Patent application number | Description | Published |
20090008678 | SEMICONDUCTOR DEVICE - An electron supply layer ( | 01-08-2009 |
20090045438 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 02-19-2009 |
20090173968 | Field Effect Transistor - A semiconductor device | 07-09-2009 |
20090230429 | Field effect transistor - A field effect transistor ( | 09-17-2009 |
20090230430 | Field effect transistor - A field effect transistor includes a layer structure made of compound semiconductor ( | 09-17-2009 |
20090267114 | FIELD EFFECT TRANSISTOR - A field effect transistor | 10-29-2009 |
20090287053 | Medical operation device - A medical operation device is attachable to an insertion portion of a medical instrument for observation. The medical operation device includes: rotary cylinder rotatably disposed in device main body that has insertion portion inserting hole through which insertion portion is inserted; insertion portion pressing member that presses insertion portion inside rotary cylinder; insertion portion mounting section cover provided inside insertion portion inserting hole that prevents insertion portion directly touching inner face of insertion portion inserting hole, vicinity of opening of insertion portion inserting hole, and insertion portion pressing member; switching instruction portion that switches whether insertion portion pressing member presses insertion portion to specify state where rotary cylinder and insertion portion are united and state where insertion portion moves forward/rearward with respect to rotary cylinder; and rotation mechanism that, when rotary cylinder and insertion portion are united, rotates rotary cylinder to rotate insertion portion unified with rotary cylinder around insertion portion axis. | 11-19-2009 |
20090287055 | Electric bending operation device and medical treatment system including electric bending operation device - An electric bending operation device can be mounted to an insertion portion of a medical instrument for observation including an electric bending portion. The electric bending operation device includes: an insertion portion mounting mechanism; a rotation mechanism; an insertion portion operation section; and a support column. The insertion portion mounting mechanism includes a pressing portion that is provided integrally with a rotary cylinder through which the insertion portion is passed and presses and holds the insertion portion. Switching can be performed between a state where the pressing portion presses the insertion portion and the rotary cylinder is integral with the insertion portion and a state where the insertion portion is advanced or retracted with respect to the rotary cylinder. The rotation mechanism is provided in the insertion portion mounting mechanism. The rotation mechanism rotates the rotary cylinder to rotate the insertion portion around an axis thereof when the rotary cylinder is integral with the insertion portion. The insertion portion operation section includes a bending portion operation section and a twisting operation portion. The bending portion operation section performs bending operation of the electric bending portion provided in the insertion portion. The twisting operation portion rotates the rotary cylinder to rotate the insertion portion. The support column integrally connects the insertion portion operation section and the insertion portion mounting mechanism. | 11-19-2009 |
20100038680 | III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR - Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate ( | 02-18-2010 |
20100155779 | Field Effect Transistor - In a field effect transistor, a Group III nitride semiconductor layer structure containing a hetero junction, a source electrode | 06-24-2010 |
20100224910 | FIELD EFFECT TRANSISTOR - Disclosed is an HJFET | 09-09-2010 |
20100230684 | SEMICONDUCTOR DEVICE - A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (In | 09-16-2010 |
20100276732 | SEMICONDUCTOR DEVICE - A semiconductor device includes a lower barrier layer | 11-04-2010 |
20100327318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer ( | 12-30-2010 |
20110006345 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa | 01-13-2011 |
20110006346 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed Al | 01-13-2011 |
20110241075 | BIPOLAR TRANSISTOR - A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [ | 10-06-2011 |
20110260217 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region. | 10-27-2011 |
20110278586 | BIPOLAR TRANSISTOR - A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains In | 11-17-2011 |
20110284865 | HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETEROJUNCTION FIELD EFFECT TRANSISTOR, AND ELECTRONIC DEVICE - A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layer | 11-24-2011 |
20110291160 | FIELD EFFECT TRANSISTOR - A field effect transistor includes a nitride-based semiconductor multi-layer structure, a source electrode ( | 12-01-2011 |
20110297954 | SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved. | 12-08-2011 |
