Patent application number | Description | Published |
20080197377 | PHOTONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A photonic semiconductor device which includes a semiconductor layer having a ridge-form protruding part formed on a semiconductor substrate. A resin layer is formed on surface parts on both sides of the protruding part so that the protruding part is embedded, and a first insulating film includes an opening that is formed on the resin layer which exposes an upper surface of the protruding part and a portion of a upper surface of the resin layer on both sides of the protruding part. A first electrode is formed in the opening so as to cover the upper surface of the protruding part, and electrically couple to an upper part of the protruding part; and a second electrode, which electrically couples to the first electrode, is formed on the first electrode and the first insulation film. | 08-21-2008 |
20080211044 | Micro-electro-mechanical systems device - According to an aspect of an embodiment, a micro-electro-mechanical systems (MEMS) device comprises a substrate, a MEMS and a movable absorber. | 09-04-2008 |
20080232417 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 09-25-2008 |
20080239441 | MIRROR DEVICE AND OPTICAL APPARATUS - The present mirror device for suppressing PDL on the assumption of multiple modes of angles of input light and output light to movable mirrors with respect to the crystal axis of a crystal member at the time light passes through the crystal member. The mirror device includes a mirror system | 10-02-2008 |
20080239444 | Wavelength selective switch - A wavelength selective switch for suppressing degradation of pass band characteristics when the temperature rises. The wavelength selective switch includes a spectroscopic element for separating input light and providing angular dispersion depending on wavelengths, a collective lens for gathering light output from the spectroscopic element, and a movable reflection block which includes a plurality of mirrors arranged in the direction of angular dispersion made by the spectroscopic element, changes the angles of the mirrors in a direction differing from the direction of angular dispersion, and reflects the light coming from the collective lens. The collective lens is fixed at one end with respect to the direction of angular dispersion, expands with heat in a direction in which it is not fixed when the temperature rises, and outputs the light in a direction opposite to the direction in which the angle of light output from the spectroscopic element changes. | 10-02-2008 |
20080240191 | SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×10 | 10-02-2008 |
20080291952 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device with a semiconductor laser formed over a semiconductor substrate, and a modulator formed over the semiconductor substrate and continuously arranged with the semiconductor laser, wherein the semiconductor laser includes a first region having a diffraction grating with a phase shift, a second region arranged between the first region and the modulator, and in which the diffraction grating is not formed, and a common active layer formed over the first region and the second region, a first electrode injecting a current into the common active layer. | 11-27-2008 |
20080315182 | Optical semiconductor device and method for manufacturing the same - There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide layer which is formed on the lower cladding layer and is composed of AlGaInAs, an active layer which is formed on the lower optical guide layer and has a multiple quantum well structure where a well layer and a barrier layer that is formed of AlGaInAs are alternately stacked, an upper optical guide layer which is formed on the active layer and is composed of InGaAsP, and an upper cladding layer formed on the upper optical guide layer. | 12-25-2008 |
20080317405 | Optical switch and MEMS package - An optical switch switches ports through which a beam is input and output and includes an optical system through which the beam passes; a movable reflector that is enclosed in a casing and reflects, at a variable angle, the beam that has passed through the optical system; and a transmissive window that is disposed in the casing at a position through which the beam passes, is made of a uniaxial crystal, and obtains a phase difference with respect to the beam passing therethrough having a wavelength λ. The phase difference is λ | 12-25-2008 |
20090052487 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other. | 02-26-2009 |
20090060416 | Wavelength selective switch - A wavelength selective switch of the present invention angularly disperses lights output from a plurality of input ports of an input and output optical system, to an X-direction, according to wavelength, by a diffraction grating to supply the dispersed lights to a condenser lens. The condenser lens is arranged so that a center axis thereof is shifted to the X-direction relative to an axis passing through the center of spreading angle to the X-direction of output beams from the diffraction grating, and accordingly, at a non-operating time, the light of each wavelength passed through the condenser lens is incident on each movable mirror being tilted by an offset angle corresponding to a shift amount of the condenser lens. As a result, it becomes possible to block the connection between an input side and an output side at the non-operating time without degrading the performance at an operating time. | 03-05-2009 |
