Patent application number | Description | Published |
20080227230 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same - A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL. | 09-18-2008 |
20080309234 | ALTERNATING CURRENT DRIVING TYPE QUANTUM DOT ELECTROLUMINESCENT DEVICE - An alternating current driving type quantum dot electroluminescent device includes; a first electrode, a second electrode, a quantum dot light-emitting layer disposed between the first electrode and the second electrode, and at least one layer selected from the group consisting of a tunneling layer, a bipolar layer, a dielectric layer, an insulating layer, and a combination of layers thereof, disposed between at least one of the first electrode and the quantum dot light-emitting layer, and the second electrode and the quantum dot light-emitting layer. | 12-18-2008 |
20090008628 | LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE - Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity. | 01-08-2009 |
20090009057 | QUANTUM DOT OPTICAL DEVICE - Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an electron injection electrode, wherein a light-emitting surface of the device has a periodical projection structure. | 01-08-2009 |
20090045720 | Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires - Disclosed herein is a method for producing nanowires, which features the use of a porous glass template in combination with a solid-liquid-solid or vapor-liquid-solid process for growing nanowires which are highly straight and have nanoparticles precisely arranged therein. The nanowires can be grown into composite structures of superlattices and hybrids by modulating the composition of the materials provided thereto. Also disclosed is the use of the nanowires in multi-probes, field emission tips, and devices. | 02-19-2009 |
20090053126 | METHOD FOR MASS PRODUCTION OF NANOSTRUCTURES USING MESOPOROUS TEMPLATES AND NANOSTRUCTURES PRODUCED BY THE SAME - A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis. | 02-26-2009 |
20090057653 | METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES - Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires. | 03-05-2009 |
20090081429 | OPTICAL FILM HAVING GRADED REFRACTIVE INDEX AND METHOD OF MANUFACTURING THE SAME - Disclosed are an optical film having a graded refractive index and a method of manufacturing the same. The optical film includes one or more antireflection films composed of a mesoporous material having a plurality of pores of a uniform size, and the pores of the mesoporous material are filled with air or a filler having a refractive index different from that of the mesoporous material, and thus the volume ratio of mesoporous material to filler in the pores thereof is controlled, thereby obtaining a desired magnitude of effective refractive index and ensuring a refractive index distribution in which the refractive indexes sequentially change, resulting in high antireflection performance. The method of manufacturing the optical film may be conducted using a nanowire growing technique, thus making it easy to realize mass production. | 03-26-2009 |
20090152527 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-18-2009 |
20090197416 | SILICON NANO WIRE HAVING A SILICON-NITRIDE SHELL AND MTHOD OF MANUFACTURING THE SAME - Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell. | 08-06-2009 |
20100051583 | METHOD FOR PREPARING POROUS MATERIAL USING NANOSTRUCTURES AND POROUS MATERIAL PREPARED BY THE SAME - Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. | 03-04-2010 |
20100065809 | NANOWIRE COMPRISING SILICON RICH OXIDE AND METHOD FOR PRODUCING THE SAME - Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like. | 03-18-2010 |
20100084628 | BRANCHED NANOWIRE AND METHOD FOR FABRICATION OF THE SAME - Disclosed herein are a branched nanowire having parasitic nanowires grown at a surface of the branched nanowire, and a method for fabricating the same. The branched nanowire may be fabricated in a fractal form and seeds of the parasitic nanowires may be formed by thermal energy irradiation and/or a wet-etching process. The branched nanowire may effectively be used in a wide variety of applications such as, for example, sensors, photodetectors, light emitting elements, light receiving elements, and the like. | 04-08-2010 |
20100108984 | QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME - A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface. | 05-06-2010 |
20100109074 | Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same - A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions. | 05-06-2010 |
20100140584 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-10-2010 |
20100144126 | METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES - Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires. | 06-10-2010 |
20100193003 | THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire. | 08-05-2010 |
20100208493 | LIGHT GUIDE PLATE AND DISPLAY APPARATUS COMPRISING THE SAME - A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto. | 08-19-2010 |
20100213434 | METHOD OF SYNTHESIZING NANOWIRES - A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method. | 08-26-2010 |
20100213438 | QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER - A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer. | 08-26-2010 |
20100327258 | METHOD FOR PRODUCING CORE-SHELL NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANOWIRE DEVICE COMPRISING THE NANOWIRES - Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics. | 12-30-2010 |
20110204321 | METHOD FOR PRODUCING NANOWIRES USING A POROUS TEMPLATE - Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner. | 08-25-2011 |
20120214729 | COMPOSITION FOR PREVENTING OR TREATING INFLAMMATION - The present invention relates to a composition containing Substance P for preventing or treating an inflammation. The composition containing Substance P according to the present invention exhibits the effect of decreasing leukocytes, neutrophils and hematopoietic stem cells in a blood, which are associated with the inflammation, and of increasing anti-inflammatory cytokines, regulatory T-lymphocytes, anti-inflammatory macrophages and the like, thereby terminating inflammatory response at an early stage, and is thus highly effective in preventing and treating the inflammation caused by a non-traumatic, traumatic, infectious or ischemic retinal injury. | 08-23-2012 |