Patent application number | Description | Published |
20100232179 | PRINTED CIRCUIT BOARD AND BACK LIGHT MODULE USING THE SAME - A back light module includes a printed circuit board and a plurality of surface mounting elements mounted on the printed circuit board. Each surface mounting element is an LED lighting element. The printed circuit board has a plurality of pads. Each of the pads includes a first bar and two second bars extending respectively from two ends of the first bar. The surface mounting element includes a plurality of pins. The pins are placed on two sides of the surface mounting element. The pins are soldered on the pads. | 09-16-2010 |
20110169034 | PACKAGE STRUCTURE OF PHOTOELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package structure includes a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and an opposite second surface. The first surface has a reflective opening, and the second surface has two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recess. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the second insulating layer. The second conductive layer is disposed on the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer. | 07-14-2011 |
20120081901 | ILLUMINATION DEVICE WITH LIGHT EMITTING DIODE - An illumination device includes an LED light source, a fluorescent board, and an intensity controller. The LED light source emits first wavelength light. The fluorescent board is located on the light path of the first wavelength light emitted from the LED light source. The fluorescent board absorbs a portion of the first wavelength light emitted from the LED light source and emits second wavelength light. The intensity controller is located on the light path of the light exiting from the fluorescent board, and decreases the intensity of the first wavelength light. | 04-05-2012 |
20120098000 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer. | 04-26-2012 |
20120098410 | LIGHT EMITTING ELEMENT PACKAGE WITH VARIABLE COLOR TEMPERATURE - A light emitting element package includes first and second light emitting elements, a phosphor film consisting of first and second phosphor elements and a sensing module. The sensing module is configured for modulating light intensity of the at least one second light emitting element. Light of a first color temperature is generated when light from the at least one first light emitting element passes through the first phosphor elements. Light of a second color temperature is generated when light of the at least one second light emitting element passes through the second phosphor elements. Light of a predetermined color temperature is generated by mixing the light of the first color temperature and the light of the second color temperature. | 04-26-2012 |
20120138959 | LIGHT EMITTING DIODE WITH A STABLE COLOR TEMPERATURE - A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED. | 06-07-2012 |
20120138962 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a number of light emitting diode chips, a number of color sensor modules, and a reflecting cup around the light emitting diode chips. Each light emitting diode chip has a main light emitting surface and a sub light emitting surface opposite to the main light emitting surface. Intensities of light from the light emitting diode chips are detected by the color sensor modules for adjusting color temperatures of the light from the light emitting diode chips. | 06-07-2012 |
20120138978 | LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode (LED) package includes a first chip group, a second chip group and an optical wavelength converting substance. The first chip group includes a plurality of red LED chips configured for emitting red light. The second chip group includes a plurality of blue LED chips configured for emitting blue light. The optical wavelength converting substance is arranged on light paths of the blue LED chips. The optical wavelength converting substance is configured for partly absorbing blue light emitted from the blue LED chips and emitting visible lights with different wavelengths. The plurality of blue LED chips has a total light output larger than that of the plurality of red LED chips. | 06-07-2012 |
20120146058 | LIGHT EMITTING DIODE MODULE PROVIDING STABLE COLOR TEMPERATURE - A light emitting diode module providing stable color temperature includes a plurality of light emitting diodes, at least one color sensor and a controller. The plurality of light emitting diodes can emit light with different wavelengths. The light emitting diode module providing stable color temperature includes a reflection region at the path of the light emitting from half peak angle of each light emitting diode. The color sensor detects the light having different wavelengths reflected from the reflection region. The controller adjusts driving currents of the light emitting diodes according to the luminous intensities of the light of the light emitting diodes reflected by the reflection region and detected by the color sensor. | 06-14-2012 |
20120146070 | LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer. | 06-14-2012 |
20120146071 | LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a light emitting structure and a connecting layer connecting the heat conducting layer with the light emitting structure. The heat conducting layer includes a plurality of spaced catalyst areas on the substrate and a plurality of carbon nanotube islands vertically grown from the catalyst areas. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer. | 06-14-2012 |
20120168793 | LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, an epitaxial structure comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer, a current conducting structure formed on a bottom side of the first semiconductor layer of the epitaxial structure, and heat conducting protrusions formed on a top side of the substrate. Each of the heat conducting protrusions includes a carbon nanotube layer vertically grown thereon. The heat conducting protrusions are embedded into the current conducting structure to thermally connect with the first semiconductor layer. A method for manufacturing the light emitting chip is also disclosed. | 07-05-2012 |
20120187443 | LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a buffer layer formed on the substrate and including a number of horizontally grown nitride nanostructures, a cap layer grows from a top of the nitride nanostructures, and a light emitting structure formed on the cap layer. The light emitting structure sequentially comprises a first semiconductor layer connected to the cap layer, a light emitting layer, and a second semiconductor layer. | 07-26-2012 |
