Patent application number | Description | Published |
20090141133 | SEMICONDUCTOR DEVICE WITH ANTI-SHAKE CONTROL FUNCTION - A semiconductor device with an anti-shake function includes a logic chip having a digital circuit which obtains a value for vibration of an apparatus based on a vibration detection signal supplied from a vibration detection element to generate a correction signal. The logic chip includes a correction signal processing unit which generates the correction signal, and a control signal output unit which outputs a vibration control signal in accordance with the correction signal to a vibration correction control unit which executes vibration correction control for an optical component in accordance with vibration. The correction signal processing unit includes a vibration computing unit which is capable of executing a plurality of stages of signal processing operations, by dedicated circuits, respectively, and which generates the correction signal from the vibration detection signal, and a central processing unit capable of executing desired computation processing to be performed by the vibration computing unit, and a signal obtained by executing all or a part of the computation processing to be performed by the dedicated circuits by the central processing unit is supplied as the correction signal to the control signal output unit. | 06-04-2009 |
20100124411 | Image stabilization control circuit and image-capturing device - An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (D | 05-20-2010 |
20100265341 | IMAGE STABILIZATION CIRCUIT - A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element. | 10-21-2010 |
Patent application number | Description | Published |
20090026440 | Nitride semiconductor light-emitting element - A nitride semiconductor light-emitting element | 01-29-2009 |
20090057646 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate | 03-05-2009 |
20090057688 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 03-05-2009 |
20100144078 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 06-10-2010 |
20100219395 | Optical Semiconductor Device and Method of Manufacturing the Same - Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor. | 09-02-2010 |
20120248456 | NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer. | 10-04-2012 |
20130069034 | LIGHT-EMITTING ELEMENT HAVING NITRIDE SEMICONDUCTOR MULTIQUANTUM BARRIER, AND PROCESS FOR PRODUCTION THEREOF | 03-21-2013 |
20140167066 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap. | 06-19-2014 |
20140209857 | METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step. | 07-31-2014 |
20150117485 | QUANTUM CASCADE LASER ELEMENT - To raise the upper limit of the temperature range in which a quantum cascade laser (QCL) element for THz range operates at a single frequency. In a quantum cascade laser element in one embodiment of the present invention, each unit structure | 04-30-2015 |
20150221502 | EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME - The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C. | 08-06-2015 |
20150311392 | ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS HAVING THE SAME - To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided. | 10-29-2015 |
20150372190 | ULTRAVIOLET LIGHT EMITTING DIODE AND METHOD FOR PRODUCING SAME - An ultraviolet LED having increased light extraction efficiency includes: a single crystal sapphire substrate on which an array of protruding portions are formed; an AlN crystal buffer layer formed on the sapphire substrate; and an ultraviolet light emitting layer, in contact with the buffer layer, formed into a layered stack including an n-type conductive layer, a recombination layer, and a p-type conductive layer, in order from the buffer layer. The buffer layer includes a pillar array section and an integration section wherein pillars in the array are connected with one another. Each pillar extends from a protruding portion of the sapphire substrate, in a direction normal to one surface thereof. The pillars are separated from one another in the plane of the surface by a gap G. Light emitted from the ultraviolet light emitting layer is extracted to the outside through the pillar array section and the sapphire substrate. | 12-24-2015 |
20160042102 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions. | 02-11-2016 |
Patent application number | Description | Published |
20100207136 | SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT - The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields. | 08-19-2010 |
20140153603 | QUANTUM CASCADE LASER ELEMENT - [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (J | 06-05-2014 |
Patent application number | Description | Published |
20090040320 | IMAGE STABILIZATION CONTROL CIRCUIT - An image stabilization control circuit controls an optical element driving element that moves an optical element provided in an imaging apparatus based on an output signal of a vibration detection element provided in the imaging apparatus. The image stabilization control circuit includes a high-pass filter that removes a low-frequency component from an output signal of the vibration detection element. A movement amount calculation circuit calculates a movement amount of the imaging apparatus based on an output signal of the high-pass filter. A servo circuit generates a correction signal for correcting the position of the optical element based on an output signal of the movement amount calculation circuit and outputs the correction signal to the optical element driving element. The movement amount calculation circuit includes a digital filter circuit and a register. The digital filter circuit performs filter processing based on a filter coefficient stored in the register. | 02-12-2009 |
