Patent application number | Description | Published |
20090009101 | Oled Having Stacked Organic Light-Emitting Units - The present invention provides a stacked organic light emitting device, comprising a first conductive layer, at least one intermediate conductive layer and a second conductive layer, and light emitting units disposed between the conductive layers, wherein at least two non-neighboring conductive layers among the conductive layers are conductive layers belonging to Group 1 such that they are electrically connected with each other to a common potential; at least one non-neighboring conductive layer among the conductive layers which are not electrically connected with the conductive layers belonging to Group 1 to a common potential are conductive layers belonging to Group 2 such that they are electrically connected with each other to a common potential; and the conductive layers belonging to Group 1 and the conductive layers belonging to Group 2 are connected with each other via a voltage regulator for alternately applying a positive voltage and a negative voltage. | 01-08-2009 |
20090021159 | Organic Light Emitting Device Using Inorganic Insulating Layer as an Electron Injecting Layer and Method for Preparing the Same - The present invention provides an organic light emitting device, wherein an electron injecting electrode, at least one organic material layer including a light emitting layer, and a hole injecting electrode are laminated; and an inorganic insulating layer formed from the materials having a band gap of 3.3 eV or more, and a band offset of 0.45 eV or less, is provided between the electron injecting electrode and the organic material layer; and a method for preparing the same. | 01-22-2009 |
20090108254 | Fabrication Method for Organic Electronic Device and Organic Electronic Device Fabricated by the Same Method - The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method. | 04-30-2009 |
20090167163 | Fabrication Method For Organic Light Emitting Device And Organic Light Emitting Device Fabricated By The Same Method - Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer. | 07-02-2009 |
20090184628 | Oled and Fabricating Method of the Same - The present invention provides an organic light emitting device comprising: a substrate; a first conductive layer and a second conductive layer, which are sequentially positioned on the substrate; and at least one organic material layer, including a light emitting layer, which is interposed between the first conductive layer and the second conductive layer; wherein the organic light emitting device comprises a pattern layer formed corresponding to the light emitting region between at least one organic material layer and at least one conductive layer of the first conductive layer and the second conductive layer; charges are injected or transported between the conductive layer and the organic material layer through the pattern layer; and charges are not directly injected or transported in the region in which two layers each in contact with the upper surface and the lower surface of the pattern layer are directly in contact, and a method for preparation thereof. | 07-23-2009 |
20100090215 | THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME - The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same. | 04-15-2010 |
20100117085 | THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME - The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide (ZnO series) electrode having one or more of Si, Mo, and W as a source electrode and a drain electrode, and a method of manufacturing the same. | 05-13-2010 |
20100176378 | Fabrication Method for Organic Light Emitting Device and Organic Light Emitting Device Fabricated by the Same Method - The present invention relates to a method for producing an organic light emitting device, comprising a step of sequentially forming on a substrate a first electrode formed of a metal, one or more organic material layers including a light emitting layer, and a second electrode, which comprises a step of forming a layer on the first electrode using a metal having the higher oxidation rate than the first electrode before forming the organic material layer, and to an organic light emitting device produced by the same. | 07-15-2010 |
20110043102 | ORGANIC LUMINESCENT DEVICE AND A PRODUCTION METHOD FOR THE SAME - The present invention provides an organic light emitting device that comprises a substrate, a first electrode, two or more organic material layers, and a second electrode sequentially layered, wherein the organic material layers include a light emitting layer, and among the organic material layers, the organic material layer that is contacted with the second electrode includes metal oxide, and a method for manufacturing the same. | 02-24-2011 |
20110180792 | ORGANIC LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present invention provides an organic light emitting diode comprising a substrate; a transparent cathode; an anode; and an organic material layer interposed between the transparent cathode and the anode, wherein the organic material layer comprises a light emitting layer and an n-type doped electron transport layer, the n-type doped electron transport layer includes an electron transport material and an n-type dopant and is disposed between the transparent cathode and the light emitting layer, and a method for manufacturing the same. | 07-28-2011 |
20120280222 | FABRICATION METHOD FOR ORGANIC ELECTRONIC DEVICE AND ORGANIC ELECTRONIC DEVICE FABRICATED BY THE SAME METHOD - The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method. | 11-08-2012 |
20120319103 | THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME - The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same. | 12-20-2012 |