20120190172 | METHOD FOR MAKING GALLIUM NITRIDE SUBSTRATE - A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon. | 07-26-2012 |
20120235114 | LIGHT EMITTING CHIP - A light emitting chip includes a substrate, a first reflective layer formed on the substrate, a lighting structure formed on the first reflective layer, and a first electrode formed between the first reflective layer and the substrate. The lighting structure includes a first semiconductor layer, an active layer and a second semiconductor layer. A receiving groove is defined in the lighting structure and extends from the first reflective layer to the first semiconductor layer. The receiving groove has a second reflective layer formed on an interior sidewall thereof. The first electrode includes a base and a connecting section extending upwardly from the base. The connecting section is surrounded by the second reflective layer and electrically connects with the first semiconductor layer. The first and second reflective layers each are electrically insulating. | 09-20-2012 |
20120235205 | LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer. | 09-20-2012 |
20120241724 | LIGHT EMITTING CHIP - A light emitting chip includes a substrate, a reflective layer, a light emitting structure and a first electrode having a base formed between the reflective layer and the substrate. The light emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The first electrode further includes a connecting section extending upwardly from the base. An electrically insulating ion region is defined in the light emitting structure and extends from an upper surface of the base to the first semiconductor layer. A receiving groove is defined in the ion region and extends upwardly from the upper surface of the base to the first semiconductor layer. The connecting section is positioned in the receiving groove and electrically connects with the first semiconductor layer. | 09-27-2012 |
20120327631 | LED LIGHTING DEVICE - An LED lighting device comprises an LED light source and a luminescent conversion portion. Rotation of the luminescent conversion portion relative to the LED light source or rotation of the LED light source relative to the luminescent conversion portion is used to produce a variety of color temperatures. The luminescent conversion portion has phosphors unevenly distributed therein. | 12-27-2012 |
20130026529 | LIGHT EMITTING CHIP PACKAGE AND METHOD FOR MAKING SAME - A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the insulation layer. The light emitting chip is arranged on the electric conductive layer. The encapsulation covers the light emitting chip and the electric conductive layer. The plurality of thermal conductors is formed at a bottom surface side of the substrate. The plurality of electrical conductors penetrates the insulation layer and connects the conductive layer with the thermal conductor. The plurality of electrical conductors is isolated from each other. | 01-31-2013 |
20130044472 | LIGHT-EMITTING DEVICE FOR BACKLIGHT SOURCE - A light-emitting device includes a substrate, a first light-emitting member and a second light-emitting member mounted on the substrate. The first light-emitting member emits first light having a first color temperature. The second light-emitting member emits second light having a second color temperature. The second color temperature is higher than the first color temperature. The first light mixes with the second light making the light-emitting device to produce a light having a wider range of color temperature. | 02-21-2013 |
20130062606 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a substrate with a recess formed therein, a channel region received in the recess, a gate insulating layer formed on the channel region, a gate electrode formed on the gate insulating layer, and a source region and a drain region connecting the channel region, respectively. The gate insulating layer and the gate electrode are positioned between the source region and the drain region. The channel region is made of a nitride compound semiconductor. A method of manufacturing the thin film transistor is also provided. | 03-14-2013 |
20130075717 | THIN FILM TRANSISTOR - A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region. | 03-28-2013 |
20130078760 | THIN FILM TRANSISTOR FABRICATING METHOD - A thin film transistor fabricating method is disclosed. The thin film transistor fabricating method comprises providing a substrate; forming an oxide semiconductor layer on an upper surface of the substrate; forming a gate insulating layer on an upper surface of the oxide semiconductor layer; masking a portion of the oxide semiconductor layer with the gate insulating layer; irradiating the oxide semiconductor layer with irradiating light having photon energy less than a band gap of the oxide semiconductor layer; forming a drain region and a source region at lateral portions of the oxide semiconductor layer exposed to the irradiating light, and forming a channel region in the portion of the oxide semiconductor layer masked by the gate insulating layer; and forming a gate electrode on an upper surface of the gate insulating layer. | 03-28-2013 |
20130105834 | WHITE LIGHT EMITTING DIODE DEVICE | 05-02-2013 |
20130168667 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a channel region formed on the gate insulating layer, a source region and a drain region formed at two opposite ends of the channel region, a first etching block layer made of silicon oxide and a second etching block layer made of silicon nitride which are formed in sequence on the channel region. The second etching block layer defines a groove in a center thereof to expose a part of the first etching block layer. The groove divides the second etching block layer into a first region and a second region. A source electrode extends from the source region to the first region. A drain electrode extends from the drain region to the second region. | 07-04-2013 |
