Patent application number | Description | Published |
20090004845 | Method for Making Semiconductor Structures Implementing Sacrificial Material - Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional. | 01-01-2009 |
20090010526 | TUNGSTEN PLUG DEPOSITION QUALITY EVALUATION METHOD BY EBACE TECHNOLOGY - A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures. | 01-08-2009 |
20090114837 | Dynamic pattern generator with cup-shaped structure - One embodiment relates to a dynamic pattern generator for reflection electron beam lithography which includes conductive pixel pads, an insulative border surrounding each conductive pixel pad so as to electrically isolate the conductive pixel pads from each other, and conductive elements coupled to the conductive pixel pads for controllably applying voltages to the conductive pixel pads. The conductive pixel pads are advantageously cup shaped with a bottom portion, a sidewall portion, and an open cavity. Another embodiment relates to a pattern generating apparatus which includes a well structure with sidewalls and a cavity configured above each conductive pixel pad. The sidewalls may include alternating layers of conductive and insulative materials. Other embodiments, aspects and feature are also disclosed. | 05-07-2009 |
20090310643 | Methods and Apparatus for Thin Metal Film Thickness Measurement - A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided. | 12-17-2009 |
20100079147 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 04-01-2010 |
20110133750 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 06-09-2011 |
20130056038 | Wet Surface Treatment By Usage of a Liquid Bath Containing Energy Limited Bubbles - A method controllably and sustainably creates an upwardly directed gradient of dropping temperatures in a wet treatment tank between a cooled and face down workpiece (e.g., an in-process semiconductor wafer) and a lower down heat source. A thermal fluid upwell containing thermally collapsible bubbles is then directed from the heat source to the face down workpiece. In one class of embodiments, bubble collapse energy release and/or bubble collapse locations are controlled so as to avoid exposing delicate features of the to-be-treated surface to damaging forces. In one class of embodiments the wet treatment includes ultra-cleaning of the work face. Cleaning fluids that are essentially free of predefined contaminates are upwelled to the to-be-cleaned surface and potentially contaminated after-flows are convectively directed away from the workpiece so as to prevent recontamination of the workpiece. | 03-07-2013 |