Patent application number | Description | Published |
20090325331 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain. | 12-31-2009 |
20100055853 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain. | 03-04-2010 |
20120086011 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern layer formed on the substrate. The insulating patterns are isolated from each other by the first conductive pattern layer. The metal-line region includes an insulating multilayer formed on the substrate and a conductive pattern layer formed on the insulating multilayer. Several isolated zones are formed by the conductive pattern layer on the surface of the insulating multilayer. | 04-12-2012 |
Patent application number | Description | Published |
20080213951 | Method of fabricating pixel structure - A method of fabricating a pixel structure including the following procedures is provided. First, a substrate having an active device thereon is provided. A patterned passivation layer is formed on the substrate and the active device, and the patterned passivation layer exposes a portion of the active device. Then, a conductive layer is formed over the patterned passivation layer, and the conductive layer is electrically connected to the active device. A mask exposing a portion of the conductive layer is provided above the conductive layer. A laser is used to irradiate the conductive layer via the mask to remove the portion of the conductive layer exposed by the mask. As a result, the remained portion of the conductive layer constitutes a pixel electrode, and the pixel electrode is electrically connected to the active device. The method simplifies the fabrication process of a pixel structure, and thus reduces the fabrication cost. | 09-04-2008 |
20090053844 | METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure is provided. A substrate having a gate thereon is provided. Next, a gate dielectric layer is formed to cover the gate. A channel layer is formed on the gate dielectric layer above the gate. A source and a drain are formed on the channel layer at two sides of the gate, wherein the gate, the channel layer, the source and the drain constitute a thin film transistor (TFT). A passivation layer is formed on the gate dielectric layer and the TFT. A first shadow mask exposing parts of the passivation layer is provided thereabove. The drain is exposed by a laser applied via the first shadow mask to partially remove the passivation layer. A conductive layer is formed to cover the passivation layer and the drain. The conductive layer is then automatically patterned by the patterned passivation layer to form a pixel electrode. | 02-26-2009 |
20090053861 | METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure is provided. A substrate is provided, and a gate is formed on the substrate. A gate dielectric layer covering the gate is formed on the substrate. A semiconductor layer is formed on the gate dielectric layer. A first shadow mask exposing parts of the semiconductor layer is provided above the semiconductor layer. A laser is irradiated on the semiconductor layer through the first shadow mask to remove parts of semiconductor layer and form a channel layer. A source and a drain are respectively formed on the channel layer at both sides of the gate. A patterned passivation layer which covers the channel layer and exposes the drain is formed. A conductive layer is formed to cover the patterned passivation layer and the drain. The conductive layer is automatically patterned by the patterned passivation layer to form a pixel electrode. | 02-26-2009 |
20090068777 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure is provided. First, a substrate with a gate formed thereon is provided. Next, a gate dielectric layer covering the gate is formed on the substrate. Then, a channel layer, a source and a drain are formed on the gate dielectric layer over the gate. The source and the drain are disposed on a portion of the channel layer. The gate, the channel layer, the source and the drain constitute a thin film transistor. Then, a passivation layer is formed on the gate dielectric layer and the thin film transistor. After that, a laser beam is utilized to irradiate the passivation layer via a first shadow mask so as to remove a portion of the passivation layer for exposing the drain. Then, a pixel electrode is formed on the gate dielectric layer and connected to the exposed drain. | 03-12-2009 |
20090087954 | METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost. | 04-02-2009 |
20090104722 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed. | 04-23-2009 |
20090148972 | METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed. | 06-11-2009 |
20090148987 | METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain. | 06-11-2009 |
Patent application number | Description | Published |
20110155234 | METHOD OF FORMING THIN FILM SOLAR CELL AND STRUCTURE THEREOF - A method of forming thin film solar cell includes the following steps. A substrate is provided, and a plurality of first electrodes are formed on the substrate. A printing process is performed to print a light-absorbing material on the substrate and the first electrodes to form a plurality of light-absorbing patterns. Each of the light-absorbing patterns corresponds to two adjacent first electrodes, partially covers the two adjacent first electrodes, and partially exposes the two adjacent first electrodes. A plurality of second electrodes are formed on the light-absorbing patterns. | 06-30-2011 |
20130014801 | BACK CONTACT SOLAR MODULE AND ELECTRODE SOLDERING METHOD THEREFORAANM Chen; Yi-ChiaAACI Hsin-ChuAACO TWAAGP Chen; Yi-Chia Hsin-Chu TWAANM Liu; De-ChihAACI Hsin-ChuAACO TWAAGP Liu; De-Chih Hsin-Chu TWAANM Huang; Ming-YuanAACI Hsin-ChuAACO TWAAGP Huang; Ming-Yuan Hsin-Chu TWAANM Huang; Chiu-HuaAACI Hsin-ChuAACO TWAAGP Huang; Chiu-Hua Hsin-Chu TW - A back contact solar module and an electrode soldering method therefor are disclosed. The back contact solar module includes a substrate, two solar cells formed on the substrate, and a curved solder part. The curved solder part is soldered onto an electrode solder pad of each solar cell. The curved solder part has a curved portion between the two solder pads. The curved portion curves parallel to the substrate. Therefore, the invention utilizes the elasticity in structure or the allowable deformation of the curved portion to release the internal stress induced by the soldering on the electrode pads or by a following lamination packaging, which solves the problem in the prior art that the internal residual stress in an electrode solder part harmfully affects the electrical connection between solar cells. | 01-17-2013 |
20130174891 | PHOTOVOLTAIC ARRAY SYSTEM, PHOTOVOLTAIC DEVICE THEREOF, AND FRAME ELEMENT OF PHOTOVOLTAIC DEVICE THEREOF - The disclosure provides a photovoltaic array system, a photovoltaic device of the photovoltaic array system, and a frame element of the photovoltaic device of the photovoltaic array system. The frame element includes a groove, a receiving hole and a metal wire. The groove extends along a longitudinal axial direction of the frame element for holding one lateral side of a photovoltaic panel. The receiving hole extends along the longitudinal axial direction for receiving the metal wire therein, and is parallel to the longitudinal axial direction. | 07-11-2013 |
20130192658 | SOLAR PANEL MODULE - A solar panel module includes a solar panel, a supporting stand and a deflecting device. The supporting stand is structurally connected to the solar panel for supporting the solar panel. The solar panel is disposed inclinedly, and the solar panel has a tilt angle with respect to a horizontal plane. The deflecting device is disposed underneath the solar panel for deflecting wind blowing from lateral directions toward a wind exiting direction, which faces a bottom surface of the solar panel. | 08-01-2013 |
20130298969 | SOLAR MODULE - A solar module is provided and includes a support element, a frame body, a photoelectric conversion module, and a protection element. An accommodating space is formed in a region surrounded by the frame body. The photoelectric conversion module is located in the accommodating space. The support element extends past the photoelectric conversion module and is connected to the frame body. The protection element is located on the photoelectric conversion module, and is located in the accommodating space. | 11-14-2013 |