20090153679 | IMAGE STABILIZATION CONTROL CIRCUIT FOR IMAGING APPARATUS - An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer. | 06-18-2009 |
20140207287 | ACTUATOR CONTROL APPARATUS - An actuator control apparatus includes an analog-digital conversion circuit, a servo circuit, a sampling circuit, and a driving circuit. The analog-digital conversion circuit is configured to sample a position detection signal with a first sampling period, convert the sampled signal into a digital signal, and output the digital signal, the position detection signal outputted from a position sensor corresponding to a position of a control target. The servo circuit is configured to calculate a displacement amount, by which the control target is to be displaced by an actuator, and output first servo control data corresponding to the calculated displacement amount, based on the position detection signal converted into the digital signal. The sampling circuit is configured to linearly interpolate the first servo control data, and output second servo control data sampled with a second sampling period shorter than the first sampling period. | 07-24-2014 |
Patent application number | Description | Published |
20110201142 | Method of Manufacturing a Light-Emitting Device - To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer. | 08-18-2011 |
20120025252 | COMPOSITE SUBSTRATE FOR FORMATION OF LIGHT-EMITTING DEVICE, LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided. A composite substrate for the formation of a light-emitting device, comprising a light-converting material substrate for radiating at least a part of incident light as light different in the wavelength through the surface opposite the incident surface, and at least two or more Al-containing nitride layers formed on the light-converting material substrate, wherein the light-converting material substrate has a texture comprising two or more oxide phases continuously and three-dimensionally entangled with each other, including an Al | 02-02-2012 |
20160064901 | NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER - A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. | 03-03-2016 |
Patent application number | Description | Published |
20110279692 | CONTROL CIRCUIT FOR IMAGE-CAPTURING DEVICE - Performing data processing more effectively for camera shake correction is desirable. Movement of an image-capturing device is compensated on the basis of displacement velocity of the image-capturing device detected by a displacement velocity detector and position regarding a focus adjustment member of the image-capturing device detected by a position detector. An input data format converter converts the displacement velocity detected at the displacement velocity detector from fixed-point format to floating-point format and converts the detected position of the focus member to floating-point data. Furthermore, a gyro filter uses data processing in floating-point format to calculate displacement data for a required amount the image-capturing device is to be displaced and a Hall filter uses data processing in floating-point format to generate drive data for the focus adjustment member. Then, the drive data in floating-point format from the Hall filter is converted to drive data in fixed-point format. | 11-17-2011 |
20110298410 | LOOP GAIN ADJUSTING CIRCUIT - In an adder circuit, a sine wave is added to a compensation signal which is generated based on a position detection signal of a member to be driven and for compensating a position of a lens which is the member to be driven. An absolute value integrating circuit integrates absolute values of signals before and after the adder circuit adds the sine wave. The two obtained integrated values are compared by a comparator circuit, and a gain adjusting circuit adjusts a gain of an amplifier which amplifies the compensation signal so that the two integrated values are equal to each other. | 12-08-2011 |
20110307537 | DIGITAL FILTER - A digital filter has a plurality of filters, wherein each filter performs coefficient multiplication and delay processing for an input signal and an output signal, obtains the output signal from the input signal, and includes a plurality of coefficient multipliers for multiplying a signal by a predetermined coefficient. The digital filter also includes a plurality of delay circuits for delaying a signal, and an adder for adding a plurality of signals. A first RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the first filter and stores delay data for the delay circuit of the second filter. A second RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the second filter and stores delay data for the delay circuit of the first filter. | 12-15-2011 |