20130200361 | THIN FILM TRANSISTOR HAVING AN ACTIVE LAYER CONSISTING OF MULTIPLE OXIDE SEMICONDUCTOR LAYERS - A thin film transistor includes a substrate, a gate electrode, and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region located at two lateral portions of the channel region. The active layer includes a first oxide semiconductor material layer and a second oxide semiconductor material layer stacked to each other. Material of the first oxide semiconductor material layer is different from material of the second oxide semiconductor material layer. A gate insulating layer is formed between the channel region and the gate electrode. A source electrode electrically connects the source region. A drain electrode electrically connects the drain region. | 08-08-2013 |
20130221360 | THIN FILM TRANSISTOR HAVING ATOMIC-DOPING LAYER - A thin film transistor includes a substrate, a source electrode and a drain electrode formed on the substrate, a channel layer formed between the source electrode and the drain electrode, an insulative layer covering the channel layer and a gate electrode formed on the insulative layer. An atomic-doping layer is formed in the channel layer. The atomic-doping layer is delta-doping with no more than one layer of atom. | 08-29-2013 |
20130256651 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region. | 10-03-2013 |
20140175426 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a gate electrode formed on the substrate and a gate insulating layer formed on the substrate and covering the gate electrode. A first ion capturing layer is formed on the gate insulating layer. A channel layer is formed on the ion capturing layer. And, a source electrode and a drain electrode are electrically connected with the channel layer. | 06-26-2014 |
20140175427 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate and a channel layer formed on an upper surface of the substrate. A source electrode and a drain electrode are formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer. A gate insulating layer is located in a middle portion of the upper surface of the channel layer. A gate electrode is located on an upper surface of the gate insulating layer. The thin film transistor further includes a first organic air block layer. The first organic air block layer is formed between the substrate and the channel layer. | 06-26-2014 |
20140248030 | RECORDING DEVICE AND METHOD FOR RECORDING PROGRAM - A recording device for recording a program is provided. The recording device has a local storing unit and communicates with a network storage device. The recording unit transmits the recorded program to the network storage device, to allow users access to the network storage device to watch or download the recorded program. When the recording device is disconnected from the network storage device, the recording device stores the recorded program in the local storing unit temporarily, and then transmits the record program in the local storing unit to the network storage device when the recording device reconnects with the network storage device, to avoid the loss of the recorded program. A method for recording a program is also provided. | 09-04-2014 |
20140291666 | FLIP-CHIP SOLID STATE LIGHT DISPLAY - An exemplary flip-chip solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors; the solid state lighting elements and the thin film transistors are located on the substrate, and the solid state lighting elements each are adjacent to one respective thin film transistor. The solid state lighting elements each are a light emitting diode, and are mounted on the substrate by a way of flip-chip. The thin film transistors each electrically connect with a corresponding solid state element by a source electrode or a drain electrode of each of the thin film transistors. | 10-02-2014 |
20140291688 | ACTIVE MATRIX SOLID STATE LIGHT DISPLAY - An exemplary active matrix solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors. A buffer layer is formed on the substrate. The solid state lighting elements are formed on the buffer layer, and the thin film transistors are formed on the substrate. The thin film transistor is located at a lateral side of the solid state lighting element. The solid state lighting element is a light emitting diode. The thin film transistor electrically connects with the solid state lighting element by a way of a source electrode or a drain electrode connecting with the solid state lighting element. | 10-02-2014 |
20140373065 | DEVICE AND METHOD FOR SWITCHING TELEVISION CHANNELS - A method for switching channels comprises obtaining program information of programs of each channel. The obtained program information is displayed for a user to select one or more programs. The selected programs are regarded as favorite programs and added to a favorite program list. The currently airing favorite programs are determined, and a switch list recording the currently airing favorite programs is created. The channels of the favorite programs in the switch list can be switched according to a switch command. | 12-18-2014 |
20140374698 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING SAME - A light emitting diode chip includes a substrate and a first conductive layer formed on the substrate. The first conductive layer includes a plurality of P-type AlInGaN layers and a plurality of graphenel layers alternately stacked on each other. A P-type AlInGaN layer, an active layer and an N-type AlInGaN layer are formed on the first conductive layer in sequence. A second conductive layer is formed on the N-type AlInGaN layer. A first electrode is electrically connected to the first conductive layer and a second electrode is electrically connected to the second conductive layer. | 12-25-2014 |
20140374742 | LIGHT EMITTING DISPLAY - An exemplary light emitting display includes a nitride light emitting diode formed on a first substrate and a thin film transistor formed on a second substrate. The first substrate and the second substrate are arranged face-to-face, and the first substrate is spaced from the second substrate. The nitride light emitting diode electrically connects with the thin film transistor. The thin film transistor comprises an active layer, and the active layer of the thin film transistor deviates from the light path of the nitride light emitting diode. | 12-25-2014 |
20150015831 | LIQUID CRYSTAL DISPLAY PANEL AND DEVICE - A liquid crystal display panel which is protected from external static electricity includes a first substrate, a second substrate, a liquid crystal layer, and a graphene film. The second substrate is opposite to the first substrate. The liquid crystal layer is sandwiched between the first substrate and the second substrate. The graphene film is disposed at a side of the first substrate away from the liquid crystal layer. | 01-15-2015 |