20090086785 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer. | 04-02-2009 |
20090135488 | OPTICAL DEVICE AND WAVELENGTH SELECTIVE SWITCH - An optical device and a wavelength selector switch are provided. The optical device includes a diffraction grating having first and second planes and first and second reflecting planes located on a first plane side of the diffraction grating. In the optical device, light input to the second plane of the diffraction grating is diffracted, and then an optical path of the diffracted light is re-input to the first plane of the diffraction grating newly via the first and the second reflecting planes. | 05-28-2009 |
20090220242 | OPTICAL ADDING AND DROPPING DEVICE AND OPTICAL TRANSMISSION APPARATUS - An optical adding and dropping device includes a drop section including an input port and having a through port and a plurality of drop ports set as output ports, a first multiplexer adapted to multiplex light from the through port and light from a plurality of add ports, and a spectrum foot removing section provided on the input side of the first multiplexer and adapted to remove a foot of a spectrum of light to be inputted from the add ports to the first multiplexer. The optical adding and dropping device can be configured at a low cost while it has adding and dropping functions. | 09-03-2009 |
20090250591 | System, device, and method for optical wavefront control - An optical wavefront control system by which the number of optical components or costs can be reduced. If an optical wavefront control system comprising an optical wavefront control section for controlling, in accordance with a wavefront control signal for controlling a phase of a wavefront of input light inputted and an aberration control signal for controlling an aberration of the input light inputted, the phase and the aberration and for outputting output light, a detection section for detecting optical information regarding a wavefront and an aberration of the output light inputted from the optical wavefront control section, and a control circuit section for outputting the wavefront control signal and the aberration control signal to the optical wavefront control section on the basis of the optical information detected by the detection section is used, the wavefront of the input light can be controlled and the aberration can be corrected. Accordingly, there is no need to locate another optical component for correcting the aberration. | 10-08-2009 |
20090263926 | Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method - An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer. | 10-22-2009 |
20090290223 | OPTICAL APPARATUS AND OPTICAL TRANSMISSION APPARATUS - An optical apparatus includes a collimation optical member for collimating and outputting input light, a condensing optical member for condensing light from the collimation optical member and a light blocking mask member provided at a place on an optical path of the input light for light blocking part of the input light, and enhances the degree of freedom in design of an optical system. | 11-26-2009 |
20090323167 | Optical attenuator - An optical attenuator includes a first reflection portion reflecting a light incoming from an optical input portion in a direction different from incoming axis, a second reflection portion reflecting the light from the first reflection portion, an optical output portion outputting the light that is reflected by the first reflection portion after being reflected by the second reflection portion, and an optical-intensity-attenuation filter that is arranged on an optical path between the first reflection portion and the second reflection portion, optical transmittance being shifted in stages according to a position thereof. The first reflection portion is capable of turning to shift an incoming position at the optical-intensity-attenuation filter. | 12-31-2009 |
20100001048 | SOLDERING METHOD, ELECTRONIC PART, AND PART-EXCHANGING METHOD - A soldering method for soldering an electronic part on a substrate by reflow soldering is disclosed that includes the steps of applying a solder paste on the substrate; mounting the electronic part on the substrate by using the solder paste; disposing a heat capacity enhancing member on the electronic part, the heat capacity enhancing member including a gel-like material able to enhance the heat capacity of the electronic part; and soldering the electronic part onto the substrate by reflow soldering with the heat capacity enhancing member being applied thereon. | 01-07-2010 |
20100021167 | Wavelength selecting switch - In a wavelength selecting switch, light output from an input port of an input/output optical system is angularly dispersed according to a wavelength thereof, with a spectral element. Then the lights of respective wavelengths are collected by a light collecting optical system and reflected with a corresponding reflecting mirror of a mirror section. The reflected light corresponding to the angle of the reflecting mirror, is input to an output port at an output destination of the input/output optical system. The respective output ports of the input/output optical system each have a lens coupled to an end face of an optical fiber, and the lens has a structure where a focal length of a first region corresponding to inside a variable range of attenuation is different from a focal length of a second region corresponding to outside the variable range. As a result, a change in intensity of output light (coupling efficiency) at the time of an angle change of the reflecting mirror, and cross talk to an adjacent port can be reduced simultaneously. | 01-28-2010 |