20120187800 | Electromechanical Conversion Element and Actuator - An electromechanical conversion element having high connection reliability and an actuator equipped with the electromechanical conversion element. The electromechanical conversion element includes: a displacement part capable of expanding and contracting by application of voltage and having electrode forming faces and an adhesion face which are disposed adjacent to each other; and external electrodes on the electrode forming faces, in which lead electrodes for applying voltage to the displacement part are bonded to bonding regions provided in the external electrodes, and a driven member capable of being driven by the expansion and contraction of the displacement part is bonded to the adhesion face by an adhesive. The electromechanical conversion element further includes bleed flow blocking parts on the electrode forming faces at points closer to the adhesion face than ends of the bonding regions located on the same side as the adhesion face. | 07-26-2012 |
20120217547 | FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT - Disclosed is an HJFET | 08-30-2012 |
20130047757 | BENDING APPARATUS - A bending apparatus includes: a bending portion; an operation element erected vertically from an operation portion having a longitudinal axis and has a shaft portion in which a tilt direction and tilt angle are changeable; a pulling member having one end connected to the bending portion; a pulley on which a rotary body around which the pulling member is wound is arranged; a motor that generates a driving force that rotates the pulley to pull the pulling member wound around the rotary body in a winding direction; a hanging frame that extends in a diameter direction of the shaft portion, and includes an attachment portion to which the other end of the pulling member is attached; and an attachment path setting member provided inside the operation portion, which changes a path of the pulling to the longitudinal axis direction and guides the pulling member to the attachment portion. | 02-28-2013 |
20130060088 | BENDING PORTION-EQUIPPED MEDICAL APPARATUS - A bending portion-equipped medical apparatus includes: a bending portion; a grasping portion having a long axis and including a sheath portion to be grasped by a finger other than a thumb of a grasping hand; an operation portion including the grasping portion; and an operation element for performing an operation to bend the bending portion, the operation element including a shaft portion including a distal end portion and a proximal end portion, the shaft portion being provided in a standing manner in the operation portion, a tilting direction and an tilting angle of the shaft portion being changeable, and a finger contact portion provided at the distal end portion and including inclined surfaces each inclined from the proximal end direction side of the shaft portion to the distal end direction side of the shaft portion along a tilting direction in which the tilting angle of the shaft portion increases. | 03-07-2013 |
20130079595 | MEDICAL OPERATION APPARATUS - A medical operation device is attachable to an insertion portion of a medical instrument for observation. The medical operation device includes: rotary cylinder rotatably disposed in device main body that has insertion portion inserting hole through which insertion portion is inserted; insertion portion pressing member that presses insertion portion inside rotary cylinder; insertion portion mounting section cover provided inside insertion portion inserting hole that prevents insertion portion directly touching inner face of insertion portion inserting hole, vicinity of opening of insertion portion inserting hole, and insertion portion pressing member; switching instruction portion that switches whether insertion portion pressing member presses insertion portion to specify state where rotary cylinder and insertion portion are united and state where insertion portion moves forward/rearward with respect to rotary cylinder; and rotation mechanism that, when rotary cylinder and insertion portion are united, rotates rotary cylinder to rotate insertion portion unified with rotary cylinder around insertion portion axis. | 03-28-2013 |
20130099245 | FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE - The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer | 04-25-2013 |
20130113028 | SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR - A semiconductor device comprises a substrate | 05-09-2013 |
20130267775 | ENDOSCOPE - An endoscope includes: an operation portion provided on a proximal end side of an insertion portion; one pair of pulling members extending from a bending portion; a pulley rotated by a motor; rotating bodies that are elastically deformable and arranged on the pulley; a suspension frame to which the pulling members are fixed; a manipulator provided to project from the operation portion, the manipulator being capable of applying an amount of force of pulling a part of a pulling member on the insertion portion side using a frictional resistance generated as a result of, upon a tilting operation being performed, the pulling member being pulled to reduce a diameter of the corresponding rotating body and the rotating body being thereby brought into contact with the pulley; and a force amount adjustment section capable of changing the amount of force of pulling by making an adjustment of a friction generation state. | 10-10-2013 |
20130331652 | INSERTION APPARATUS - An insertion portion, an operation portion, a pull wire, a joy stick, and a guide roller that is provided outside an action range of a frame body that acts by being linked with tilt of an operation element and a shaft in the operation portion, and changes a travel direction of the pull wire that is extended in a height direction Z from the frame body so that the pull wire travels outside the action range of the frame body to a front side in an insertion direction. | 12-12-2013 |
