting plate is formed of a planar portion for mold fixing and a cylindrical connecting portion that extends from the planar portion and passes through a central through hole of the tie-bar connecting member. The mold clamping force transmission plate connects the cylindrical connecting portion of the mold mounting plate and the tie-bar connecting member with a predetermined gap therebetween lest the connecting member and the mounting plate come into contact and interfere with each other. | 01-08-2009 |
20110159132 | AUTOMATIC GREASE SUPPLY DEVICE OF INJECTION MOLDING MACHINE - A lubricant such as grease is supplied by a grease supply device to a grease supply point of an injection molding machine. A workload of a movable portion forming the injection molding machine when the movable portion operates is calculated and a grease supply command is output to the grease supply device when the calculated workload exceeds a reference value. An operating state of the injection molding machine is evaluated by using the workload reflecting a load on the movable portion and, in this way, insufficiency of lubrication of the movable portion is anticipated. | 06-30-2011 |
20110177187 | INJECTION MOLDING MACHINE PROVIDED WITH POWER TRANSMISSION MECHANISM - An injection molding machine is provided with a power transmission mechanism including a plurality of drive units configured to convert a rotary motion into a linear motion and a motor configured to drive the drive units. Strain sensors are affixed individually to respective supporting members for the drive units. An abnormality signal indicative of the occurrence of an abnormality in the power transmission mechanism is output if the absolute value of the difference between a strain value read by one of the strain sensors and a strain value read by another strain sensor is greater than a previously set value. | 07-21-2011 |
Patent application number | Description | Published |
20120120739 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells. | 05-17-2012 |
20130315012 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 11-28-2013 |
20130315020 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 11-28-2013 |
20130318293 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 11-28-2013 |
20130322198 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 12-05-2013 |
20130326246 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 12-05-2013 |
20130326247 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 12-05-2013 |
20130326248 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 12-05-2013 |
20130332761 | SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device. | 12-12-2013 |