20100033796 | Optical module, optical control method by optical module, optical switch, and optical switching method - An optical module includes a mirror which reflects input light and which outputs output light; and a mirror control section which is opposite to the mirror and which controls, at the time of the input light being reflected from a reflecting surface of the mirror, the reflecting surface by distorting the reflecting surface according to voltage applied to the mirror so as to output the output light an optical coupling characteristic of which changes. By using this optical module, the optical coupling characteristic of the output light changes. | 02-11-2010 |
20100085630 | DEMODULATOR - A demodulator and method are provided. The demodulator for demodulating an optical signal, includes a splitter that splits a differential phase modulation signal into a first split light component and a second split light component, couples the first split light component to a first optical path and the second split light component to a second optical path, a first medium disposed on the first optical path, a second medium disposed on the second optical path and having a refractive index different from that of the first medium, and a combiner that combines the first split light component that has passed through the first medium and the second split light component that has passed through the second medium, wherein one of the first split light component and the second split light component is delayed in relation to the other. | 04-08-2010 |
20100215363 | Optical transmitter - In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser. | 08-26-2010 |
20100221002 | Optical signal processing apparatus - An OADM in a wavelength division multiplexing transmission system includes a wavelength selection switch that selects a predetermined wavelength from a multiple optical signal obtained by multiplexing a phase modulated signal and an intensity modulated signal and outputs the selected wavelength signal to a predetermined output port. The wavelength selection switch has a different delay for each wavelength of the multiple optical signal. For example, the wavelength selection switch includes a mirror array. Optical paths from the surfaces of mirrors arranged on the mirror array to the diffraction grating are different in the case of adjacent mirrors. | 09-02-2010 |
20100245837 | POLARIZATION INTERFEROMETER, OPTICAL MODULE, AND OPTICAL RECEIVER - A interferometer includes a first splitter for splitting one of a signal and a reference lights into a first and a second branch lights; a second splitter for splitting the other of a signal and a reference lights into a third and a fourth branch lights; a first coupler for causing the first and the third branch lights to interfere with each other, and outputting a first detection light; a second coupler for causing the second and the fourth branch light to interfere with each other, and outputting a second detection light; a first polarization phase controller provided between the first beam splitter and the first coupler, and outputting the phase-controlled polarization components of the first branch light; and a second polarization phase controller provided between the second beam splitter and the second coupler, and outputting the phase-controlled polarization components of the fourth branch light. | 09-30-2010 |
20100284059 | DEMODULATOR - A demodulator includes a splitter, a first dielectric substance, and a combiner. The splitter splits a differential phase shift keying optical signal into a first light beam and a second light beam and outputs the first light beam to a first optical path and the second light beam to a second optical path. The first dielectric substance is disposed in the first optical path and has a refractive index higher than the average refractive index of the second optical path. The combiner combines the first light beam and the second light beam and causes the beams to interfere with each other. The difference in length between the first and second optical paths and the refractive index of the first dielectric substance are set such that the first light beam is delayed by one bit with respect to the second light beam. | 11-11-2010 |
20100322557 | OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided. | 12-23-2010 |
20100327257 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side. | 12-30-2010 |
20110006282 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, OPTICAL MODULE, TRANSMITTER, AND OPTICAL COMMUNICATION SYSTEM - A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs. | 01-13-2011 |
20110027926 | Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method - An active layer ( | 02-03-2011 |