20130338441 | ENDOSCOPE - An endoscope includes an insertion portion, a bending portion bendable in an up-down direction and a left-right direction, a traction member for bending the bending portion, an operation portion provided at a proximal end of the insertion portion, an operation input portion provided in the operation portion, tiltable with respect to a first direction for bending the bending portion in the up-down direction and a second direction for bending the bending portion in the left-right direction, and for performing an operation input for acting on the traction member according to tilting operation and bending the bending portion, and an operation force amount adjusting portion configured to adjust an operation force amount for tilting the operation input portion in the first direction and an operation force amount for tilting the operation input portion in the second direction to be different. | 12-19-2013 |
20140121462 | ENDOSCOPE - The endoscope includes a drive section which bends and drives a bending portion, a C ring-shaped member which frictionally engages with a pulley and has a notch portion at a portion, an operation input member which performs bending operation, an operation input-side pulling member which is wound around the C ring-shaped member and extending toward the operation input member and is coupled to the operation input member such that a wrap distance, over which the operation input-side pulling member wraps around the C ring-shaped member across the notch portion, decreases with increase in the amount of operation of the operation input member, and a bending portion-side pulling member which is wound around the C ring-shaped member and extending toward the bending portion and is coupled to the bending portion so as not to wrap around the C ring-shaped member across the notch portion. | 05-01-2014 |
20140171741 | INSERTION APPARATUS - An insertion portion, a bending portion, a joystick, a pulling wire, a pulley, a C-shaped ring, and an end portion of a cutout portion that is provided at the C-shaped ring, and removes wear debris that is scraped from the pulley with contact of the C-shaped ring to the pulley from the pulley are provided. | 06-19-2014 |
20140180008 | ENDOSCOPE SYSTEM - An insertion portion, a function portion, an operation portion, a universal cord, a connection connector, a drive member that generates a drive force for causing the function portion to act, a connection portion that is provided at the connection connector and has the drive member connected thereto, and a drive force transmitting member that is inserted through the universal cord, and transmits the drive force generated by the drive member connected to the connection portion to the function portion are included. | 06-26-2014 |
20140190305 | INTRODUCING DEVICE SYSTEM - An introducing device system includes: an insertion portion; a bending portion which is provided at the insertion portion; an operation portion through which an input operation is performed for bending the bending portion; a pulling member connected to the bending portion and pulled in accordance with the operation through the operation portion; a detection section that detects a moving state of the pulling member; a driving unit that rotationally drives; a driving force transmitting unit including an inner circumferential surface configured to be able to contact an outer circumferential surface of the driving unit, and an outer circumference on which the pulling member is wound, the driving force transmitting unit being reduced in diameter in accordance with pulling of the pulling member; and a driving unit control section controls the driving unit when the moving state detected by the detection section is different from a state determined in advance. | 07-10-2014 |
20140298932 | ENDOSCOPE APPARATUS - An endoscope apparatus includes: an insertion portion; an insertion assisting mechanism portion that is provided on an outer circumference of the insertion portion and is rotatable in a first rotational direction, or a second rotational direction that is the opposite direction to the first rotational direction; a drive portion that generates a driving force for causing the insertion assisting mechanism portion to rotate; a drive shaft that can be rotated by a driving force of the drive portion, and with respect to which a torsional rigidity in a fourth rotational direction that is an opposite direction to a third rotational direction is set so as to be higher than a torsional rigidity in the third rotational direction; and a drive mechanism portion that, by means of the drive shaft rotating in the fourth rotational direction, causes the insertion assisting mechanism portion to rotate in the first rotational direction. | 10-09-2014 |
20140309625 | INSERTION DEVICE - An insertion apparatus according to an aspect of the present invention includes: an insertion portion to be inserted into a subject; a bending operation apparatus to be moved by an operator to input an operation instruction; a bending drive section that generates a drive force based on the movement of the bending operation apparatus; a pulling member to be pulled by the drive force from the bending drive section; a bending portion provided in the insertion portion, the bending portion being connected to the pulling member and being bent upon the pulling member being pulled; and a haptic section that connects the pulling member and the bending operation apparatus via an elastic portion. | 10-16-2014 |
20140367743 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 12-18-2014 |