20110081070 | Process and Apparatus for Image Processing and Computer-readable Medium Storing Image Processing Program - In an apparatus for image processing realized by a computer executing an image processing program: an image generation unit generates, for a radiographic image of a structure constituted by a plurality of members being stacked and including an object to be examined, a density-correction image representing an influence of a transmission density of each of the plurality of members other than the object to be examined, on the basis of structure information on the plurality of members; and a removal unit removes the influence of the transmission density of each of the plurality of members other than the object to be examined, from at least a part of the radiographic image in which images of the plurality of members overlap, by using the density-correction image generated by the image generation unit. | 04-07-2011 |
20110240719 | METHOD OF REMOVING PART HAVING ELECTRODE ON THE BOTTOM - In the initial state, a part having a bottom electrode such as a BGA is attached to a substrate. A heat transfer material such as low melting point solder is allowed to fill a gap between the substrate and the part having the bottom electrode, and the heat transfer material and the BGA serving as the bottom electrode are heated. The heat transfer material and the BGA are melted by the heating so that the part having the bottom electrode is removed from the substrate. | 10-06-2011 |
20120024512 | HEAT SINK DEVICE AND METHOD OF REPAIRING SEMICONDUCTOR DEVICE - A method of repairing a semiconductor device includes turning a press member to apply pressure on an electronic component which is mounted on a substrate. A heat sink which is provided on the electronic component via a bonding layer is thus displaced with respect to the electronic component in a transverse direction. The heat sink is removed from the electronic component by shearing the bonding layer with the press member. | 02-02-2012 |
20120070156 | SEMICONDUCTOR OPTICAL AMPLIFIER - A semiconductor optical amplifier includes an n-type semiconductor layer, a p-type semiconductor layer an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, the active layer transmitting an optical signal and a current-injection part that injects current into the active layer via the n-type semiconductor layer and the p-type semiconductor layer, the active layer including a first active layer that includes AlGaInAs, and a second active layer that includes GaInAsP, the second active layer provided closer to an output side than the first active layer, and the first active layer and the second active layer being butt-jointed. | 03-22-2012 |
20120083058 | Optical semiconductor device and method for manufacturing the same - There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide layer which is formed on the lower cladding layer and is composed of AlGaInAs, an active layer which is formed on the lower optical guide layer and has a multiple quantum well structure where a well layer and a barrier layer that is formed of AlGaInAs are alternately stacked, an upper optical guide layer which is formed on the active layer and is composed of InGaAsP, and an upper cladding layer formed on the upper optical guide layer. | 04-05-2012 |
20120083151 | METHOD OF DETACHMENT OF CONNECTOR, CONNECTOR DETACHMENT TOOL, AND CONNECTOR - A method of detachment of a connector which is provided with a housing having connector pins to be inserted into a board and with a first member which is arranged between the housing and the board and through which the connector pins are inserted, the method including a process of pulling out the connector pins from the board. This process utilizes the lever principle, which uses the first member as a fulcrum and which uses any point on the housing as a point of action, so as to pull out the connector pins from the board. | 04-05-2012 |
20130213705 | METHOD OF FABRICATING PRINTED-WIRING BOARD, AND PRINTED-WIRING BOARD - A method of fabricating a printed-wiring board, includes: forming a through-hole across a thickness of a printed-wiring board, the forming of the through-hole including forming a first opening part having a first diameter, forming a second opening part having a second diameter, and forming a third opening part provided between the first opening part and the second opening part, wherein the second diameter is larger than the first diameter, and the third opening part is formed in a tapered shape whose diameter decreases toward the first opening part from the second opening part. | 08-22-2013 |
20130243440 | OPTICAL TRANSMISSION SYSTEM AND CONTROL SIGNAL TRANSMISSION METHOD - An optical transmission system includes at least a first optical link to transmit a first data signal as a part of a multi-lane signal and a second optical link to transmit a second data signal as another part of the multi-lane signal; on the transmission side, a reference clock is constantly applied to the first data signal of the first optical link, and a delay clock is applied to the second data signal responsive to a control signal on the second optical link; on the receiving side, the phase of a first clock signal detected from the first data signal received on the first optical link and the phase of a second clock signal detected from the second data signal received on the second optical link are compared, and the control signal is detected from the comparison result. | 09-19-2013 |
20130267052 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer. | 10-10-2013 |
20130267054 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 10-10-2013 |
20140017841 | OPTICAL SEMICONDUCTOR DEVICE HAVING RIDGE STRUCTURE FORMED ON ACTIVE LAYER CONTAINING P-TYPE REGION AND ITS MANUFACTURE METHOD - A p-type cladding layer ( | 01-16-2014 |